DATA SHEET PHOTOCOUPLER PS2535-1,PS2535L-1 HIGH COLLECTOR TO EMITTER VOLTAGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES -NEPOC Series- DESCRIPTION The PS2535-1 and PS2535L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. A high withstanding voltage between the I/O, the high voltage between the collector and emitter of the transistor, and darlington transistor output enables low-current input. The PS2535-1 is in a plastic DIP (Dual In-line Package) and the PS2535L-1 is lead bending type (Gull-wing) for surface mount. FEATURES * High collector to emitter voltage (VCEO = 350 V) * High isolation voltage (BV = 5 000 Vr.m.s.) * High current transfer ratio (CTR = 1 500 % TYP.) * Ordering number of taping product: PS2535L-1-E3, E4, F3, F4 APPLICATIONS * Telephone, Exchange equipment * FAX/MODEM The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. PN10447EJ01V0DS (1st edition) (Previous No. P14066EJ2V0DS00) Date Published November 2003 CP(K) Printed in Japan The mark shows major revised points. NEC Compound Semiconductor Devices 1999, 2003 PS2535-1,PS2535L-1 PACKAGE DIMENSIONS (Unit : mm) DIP Type (New package) PS2535-1 3 0 to 15 +0.1 0.25 -0.05 1.250.15 0.500.10 0.25 M 2 0.1 +0.1 -0.05 0.90.25 9.600.4 2.54 0.15 Lead Bending Type 3 0 to 15 +0.1 0.25 -0.05 1.250.15 0.500.10 0.25 M 2.54 4 3 6.50.5 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 0.25 +0.1 -0.05 3.50.3 2 7.62 TOP VIEW 4.60.5 3.50.3 6.50.5 1. Anode 2. Cathode 3. Emitter 4. Collector 1 PS2535L-1 TOP VIEW 4 0.1 +0.1 -0.05 PS2535-1 4.60.5 3.30.5 4.150.4 1 0.25 M DIP Type 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1.250.15 2.54 2 4 0.25 +0.1 -0.05 2 7.62 TOP VIEW 4.60.35 6.50.5 6.50.5 1. Anode 2. Cathode 3. Emitter 4. Collector 3.50.3 3.20.4 4.150.4 4 1 PS2535L-1 TOP VIEW 3.50.3 4.60.35 Lead Bending Type (New package) 0.90.25 9.600.4 1.250.15 0.25 M 2.54 Data Sheet PN10447EJ01V0DS 0.15 PS2535-1,PS2535L-1 MARKING EXAMPLE PS2535-1 No. 1 pin Mark 2535 M 301 M Assembly Lot 3 01 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Package Standard PKG New PKG Made in Japan Made in Taiwan Blank F E Data Sheet PN10447EJ01V0DS 3 PS2535-1,PS2535L-1 ORDERING INFORMATION Part Number Package PS2535-1 Packing Style 4-pin DIP Magazine case 100 pcs *1 Application Part Number PS2535-1 PS2535L-1 PS2535L-1-E3 Embossed Tape 1 000 pcs/reel PS2535L-1-E4 PS2535L-1-F3 Embossed Tape 2 000 pcs/reel PS2535L-1-F4 *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V PD/C 0.7 mW/C PD 70 mW IFP 0.5 A Collector to Emitter Voltage VCEO 350 V Emitter to Collector Voltage VECO 0.3 V IC 120 mA PC/C 2.0 mW/C PC 200 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA -55 to +100 C Storage Temperature Tstg -55 to +150 C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 s, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output 4 Data Sheet PN10447EJ01V0DS PS2535-1,PS2535L-1 ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz MIN. TYP. MAX. Unit 1.2 1.4 V 5 A 15 pF Transistor Collector to Emitter Dark Current ICEO VCE = 350 V, IF = 0 mA Coupled Current Transfer Ratio *1 (IC/IF) CTR IF = 1 mA, VCE = 2 V Collector Saturation Voltage VCE (sat) IF = 1 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.6 pF *2 tr VCC = 5 V, IC = 10 mA, RL = 100 18 s Rise Time Fall Time *2 tf 400 10 1 500 400 nA 5 500 % 1.0 V 11 5 *1 CTR rank N : 400 to 5 500 (%) L : 1 500 to 5 500 (%) *2 Test circuit for switching time Pulse input VCC IF PW = 1 ms, Duty cycle = 1/10 In monitor VOUT 50 RL = 100 Data Sheet PN10447EJ01V0DS 5 PS2535-1,PS2535L-1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 60 0.7 mW/C 40 20 0 25 100 75 50 240 220 200 180 160 140 2.0 mW/C 120 100 80 60 40 20 25 0 100 75 50 100 Ambient Temperature TA (C) Ambient Temperature TA (C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 100 TA = +100 C +60 C +25 C 50 Forward Current IF (mA) Transistor Power Dissipation