et HARRIS HI-201HS/883 January 1989 CMOS Analog Switch Features This Circuit is Processed in Accordance to Mil-Std- 883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. Description HI-201HS/883 is a monolithic CMOS Analog Switch featur- ing very fast switching speeds and low ON resistance, This integrated circuit consists of four independently selectable Low ON Resistance .............0.00000: 509Max SPST switches and is pin compatible with the industry * Wide Analog Signal Range .........--.-.2-200- +15sy standard HI-201 switch. Turn-On Time........ 0... cece eee e cert eneeeees 50ns_ Fabricated using silicon-gate technology and the Harris * Analog Current Range (Continuous) .......... 25mA dielectric isolation process, this TTL compatible device TTL/CMOS Compatible * No Latch-Up Pin Compatible with Standard HI-201 Applications * High Speed Multiplexing * High Frequency Analog Switching Sample and Hold Circuits Digital Filters offers improved performance over previously available CMOS analog switches while eliminating the problem of latch-up associated with other fabricated processes. Featuring maximum switching times of 50ns, low ON resistance of 509 maximum, and a wide analog signal range, the HI-201HS/883 is designed for any military appli- cation where improved switching performance, particularly switching speed, is required. (A more detailed discussion on the design and application of the HI-201HS/883 can be found in Application Note 543). Q The HI-201HS/883 is available in a 16 pin Ceramic DIP a Op Amp Gain Switching Networks package and a 20 pin LCC package. The HI-201HS/883 is 3 3 Integrator Reset Circuits specified over the temperature range of -55C to +125C. . E 2% - . . = Pinouts Functional Diagram o HI1-201HS/883 (CERAMIC DIP) TOP VIEW LOGIC | SWITCH 0 ON 1 OFF TOP VIEW }___o INPUT SOURCE Hi LEVEL SHIFTER | Locic o-4 GATE INPUT AND DRIVER ; guTPuT 4-23Specifications HI-201HS/883 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- Terminals.........------+.--++- 36V Thermal Resistance Big Gic t+VSUPPLY to Ground (V+, V-) 00.6... ccc cece cee ence eee +18V Ceramic DIP Package T5C/W 16C /W Analog Input Voltage +Vg....... 0.0.02 eee eee +Vsuppty +2V Ceramic LCC Package 76C/W 19C /AW VG voce ceeeesseeeeeaeeees -VSUPPLY -2V Package Power Dissipation at +75C Digital Input Voltage +VA +Vsuppry +4V Ceramic DIP Package .. 0... ccc cece cece cence scence eee 1.0W -y -VgyppLy -4V Ceramic LCC Package ....... 0. ccc cece eee eee tees 0.99W Peak Current (S or D) Avie ren esse nsec ssc cees Package Power Dissipation Derating Factor Above +75C ae D lem soma C8FAMMIC DIP Package ..........e eee ceeeeeeeees 13.36MW/OC {Pulse at ne en Cyc i en . 1s - D wrteesscees DSmA Ceramic LCC Package ......... 