A aa Medial ASHP 3 SQUARE D CO/ GENERAL 95 D) M@@ 6525508 0002083 2 3918590 GENERAL SEMICONDUCTOR I General Tours K > Semiconductor ah Industries, Inc. SQUARE J) COMPANY 95D 02083 D ZENER DIODES CAME Stel 3 BEL CKEK) .. -: THRU ie KE) FEATURES DESCRIPTION CASE 7 Oxide Passivated Junctions Each device 100% tested MAXIMUM RATINGS e JUNCTION AND STORAGE TEMPERATURE: -65 to +200C @ LEAD TEMPERATURE: Not less than 1/16 from the case for 10 seconds @ 230C dc POWER DISSIPATION: 5.0W @ TL = 75C, Lead Length = %" (Derate 40mW/C above 75C) This series of zener diodes is fully specified for use in high power regu- lator applications. These devices are particularly useful in situations where large surge currents are expected. The series has oxide passivated junctions and is packaged in a rugged transfer molded plastic package to offer excel- lent reliabitity in all commercial en- vironments. MECHANICAL CHARACTERISTICS CASE: Void-free, transfer-molded, thermosetting plastic e FINISH: All external surfaces are corrosion resistant. Leads are readily solderable e POLARITY: Cathode indicated by cotor band. When operated in zener mode, cathode will be positive with respect to anode. e MOUNTING POSITION: Any WEIGHT: 0.7 gram (approximate) FIGURE 1Power or Current Derating 6G a o Poay) Maximum Average Power Dissipation (Watts) T, Lead Temperature (C) L = Lead Length To Heat Sink ies et at Neh neste Ce ae bE tose PUEDES fst te tng CASE OUTLINE 100 MIN le DIA. 254 MIN tmm} 457 DIA {rm} 42, ir |_ 335" 315 L 852 (rm} 8.00 (rm) 1 99" MIN 254 MIN (mm) [ a 0a7" - OIA 1082 (om a sd West Tenth Place * Tempe, Arizona 85281 EPS o Te ee Re Caso aC YaSQUARE D CO/ GENERAL 45 3918590 GENERAL SEMICONDUCTOR ELECTRICAL CHARACTERISTICS @ 25C S3D 02084 D General Semiconductor Industries, Inc. T=/1-/S Applles A&B Max Zener Impedance Nominal Max Reverse Leakage ToAll | Suttix |B guttix Onl Zener ott ' A & B Sulllx Only Current Suffix Only y Voltage urren Max M 1 ax Max Reguistor JEQEC V2 @ tz In Zn@ln | Zx@ lax= tOmA In Ova Surge | Voltage currant Type No. Valts mA Ohms Ohms Volts Currant | Regutation lem (Notes 1 & 2}| (Note 3} (Note 3} {Note 3) won| gan ia Amps | AVp, Volts mA . uA Sultlx ulix TTwote 4) | (Note 5) | (Mote 6) 1N5933 3.3 380 3.0 400 300 1.0 1.0 20.0 0.85 1440 1N5934 3.6 350 2.5 500 150 1.0 1.0 18.7 0.80 1320 1N5335 3.9 320 2.0 500 50 1.0 1.0 176 0.54 4220 1N5336 43 2280 2.0 500 10 1.0 1.0 16.4 0.49 1100 1N5337 47 260 2.0 450 6.0 1.0 1.0 153 0.44 1010 1N5338 6.1 240 15 400 1,0 1.0 1.0 14.4 0.39 930 1N5339 5.6 220 4.0 400 1.0 2.0 2.0 13.4 0.25 865 1N5340 6.0 200 1.0 300 1.0 3.0 3.0 12,7 0.19 790 1N5341 6.2 200 1.0 200 1.0 3.0 3.0 12.4 0.10 765 4N5342 6.8 176 > 1.0 200 10 49 5.2 15 0.15 700 1N5343 75 176 1.5 200 10 5.4 8.7 10.7 0.15 630 1N5344 8.2 150 1.5 - 200 10 5.9 6.2 10.0 0.20 560 1N5345 87 150 2.0 200 10 63 6.6 95 0.20 545 1N5346 9.1 150 2.0 150 7.5 6.6 69 9.2 0.22 620 N534 10 125 2.0 125 5.0 7.2 76 86 0.22 475 1N5348 41 126 2.5 125 5.0 8.0 8.4 8.0 0.25 430 1N5349 12 100 25 125 2,0 8.6 8.4 76 0.25 395 1N5350 13 100 25 100 1.0 9.4 9.9 7.0 0.25 365 N5935 14 100 25 75 1.0 10.1 10.6 67 0.25 340 1N5352 18 75 25 75 1.0 10.8 11.5 63 0.25 316 1N5353 16 75 25 75 1.0 11.5 12.2 6.0 0.30 295 1N5354 7 70 25 75 0.5 12.2 129 58 0.35 260 1N5355 18 65 25 75 05 13.0 13.7 55 0.40 264 1N5356 19 65 3.0 75 0.5 13,7 14.4 53 0.40 250 1N5357 20 65 3.0 re 0.5 14.4 15.2 61 0.40 237 1N5358 22 50 35 75 0.5 