REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
a
2 CMOS
5 V/5 V, SPST Switches
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2001
ADG601/ADG602
FUNCTIONAL BLOCK DIAGRAMS
D
IN
S
ADG601
D
IN
S
ADG602
SWITCHES SHOWN FOR A LOGIC “1” INPUT
FEATURES
Low On Resistance 2.5 Max
<0.6 On Resistance Flatness
Dual 2.7 V to 5.5 V or Single 2.7 V to 5.5 V Supplies
Rail-to-Rail Input Signal Range
Tiny 6-Lead SOT-23 and 8-Lead Micro-SOIC Packages
Low Power Consumption
TTL/CMOS-Compatible Inputs
APPLICATIONS
Automatic Test Equipment
Power Routing
Communication Systems
Data Acquisition Systems
Sample and Hold Systems
Avionics
Relay Replacement
Battery-Powered Systems
GENERAL DESCRIPTION
The ADG601/ADG602 are monolithic CMOS SPST (Single
Pole, Single Throw) switches with On Resistance typically less
than 2.5 Ω. The Low On Resistance flatness makes the ADG601/
ADG602 ideally suited to many applications, particularly those
requiring low distortion. These switches are ideal for replace-
ments for mechanical relays because they are more reliable, have
lower power requirements, and package size is much smaller.
The ADG601 is a normally open (NO) switch, while the ADG602
is normally closed (NC). Each switch conducts
equally well in
both directions when ON, with the input signal range extending
to the supply rails.
They are available in tiny 6-lead SOT-23 and 8-lead Micro-
SOIC packages.
Table I. Truth Table
ADG601 In ADG602 In Switch Condition
0 1 OFF
10ON
PRODUCT HIGHLIGHTS
1. Low On Resistance (2 Ω typical)
2. Dual ±2.7 V to ±5.5 V or Single 2.7 V to 5.5 V Supplies
3. Tiny 6-lead SOT-23 and 8-lead Micro-SOIC Packages
4. Rail-to-Rail Input Signal Range
REV. 0
–2–
ADG601/ADG602
DUAL SUPPLY
(V
DD
= 5 V 10%, V
SS
= –5 V 10%, GND = 0 V, unless otherwise noted.)
B Version
–40
o
C
Parameter 25
o
C to +85
o
C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
SS
to V
DD
V
V
DD
= +4.5 V, V
SS
= –4.5 V
On Resistance (R
ON
)2 Ω typ V
S
= ±4.5 V, I
S
= –10 mA;
2.5 5.5 Ω max Test Circuit 1
On-Resistance Flatness (R
FLAT(ON)
) 0.35 Ω typ V
S
= ±3.3 V, I
S
= –10 mA
0.4 0.6 Ω max
LEAKAGE CURRENTS
V
DD
= +5.5 V, V
SS
= –5.5 V
Source OFF Leakage I
S
(OFF) ±0.01 nA typ V
S
= +4.5 V/–4.5 V, V
D
= –4.5 V/+4.5 V;
±0.25 ±1 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.01 nA typ V
S
= +4.5 V/–4.5 V, V
D
= –4.5 V/+4.5 V;
±0.25 ±1 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ±0.01 nA typ V
S
= V
D
= +4.5 V, or –4.5 V;
±0.25 ±1 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 µA max
C
IN
, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
80 ns typ R
L
= 300 Ω, C
L
= 35 pF
120 155 ns max V
S
= 3.3 V; Test Circuit 4
t
OFF
45 ns typ R
L
= 300 Ω, C
L
= 35 pF
75 90 ns max V
S
= 3.3 V; Test Circuit 4
Charge Injection 250 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; Test Circuit 5
Off Isolation –60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; Test Circuit 6
Bandwidth –3 dB 180 MHz typ R
L
= 50 Ω, C
L
= 5 pF; Test Circuit 7
C
S
(OFF) 50 pF typ f = 1 MHz
C
D
(OFF) 50 pF typ f = 1 MHz
C
D
, C
S
(ON) 145 pF typ f = 1 MHz
POWER REQUIREMENTS
V
DD
= +5.5 V, V
SS
= –5.5 V
I
DD
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max
I
SS
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max
NOTES
1
Temperature range is as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–SPECIFICATIONS
REV. 0 –3–
ADG601/ADG602
SINGLE SUPPLY
1
B Version
–40C
