15GN03MA Ordering number : ENA1108 SANYO Semiconductors DATA SHEET 15GN03MA NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications Applications * VHF, RF, MIXER, OSC, IF amplifier. Features * * * High cut-off frequency : fT=1.5GHz typ. High gain : S21e2=13dB typ (f=0.4GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO 20 V 10 V VEBO IC 3 V 70 mA Junction Temperature PC Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm20.8mm) 400 mW 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ ICBO IEBO VCB=10V, IE=0A Emitter Cutoff Current DC Current Gain hFE VCE=5V, IC=10mA 100 Gain-Bandwidth Product fT VCE=5V, IC=20mA 1.0 VEB=2V, IC=0A Marking : ZC Unit max 0.1 A 1 A 180 1.5 GHz Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2908AB MS IM TC-00001669 No. A1108-1/6 15GN03MA Continued from preceding page. Parameter Symbol Ratings Conditions min Output Capacitance Cob Reverse Transfer Capacitance Cre VCB=10V, f=1MHz VCB=10V, f=1MHz Forward Transfer Gain 2 S21e NF VCE=5V, IC=20mA, f=0.4GHz VCE=3V, IC=2mA, f=0.4GHz Noise Figure typ Unit max 0.95 1.25 pF 0.65 10 pF 13 dB 1.6 dB Package Dimensions 0.15 0.2 0.3 3 0 to 0.1 1.25 0.425 2.1 0.425 unit : mm (typ) 7023-009 1 2 0.65 0.65 0.3 0.6 0.9 2.0 1 : Base 2 : Emitter 3 : Collector SANYO : MCP IC -- VCE 100 VCE=5V 0.8mA 0.7mA 0.6mA 80 70 70 Collector Current, IC -- mA 90 Collector Current, IC -- mA IC -- VBE 80 0.5mA 60 0.4mA 50 0.3mA 40 30 0.2mA 20 0.1mA 60 50 40 30 20 10 10 IB=0mA 0 0 2 4 6 8 0 0 10 Collector-to-Emitter Voltage, VCE -- V 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V hFE -- IC 3 0.2 IT08096 f T -- IC 3 VCE=5V Gain-Bandwidth Product, f T -- GHz DC Current Gain, hFE VCE=5V 2 100 7 5 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 IT08098 1.2 IT08097 2 1.0 7 5 3 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 IT08099 No. A1108-2/6 15GN03MA Cob -- VCB 3 Reverse Transfer Capacitance, Cre -- pF Output Capacitance, Cob -- pF f=1MHz 2 1.0 7 5 0.1 2 3 5 7 2 1.0 3 5 7 Forward Transfer Gain, S21e -- dB Noise Figure, NF -- dB 2 7 5 0 =5 ZS pt so =Z ZS 2 1.0 5 7 1.0 2 3 5 7 2 10 Collector Current, IC -- mA 7 2 5 IT08103 3 5 7 2 1.0 3 5 7 10 Collector-to-Base Voltage, VCB -- V S21e 2 -- I C 10 2 2 IT08101 VCE=5V f=400MHz 12 10 8 6 4 1.0 2 3 5 7 3 Collector Current, IC -- mA 5 7 100 IT08102 When mounted on ceramic substrate (250mm20.8mm) 400 Collector Dissipation, PC -- mW 3 PC -- Ta 450 1.0 14 VCE=3V f=400MHz 3 2 IT08100 NF -- IC 3 f=1MHz 5 0.1 2 10 Collector-to-Base Voltage, VCB -- V 10 Cre -- VCB 3 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT08104 No. A1108-3/6 15GN03MA S Parameters (Common emitter) VCE=5V, IC=1mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.927 --39.48 3.051 153.95 0.045 66.57 0.938 --5.28 200 0.877 --72.13 2.643 134.85 0.072 53.42 0.879 --10.12 300 0.831 --97.09 2.258 118.70 0.090 41.89 0.834 --15.17 400 0.796 --115.43 1.925 105.65 0.093 33.66 0.806 --20.70 500 0.772 --128.51 1.645 95.12 0.090 29.42 0.796 --25.57 600 0.759 --139.76 1.420 86.92 0.085 28.20 0.796 --28.96 700 0.754 --148.33 1.255 80.31 0.080 30.19 0.792 --31.48 800 0.750 --155.54 1.132 74.68 0.072 36.45 0.790 --34.42 900 0.746 --162.07 1.033 69.44 0.067 44.81 0.793 --37.89 1000 0.743 --167.59 0.948 65.05 0.065 55.74 0.796 --41.83 S11 S21 S21 S12 S12 S22 S22 --14.15 VCE=5V, IC=3mA, ZO=50 Freq(MHz) S11 100 0.819 --66.73 7.544 137.99 0.036 55.23 0.862 200 0.733 --107.53 5.274 115.44 0.050 43.07 0.730 --17.07 300 0.698 --130.44 3.901 102.51 0.055 40.37 0.691 --20.60 400 0.682 --144.75 3.111 93.53 0.056 41.56 0.673 --22.18 500 0.674 --154.20 2.563 85.87 0.056 46.54 0.680 --25.14 600 0.669 --161.91 2.175 79.64 0.057 53.71 0.686 --28.23 700 0.669 --167.44 1.884 74.61 0.061 62.91 0.686 --30.58 800 0.671 --172.33 1.680 70.09 0.067 70.67 0.690 --33.35 900 0.672 --176.77 1.520 65.76 0.075 78.25 0.695 --36.65 1000 0.672 179.40 1.386 61.98 0.086 83.86 0.700 --40.53 