15GN03MA
No. A1108-1/6
Applications
VHF, RF, MIXER, OSC, IF amplifier.
Features
High cut-off frequency: fT=1.5GHz typ.
High gain : S21e2=13dB typ (f=0.4GHz).
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 20 V
Collector-to-Emitter Voltage VCEO 10 V
Emitter-to-Base Voltage VEBO 3V
Collector Current IC70 mA
Collector Dissipation PC
When mounted on ceramic substrate (250mm
2
0.8mm)
400 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=10V, IE=0A 0.1 μA
Emitter Cutoff Current IEBO VEB=2V, IC=0A 1 μA
DC Current Gain hFE VCE=5V, IC=10mA 100 180
Gain-Bandwidth Product fTVCE=5V, IC=20mA 1.0 1.5 GHz
Marking : ZC Continued on next page.
SANYO Semiconductors
DATA SHEET
www.semiconductor-sanyo.com/network
Ordering number : ENA1108
O2908AB MS IM TC-00001669
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
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customer shall be solely responsible for the use.
15GN03MA
NPN Epitaxial Planar Silicon Transistor
VHF High-frequency Amplifier Applications
15GN03MA
No. A1108-2/6
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Output Capacitance Cob VCB=10V, f=1MHz 0.95 1.25 pF
Reverse T ransfer Capacitance Cre VCB=10V, f=1MHz 0.65 pF
Forward T ransfer Gain S21e2VCE=5V, IC=20mA, f=0.4GHz 10 13 dB
Noise Figure NF VCE=3V, IC=2mA, f=0.4GHz 1.6 dB
Package Dimensions
unit : mm (typ)
7023-009
0.65 0.65
2.0 0.9 0.6
0.3
12
3
2.1
1.25 0.425
0.425
0.2
0.3 0.15
0 to 0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
0246810
0
10
20
30
40
50
60
70
80
90
100
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VCE
IT08096
IB=0mA
0 0.2 0.4 0.6 0.8 1.0 1.2
0
10
20
30
40
50
80
70
60
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
IT08097
IC -- VBE
5
7
100
2
3
5
7
1.0
2
3
3
hFE -- IC
1.0 23 57
10 23 57
100 1.0 23 57
10 23 57
100
Collector Current, IC -- mA
DC Current Gain, hFE
IT08098
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
VCE=5V
fT -- IC
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- GHz
IT08099
VCE=5V
VCE=5V
15GN03MA
No. A1108-3/6
0 20 40 60 80 100 120 140 160
0
50
100
150
200
250
300
350
400
450
IT08104
Collector Dissipation, PC -- mW
PC -- Ta
1.0 23 57 23 57
10 100
S21e
2
-- IC
Collector Current, IC -- mA
Ambient Temperature, Ta -- °C
Forward T ransfer Gain,
S21e
2
-- dB
IT08102
Collector Current, IC -- mA
Noise Figure, NF -- dB
IT08103
NF -- IC
5
7
2
3
1.0
5
7
2
3
1.0
Collector-to-Base Voltage, VCB -- V
Reverse Transfer Capacitance, Cre -- pF
IT08101
Cre -- VCB
0.1 2235 57237
1.0 10 0.1 2235 57237
1.0 10
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
IT08100
f=1MHz f=1MHz
4
6
8
10
12
14
1.0 10
357 235 5723
2
3
5
7
10
1.0
ZS=50Ω
ZS=Zsopt
VCE=5V
f=400MHz
VCE=3V
f=400MHz
When mounted on ceramic substrate