Parameter 25C to +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
V
DD
= 4.5 V
On Resistance (R
ON
) 3.5 Ω typ V
S
= 0 V to 4.5 V, I
S
= –10 mA;
58 Ω max Test Circuit 1
On-Resistance Flatness (R
FLAT(ON)
) 0.2 0.2 Ω typ V
S
= 1.5 V to 3.3 V, I
S
= –10 mA
0.35 Ω max
LEAKAGE CURRENTS
V
DD
= 5.5 V
Source OFF Leakage I
S
(OFF) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
±0.25 ±1 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
±0.25 ±1 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ±0.01 nA typ V
S
= V
D
= 4.5 V, or 1 V;
±0.25 ±1 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 µA max
C
IN
, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
110 ns typ R
L
= 300 Ω, C
L
= 35 pF
220 280 ns max V
S
= 3.3 V; Test Circuit 4
t
OFF
50 ns typ R
L
= 300 Ω, C
L
= 35 pF
80 110 ns max V
S
= 3.3 V; Test Circuit 4
Charge Injection 20 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF, Test Circuit 5
Off Isolation –60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, Test Circuit 6
Bandwidth –3 dB 180 MHz typ R
L
= 50 Ω, C
L
= 5 pF, Test Circuit 7
C
S
(OFF) 50 pF typ f = 1 MHz
C
D
(OFF) 50 pF typ f = 1 MHz
C
D
, C
S
(ON) 145 pF typ f = 1 MHz
POWER REQUIREMENTS
V
DD
= 5.5 V
I
DD
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max
NOTES
1
Temperature range is as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 5 V 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)
REV. 0
ADG601/ADG602
–4–
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C unless otherwise noted)
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6.5 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –6.5 V
Analog Inputs
2
. . . . . . . . . . . . . . . . . V
SS
–0.3 V to V
DD
+0.3 V
Digital Inputs
2
. . . . . . . . . . . . . . . . . . . . –0.3 V to V
DD
+0.3 V
or 30 mA, whichever occurs first
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . 200 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Micro-SOIC Package
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . 206°C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 44°C/W
SOT_23 Package
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . 229.6°C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . 91.99°C/W
Lead Temperature, Soldering (10 seconds) . . . . . . . . . 300°C
IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . . . 220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding Information
*
ADG601BRT –40°C to +85°C Plastic Surface-Mount (SOT_23) RT-6 STB
ADG601BRM –40°C to +85°C Micro Small Outline (Micro-SOIC) RM-8 STB
ADG602BRT –40°C to +85°C Plastic Surface-Mount (SOT_23) RT-6 SUB
ADG602BRM –40°C to +85°C Micro Small Outline (Micro-SOIC) RM-8 SUB
*Branding on SOT_23 and Micro-SOIC packages is limited to three characters due to space constraints.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG601/ADG602 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
PIN CONFIGURATIONS
6-Lead Plastic Surface Mount (SOT_23)
(RT-6)
TOP VIEW
(Not to Scale)
8
7
6
1
2
3
VDD
S
VSS
IN
D
GND
ADG601/
ADG602
8-Lead Small Outline Micro-SOIC
(RM-8)
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
NC = NO CONNECT
D
NC
NC
VDD
S
GND
IN
VSS
ADG601/
ADG602
REV. 0 –5–
ADG601/ADG602
TERMINOLOGY
V
DD
Most Positive Power Supply Potential
V
SS
Most Negative Power Supply Potential
I
DD
Positive Supply Current
I
SS
Negative Supply Current
GND Ground (0 V) Reference
S Source Terminal. May be an input or output.
