NTD6416ANT4G - ON Semiconductor

September, 2011 − Rev. 2

1Publication Order Number:

NTD6416AN/D

NTD6416AN, NVD6416AN

N-Channel Power MOSFET

100 V, 17 A, 81 mW

Features

•Low RDS(on)

•High Current Capability

•100% Avalanche Tested

•AEC Q101 Qualified − NVD616AN

•These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 100 V

Gate−to−Source Voltage − Continuous VGS $20 V

Continuous Drain

Current

Steady

State

TC = 25°CID17 A

TC = 100°C11

Power Dissipation Steady

State

TC = 25°C PD71 W

Pulsed Drain Current tp = 10 msIDM 62 A

Operating and Storage Temperature Range TJ, Tstg −55 to

+175

°C

Source Current (Body Diode) IS17 A

Single Pulse Drain−to−Source Avalanche

Energy (VDD = 50 Vdc, VGS = 10 Vdc,

IL(pk) = 17 A, L = 0.3 mH, RG = 25 W)

EAS 43 mJ

Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

TL260 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Case (Drain) Steady State RqJC 2.1 °C/W

Junction−to−Ambient (Note 1) RqJA 40

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

(Cu Area 1.127 sq in [2 oz] including traces).

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MARKING DIAGRAM

& PIN ASSIGNMENTS

6416AN = Device Code

Y = Year

WW = Work Week

G = Pb−Free Package

DPAK

CASE 369AA

STYLE 2

YWW

16ANG

4 Drain

Source

Gate 2

Drain

IPAK

CASE 369D

STYLE 2

4 Drain

Gate

Drain

Source

YWW

16ANG

V(BR)DSS RDS(on) MAX

ID MAX

(Note 1)

100 V 81 mW @ 10 V 17 A

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

N−Channel

NTD6416AN, NVD6416AN

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA100 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ112 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = 100 V

TJ = 25°C 1.0 mA

TJ = 125°C 10

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "20 V "100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA2.0 4.0 V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ7.7 mV/°C

Drain−to−Source On−Resistance RDS(on) VGS = 10 V, ID = 17 A 73 81 mW

Forward Transconductance gFS VDS = 5 V, ID = 10 A 12 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance CISS

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

620 pF

Output Capacitance COSS 110

Reverse Transfer Capacitance CRSS 50

Total Gate Charge QG(TOT)

VGS = 10 V, VDS = 80 V, ID = 17 A

20 nC

Threshold Gate Charge QG(TH) 1.0

Gate−to−Source Charge QGS 3.6

Gate−to−Drain Charge QGD 10

Plateau Voltage VGP 5.8 V

Gate Resistance RG2.4 W

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time td(on)

VGS = 10 V, VDD = 80 V,

ID = 17 A, RG = 6.1 W

9.2 ns

Rise Time tr22

Turn−Off Delay Time td(off) 24

Fall Time tf20

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V, IS = 17 A

TJ = 25°C 0.85 1.2 V

TJ = 125°C 0.7

Reverse Recovery Time trr

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 17 A

56 ns

Charge Time ta41

Discharge Time tb15

Reverse Recovery Charge QRR 135 nC

2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

3. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

NTD6416AN, NVD6416AN

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TYPICAL CHARACTERISTICS

0246810

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 1. On−Region Characteristics

TJ = 25°C10 V 7.5 V

6.5 V

6.0 V

5.5 V

5.0 V

2345678

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 2. Transfer Characteristics

VDS w 10 V

TJ = 125°C

TJ = −55°C

TJ = 25°C

0.06

0.07

0.08

0.09

5678910

VGS, GATE−TO−SOURCE VOLTAGE (V)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

Figure 3. On−Region versus Gate Voltage

ID = 17 A

TJ = 25°C

0.00

0.05

0.10

0.25

0.15

10 20812

TJ = 125°C

TJ = 175°C

VGS = 10 V

TJ = 25°C

TJ = −55°C

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.5

1.5

2.5

−50 −25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

RDS(on), DRAIN−TO−SOURCE RESISTANCE

(NORMALIZED)

ID = 17 A

VGS = 10 V

1000

10000

10 20 30 40 50 60 70 80 90 100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

IDSS, LEAKAGE (nA)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

TJ = 125°C

TJ = 150°C

VGS = 0 V

0.10

0.11

4.5 V

0.20

14 16 18

100

NTD6416AN, NVD6416AN

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TYPICAL CHARACTERISTICS

200

400

600

800

0 20406080100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

Figure 7. Capacitance Variation

TJ = 25°C

VGS = 0 V

Ciss

Coss

Crss 0

0 5 10 15 20

Qgd

Qgs

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source Voltage and

Drain−to−Source Voltage versus Total Charge

ID = 17 A

TJ = 25°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

100

1000

1 10 100

RG, GATE RESISTANCE (W)

t, TIME (ns)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

td(off)

td(on)

VDS = 80 V

ID = 17 A

VGS = 10 V

0.5 0.6 0.7 0.8 0.9 1.0

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

IS, SOURCE CURRENT (A)

TJ = 25°C

VGS = 0 V

0.1

100

1000

1 10 100 1000

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = 10 V

SINGLE PULSE

TC = 25°C

10 ms

100 ms

10 ms

1 ms

25 50 75 100 125 150 175

AVALANCHE ENERGY (mJ)

TJ, STARTING JUNCTION TEMPERATURE

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

ID = 17 A

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

VDS VGS

1000

1200

NTD6416AN, NVD6416AN

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TYPICAL CHARACTERISTICS

0.001

0.01

0.1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10

Figure 13. Thermal Response

t, PULSE TIME (s)

0.2

0.02

D = 0.5

0.05

0.01

SINGLE PULSE

0.1

R(t) (°C/W)

ORDERING INFORMATION

Device Package Shipping†

NTD6416ANT4G DPAK

(Pb−Free)

2500 / Tape & Reel

NTD6416AN−1G IPAK

(Pb−Free)

75 Units / Rail

NVD6416ANT4G DPAK

(Pb−Free)

2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.

NTD6416AN, NVD6416AN

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PACKAGE DIMENSIONS

DPAK (SINGLE GUAGE)

CASE 369AA−01

ISSUE B

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.030 0.045 0.76 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

12 3

5.80

0.228

2.58

0.102

1.60

0.063

6.20

0.244

3.00

0.118

6.17

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.108 REF 2.74 REF

L2 0.020 BSC 0.51 BSC

DETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

NTD6416AN, NVD6416AN

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PACKAGE DIMENSIONS

123

−T−

SEATING

PLANE

D3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.180 0.215 4.45 5.45

S0.025 0.040 0.63 1.01

V0.035 0.050 0.89 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z0.155 −−− 3.93 −−−

IPAK

CASE 369D−01

ISSUE C

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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NTD6416AN/D

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Phone: 81−3−5773−3850

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