NTD6416AN, NVD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested AEC Q101 Qualified - NVD616AN These Devices are Pb-Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage - Continuous VGS $20 V ID 17 A Continuous Drain Current Steady State Power Dissipation Steady State Pulsed Drain Current TC = 25C TC = 100C TC = 25C PD 71 62 A -55 to +175 C IS 17 A Single Pulse Drain-to-Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 17 A, L = 0.3 mH, RG = 25 W) EAS 43 mJ Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds TL 260 C 100 V 81 mW @ 10 V 17 A N-Channel D G S 4 4 1 2 1 3 Symbol Max Unit Junction-to-Case (Drain) Steady State RqJC 2.1 C/W Junction-to-Ambient (Note 1) RqJA 40 2 3 IPAK CASE 369D STYLE 2 DPAK CASE 369AA STYLE 2 THERMAL RESISTANCE RATINGS Parameter ID MAX (Note 1) W IDM Source Current (Body Diode) RDS(on) MAX 11 TJ, Tstg tp = 10 ms Operating and Storage Temperature Range V(BR)DSS MARKING DIAGRAM & PIN ASSIGNMENTS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). 4 Drain YWW 64 16ANG 4 Drain 1 Gate 2 Drain 6416AN Y WW G YWW 64 16ANG * * * * * 3 Source 1 Gate = Device Code = Year = Work Week = Pb-Free Package 2 Drain 3 Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. (c) Semiconductor Components Industries, LLC, 2011 September, 2011 - Rev. 2 1 Publication Order Number: NTD6416AN/D NTD6416AN, NVD6416AN ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current 112 IDSS Gate-to-Source Leakage Current V VGS = 0 V, VDS = 100 V mV/C TJ = 25C 1.0 TJ = 125C 10 IGSS VDS = 0 V, VGS = "20 V VGS(TH) VGS = VDS, ID = 250 mA mA "100 nA 4.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage 2.0 Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On-Resistance RDS(on) VGS = 10 V, ID = 17 A 73 gFS VDS = 5 V, ID = 10 A 12 S 620 pF Forward Transconductance 7.7 mV/C 81 mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 50 Total Gate Charge QG(TOT) 20 Threshold Gate Charge QG(TH) 1.0 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 10 Plateau Voltage VGP 5.8 V Gate Resistance RG 2.4 W td(on) 9.2 ns VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 10 V, VDS = 80 V, ID = 17 A 110 nC 3.6 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10 V, VDD = 80 V, ID = 17 A, RG = 6.1 W tf 22 24 20 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 17 A TJ = 25C 0.85 TJ = 125C 0.7 56 VGS = 0 V, dIS/dt = 100 A/ms, IS = 17 A QRR http://onsemi.com 2 V ns 41 15 135 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. 1.2 nC NTD6416AN, NVD6416AN TYPICAL CHARACTERISTICS 10 V ID, DRAIN CURRENT (A) TJ = 25C 6.0 V 20 5.5 V 10 5.0 V 4 6 8 25 20 15 10 0 10 3 5 6 7 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.09 0.08 0.07 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (V) VGS = 10 V TJ = 175C 0.20 TJ = 125C 0.15 0.10 TJ = 25C 0.05 TJ = -55C 0.00 8 10 10000 IDSS, LEAKAGE (nA) 2 1.5 1 25 50 75 100 125 150 14 16 20 18 VGS = 0 V ID = 17 A VGS = 10 V 0 12 ID, DRAIN CURRENT (A) Figure 4. On-Resistance versus Drain Current and Gate Voltage 3 -25 8 0.25 Figure 3. On-Region versus Gate Voltage 0.5 -50 4 VGS, GATE-TO-SOURCE VOLTAGE (V) 0.10 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = -55C 2 VDS, DRAIN-TO-SOURCE VOLTAGE (V) ID = 17 A TJ = 25C 2.5 TJ = 25C TJ = 125C Figure 1. On-Region Characteristics 0.11 0.06 30 5 4.5 V 2 VDS w 10 V 35 6.5 V 30 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 40 7.5 V ID, DRAIN CURRENT (A) 40 100 TJ = 125C 10 175 TJ = 150C 1000 10 TJ, JUNCTION TEMPERATURE (C) 20 30 40 50 60 70 80 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature 90 100 Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTD6416AN, NVD6416AN TJ = 25C VGS = 0 V 1000 C, CAPACITANCE (pF) 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 1200 800 Ciss 600 400 200 0 Coss Crss 0 20 40 60 80 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 100 VDS 4 40 2 0 20 ID = 17 A TJ = 25C 0 IS, SOURCE CURRENT (A) t, TIME (ns) td(off) tr tf 1 60 5 10 15 Qg, TOTAL GATE CHARGE (nC) 0 20 20 100 1 Qgd Figure 8. Gate-to-Source Voltage and Drain-to-Source Voltage versus Total Charge VDS = 80 V ID = 17 A VGS = 10 V 10 80 VGS Qgs 6 Figure 7. Capacitance Variation 1000 100 QT 8 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS td(on) 10 RG, GATE RESISTANCE (W) TJ = 25C VGS = 0 V 15 10 5 0 0.5 100 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance 1.0 Figure 10. Diode Forward Voltage versus Current 1000 50 AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) ID = 17 A 100 10 ms 100 ms 10 VGS = 10 V SINGLE PULSE TC = 25C 1 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 1 ms 10 ms dc 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1000 40 30 20 10 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE 175 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTD6416AN, NVD6416AN TYPICAL CHARACTERISTICS 10 R(t) (C/W) 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) 0.1 1 10 Figure 13. Thermal Response ORDERING INFORMATION Device Package Shipping NTD6416ANT4G DPAK (Pb-Free) 2500 / Tape & Reel NTD6416AN-1G IPAK (Pb-Free) 75 Units / Rail NVD6416ANT4G DPAK (Pb-Free) 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 5 NTD6416AN, NVD6416AN PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA-01 ISSUE B A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- NTD6416AN, NVD6416AN PACKAGE DIMENSIONS IPAK CASE 369D-01 ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 -T- SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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