MITSUBISHI LASER DIODES ML9XX10 SERIES InGaAsP MQW HIGH POWER LASER DIODES TYPE NAME ML976H10 DESCRIPTION FEATURES ML9XX10 series are InGaAsP high power laser diodes @High power (Pulse 200mW) which provides a stable, single transverse mode oscillation @1550nm typical emission wavelength with emission wavelength of 1550nm and pulse light output @Stable single transverse mode oscillation of 200mW. @Low threshold current, low operating current ABSOLUTE MAXIMUM RATINGS @Higt reliability, long operation life @MOQW* active layer * : Multiple Quantum Well APPLICATION OTDR systems Symbol Parameter Conditions Ratings Unit lr Forward current Pulse (Note 1) 1000 mA VAL Reverse Voltage _ 2 Vv Te Case temperature _ 40~+50 Cc Tsig Storage temperature _ 40~+100 Cc Note 1: Duty cycle less than 1%, pulse width less than 10 us ELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25) sg: Limits . Symbol Parameter Test conditions Min. Typ. Max. Unit Ith Threshold current CW = 30 50 mA lop Operating current CW,Po = 10mW _ 50 180 mA Vor (Pp) | Operating voltage Pulse ,IF = 700mA (Note 2) = 3 4.5 V Po (P) Pulse light output Pulse ,IF = 700mA (Note 2) 100 200 _ mw Ac Center wavelength Pulse ,IF = 700mA (Note 2) 1520 1550 1580 nm aA Spectral width (RMS) Pulse IF = 700mA (Note 2) = 7 10 nm CAL Beam divergence angle (parallel) CW,Po = 10mW _ 25 _ deg. 61 Beam divergence angle (perpendicular) CW,Po = 10mW _ 30 _ deg. Note 2: Duty cycle = 1%, pulse width = 10 us NOV. 97MITSUBISHI LASER DIODES ML9XX10 SERIES InGaAsP MQW HIGH POWER LASER DIODES OUTLINE DRAWINGS Dimension : mm #5.628.03 $4.25 3.55+0.1 EN VN lg o Phx) + 3 OR 2) 4 a @uc (3) Case 2-04) SES JA LD =e 2 1+01 3 34 #20 MN 5 @ ONC 2 IS Ae Mh gle @ @i) oO mE oF FY 4 | +1 cys a rf Relerence plane S : : HT, S47 , 2.0+0.25 = Ti | PCD & f j 1 4 $0,450.05 | (yi (2) NOV. 97MITSUBISHI LASER DIODES ML9XX10 SERIES InGaAsP MQW HIGH POWER LASER DIODES TYPICAL CHARACTERISTICS 400 Tce= " E oc ~ Te =25C sonnei = LT : 2 | Pulselr=700mA Mn 10 a 10 us = 300 a 3 Duty=1 % pemmnd 25C ~~ AA > o V4 40C 3 3 200 4 Le 50C 5 2 La C = 5 oT 60 3 A ot 70C @ 5 Mg | 3 2 100 @ fom 2 tP=10ys a 0 Duty=1% 0 125 250 375 500 625 750 875 1000 1525 1550 1575 Pulse forward current IF (mA) Wavelength A (nm) Fig.1 Pulse Light output vs. forward current Fig.2 Spectrum ' Po = 10mW,CW Te =25C 0.8 3 \ 2 a 06 ~ rol 2 | rau > 04 : | \ Oo @ o2 A Oke 60 40 ~20 0 20 40 60 Angle (deg.) Fig.3 Far field patterns NOV. ' 97