(250mm
2
0.8mm)
15GN03MA
No. A1108-4/6
S Parameters (Common emitter)
VCE=5V, IC=1mA, ZO=50Ω
Freq(MHz) S11S11 S21S21 S12S12 S22S22
100 0.927 --39.48 3.051 153.95 0.045 66.57 0.938 --5.28
200 0.877 --72.13 2.643 134.85 0.072 53.42 0.879 --10.12
300 0.831 --97.09 2.258 118.70 0.090 41.89 0.834 --15.17
400 0.796 --115.43 1.925 105.65 0.093 33.66 0.806 --20.70
500 0.772 --128.51 1.645 95.12 0.090 29.42 0.796 --25.57
600 0.759 --139.76 1.420 86.92 0.085 28.20 0.796 --28.96
700 0.754 --148.33 1.255 80.31 0.080 30.19 0.792 --31.48
800 0.750 --155.54 1.132 74.68 0.072 36.45 0.790 --34.42
900 0.746 --162.07 1.033 69.44 0.067 44.81 0.793 --37.89
1000 0.743 --167.59 0.948 65.05 0.065 55.74 0.796 --41.83
VCE=5V, IC=3mA, ZO=50Ω
Freq(MHz) S11S11 S21S21 S12S12 S22S22
100 0.819 --66.73 7.544 137.99 0.036 55.23 0.862 --14.15
200 0.733 --107.53 5.274 115.44 0.050 43.07 0.730 --17.07
300 0.698 --130.44 3.901 102.51 0.055 40.37 0.691 --20.60
400 0.682 --144.75 3.111 93.53 0.056 41.56 0.673 --22.18
500 0.674 --154.20 2.563 85.87 0.056 46.54 0.680 --25.14
600 0.669 --161.91 2.175 79.64 0.057 53.71 0.686 --28.23
700 0.669 --167.44 1.884 74.61 0.061 62.91 0.686 --30.58
800 0.671 --172.33 1.680 70.09 0.067 70.67 0.690 --33.35
900 0.672 --176.77 1.520 65.76 0.075 78.25 0.695 --36.65
1000 0.672 179.40 1.386 61.98 0.086 83.86 0.700 --40.53
VCE=5V, IC=5mA, ZO=50Ω
Freq(MHz) S11S11 S21S21 S12S12 S22S22
100 0.745 --85.56 10.487 129.32 0.031 52.32 0.808 --17.13
200 0.673 --125.68 6.596 107.46 0.041 43.79 0.695 --19.72
300 0.650 --144.45 4.641 95.99 0.044 45.46 0.655 --20.94
400 0.643 --155.93 3.583 88.14 0.046 51.02 0.641 --22.34
500 0.641 --163.08 2.926 81.98 0.051 57.47 0.638 --24.48
600 0.641 --169.17 2.468 76.86 0.055 65.57 0.640 --27.05
700 0.642 --173.85 2.139 72.14 0.064 72.10 0.640 --29.96
800 0.645 --177.59 1.898 68.01 0.072 78.01 0.643 --32.86
900 0.648 179.02 1.708 64.03 0.082 84.74 0.654 --36.05
1000 0.649 175.69 1.565 60.67 0.096 88.35 0.663 --39.64
VCE=5V, IC=10mA, ZO=50Ω
Freq(MHz) S11S11 S21S21 S12S12 S22S22
100 0.648 --111.11 13.755 118.07 0.025 49.17 0.710 --18.60
200 0.617 --144.00 7.787 99.84 0.031 50.50 0.618 --18.94
300 0.610 --157.84 5.322 90.62 0.035 55.71 0.593 --19.18
400 0.611 --165.84 4.071 84.05 0.042 63.53 0.585 --20.81
500 0.612 --171.10 3.295 78.75 0.049 72.26 0.585 --23.14
600 0.616 --175.51 2.770 74.15 0.059 76.93 0.591 --25.68
700 0.620 --179.00 2.401 69.78 0.068 81.33 0.595 --28.62
800 0.622 178.16 2.122 65.84 0.080 85.49 0.598 --31.66
900 0.629 175.42 1.906 62.06 0.091 88.11 0.610 --34.80
1000 0.632 172.79 1.741 58.71 0.104 90.16 0.619 --38.30
15GN03MA
No. A1108-5/6
S Parameters (Common emitter)
VCE=5V, IC=15mA, ZO=50Ω
Freq(MHz) S11S11 S21S21 S12S12 S22S22