VCE=5V, IC=5mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.745 --85.56 10.487 129.32 0.031 52.32 0.808 --17.13 200 0.673 --125.68 6.596 107.46 0.041 43.79 0.695 --19.72 300 0.650 --144.45 4.641 95.99 0.044 45.46 0.655 --20.94 400 0.643 --155.93 3.583 88.14 0.046 51.02 0.641 --22.34 500 0.641 --163.08 2.926 81.98 0.051 57.47 0.638 --24.48 600 0.641 --169.17 2.468 76.86 0.055 65.57 0.640 --27.05 700 0.642 --173.85 2.139 72.14 0.064 72.10 0.640 --29.96 800 0.645 --177.59 1.898 68.01 0.072 78.01 0.643 --32.86 900 0.648 179.02 1.708 64.03 0.082 84.74 0.654 --36.05 1000 0.649 175.69 1.565 60.67 0.096 88.35 0.663 --39.64 VCE=5V, IC=10mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.648 --111.11 13.755 118.07 0.025 49.17 0.710 --18.60 200 0.617 --144.00 7.787 99.84 0.031 50.50 0.618 --18.94 300 0.610 --157.84 5.322 90.62 0.035 55.71 0.593 --19.18 400 0.611 --165.84 4.071 84.05 0.042 63.53 0.585 --20.81 500 0.612 --171.10 3.295 78.75 0.049 72.26 0.585 --23.14 600 0.616 --175.51 2.770 74.15 0.059 76.93 0.591 --25.68 700 0.620 --179.00 2.401 69.78 0.068 81.33 0.595 --28.62 800 0.622 178.16 2.122 65.84 0.080 85.49 0.598 --31.66 900 0.629 175.42 1.906 62.06 0.091 88.11 0.610 --34.80 1000 0.632 172.79 1.741 58.71 0.104 90.16 0.619 --38.30 No. A1108-4/6 15GN03MA S Parameters (Common emitter) VCE=5V, IC=15mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.608 --124.26 15.141 112.79 0.021 49.66 0.661 --18.68 200 0.596 --152.05 8.271 96.59 0.028 56.25 0.584 --17.69 300 0.594 --163.33 5.613 88.34 0.034 63.87 0.566 --18.43 400 0.600 --169.82 4.267 82.26 0.042 71.61 0.561 --19.87 500 0.601 --173.91 3.457 77.23 0.052 77.39 0.564 --22.13 600 0.606 --177.77 2.902 72.65 0.061 81.90 0.570 --24.90 700 0.613 179.41 2.501 68.50 0.071 84.02 0.573 --27.96 800 0.617 176.72 2.210 64.59 0.083 86.75 0.579 --30.98 900 0.624 174.31 1.988 60.86 0.094 88.46 0.592 --34.26 1000 0.628 171.96 1.808 57.39 0.108 90.57 0.599 --37.51 S11 S21 S21 S12 S12 S22 S22 VCE=5V, IC=20mA, ZO=50 Freq(MHz) S11 100 0.587 --132.33 15.887 109.73 0.018 50.98 0.630 --18.23 200 0.589 --156.83 8.517 94.77 0.026 60.57 0.563 --17.10 300 0.590 --166.31 5.751 86.97 0.034 66.88 0.549 --17.73 400 0.593 --171.88 4.373 80.95 0.043 73.76 0.547 --19.30 500 0.598 --175.61 3.529 76.08 0.052 79.21 0.552 --21.55 600 0.604 --178.89 2.958 71.70 0.063 82.86 0.558 --24.41 700 0.611 178.36 2.550 67.43 0.073 85.71 0.560 --27.19 800 0.616 176.07 2.257 63.56 0.085 87.76 0.569 --30.31 900 0.624 173.75 2.026 59.99 0.097 89.02 0.581 --33.63 1000 0.628 171.39 1.838 56.47 0.109 90.88 0.590 --36.92 VCE=5V, IC=30mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.574 --141.90 16.518 106.28 0.017 56.75 0.594 --17.60 200 0.584 --161.69 8.702 92.68 0.024 65.21 0.541 --16.13 300 0.587 --169.42 5.851 85.19 0.033 71.56 0.531 --16.69 400 0.596 --174.12 4.433 79.42 0.042 77.01 0.532 --18.41 500 0.599 --177.29 3.570 74.54 0.053 82.34 0.536 --20.78 600 0.609 179.93 2.987 70.07 0.063 84.47 0.545 --23.60 700 0.616 177.48 2.574 65.88 0.073 86.83 0.550 --26.54 800 0.621 175.27 2.268 61.99 0.085 88.18 0.559 --29.78 900 0.631 173.12 2.033 58.20 0.096 90.72 0.571 --33.08 1000 0.638 170.96 1.845 54.81 0.111 91.80 0.582 --36.46 VCE=5V, IC=50mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.578 --151.54 16.222 102.78 0.015 58.15 0.564 --16.24 200 0.596 --166.79 8.428 90.13 0.023 71.59 0.524 --14.78 300 0.603 --172.63 5.641 82.89 0.033 76.27 0.520 --15.94 --17.71 400 0.611 --176.28 4.254 77.21 0.043 79.95 0.521 500 0.618 --178.98 3.421 72.11 0.052 83.78 0.530 --20.31 600 0.629 178.44 2.851 67.60 0.064 86.83 0.538 --23.39 700 0.639 176.23 2.452 63.15 0.074 88.24 0.546 --26.40 800 0.647 174.01 2.155 59.33 0.087 89.54 0.555 --29.74 900 0.657 171.87 1.921 55.44 0.099 92.59 0.568 --33.37 1000 0.664 169.65 1.740 51.95 0.113 94.10 0.581 --36.94 No. A1108-5/6 15GN03MA SANYO Semiconductor 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A1108-6/6