06sec cence nee ees 13.12mMW/C Continuous urrent Any Terminal (Except orD) ....-..... 17 30 Cc CAUTION: Absolute maximum ratings are limiting vaiues, applied Junction Temperature ..... 10-60-22. s sees eres eee + individually, beyond which the serviceability of the circuit may be impaired. Storage Temperature Range ...............+. -65C to +150C Functional operability under any of these conditions is not necessarily Lead Temperature (Soldering 10 sec)....... 6. ce eee eee <275C implied. Recommended Operating Conditions Operating Temperature Range ............... -55C to +1259C = Logic Low Level (VAL)...-.. cece se ceccaeeeeeeseees OV to 0.8V Operating Supply Voltage (tVsuppLy) Logic High Level (Vay)... eee cece een aeons 3.0V to +VSUPPLY Analog Input Voltage (VS)... 26.2. ee eee eee ene TABLE 1. D.C. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: +VSUPPLY = +15V, -VSUPPLY = -15V, GND = OV, Unless Otherwise Specified D.c. | Group A LIMITS PARAMETERS | SYMBOL CONDITIONS SUBGROUPS | TEMPERATURE | MIN MAX | UNITS Switch ON Ros VAL = 0.8V, Vg = 10V, Ip = -1m* 1 +259C - 50 a Resistance All Unused Channels Va, = 0.8V 2,3 -559C to +1250C _ 75 n VAL = 0.8V, Vg = -10V, Ip = 1mA 1 +259C - 50 a All Unused Channels Va; = 0.8V 2,3 ~859C to +1250C ~ 75 n Source OFF IS(OFF) Vg = +14, Vp = -14V, Vay = 3.0V 1 +259C -10 10 nA Leakage Current All!" used Channels Vay = 3.0V, Vp = +14V, Vg = -14V 2,3 -559C to +425C -100 100 nA Vg = -14V, Vp = +14V, Vay = 3.0V 1 +2506 -10 10 nA All Unused Channels Vay = 3.0V, Vp = -14V, Vg = +14V 2,3 ~559C to +125C -100 400 nA Drain OFF ID(OFF) | Yo =-14V, Vg = +14V, Vay = 3.0V 1 +259C ~10 10 nA Leakage Current All Unused Channets Vay = 3.0V, Vp = +14V, Vg = -14V 2,3 -559C to +1259C -100 100 nA Vp = +14V, Vg = -14V, Vay = 3.0V 1 +259C -10 10 nA All Unused Channels Vay = 3.0V, Vp = -14V, Vg = +14V 2,3 ~559C to +125C -100 100 nA Channel ON iD(ON) Vp = Vg = +14V, Vat = 0.8V 1 +25C -10 10 nA Leakage Current All Unused Channels Vai = 0.8V, Vp = Vs =-14V 2,3 -55C to +1259C -100 100 nA Vp = Vg =-14V, Vai = 0.8V 1 +259C -10 10 nA All Unused Channels Va,_ = 0.8V, Vp =Vs =+14Vv 2,3 -55C to +125C -100 100 nA Low Level Input TAL VAL = 0.8V 1 +259C - 500 pA Current All Unused Channels Vay = 4.0V 2,3 559C to +125C _ 500 yA High Level Input \AH VAH = 4.0V 1 +25C - 40 pA Current All Unused Channels Va, = 0.8V 2,3 -559C to +125C _ 40 HA Supply Current +loc All Channels Vay = 0.8V 1,2 +250C, +1250C - 10 mA 3 -5C - 10 mA All Channels Vay = 3.0V 1,2 +2509C, +1259C - 10 mA 3 -65C - 10 mA Supply Current -Icc All Channels Va_ = 0.8V 1,2 +259C, +125C - 6 mA 3 -55C - 6 mA All Channels Vay = 3.0V 1,2 +259C, +125C - 6 mA 3 -55C - 6 mA CAUTION: These devices are sensitive to electrostatic discharge. Proper I.C. handling procedures should be followed. 