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FDMC5614P P-Channel PowerTrench® MOSFET

FDMC5614P Rev.C2

www.fairchildsemi.com

1

FDMC5614P

P-Channel PowerTrench® MOSFET

-60V, -13.5A, 100mΩ

Features

Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A

Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A

Low gate charge

Fast switching speed

High performance trench technology for extremely low rDS(on)

High power and current handling capability

RoHS Compliant

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild

Semiconductor's advanced PowerTrench® process. It has been

optimized for power management applications requiring a wide

range of gate drive voltage ratings (4.5V-20V).

Application

Power management

Load switch

Battery protection

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

VDS Drain to Source Voltage -60 V

VGS Gate to Source Voltage ±20 V

ID

Drain Current -Continuous (Package limited) TC = 25°C -13.5

A

-Continuous (Silicon limited) TC = 25°C -14

-Continuous TA = 25°C (Note 1a) -5.7

-Pulsed -23

PD

Power Dissipation TC = 25°C 42 W

Power Dissipation TA = 25°C (Note 1a) 2.1

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

RθJC Thermal Resistance, Junction to Case 3.0 °C/W

RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60

Device Marking Device Package Reel Size Tape Width Quantity

5614P FDMC5614P Power 33 7’’ 8mm 3000 units

S

G

D

81

72

3

4

6

5

Pin 1

MLP 3.3x3.3

Bottom

D

S

G

Top

May 2014

FDMC5614P P-Channel PowerTrench® MOSFET

FDMC5614P Rev.C2 www.fairchildsemi.com

2

Electrical Characteristics TJ = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain to Source Breakdown Voltage ID = -250μA, VGS = 0V -60 V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

Coefficient ID = -250μA, referenced to 25°C -54 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = -48V, VGS = 0V -1 μA

IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA

On Characteristics

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250μA-1 -1.95 -3 V

ΔVGS(th)

ΔTJ

Gate to Source Threshold Voltage

Temperature Coefficient ID = -250μA, referenced to 25°C 4.7 mV/°C

rDS(on) Static Drain to Source On Resistance

VGS = -10V, ID = -5.7A 84 100

mΩVGS = -4.5V, ID = -4.4A 108 135

VGS = -10V, ID = -5.7A , TJ = 125°C 140 168

gFS Forward Transconductance VDS = -15V, ID = -5.7A 11 S

Dynamic Characteristics

Ciss Input Capacitance VDS = -30V, VGS = 0V,

f = 1MHz

795 1055 pF

Coss Output Capacitance 140 185 pF

Crss Reverse Transfer Capacitance 60 90 pF

Switching Characteristics

td(on) Turn-On Delay Time

VDD = -30V, ID = -1A

VGS = -10V, RGEN = 6Ω

10 21 ns

trRise Time 11 23 ns

td(off) Turn-Off Delay Time 32 65 ns

tfFall Time 11 22 ns

Qg(TOT) Total Gate Charge at 10V VGS = -10V

VDD = -30V

ID = -5.7A

15 20 nC

Qgs Gate to Source Gate Charge 1.6 2.1 nC

Qgd Gate to Drain “Miller” Charge 2.7 3.5 nC

Drain-Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -3.2A -0.8 -1.2 V

trr Reverse Recovery Time IF = -3.2A, di/dt = 100A/μs 36 ns

Qrr Reverse Recovery Charge 29 nC

Notes:

1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the

user's board design.

(a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.

(b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper.

2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

a. 60°C/W when mounted on

a 1 in2 pad of 2 oz co pper

b.135°C/W when mounted on a

minimum pad of 2 oz copper

FDMC5614P P-Channel PowerTrench® MOSFET

FDMC5614P Rev.C2 www.fairchildsemi.com

3

Typical Characteristics TJ = 25°C unless otherwise noted

Figure 1.

