T4-LDS-0317, Rev. 1 (9/13/13) ©2013 Microsemi Corporation Page 1 of 7
2N6648 – 2N6650
Available on
commercial
versions
PNP D arlington Powe r Silicon Transistor
Qualified per MIL-PRF-19500/527
Quali f i ed Levels:
JAN , JANTX, and
JANTXV
DESCRIPTION
This high speed PNP transistor is rat ed at -10 amps and is military q uali fi ed up to the JANTXV
level. This TO-204AA isolat ed pack age features a 1 80 degree lead orientation.
TO-204AA (TO-3)
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6648 through 2N6650
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/527
• RoHS compliant versions available (commercial grade only)
APPLICATIONS / BE NEFITS
• Military and ot her high re liability applications
• High frequency response
• TO-204AA case with i solated terminals
MAXIMUM RATINGS @ TA = +2 5 oC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-Case
RӨJC
1.76
oC/W
Collector-Emitter Voltage 2N6648
2N6649
2N6650
VCEO -40
-60
-80
V
Collector-Bas e Voltage 2N6648
2N6649
2N6650
VCBO -40
-60
-80
V
Emitter-Base Voltage
VEBO
-5
V
Total Power Dissipation @ TA = +25
o
C
(1)
@ TC = +25
o
C
(2)
PT 5.0
85
W
Base Current
IB
-0.25
A
Collector Current
IC
-10
A
Notes: 1. De rat e li ne ar ly 33.3 mW/oC above TA > +25 oC.
2. De rate li ne ar ly 567 mW/oC above TC > +25 oC.
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2N6648 – 2N6650
M ECHANICAL and PACKAGI NG
• CASE: Industry standard TO-204AA (TO-3), hermetically sealed, 0.040 inch diameter pins
• FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating. Solderable per MIL-STD-750
method 2026.
• POLARITY: PNP (see schematic)
• MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screw s
• WEIGHT: Approximately 15 grams
• See package dimensions on last page.
PART NOMENCLAT U RE
JAN 2N6648 (e3)
JAN = J AN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commerc ial
JEDEC type number
(see Electrical Characteristics
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Com pliant
SYMBOLS & DEFINIT IONS
Symbol
Definition
IB
Base cur rent: The value of the dc current into the base terminal .
IC
Collector current: The value of the dc current into the collector terminal.
IE
Emitter current: The value of the dc current into the emitter terminal.
TC
Case temperature: The temperature measured at a specified location on the case of a device.
VCB
Collector-base voltage: The dc voltage between the collector and the base.
VCBO
Collector-base voltage, base open: The voltage between the collector and base ter minals when the emitter ter minal is
open-circuited.
VCC
Collector-supply voltage: The suppl y vol tage applied to a circuit c onnected to the collector.
VCEO
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
VCE
Collector-emitter voltage: The dc voltage between the collector and the emitter.
VEB
Emitter-base voltage: The dc voltage between the emitter and the base.