PC (mW) 80 Collector Current IC (mA) Diode Power Dissipation PD (mW) 100 10 5 0 C -25 C -50 C 1 0.5 5 mA 3 mA 2 mA 50 1 mA 10 5 IF = 0.5 mA 0.1 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1 0.4 1.5 0.8 1.0 1.2 1.4 1.6 Collector Saturation Voltage VCE(sat) (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 100 000 VCEO = 350 V 10 000 CTR = 1 068 % 2 290 % 4 360 % 1 000 100 10 1 -50 -25 3 mA 5 mA 0 25 50 75 100 2 mA 50 1 mA 10 5 IF = 0.5 mA 1 0 1 2 3 4 Collector to Emitter Voltage VCE (V) Ambient Temperature TA (C) Remark The graphs indicate nominal characteristics. 6 0.6 Forward Voltage VF (V) Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 0.7 Data Sheet PN10447EJ01V0DS 5 ; ; CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.4 4 500 Normalized to 1.0 at TA = 25 C, IF = 1 mA, VCE = 2 V 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 75 50 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERTURE PS2535-1,PS2535L-1 VCE = 2 V 4 000 3 500 3 000 2 500 2 000 1 500 1 000 500 0 0.1 100 0.5 10 40 LONG TERM CTR DEGRADATION 1 000 1.2 VCC = 10 V, IC = 10 mA, CTR = 1 800 % IF = 1 mA 100 tf td 10 ts 1 TA = 25 C 1.0 tr CTR (Relative Value) Switching Time t ( s) 5 Forword Current IF (mA) Ambient Temperature TA (C) SWITCHING TIME vs. LORD RESISTANCE 1 0.8 TA = 60 C 0.6 0.4 0.2 0.1 10 50 100 500 1000 0.0 10 Load Resistance RL () 102 103 104 105 106 Time (Hr) Remark The graphs indicate nominal characteristics. Data Sheet PN10447EJ01V0DS 7 PS2535-1,PS2535L-1 TAPING SPECIFICATIONS (in millimeters) 1.550.1 4.5 MAX. 10.30.1 7.50.1 1.5 +0.1 -0 16.00.3 2.00.1 4.00.1 1.750.1 Outline and Dimensions (Tape) 4.00.1 5.30.1 8.00.1 0.4 Tape Direction PS2535L-1-E3 PS2535L-1-E4 Outline and Dimensions (Reel) 2.00.5 21.00.8 80.01.0 R 1.0 2542.0 2.00.5 13.00.2 17.51.0 21.51.0 Packing: 1 000 pcs/reel 8 Data Sheet PN10447EJ01V0DS 15.9 to 19.4 Outer edge of flange PS2535-1,PS2535L-1 1.550.1 4.5 MAX. 10.30.1 7.50.1 1.5 +0.1 -0 16.00.3 2.00.1 4.00.1 1.750.1 Outline and Dimensions (Tape) 4.00.1 5.30.1 8.00.1 0.4 Tape Direction PS2535L-1-F3 PS2535L-1-F4 Outline and Dimensions (Reel) 2.00.5 21.00.8 1001.0 R 1.0 3302.0 2.00.5 13.00.2 17.51.0 21.51.0 Packing: 2 000 pcs/reel Data Sheet PN10447EJ01V0DS 15.9 to 19.4 Outer edge of flange 9 PS2535-1,PS2535L-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering * Peak reflow temperature 260C or below (package surface temperature) * Time of peak reflow temperature 10 seconds or less * Time of temperature higher than 220C 60 seconds or less * Time to preheat temperature from 120 to 180C 12030 s * Number of reflows Three * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260C MAX. 220C to 60 s 180C 120C 12030 s (preheating) Time (s) (2) Wave soldering * Temperature 260C or below (molten solder temperature) * Time 10 seconds or less * Preheating conditions 120C or below (package surface temperature) * Number of times One (Allowed to be dipped in solder including plastic mold portion.) * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Cautions * Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler's input and output or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. 10 Data Sheet PN10447EJ01V0DS PS2535-1,PS2535L-1 USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10447EJ01V0DS 11 PS2535-1,PS2535L-1 * The information in this document is current as of November, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. 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The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 12 Data Sheet PN10447EJ01V0DS PS2535-1,PS2535L-1 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. * Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. * Do not burn, destroy, cut, crush, or chemically dissolve the product. * Do not lick the product or in any way allow it to enter the mouth. 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