100 0.608 --124.26 15.141 112.79 0.021 49.66 0.661 --18.68
200 0.596 --152.05 8.271 96.59 0.028 56.25 0.584 --17.69
300 0.594 --163.33 5.613 88.34 0.034 63.87 0.566 --18.43
400 0.600 --169.82 4.267 82.26 0.042 71.61 0.561 --19.87
500 0.601 --173.91 3.457 77.23 0.052 77.39 0.564 --22.13
600 0.606 --177.77 2.902 72.65 0.061 81.90 0.570 --24.90
700 0.613 179.41 2.501 68.50 0.071 84.02 0.573 --27.96
800 0.617 176.72 2.210 64.59 0.083 86.75 0.579 --30.98
900 0.624 174.31 1.988 60.86 0.094 88.46 0.592 --34.26
1000 0.628 171.96 1.808 57.39 0.108 90.57 0.599 --37.51
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz) S11S11 S21S21 S12S12 S22S22
100 0.587 --132.33 15.887 109.73 0.018 50.98 0.630 --18.23
200 0.589 --156.83 8.517 94.77 0.026 60.57 0.563 --17.10
300 0.590 --166.31 5.751 86.97 0.034 66.88 0.549 --17.73
400 0.593 --171.88 4.373 80.95 0.043 73.76 0.547 --19.30
500 0.598 --175.61 3.529 76.08 0.052 79.21 0.552 --21.55
600 0.604 --178.89 2.958 71.70 0.063 82.86 0.558 --24.41
700 0.611 178.36 2.550 67.43 0.073 85.71 0.560 --27.19
800 0.616 176.07 2.257 63.56 0.085 87.76 0.569 --30.31
900 0.624 173.75 2.026 59.99 0.097 89.02 0.581 --33.63
1000 0.628 171.39 1.838 56.47 0.109 90.88 0.590 --36.92
VCE=5V, IC=30mA, ZO=50Ω
Freq(MHz) S11S11 S21S21 S12S12 S22S22
100 0.574 --141.90 16.518 106.28 0.017 56.75 0.594 --17.60
200 0.584 --161.69 8.702 92.68 0.024 65.21 0.541 --16.13
300 0.587 --169.42 5.851 85.19 0.033 71.56 0.531 --16.69
400 0.596 --174.12 4.433 79.42 0.042 77.01 0.532 --18.41
500 0.599 --177.29 3.570 74.54 0.053 82.34 0.536 --20.78
600 0.609 179.93 2.987 70.07 0.063 84.47 0.545 --23.60
700 0.616 177.48 2.574 65.88 0.073 86.83 0.550 --26.54
800 0.621 175.27 2.268 61.99 0.085 88.18 0.559 --29.78
900 0.631 173.12 2.033 58.20 0.096 90.72 0.571 --33.08
1000 0.638 170.96 1.845 54.81 0.111 91.80 0.582 --36.46
VCE=5V, IC=50mA, ZO=50Ω
Freq(MHz) S11S11 S21S21 S12S12 S22S22
100 0.578 --151.54 16.222 102.78 0.015 58.15 0.564 --16.24
200 0.596 --166.79 8.428 90.13 0.023 71.59 0.524 --14.78
300 0.603 --172.63 5.641 82.89 0.033 76.27 0.520 --15.94
400 0.611 --176.28 4.254 77.21 0.043 79.95 0.521 --17.71
500 0.618 --178.98 3.421 72.11 0.052 83.78 0.530 --20.31
600 0.629 178.44 2.851 67.60 0.064 86.83 0.538 --23.39
700 0.639 176.23 2.452 63.15 0.074 88.24 0.546 --26.40
800 0.647 174.01 2.155 59.33 0.087 89.54 0.555 --29.74
900 0.657 171.87 1.921 55.44 0.099 92.59 0.568 --33.37
1000 0.664 169.65 1.740 51.95 0.113 94.10 0.581 --36.94
15GN03MA
No. A1108-6/6
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ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
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PS
This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.