TPD1034F
2006-10-31
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TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1034F
High-side Power Switch for Motors, Solenoids, and Lamp Drivers
The TPD1034F is a monolithic power IC for high-side switches.
The IC has a vertical MOS FET output which can be directly
driven from a CMOS or TTL logic circuit (e.g., an MPU).
The device offers intelligent self-protection and diagnostic
functions.
Features
z A monolithic power IC with a new structure combining a
control
block (Bi-CMOS) and a vertical power MOS FET (π-MOS)
on a single chip.
z One side of the load can be grounded to a high-side switch.
z Can directly drive a power load from a microprocessor.
z Built-in protection against thermal shutdown and load short-circuiting.
z Incorporates a diagnosis function that allows diagnosis output to
be read externally at load short-circuiting, opening, or overtemperature
z Up to −10 V of counter electromotive force from an L load can be applied.
z Low on-resistance : RON = 80 mΩ (max)
z Low operating current : IDD = 1 mA (typ.), (@VDD = 12 V, VIN = 0 V)
z 8-pin SOP package for surface mounting can be packed in tape.
Note: Due to its MOS structure, this product is sensitive to static electricity. Handle with care.
Weight: 0.08 g (typ.)
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Pin Assignment Marking
Block Diagram
Pin Description
Pin No. Symbol Function
1 IN
Input pin.
Input is CMOS-compatible, with pull-down resistor connected.
Even if the input is open, output will not accidentally turn on.
2 DIAG
Self-diagnosis detection pin. Goes low when overheating is detected or when output is
short-circuited with input on (high).
n-channel open drain.
3 GND Ground pin.
4 VDD Power pin.
5, 6, 7 OUT
Output pin.
When the load is short circuited and current in excess of the detection current (24A typ.) flows to the
output pin, the output automatically turns on or off.
TPD1034
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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Timing Chart
Truth Table
Input Signal Output Signal Diagnosis Output State
H H H
L L L
Normal
H L L
L L L
Overcurrent
H H H
L H H
Load open
H L L
L L L
Overtemperature
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unite
Drain-source voltage VDS 60 V
DC VDD (1) 25 V
Supply voltage
Pulse VDD (2) 60 (Rs = 1Ω, τ= 250 ms) V
DC VIN (1) −0.5 ~ 12 V
Input voltage
Pulse VIN (2) VDD (1) + 1.5 (t = 100 ms) V
Diagnosis output voltage VDIAG −0.5 ~ 25 V
Output current IO Internally limited A
Input current IIN ±10 mA
Diagnosis output current IDIAG 5 mA
1.4 (Note 1)
Power dissipation (Ta = 25°C) PD
2.4 (Note 2)
W
Operating temperature Topr −40 ~ 110 °C
Channel temperature Tch 150 °C
Storage temperature Tstg −55 ~ 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Resistance
Characteristic Symbol Test Condition Unit
89.3 (Note 1)
Thermal resistance Rth (ch-a)
52.1 (Note 2)
°C / W
Note1: Mounted on a glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm) (DC)
Note2: Mounted on a glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm) (tw ≤ 10 s)
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Electrical Characteristics
(Unless otherwise specified, Tch = − 40 ~ 110°C, VDD = 8 ~ 18 V)
Characteristic Symbol
Test
Cir-
cuit
Test Condition Min Typ. Max Unit
Operating supply voltage VDD (opr) ― ― 5 12 18 V
Supply current IDD ― V
DD = 12 V, VIN = 0 ― 1 5 mA
VIH ― V
DD = 12 V, IO = 8 A 3.5 ― ― V
Input voltage
VIL ― V
DD = 12 V, IO = 1.2 mA ― ― 1.5 V
IIN (1) ― V
DD = 12 V, VIN = 5 V ― 50 200 μA
Input current
IIN (2) ― V
DD = 12 V, VIN = 0 −0.2 ― 0.2 μA
On-voltage VDS (ON) ― VDD = 12 V, IO = 8 A,
Tch = 25°C ― ― 0.64 V
On-resistance RDS (ON) ― VDD = 12 V, IO = 8 A,
Tch = 25°C ― ― 0.08 Ω
Output leakage current IOL ― V
DD = 18 V, VIN = 0 ― ― 1.2 mA
Diagnosis output
voltage “L” Level VDL ― V
DD=12 V, IDL = 2 mA ― ― 0.4 V
Diagnosis output
current “H” Level IDH ― V
DD = 18 V, VDH = 18 V ― ― 10 μA
IS (1)
Note 3
1 8 12 ― A
Overcurrent protection
IS (2)
Note 4
2
VDD = 12 V, Tch = 25°C
15 24 ― A
Temperature Ts ― 150 160 200 °C
Thermal shutdown
Hysteresis ΔTs ―
―
― 10 ― °C
Open detection resistance Rops ― V
DD = 8 V 1 50 100 kΩ
tON 3 10 200 ― μs
Switching time
tOFF 3
VDD = 12 V, RL = 5Ω,
Tch = 25°C 10 30 ― μs
Note 3: IS (1) denotes the overcurrent detection value when the load is short circuited and VIN = “L” → “H”
Note 4: IS (2) denotes the overcurrent detection value when the load current is increased while VIN = “H”
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Test Circuit 1
Test Circuit 2
Test Circuit 3
Overcurrent detection
Overcurrent detection
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Tch=25℃
Tch=25℃
RDS(ON) - T
ch
Tch=25℃
Channel temperature Tch (℃)
Tch=25℃
Channel temperature Tch (℃)
IS - T
ch
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Precaution:
1. Since there is no built-in protection against reverse connection of batteries, etc., provide such protection using
external circuits.
.
VDL - T
ch
Channel temperature Tch (℃)
Tch=25℃
ROPS - T
ch
Channel temperature Tch (℃)
Tch=25℃
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TPD1034F
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Package Dimensions
Weight: 0.08 g (typ.)
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RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
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that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