4-24HI-207HS/883 TABLE 2. A.C, ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: +VSUPPLY = +15V, -VSUPPLY = -15V, GND = OV, Unless Otherwise Specified LIMITS GROUP A PARAMETERS SYMBOL CONDITIONS SUBGROUPS | TEMPERATURE | MIN MAX | UNITS Turn ON" Time tON) CL=35pF, RL = 1kA 9 +259C - 50 ns VaH = 3.0V, Val = 0.8V 10,11 -59C, +125C - 100 ns Turn OFF Time XOFF) CL = 35pF, RL = 1k 9 +250C - 50 ns VAH = 3.0V, Val = 0.8V 10,11 -5C, +1250C - 100 ns TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1) Device Characterized at: +VSuPPLy = +15V, -VSUPPLY = -15V, GND = OV LIMITS PARAMETERS SYMBOL CONDITIONS NOTE | TEMPERATURE | MIN MAX | UNITS Address Capacitance CA f= 1MHz, Var = OV 1 +250C - 35 pF Switch Input CS(OFF) f= 1MHz, Vay = 5V 1 +25C - 20 pF Capacitance Measure Input to Ground Switch Output CD(OFF) f= 1MHz, Vay = 5V 1 +259C - 20 pF o Capacitance Measure Output to Ground On du < Coon) | f= 1MHz, VaL = OV 1 +250 - 50 pF z 3 Measure Output to Ground = o Drain to Source Cos {= 1MHz, Vay = 5V 1 +250C - 2.0 pF 5 Capacitance Off Isolation Viso f = 100kHz, Va = 3.0,R, = 1K 1 +259C 50 - aB VGEN = 1Vp-p,. CL = 10pF Crosstalk VcT f = 100kHz, Va = 3.0, RL = 1K 1 +259C 50 - dB VGEN = 1Vp-p, CL = 10pF Charge Transter VcoTE RL=1K,Cy = 0.01yF 1 +259C - 10 mV Error NOTE 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflact lot to lot and within lot variation. TABLE 4, ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 & 2) interim Electrical Parameters (Pre Burn-in) 1 Final Electrical Test Parameters 1*, 2,3, 9, 10, 11 Group A Test Requirements 1,2, 3,9, 10, 11 Groups C & D Endpoints 1 * PDA applies to Subgroup 1 only. 4-25HI-201HS/883 Test Circuits INPUT LEAKAGE CURRENT Wee ID(OFF) of OH IF4 Zt 3 ver IS(OFF) Veo OH Veo ID(ON) Vin O- SUPPLY CURRENTS vec nf D> CHARGE TRANSFER ERROR - AG STEP z STEP (SEE NOTE) i wv w. {SEE NOTE) 1 af rst Sh tree Ts Haat = ov a we Lim mt ES = | 5, aH = TEST 04 Test powt J v-_ END a POINT aM ze wt = 4 ie - 7 ayo Gap TO NOTE: The pulse generator has the following characteristics: VGen = 0 to 3V, rise time = 20ns, fall time = 20ns, PRR = 100kHz. Rps Vee wef >}-p = eng vee OFF CHANNEL ISOLATION SINE WAVE GENERATOR ve (SEE NOTED zavoT Mt LO +e) = TEST ~ o - 4% P OINT v Gna we I J =a Vy ono CROSSTALK BETWEEN CHANNELS NOTE: The pulse generator has the following characteristics VGEN = 1Vp-p. frequency = 100kHz See Test Tech Brief For Additional InformationHI-201HS/883 Switching Waveforms PULSE GENERATOR (SEE NOTE 1) Su +15V +10V OUTPUT RL =1KQ +5% CL=35pF +5% includes Wiring and Probe Capacitance RL CL GND NOTES: 1. The pulse generator has the following characteristics VGEN = 3-0V. tTHL 