D Drain Terminal. May be an input or output.
IN Logic Control Input
V
D
(V
S
) Analog Voltage on Terminals D, S
R
ON
Ohmic Resistance Between D and S
R
FLAT(ON)
Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured
over the specified analog signal range.
I
S
(OFF) Source Leakage Current with the Switch “OFF”
I
D
(OFF) Drain Leakage Current with the Switch “OFF”
I
D
, I
S
(ON) Channel Leakage Current with the Switch “ON”
V
INL
Maximum Input Voltage for Logic “0”
V
INH
Minimum Input Voltage for Logic “1”
I
INL
(I
INH
) Input Current of the Digital Input
C
S
(OFF) “OFF” Switch Source Capacitance. Measured with reference to ground.
C
D
(OFF) “OFF” Switch Drain Capacitance. Measured with reference to ground.
C
D
,C
S
(ON) “ON” Switch Capacitance. Measured with reference to ground.
C
IN
Digital Input Capacitance
t
ON
Delay Between Applying the Digital Control Input and the Output Switching On.
t
OFF
Delay Between Applying the Digital Control Input and the Output Switching Off.
Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching.
Off Isolation A measure of unwanted signal coupling through an “OFF” Switch.
On Response Frequency Response of the “ON” Switch
Insertion Loss Loss Due to the ON Resistance of the Switch
V
D
, V
S
– V
ON RESISTANCE –
5
4
0
–5–45
–3–2–101234
3
2
1
T
A
25 C
2.5V
3V
3.3V
4.5V
5V
TPC 1. On Resistance vs. V
D
(V
S
)
(Dual Supply)
V
D
, V
S
– V
ON RESISTANCE –
10
8
0
0 0.5 5.0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
6
4
2
T
A
25 C
V
SS
0V
V
DD
5.0V
3
9
1
5
7
V
DD
4.5V
V
DD
3.3V
V
DD
3.0V
V
DD
2.7V
TPC 2.
On Resistance vs. V
D
(V
S
)
(Single Supply)
V
D
, V
S
– V
ON RESISTANCE –
5
4
0
–5–45
–3–2–101234
3
2
1
V
DD
+5V
V
SS
–5V
+85 C
+25 C
–40 C
TPC 3. On Resistance vs. V
D
(V
S
) for
Different Temperatures (Dual Supply)
Typical Performance Characteristics
REV. 0
ADG601/ADG602
–6–
V
D
, V
S
– V
ON RESISTANCE –
5
4
0
5.0
3
2
1
V
DD
5V
V
SS
0V
+85 C
+25 C
–40 C
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
TPC 4. On Resistance vs. V
D
(V
S
) for
Different Temperatures (Single Supply)
VS – V
CHARGE INJECTION – pC
500
400
0
–5–45–3–2–101234
300
200
100
TA 25 C
150
450
50
250
350
VDD +5V
VSS –5V
VDD 5V
VSS 0V
TPC 7. Charge Injection vs. Source
Voltage
FREQUENCY – MHz
ATTENUATION – dB
0
–2
–12
0.2 1 10 100
–4
–6
–10
–8
VDD +5V
VSS –5V
TA 25 C
400
TPC 10. On Response vs. Frequency
TEMPERATURE – C
CURRENT – nA
0.5
0.3
–0.5
0
0.1
–0.1
–0.3
–0.2
0.4
–0.4
0
0.2
10 8520 30 40 60 70 8050
I
S
(OFF)
I
D
(OFF)
I
D
, I
S
(ON)
V
DD
5V
V
SS
0V
V
D
4.5V1V
V
S
1V4.5V
TPC 5. Leakage Currents vs.