15.8 16.7 47 0.45 216 4N5S359 24 50 3.5 100 0.5 17.3 18.2 44 0.55 198 4N5360 25 50 4.0 140 0.5 18.0 19.0 43 0.55 190 1N5361 27 60 5.0 120 0.5 10.4 20.6 41 0.60 176 1N5362 28 50 6.0 130 0.5 20.1 21.2 3.9 0.60 170 1N5363 30 40 8.0 140 0.5 21.6 22.8 37 0.60 158 1N5364 33 40 10 150 0.5 23.8 25.1 3.5 0.60 144 N5365 36 30 11 160 0.5 25.9 27.4 3.3 0.65 132 1N5366 39 30 14 170 0.5 28.1 29.7 3.1 0.65 122 1N5367 43 30 20 190 0.5 31.0 32.7 28 0.70 110 1N5368 47 25 25 210 0.5 33.8 35.8 27 0.80 100 1N5369 51 25 27 230 0.5 36.7 38.8 25 0.30 93.0 1N5370 56 20 35 280 0.5 40.3 42.6 23 1.00 88.0 1N5371 60 20 . 40 350 . 0.5 43.0 45.5 22 1.20 79.0 1N5372 62 20 42 400 * 05 44.6 47.1 24 1.35 76.0 1N5373 68 20 44 500 0.5 49.0 61.7 2.0 1.50 70.0 1N5374 7 20 45 620 0.5 64.0 56.0 19 1.60 63.0 1N5375 82 15 65 720 0.5 59.0 62.2 18 1.80 58.0 IN5376 87 15 75 760 05 63.0 66.0 17 2.00 54.5 1N5S377 91 15 75 760 0.5 65.5 69.2 1.6 2.20 52.5 1N5978 100 12 90 800 0.5 72.0 76.0 15 2.60 475 4N5379 110 12 425 1000 0.5 79.2 83.6 1.4 2.50 43.0 1N5380 120 10 170 1150 0.5 86.4 91,2 13 2.50 39.5 1N5381 130 10 190 - 1250 0.8 93.6 98.8 1.2 2.50 3.6 1N5982 140 8.0 230 1500 05 -| 101 106 12 2.50 34.0 4N5383 150 8.0 330 1500 0.5 108 114 im 3.00 31.6 4N5384 160 8.0 350 1650 0.5 115 122 14 3.00 29.4 4N5385 170 8.0 380 1750 05 122 129 1.0 3.00 23.0 N5386 180 5.0 430 1750 0.5 130 137 1.0 4.00 26.4 1N5387 190 5.0 450 1850 0.5 137 144 09 5.00 25.0 1N5388 200 5.0 480 1850 0.5 144 152 09 5,00 23.6 Ve = 1.2 Max, at lp = 1.0A for all types. ot (foe mat) iconductor Industries, Inc. SQUANE F) COMPANY 2001 West Tenth Place Tempe, Arizona 85281 Cesta MR PSUS LL Yd a ind aad rd m t = [=] =] m a D MM 4525508 000c084 4peenereaseryyms Mean ot warren 3918590 GENERAL SEMICONDUCTOR General Semiconductor Industries, Inc. SQUARE D CO/ GENERAL 45 D) M@ 4525508 0002065 b 85D 02085 D NOTES TO ELECTRICAL CHARACTERISTICS . Note 1: Tolerance Designation TOLERANCE DESIGNATIONThe JEDEC type numbers shown have a tolerance of +20% with guaranteed limits on only Vz, In, i. and Ve. Units with guaranteed limits on all parameters are indi- cated by suffix A for 10% tolerance and suffix B" for +5.0% units. ~ Note 2: Specials Nominal zener voltages between the voltages shown and tighter voltage tolerances can be pro- vided. Consult factory. Note 3: Zener Voltage (Vz) and Impedance (Zz7 & Zzx) Test conditions for zener voltage and impedance are as follows: Iz is applied 40 +10ms prior to read- ing. Mounting contacts are located 3/8" to 1/2 from the inside edge of mounting clips to the body of the diode. (Ta = 25C, with a tolerance of from -2C to +8C). Note 4: Surge Current (is) Surge current is specified as the maximum allow- able peak, non-recurrent square-wave current with a pulse width (PW) of 8.3 ms. The data given in Figure 2 may be used to find the maximum surge current for a square wave of any pulse width be- tween 1:0ms and 1000ms by plotting the applicable points on logarithmic paper. Examples of this are shown in Figure 3. The mounting contact is located as specified in Note 3. (Ta=25 C with a tolerance of from -2C to +8C). Note 5: Voltage Regulation ( AVz) Test conditions for voltage regulation are as follows: Vz measurements are made at 10% and then at 50% of the Iz max value listed in the electrical character- istics table. The test currents are the same for the5% and 10% tolerance devices. The test current time duration for each Vz