012345

0

5

10

15

20

25

VGS = -4.5V

VGS = -3.0V

VGS = -10V

VGS = -3.5V

PULSE DURATION = 300μs

DUTY CYCLE = 2.0%MAX

VGS = -5V

-ID, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

0 5 10 15 20 25

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VGS = -3.5V

VGS = -3.0V

VGS = -4.5V

VGS = -5V

PULSE DURATION = 300μs

DUTY CYCLE = 2.0%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT(A)

VGS = -10V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

-50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = -5.7A

VGS = -10V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERATURE (oC)

vs Junction Temperature

Figure 4.

2345678910

50

100

150

200

250

300

350

PULSE DURATION =300μs

DUTY CYCLE = 2.0%MAX

TJ = 125oC

TJ = 25oC

ID = -5.7A

rDS(on), DRAIN TO

SOURCE ON-RESISTANCE (mOHM)

-VGS, GATE TO SOURCE VOLTAGE (V)

O n -R es i s t an ce v s G a t e to

Source Voltage

Figure 5. Transfer Characteristics

0123456

0

5

10

15

20

25

30

VDD = -5V

TJ =-55oC

TJ = 25oC

TJ = 125oC

PULSE DURATION = 300μs

DUTY CYCLE = 2.0%MAX

-ID, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.2 0.4 0.6 0.8 1.0 1.2 1.4

1E-4

1E-3

0.01

0.1

1

10

30

TJ = -55oC

TJ = 25oC

TJ = 125oC

VGS = 0V

-IS, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

S ou r ce to D ra i n D io d e

Forward Voltage vs Source Current

FDMC5614P P-Channel PowerTrench® MOSFET

FDMC5614P Rev.C2 www.fairchildsemi.com

4

Figure 7.

0481216

0

2

4

6

8

10

ID = -5.7A

VDD = -30V

VDD = -20V

-VGS, GATE TO SOURCE VOLTAGE(V)

Qg, GATE CHARGE(nC)

VDD = -40V

Gate Charge Characteristics Figure 8.

0.1 1 10

10

100

1000

60

f = 1MHz

VGS = 0V

Crss

Coss

Ciss

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

2000

C a p a c i t a n c e v s D r a i n

to Source Voltage

Figure 9.

0.01 0.1 1 10 100

1

2

3

4

5

6

7

8

TJ = 25oC

TJ = 125oC

tAV, TIME IN AVALANCHE(ms)

-IAS, AVALANCHE CURRENT(A)

U n c l a m p e d I n d u c t i v e

Switching Capability

Figure 10.

0.1 1 10 100

1E-3

0.01

0.1

1

10 100us

60

DC

10s

1s

100ms

10ms

1ms

SINGLE PULSE

TJ = MAX RATED

RθJA = 135oC/W

TA = 25oC

rDS(on) LIMITED

-ID, DRAIN CURRENT (A)

-VDS, DRAIN-SOURCE VOLTAGE (V)

200

F o r w a r d B i a s S a f e

Operating Area

Figure 11.

10-4 10-3 10-2 10-1 100101102103

1

10

100

1000

SINGLE PULSE

RθJA = 135oC/W

0.5

VGS = -10V

P(PK), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (s)

T

A

= 25

o

C

I = I

25

FOR TEMPERATURES

ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

150 TA

–

125

------------------------

Single Pulse Maximum Power Dissipation

Typical Characteristics TJ = 25°C unless otherwise noted

FDMC5614P P-Channel PowerTrench® MOSFET

FDMC5614P Rev.C2 www.fairchildsemi.com

5

Figure 12. Transient Thermal Response Curve

10-4 10-3 10-2 10-1 100101102103

0.001

0.01

0.1

1

SINGLE PULSE

DUTY CYCLE-DESCENDING ORDER

0.0005

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

Typical Characteristics TJ = 25°C unless otherwise noted

r(t), NORMALIZED EFFE CT IVE TRANSIENT

THERMAL RESISTANCE

PDM

t1t2

NOTES:

Duty Cycle, D = t1 / t2

ZθJA(t) = r(t) x RθJA

Peak TJ = PDM x ZθJA(t) + TA

RθJA = 135 °C/W

t, RECTANGULAR PULSE DURATION (sec)

www.onsemi.com

1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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