ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
= 2800
V
ITAVM = 793 A
ITRMS = 1246 A
ITSM = 10.6×103A
V
(
T0
)
= 1.024 V
rT=0.51
mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 08D2801
Doc. No. 5SYA1060-01 March 03
•
••
•Low on-state and switching losses
•
••
•Designed for traction, energy and industrial applications
•
••
•Optimum power handling capability
Blocking
Maximum rated values 1)
Symbol Conditions 5STP 08D2801 5STP 08D2601 5STP 08D2401
VDRM, VRRM f = 50 Hz, tp = 10 ms 2800 V 2600 V 2400 V
dV/dtcrit Exp. to 0.67 x VDRM, Tvj = 125°C 1000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current IDRM VDRM, Tvj = 125°C 70 mA
Reverse leakage current IRRM VRRM, Tvj = 125°C 70 mA
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force FM81012kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.26 kg
Surface creepage distance DS25 mm
Air strike distance Da14 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5STP 08D2801
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1060-01 March 03 page 2 of 6
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70°C 793 A
RMS on-state current IT(RMS) 1246 A
Peak non-repetitive surge
current
ITSM 10.6×103A
Limiting load integral I2t
tp = 10 ms, Tvj = 125 °C,
VD = VR = 0 V
561.8×103A2s
Peak non-repetitive surge
current
ITSM 11.3×103A
Limiting load integral I2t
tp = 8.3 ms, Tvj = 125 °C,
VD = VR = 0 V
530×103A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VTIT = 1500 A, Tvj = 125 °C 1.8 V
Threshold voltage V(T0) 1.024 V
Slope resistance rT
IT = 1000 A - 3000 A, Tvj= 125 °C
0.51 mΩ
Holding current IHTvj = 25 °C 170 mA
Tvj = 125 °C 90 mA
Latching current ILTvj = 25 °C 450 mA
Tvj = 125 °C 350 mA
Switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on-
state current
di/dtcrit Cont.
f = 50 Hz
200 A/µs
Critical rate of rise of on-
state current
di/dtcrit
Tvj = 125 °C,
IT = IT(AV),
VD ≤ 0.67 VDRM,
IFG = 2 A, tr = 0.3 µs
Cont.
f = 1 Hz
1000 A/µs
Circuit-commutated turn-off
time
tqTvj = 125°C, ITRM = 1500 A,
VR = 200 V, diT/dt = -12.5 A/µs,
VD ≤ 0.67⋅VDRM, dvD/dt = 50 V/µs,
200 µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Recovery charge Qrr Tvj = 125°C, ITRM = 1500 A,
VR = 200 V, diT/dt = -12.5 A/µs
1600 µAs
Gate turn-on delay time tgd VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.3 µs,
Tvj = 25 °C
2µs
5STP 08D2801
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1060-01 March 03 page 3 of 6
Triggering
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Peak forward gate voltage VFGM 12 V
Peak forward gate current IFGM 10 A
Peak reverse gate voltage VRGM 10 V
Mean forward gate power PG(AV) 3W
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate-trigger voltage VGT Tvj = -40 °C
Tvj = 25 °C
Tvj = 125 °C 0.25
4
3
2
V
Gate-trigger current IGT Tvj = -40 °C
Tvj = 25 °C
Tvj = 125 °C 10
500
250
150
mA
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Operating junction
temperature range
Tvj -40 125 °C
Storage temperature range Tstg -40 125 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction
to case
Rth(j-c) Double-side cooled 32 K/kW
Rth(j-c)A Anode-side cooled 52 K/kW
Rth(j-c)C Cathode-side cooled 83 K/kW
Thermal resistance case to
heatsink
Rth(c-h) Double-side cooled 7.5 K/kW
Rth(c-h) Single-side cooled 15 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ic)-th(j i
å
=
τ
i1 234
Ri(K/kW) 13.070 8.030 8.200 2.700
τi(s) 0.4857 0.2162 0.0762 0.0043
Fig. 1 Transient thermal impedance junction-to case.
5STP 08D2801
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1060-01 March 03 page 4 of 6
0
1000
2000
3000
4000
5000
6000
012345
V
T
( V )
I
T
( A )
25°
C
125°C
6
8
10
12
14
16
18
1 10 100
t ( ms )
I
TSM
( kA )
0,3
0,4
0,5
0,6
0,7
0,8
0,9
i
2
dt (10
6
A
2
s)
I
TSM
òi
2
dt
Fig. 2 Max. on-state voltage characteristics Fig. 3 Surge forward current vs. pulse length. Half
sine wave, single pulse, VR = 0 V
5STP 08D2801
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1060-01 March 03 page 5 of 6
0
200
400
600
800
1000
1200
1400
1600
1800
0 200 400 600 800 1000
I
TAV
( A )
P
T
( W )
ψ
= 30° 60° 90° 120° 180°
DC
0
200
400
600
800
1000
1200
1400
1600
1800
0 200 400 600 800 1000
I
TAV
( A )
P
T
( W )
ψ
= 30° 60° 90° 120° 180°
270°
DC
Fig. 4 Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 5 Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T = 1/f
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
I
TAV
( A )
T
C
( °C )
180° 60° 90° 120°
ψ
= 30°
DC
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
I
TAV
( A )
T
C
( °C )
180°
DC
270°
120° 90° 60°
ψ
= 30°
Fig. 6 Max. case temperature vs.average forward
current, sine waveform, f = 50Hz, T = 1/f
Fig. 7 Max. case temperature vs.average forward
current, square waveform, f = 50Hz, T = 1/f
5STP 08D2801
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1060-01 March 03
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
RED
WHITE
Fig. 8 Device Outline Drawing.