20ns. 2. See Table 2 for complete terminal conditions. FALL TIME DIGITAL INPUT 90% 90% conoiTion SWITCH A OUTPUT ov ov CONDITION B 90% , 90% NOTE: Rise time and fall time = 20ns 4-27 CMOS ANALOG SWITCHESHi-201HS/883 Burn-in Circuits HI-201HS/883_ CERAMIC DIP NOTES: R= 10K9), 5%, 1/4 or 1/2W Cy = Co = 0.1nF (one per row) or .O1pF (ane per socket) Dy = Dg = IN4002 or equivalent (one per board) lave) - (v-)| = 30 HI-201HS/883. CERAMIC LCC 4-28HI-201HS/883 Schematic Diagrams REFERENCE/LEVEL SHIFTER os ons tes pure | 4+ MP? : {. t. wane J fda) Y , IL aw Oh \/ | pte he var a ' ars Bie / a KK 1 2 a SS ' ym fees a we A T | Ls SWITCHES SWITCH CELL CMOS ANALOG P39 ue i gx fot fas LF wnatHi-201HS/883 Die Characteristics DIE DIMENSIONS: 92 x 111 x 19 mils METALLIZATION: Type: Aluminum Thickness: 16kA + 2kA GLASSIVATION: Type: Nitride Thickness: 7kA + 0.7kA DIE ATTACH: Material: Gold/Silicon Eutectic Alloy Temperature: Ceramic DIP 460C (Max) Ceramic LCC 420C (Max) WORST CASE CURRENT DENSITY: 4.5 x 105A/cm2 at 25mA This device meets Glassivation Integrity Test requirement per Mil-Std-883 Method 2021 and Mil-M-38510 paragraph 3.5.5.4. Metallization Mask Layout HI-201HS/883 4-30HI-2017HS/883 Packagingt 16 PIN CERAMIC DIP 753 785 140 005 MIN j>~ -170 | .200 MAX L + 15 | 150 MIN -060 { 125 | 1 -080 MAX -1B0 -1D0 BSC .050 * .065 LEAD MATERIAL: Type B LEAD FINISH: Type A PACKAGE MATERIAL: Ceramic, 90% Alumina PACKAGE SEAL: Material: Glass Frit Temperature: 450C + 10C Method: Furnace Seal 20 PAD CERAMIC LCC -265 -285 ~ -290 -310 008 * -015 oe. 15 * INCREASE MAX LIMIT BY .003 INCHES MEASURED AT CENTER OF FLAT FOR SOLDER FINISH INTERNAL LEAD WIRE: Material: Aluminum Diameter: 1.25 Mil Bonding Method: Ultrasonic COMPLIANT OUTLINE: 38510 D-2 -089 PAD MATERIAL: Type C PAD FINISH: Type A FINISH DIMENSION: Type A PACKAGE MATERIAL: Multilayer Ceramic, 90% Alumina PACKAGE SEAL: Material: Gold/Tin (80/20) Temperature: 320C + 100C Method: Furnace Braze 003 .075 015 [" 095 FU Ul UU .006 wp M's 022 ol S42 028 ons MIN 358 045 > ey 050 055 Y 4 ase C10) C1 1 . 2342 358 063 ty 077 o7s | f INTERNAL LEAD WIRE: Material: Aluminum Diameter: 1.25 Mil Bonding Method: Ultrasonic COMPLIANT OUTLINE: 38510 C-2 NOTE: All Dimensions are ea , Dimensions are in inches. 4-31 f Mil-M-38510 Compliant Materials, Finishes, and Dimensions. CMOS ANALOG SWITCHESG? HARRIS DESIGN INFORMATION 1-201HS High Speed Quad SPST CMOS Analog Switch The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application and design data only. No guarantee is implied. Typical Performance Characteristics Uniess Otherwise Specified: Ta = +25C, VgyuppLy = +15V VAH = 3.0V, VaL = 0.8V ON RESISTANCE vs. ANALOG SIGNAL LEVEL AND TEMPERATURE [/ gn -ON RESISTANCE {OHMS} & 8 