T4-LDS-0230, Rev. 1 (111901) ©2011 Microsemi Corporation Page 1 of 6
1N5550 thru 1N5554
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED STANDARD
RECOVERY GLASS RECTIFIERS
Qualified to MIL-PRF-19500/420
Qualified Levels:
JAN, JAN TX, JANTXV
and JANS
DESCRIPTION
Thi s “stan dard rec overy” rectifier diode series is m ilitary q uali fi ed and i s ideal for high-reliability
applications wher e a fail ure cannot be t olerated. Th ese industr y-recogn ized 5.0 amp rated
rec tifiers for wo r king peak r everse volt ages from 200 to 1000 volts are hermet ically sealed
with voidless-gl ass constr uction u sing an internal “ Category 1” metallurgical bond. T hese
devic es a r e al so available in surfac e mount MELF package configu r ations. Mic r osemi als o
of fers numerous oth er r ecti fi er product s to m eet higher an d lower curr ent r atings with various
rec ove r y t im e sp eed requ iremen ts in cluding fast and ult r afast device types in both th r ough-
hole and sur face m ount packag es.
“B” Package
Also available in:
“B” SQ-MELF
(D-5B) Package
(surface mount)
1N5550US – 1N5554US
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5550 thru 1N5554 series.
• Voidless hermetically sealed glass package.
• Extremely robust c onstruction.
• Quadruple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualified versions available per MIL-PRF-19500/420.
• RoHS compliant versions available (commercial grade only).
APPLICAT IONS / BENE FITS
• Standard recovery 5 amp 200 to 1000 volts rect ifier series.
• Military and other high-reliability applications.
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Extremely robust c onstruction.
• Inherently radiation hard as described in Microsemi “Micr oNote 050 ”.
MAXIMUM RAT INGS @ TA = 25 oC unless ot herwis e noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Stor age Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-Lead (1)
RӨJL
22
oC/W
T her mal I mpedan ce @ 10 ms heating ti me
ZӨJX
1.5
oC/W
Maximum Forward Surge Current (8.3 ms half sine)
IFSM
100
A
Average Rectified Forward Current (1) @ T L = 30 oC
IO(L)
5
A
Average Rectified Forward Current
(3)
@ T A = 55
o
C
@ T A = 100
o
C
IO2
(2)
IO3
(4)
3
2
A
A
Working Peak Reverse Voltage 1N5550
1N5551
1N5552
1N5553
1N5554
VRWM 200
400
600
800
1000
V
Solder Temperature @ 10 s
TSP
260
oC
S ee n ot es on ne xt page.
T4-LDS-0230, Rev. 1 (111901) ©2011 Microsemi Corporation Page 2 of 6
1N5550 thru 1N5554
MAXIMUM RAT INGS
Notes: 1. At .375 in ch ( 9.52 mm ) lead le ngt h f ro m body.
2. De rate li ne ar ly at 22.2 mA/ºC from +55 ºC to +100 oC.
3. These IO ratings are for a thermally (PC boards or other) mounting methods where the lead or end-cap temperatures cannot be maintained
and where thermal resistance from mounting point to ambient is still sufficiently controll ed where TJ(MAX) do es not exce ed 175 oC. This
equates to RθJX ≤ 47 ºC/W.
4. De rate li ne ar ly at 26.7 mA/°C above TA= +100 °C to +175 ° C am bi e nt .
M ECHANICAL and PACK AGING
• CASE: Hermetically sealed voidless hard glas s with tungsten slugs.
• TERMINALS: Axial-leads are tin/lead (Sn/Pb) over copper. RoHS co mpliant matte-tin is avai lable for commercial only.
• MARKING: Body paint and part number.
• POLARITY: Cathode band.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: 750 milligrams.
• See Package Dimensions on last page.
PART NOME NCL ATURE
JAN 1N5550 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See Electrical Characteristics
table
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOL S & DEFI NITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maxim um peak voltage that can be applied over the operating tem perature range
excluding all transient voltages (ref JESD282-B).
IO
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
trr
Reverse Recovery Tim e: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
T4-LDS-0230, Rev. 1 (111901) ©2011 Microsemi Corporation Page 3 of 6
1N5550 thru 1N5554
ELECTRICAL CHARACTERISTICS @ TA = 25 oC unless oth er wis e noted.
TYPE
MINIMUM
BREAKDOWN
VOLTAGE
VBR
IR @ 50
µ
A
Volts
FO RWARD VOLTAGE
VF @ IF = 9 A (p k )
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
µ
A
REVERSE
RECOVERY
trr
(Note 1)
µ
s
MIN.
Volts
MAX.
Volts
1N5550
220
0.6 V (pk)
1.2 V (pk)
1.0
2.0
1N5551
440
0.6 V (pk)
1.2 V (pk)
1.0
2.0
1N5552
660
0.6 V (pk)
1.2 V (pk)
1.0
2.0
1N5553
880
0.6 V (pk)
1.3 V (pk)
1.0
2.0
1N5554
1100
0.6 V (pk)
1.3 V (pk)
1.0
2.0
NOTE 1: IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A.
T4-LDS-0230, Rev. 1 (111901) ©2011 Microsemi Corporation Page 4 of 6
1N5550 thru 1N5554
GRAPHS
tH Heating Time (s econ ds )
FIGURE 1
Max i mum Th er mal Imped anc e
Lead Temperature TL (oC)
FIGURE 2
Maximum Current vs. Lead Temperature
NOTES: 1. Dim ensions are in inches.
2. Metric equivalents (to the nearest .01 mm) are given for general information only and are based upon 1 inch = 25.4 mm.
Average Rectified Current in (Amps)
Z
ӨJX
(oC/Watt)
T4-LDS-0230, Rev. 1 (111901) ©2011 Microsemi Corporation Page 5 of 6
1N5550 thru 1N5554
GRAPHS (continued)
VF – Forward Voltage (V)
FIGURE 3
Typical For ward Voltag e vs . Forwar d Current
I
F
– Forward Current (A)
T4-LDS-0230, Rev. 1 (111901) ©2011 Microsemi Corporation Page 6 of 6
1N5550 thru 1N5554
PACKAGE DIM ENSIONS
Ltr
Dimensions
Notes
Inch
Millimeters
Min
Max
Min
Max
BD
0.115
0.180
2.92
4.57
3, 4
BL
0.130
0.300
3.30
7.62
4
LD
0.036
0.042
0.92
1.07
LL
0.900
1.300
22.86
33.02
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The BL dimension shall include the entire body including slugs and s ections of the lead over which the diameter
is uncontrolled. This uncontrolled area is defined as the zone between the edge of the di ode body and extending
.050 inch (1.27 mm) onto the leads.
4. Dimension BD shall be measured at the largest diameter.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