measurement is 40 +10ms. Ta= 25C with a tolerance of from -2C to +8C). Mounting contact is located as specified in Note 3. Note 6: Maximum Regulator Current (Izm) The maximum current shown is based on the maxi- mum voitage of a 5% type unit, therefore, it applies exclusively to the B suffix device. The actual lzm for any device may not exceed the value of 5.0 watts divided by the actual Vz of the device. (TL = 75C at 3/8" maximum from the device body.) , MAXIMUM NON-REPETITIVE SURGE CURRENT FIGURE 2Effect of Nominal Zener Voltage for Selected Pulse Widths (Note 4) 8.3 3 o t, Peak Surge Current (Amps) o nN = Square Wave OA 30 40 60 20 Kot) Vz (Nomina!) Volts FIGURE 3Eftect of Pulse Width for Selected Zener Voltages 3 a 2 a es & E = = E 3 o 2 5 a 3 & ft 2 co S tw, Pulse Width (ms) ee General Semiconductor Industries, Inc. -- 2001 West Tenth Place Tempe, Arizona 85281 3-4 PLPLEI Sepa) ta.bid Clee Re Cable LY 4 oHeu/s~SQUARE D CO/ GENERAL 3918590 GENERAL SEMICONDUCTOR 95 D) W@@ 4525508 0002066 & 85D 02086 D a 0.1 Reuit, py Transient Thermal Resistance Junction-To-Lead (C/W) wp 2 FIGURE 5Temperature Coefficient Range for Units 3.0 to 10 Volts 8V_, Temperature Coefficient (mv/C) @ Iz Vz, Zener Voltage @ Izy (Volts) FIGURE 6Temperature Coefficlent Range for Units 10 to 220 Volts @V,, Temperature Coefficient ({mvPC) @ lzr Vz, Zener Voltage @ Izr (Volts) FIGURE 7Typical Thermal Resistance Primary Path of Conduction is Through the Lead Junction-To-Lead Thermal Resistance ecw Ras L, Lead Length to Heat Sink (Inch) THERMAL CHARACTERISTICS FIGURE 4Typlcal Therma! Response Response Curve is Applicable to any Lead Length ({L). t Time Seconds Mess tt | Ppx > ty be = pt to L, Lead Length = 4% Inch ! D=b/te Pulse ATy = Pulses AT). = 3 APPLICATION NOTE rs The thermal data should not be used to compute = surge capability. The surge timitations given in a Figure 1 are lower than would be expected by con- 2 sidering only thermal resistance and rated junction s temperature. Current crowding effects cause high a hot spot temperatures resulting in device degrada- tion. Since the actual voltage available from a given zener diode is temperature dependent, it is neces- sary to determine junction temperature under any set of operating conditions, in order to calculate its value. The following is recommended: Lead Temperature (T.) should be determined from: Ti = Rota Po + Ta Reta is the lead-to-ambient thermal resistance and Pp is the average power dissipation. Reta is often difficult to obtain so that a measurement of TL is usually preferred. Junction Temperature (Ty) may be found from: Ty = Th + ATu ATu is the increase in junction temperature above the lead temperature. It may be found by using the data of Figure 4 for a train of power pulses or from Figure 7 for dc power. ATyn = 9% Po For worst-case design, using expected limits of lz, limits of Po and the extremes of Ts({ATs) may be estimated. The change in voltage over the temperature range can be found from: AV = @vzAT, Qyz, the zener voltage temperature coefficient, is found from Figures 5 and 6. ~ Under high power-pulse operation, the zener volt- age will vary with time and may also be affected significantly by the zener resistance. For best regu- lation, keep current excursions as low as possible. ae % General Semiconductor Industries, Inc. RQUANE JT) COMPANY ao 2001 West Tenth Place Tempe, Arizona 85281 ee Pc CRE Lee Ld nee EE I ot