SIEMENS NPN Silicon AF Transistors BCX 68 @ For general AF applications @ High collector current @ High current gain 2 @ Low collector-emitter saturation voltage 3 @ Complementary type: BCX 69 (PNP) 2 vPSO5162 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 BCX 68 - Q62702-C1572 B Cc E | SoOT-89 BCX 68-10 CB Q62702-C1864 BCX 68-16 cc Q62702-C 1865 BCX 68-25 cD Q62702-C 1866 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Vceo 20 Vv Collector-base voltage Vepo 25 Emitter-base voltage Vepo 5 Collector current Ic 1 A Peak collector current Tom 2 Base current Ie 100 mA Peak base current Team 200 Total power dissipation, 7s = 130 C Prot 1 Ww Junction temperature 7} 150 Cc Storage temperature range Tstg 65... + 150 Thermal Resistance Junction - ambient 2) Rina <75 K/W Junction - soldering point Rinss <20 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy peb 40 mm x 40 mm x 1.5 mnv/6 cm? Cu. 899 5.91 Semiconductor GroupSIEMENS BCX 68 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit in. | typ. | max. DC characteristics Colfector-emitter breakdown voitage Ic=30 mA Vieryceo 20 Collector-base breakdown voltage Ie=10 pA Visrycso 25 Emitter-base breakdown voltage le=1yA ViaR)EBo 5 Collector cutoff current Ves = 25 V Vee = 25 V, Ta = 150C Ico 100 nA pA Emitter cutoff current Ves=5V Tepo 10 pA DC current gain? Io= 5 MA, Vee=10V Ic = 500 mA, Vce=1V BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 Iez=1A,Vcee=1V Are 50 85 100 160 60 100 160 250 375 160 250 375 Collector-emitter saturation voltage" Io=1 A, ia =100mA Voesat 0.5 Base-emitter voltage) Ic=5 mA, Vee=10V Ic=1A, Vee=1V Vee AC characteristics Transition frequency Ic = 100 mA, Vce = 5 V, f= 20 MHz 100 MHz 1 Pulse test: 1< 300 ps, D= 2 %. Semiconductor GroupSIEMENS BCX 68 Total power dissipation Pio = f (Ta*; Ts) Collector current Jc = f (Vee) * Package mounted on epoxy Vee=1V 2 BCX 6B EHPOO460 104 BCX 68 EHPO0S61 Prot 0.0 50 100 aoe Tal 150 Permissible pulse load Pio ma/Ptaoc = f (tp) EHPO0462 een Piot mox 5 Pret oc mh it: CO Ces CT CT TT SMUT ! LTT | ATM ITE TTT toe 107 10 1073 1077 5 |, Semiconductor Group mA 10 5 10 0 0.2 04 O06 O8 1.01.2 Vor Transition frequency ft = f (Ic) Vcc = 5 V 103 BOX 88 EHPOO4E3 MHz 102 fol 10 5 10! 5 102 Ts 901 mA 103SIEMENS BCX 68 DC current gain fre = f (Ic) Vee=1V EHPOO4E4 193 Bex 88 10! 10 10? 5101 5102 5103 wl, ma 104 Collector cutoff current Iceo = f (Ta) Ves = 25 V 105 BCX 68 EMPOO4EG nA Lego 104 5 103 5 0 50 100 ~ 7 A C 150 Semiconductor Group 902 Collector-emitter saturation voltage Ie = f (Veesai) hre = 10 1 ot GCx 68 mA EHPOOdES 10! 5 10 0 0.2 0.4 0.6 0.8 Yor sat Base-emitter saturation voltage Ic = f (Veesar) hee = 10 104 CK 6B EHPQ0467 mA 10 5 0 @2 0.4 0.6 0.8 1.0 V 1.2 Vor sat