I | oe - | a s ne 8 a8 a + vin - ANALOG INPUT (VOLTS} ID(ON) vs. TEMPERATURE 1- LEAKAGE CURRENT (nA) 1. T - TEMPERATURE (C) DIGITAL INPUT LEAKAGE CURRENT vs. TEMPERATURE 1- LEAKAGE CURRENT (WA) i eee eh 25 3 4556 7% 988 108115125. T- TEMPERATURE {5C) ON RESISTANCE vs. ANALOG SIGNAL LEVEL AND POWER SUPPLY VOLTAGE as ' 1 bo 3 oof. nf i a 2 og SY . : h~2 i B a0 5 goa. Pe = 3 Bom op vera vee. BIN YIcay 6 iaw Yay al : 15 10 6 v VIN ANALOG INPUT [VOL TS) LEAKAGE CURRENT vs. ANALOG INPUT VOLTAGE 100 Vio HBV Ve = ABV \SQFF Vp =0V + IDOFF +Vs~ OV | 200 seo LL 1412-10-84 4-202 4668 1012 14 Vin - ANALOG INPUT (VOLTS) | - LEAKAGE CURRENT - (pA) -180 -180 LEAKAGE CURRENT vs. ANALOG INPUT VOLTAGE (Vn = +14V, Vin = -14V) 10 ~ + | = LEAKAGE CURRENT (wal Vea BV vem 15 Tp = #2606 ho HOFF Vp = ov + IDOFF+ 5 = OV 10.0 -16.5 -15.0 14.8 -14.0 +140 +165 $15.0 415.5 +180 VIN - ANALOG INPUT (VOLTS} 'S(OFF) Or ID(OFF) Vs. TEMPERATURE 100.0 10.0 1 - LEAKAGE CURRENT (nA} & 75 T - TEMPERATURE (C) SUPPLY CURRENT vs. TEMPERATURE 7 ' - peony [ | || a. . . } | bo 4 zo ot 4 & + t poy 7 t 1 5 : uw 4 2 ~~ , 23 ~ z bog | a 2p--- | boot 4 1 = ; | Hl 24 . | ! +V = +15V ! = r v= -15V | \ ' od L -L_.. 66-35-15 5 2545 OBESCBSSCNOS125 T . TEMPERATURE (0C} SWITCHING TIME vs. TEMPERATURE T i ni 1- SWITCHING TIME (nuect V-= BV RL = Ka ce 56-35-15 5 28S, 106125 T - TEMPERATURE (9C)HI-2071HS DESIGN INFORMATION (continued) The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application and design data only. No guarantee is implied. Typical Performance Characteristics Uniess Otherwise Specified: Ta = +25C, VgyppLy = +15V VAH = 3.0V, VAL = 0.8V SWITCHING TIME vs. SWITCHING TIME vs. POSITIVE AND SWITCHING TIME vs. POSITIVE SUPPLY VOLTAGE NEGATIVE SUPPLY VOLTAGE NEGATIVE SUPPLY VOLTAGE a tf f (SWITCHING TIME (nene) 1 - BWITCHING TIME (neec) 1 BNITCHING TIME (neect 8 ton 5 F #8 8 OW NM 1 13 4 16 so 47) & of HO 4 2 3 te 6 6 wo oN 2 1 MO V+ - POSITIVE SUPPLY (VOLTS) W*, - - POSITIVE ANO NEGATIVE SUPPLY (VOLTS) V - NEGATIVE SUPPLY (VOLTE) SWITCHING TIME vs. CHARGE INJECTION vs. 8 wo INPUT LOGIC AMPLITUDE OFF ISOLATION vs. FREQUENCY ANALOG INPUT z w z ep ooo ||8 j es tet B aol en on. 5 Q = = ; RRP por Z| 18 Ez pe. G 2 va > ge ze 3 top A seo NK wORFz ; . + s a 209 +1 180 oo a j =. a :- po IE =~ | ol woe o wb tL NK __orrt Me 3 45 GL = 10000 | wn ars sa.anion - 100 -60 ! a 1 102 a ow 7 - -10 +6 +10 Van - DIGITAL INPUT AMPLITUDE (VOLTS) 1 FREQUENCY (Ha) Vin - ANALOG INPUT (VOLTS) CROSSTALK vs. INPUT SWITCHING THRESHOLD vs. POSITIVE CAPACITANCE vs. FREQUENCY AND NEGATIVE SUPPLY VOLTAGES ANALOG INPUT 6 - CAPACITANCE (nF) VaTH INPUT LOGIC THRESHOLD (VOLTS? a 5 6 F @ 9 M9 11 1 19 14 $V POWER SUPPLY VOLTAGE (VOLTS) s 8 * Vin - ANALOG INPUT {VOLTS