VEBO Emitter-base vol tage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
T4-LDS-0317, Rev. 1 (9/13/13) ©2013 Microsemi Corporation Page 3 of 7
2N6648 – 2N6650
ELECTRICAL CHARACTE RISTI CS @ TA = +25 oC unless otherwise noted
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emit ter Breakdown Voltage
IC = -20 0 m A 2N6648
2N6649
2N6650 V(BR)CEO -40
-60
-80 V
Collector-Emit ter Breakdown Voltage
IC = -200 mA, RBB = 100 Ω 2N6648
2N6649
2N6650 V(BR)CER -40
-60
-80 V
Collector-Emit ter Cut off Current
VCE = -40 V
VCE = -60 V
VCE = -80 V
2N6648
2N6649
2N6650
ICEO
-1.0
mA
Collector-Emit ter Cut off Current
VCE = -40 V, VBE = 1.5 V
VCE = -60 V, VBE = 1.5 V
VCE = -80 V, VBE = 1.5 V
2N6648
2N6649
2N6650
ICEX
10
µA
Emitter-Base C utoff Current
VEB = 5.0 V
IEBO
-10 mA
Collector-Emit ter Cut off Current
VCE = -40 V
VCE = -60 V
VCE = -80 V
2N6648
2N6649
2N6650
ICBO
-1.0
mA
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = -1.0 A, VCE = -3.0 V
IC = -5 A, VCE = -3.0 V
IC = -10 A, VCE = -3.0 V
IC = -5 A, VCE = -3.0 V, TA = -65 ºC
hFE
300
1,000
100
200
20,000
Collector-Emitter Saturation Voltage
IC = -5.0 A, IB = -10 mA
IC = -10 A, IB = -0.1 mA
VCE(sat)
-2.0
-3.0
V
Base-Emi tt er Voltag e Non-saturated
VCE = -3 .0 V, IC = -5.0 A
VCE = -3 .0 V, IC = -10 A
VBE(on) -2.8
-4.5 V
DYNAMIC CHARACTERISTICS
Magn itude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= -1.0 A, V
CE
= -5.0 V, f = 1.0 MHz
|h
fe
|
30
400
Output Capacitance
V
CB
= -10 V, I
E
= 0, 100 kHz ≤ f ≤ 1 MHz
C
obo
300
pF
T4-LDS-0317, Rev. 1 (9/13/13) ©2013 Microsemi Corporation Page 4 of 7
2N6648 – 2N6650
ELECTRICAL CHARACTE RISTI CS @ TC = 25 oC unless other wis e noted. (c ontinued)
SWITCHING CHARACTERISTICS
Turn-On Ti me
VCC = -30 V, IC = -5.0 A; IB= -20 mA
ton
2.5
µs
Turn-Off Time
VCC = -30 V, IC = -5.0 A; IB1= IB2 = -20 mA
toff
10
µs
SAFE OPERATING AREA (See Figures 1 and 2 and MIL-STD-750, Test Method 3053)
DC Te sts
TC = +2 5 °C, t = 1 s econd , 1 Cycle
Test 1
VCE = -8.5 V, IC = -10 A
Test 2
VCE = -25 V, IC = -3.4 A
Test 3
VCE = -40 V, IC = -0.9 A (2N6648)
VCE = -60 V, IC = -0.3 A (2N6649)
VCE = -80 V, IC = -0.14 A ( 2N6 650)
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2N6648 – 2N6650
SAFE OPERATING AREA
VCE – C ollector t o Emitter Voltage (Volt s)
FIGURE 1
Max i mum Safe Operating Graph (continuous dc)
L – Inductance (M i llihen r ies)
FIGURE 2
Safe Operating Area for Switching Between Saturation an d Cutoff (unclamped inductive load)
IC = Collector Current (Amperes)
IC = Collector Current (Amperes)
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2N6648 – 2N6650
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. These dimensions should be measured at points 0.050 inch (1.27 m m) and 0.055 inch (1.40 mm) belo w seating plane.
When gauge is not used measurement will be made at the seating plane.
4. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside
a 0.930 inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to
0.006 inch (0.15 mm) convex overall.
5. Mounting holes shall be deburred on the seating plane side.
6. Collector is electrically connected to the case.
7. I n accordance with AMSE Y14.5M, diameters are equivalent to Φx symbology.
See schematic on next page
Dimensions
Ltr
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
-
0.875
-
22.23
CH
0.250
0.450
6.35
11.43
HR
0.495
0.525
12.57
13.34
HR1
0.131
0.188
3.33
4.78
HT
0.050
0.135
1.52
3.43
LD
0.038
0.043
0.97
1.09
LL
0.312
0.500
7.92
12.70
LL1
-
0.050
-
1.27
MHD
0.151
0.161
3.84
4.09
MHS
1.177
1.197
29.90
30.40
PS
0.420
0.440
10.67
11.18
3
PS1
0.205
0.225
5.21
5.72
3
S1
0.655
0.675
16.64
17.15
T4-LDS-0317, Rev. 1 (9/13/13) ©2013 Microsemi Corporation Page 7 of 7
2N6648 – 2N6650
SCHEMATIC