MURA160T3G, SURA8160T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (1.05 V Max @ 1.0 A, TJ = 150C) AEC-Q101 Qualified and PPAP Capable SURA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb-Free* http://onsemi.com ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS SMA CASE 403D PLASTIC Mechanical Characteristics: Case: Epoxy, Molded Weight: 70 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead ESD Protection: Human Body Model > 4000 V (Class 3) Machine Model > 400 V (Class C) MARKING DIAGRAM U4J AYWW G U4J A Y WW G = = = = = Device Code Assembly Location Year Work Week Pb-Free Package ORDERING INFORMATION Package Shipping MURA160T3G SMA (Pb-Free) 5,000/Tape & Reel SURA8160T3G SMA (Pb-Free) 5,000/Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 6 1 Publication Order Number: MURA160T3/D MURA160T3G, SURA8160T3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 600 V Average Rectified Forward Current @ TL = 145C @ TL = 110C IF(AV) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature Range TJ 1.0 2.0 30 -65 to +175 A A C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Lead (TL = 25C) (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Symbol Max Unit PsiJL (Note 2) RqJA 24 C/W 216 1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR-4. 2. In compliance with JEDEC 51, these values (historically represented by RqJL) are now referenced as PsiJL. ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 3) (iF = 1.0 A, TJ = 25C) (iF = 1.0 A, TJ = 150C) vF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 150C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) trr 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 Max 1.25 1.05 5.0 150 75 Unit V mA ns MURA160T3G, SURA8160T3G IR, REVERSE CURRENT (mA) 10 TJ = 100C 1 0.1 0.01 IF, INSTANTANEOUS FORWARD CURRENT (A) 1000 TJ = 150C TJ = 25C 0 100 300 200 400 500 TJ = 25C 0 100 200 300 400 500 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Reverse Current Figure 2. Maximum Reverse Current 100C TC = 150C 25C 1 0.1 0.3 TJ = 100C 10 VR, REVERSE VOLTAGE (VOLTS) 10 0.01 TJ = 150C 100 1 600 0.5 0.7 0.9 1.1 1.3 1.5 1.7 IF, INSTANTANEOUS FORWARD CURRENT (A) IR, REVERSE CURRENT (mA) 100 10 TC = 150C 100C 25C 1 0.1 0.01 0.3 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 4. Maximum Forward Voltage Figure 3. Typical Forward Voltage http://onsemi.com 3 600 1.9 MURA160T3G, SURA8160T3G 30 C, CAPACITANCE (pF) 20 15 10 5 4 0 12 8 20 16 28 24 32 36 20 15 10 0 40 8 12 16 20 24 28 32 Figure 5. Typical Capacitance Figure 6. Maximum Capacitance dc 3 SQUARE WAVE 2 1 80 4 VR, REVERSE VOLTAGE (VOLTS) 4 60 0 VR, REVERSE VOLTAGE (VOLTS) 5 0 NOTE: MAXIMUM CAPACITANCE AT 0 V = 27 pF 25 5 IF(AV), AVERAGE FORWARD CURRENT (A) 0 IF(AV), AVERAGE FORWARD CURRENT (A) NOTE: TYPICAL CAPACITANCE AT 0 V = 24 pF 100 140 120 160 180 0.6 SQUARE WAVE 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 100 120 140 Figure 8. Current Derating, Ambient (FR-4 Board with Minimum Pad) dc SQUARE WAVE 2 1.5 1 0.5 0.5 80 TA, AMBIENT TEMPERATURE (C) 3.5 0 180 0.7 4 0 160 0.8 4.5 2.5 40 dc 0.9 Figure 7. Current Derating, Lead 3 36 1 TL, LEAD TEMPERATURE (C) PF, AVERAGE POWER DISSIPATION (W) C, CAPACITANCE (pF) 25 1 1.5 2 2.5 3 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Power Dissipation http://onsemi.com 4 3.5 MURA160T3G, SURA8160T3G PACKAGE DIMENSIONS SMA CASE 403D-02 ISSUE F HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D-01 OBSOLETE, NEW STANDARD IS 403D-02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.006 0.064 0.016 0.115 0.180 0.220 0.060 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L A1 c SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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