Temperature (Single Supply)
TEMPERATURE – C
–40 –20
020
40
60
80
TIME – ns
180
160
0
80
60
40
20
140
100
120
VDD 5V
VSS 0V
VDD +5V
VSS –5V
VDD 5V
VSS 0V
VDD +5V
VSS –5V
tON
tOFF
TPC 8. t
ON
/t
OFF
Times vs. Temperature
TEMPERATURE – C
CURRENT – nA
0.5
0.3
–0.5
0
0.1
–0.1
–0.3
–0.2
0.4
–0.4
0
0.2
10 8520 30 40 60 70 8050
V
DD
+5V
V
SS
–5V
V
D
4.5V
V
S
 4.5V
I
D
, I
S
(ON)
I
D
(OFF) I
S
(OFF)
TPC 6. Leakage Currents vs.
Temperature (Dual Supply)
FREQUENCY – MHz
ATTENUATION – dB
0
–10
–80
0.2 1 10 100
–20
–30
–70
–40
–50
–60
V
DD
+5V
V
SS
–5V
T
A
25C
TPC 9. Off Isolation vs. Frequency
–Typical Performance Characteristics (continued)
REV. 0 –7–
ADG601/ADG602
V
S
IN
SD
GND
R
L
300
C
L
35pF
V
OUT
ADG601
ADG602
V
IN
V
IN
V
OUT
50% 50%
90% 90%
50% 50%
V
DD
0.1F
V
DD
V
SS
0.1F
V
SS
t
ON
t
OFF
Test Circuit 4. Switching Times
V
SS
V
S
IN
SD
GND
C
L
1nF
V
OUT
R
S
ADG601
ADG602
V
IN
V
IN
V
OUT
OFF
V
OUT
ON
Q
INJ
= C
L
V
OUT
V
DD
V
DD
V
SS
Test Circuit 5. Charge Injection
SD
A
V
D
I
D
(ON)
NC
NC = NO CONNECT
Test Circuit 3. On Leakage
SD
V
S
A A
V
D
I
S
(OFF) I
D
(OFF)
Test Circuit 2. Off Leakage
I
DS
V1
SD
V
S
R
ON
= V1/I
DS
Test Circuit 1. On Resistance
TEST CIRCUITS
VOUT
50
NETWORK
ANALYZER
RL
50
IN
GND
S
0.1F
D
50
OFF ISOLATION = 20 LOG
VOUT
VS
0.1F
VDD
VDD VSS
VIN
VS
Test Circuit 6. Off Isolation
V
OUT
50
NETWORK
ANALYZER
R
L
50
IN
GND
V
IN
S
0.1F
D
INSERTION LOSS = 20 LOG
V
OUT
WITH SWITCH
V
S
WITHOUT SWITCH
0.1F
V
SS
V
DD
V
SS
V
S
V
DD
Test Circuit 7. Bandwidth
REV. 0
ADG601/ADG602
–8–
8-Lead Micro-SOIC
(RM-8)
0.011 (0.28)
0.003 (0.08)
0.028 (0.71)
0.016 (0.41)
33
27
0.120 (3.05)
0.112 (2.84)
85
41
0.122 (3.10)
0.114 (2.90)
0.199 (5.05)
0.187 (4.75)
PIN 1
0.0256 (0.65) BSC
0.122 (3.10)
0.114 (2.90)
SEATING
PLANE
0.006 (0.15)
0.002 (0.05)
0.018 (0.46)
0.008 (0.20)
0.043 (1.09)
0.037 (0.94)
0.120 (3.05)
0.112 (2.84)
6-Lead Plastic Mount SOT-23
(RT-6)
1 3
4 5
2
6
0.122 (3.10)
0.106 (2.70)
PIN 1
0.071 (1.80)
0.059 (1.50)
0.118 (3.00)
0.098 (2.50)
0.075
(1.90)
BSC
0.037
(0.95) BSC
0.009 (0.23)
0.003 (0.08)
0.022 (0.55)
0.014 (0.35)
10
0
0.020 (0.50)
0.010 (0.25)
0.006 (0.15)
0.000 (0.00)
0.051 (1.30)
0.035 (0.90)
SEATING
PLANE
0.057 (1.45)
0.035 (0.90)
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
C02619–.8–10/01(0)
PRINTED IN U.S.A.