IRANSYS ELECTRONICS LIMITED BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS @ Designed for Complementary Use with the BD243 Series 65 W at 25C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available TO-220 PACKAGE (TOP VIEW) O Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD244 -55 . BD244A -70 Collector-emitter voltage (Rpg = 100 ) BD244B VceR 90 Vv BD244C -115 BD244 -45 . BD244A -60 Collector-emitter voltage (I> = -30 mA) BD244B VcEo 80 Vv BD244C -100 Emitter-base voltage VEBo 5 Vv Continuous collector current lo 6 A Peak collector current (see Note 1) lom -10 A Continuous base current lB 3 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 65 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Prot 2 WwW Unclamped inductive load energy (see Note 4) YoLIo? 62.5 mJ Operating junction temperature range Tj -65 to +150 C Storage temperature range Tstg -65 to +150 C Lead temperature 3.2 mm from case for 10 seconds TL 250 C NOTES: 1. This value applies for t, < 0.3 ms, duty cycle < 10%. Derate linearly to 150C case temperature at the rate of 0.52 W/C. 2. 3. Derate linearly to 150C free air temperature at the rate of 16 MW/C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, Ipjon) = -0.4 A, Rae = 100 , VBE(ott) =0, Rs = 0.1 Q, Voc =-20V.BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT BD244 -45 Vv Collector-emitter I.= -30mA le =0 BD244A -60 Vv (BR)CEO breakdown voltage c B BD244B -80 (see Note 5) BD244C -100 Vop= -55V Vee =0 BD244 -0.4 | Collector-emitter Vop = -70V Veg = 0 BD244A -0.4 mA CES cut-off current Veg = -90V Veg = 0 BD244B -0.4 Vop =-115 V Veg =0 BD244C -0.4 | Collector cut-off Veg= -30V lp =O BD244/244A -0.7 mA CEO current Voce = -60V Ip =0 BD244B/244C -0.7 leo Emitter cut-off Vep= BV Ie=0 4 mA current Forward current Vecpe= 4V Ic =-0.3A 30 Nee . (see Notes 5 and 6) transfer ratio Vecpe= 4V Ilc= -3A 15 Voeveat octor emitter Ip= 1A Io= -6A (see Notes 5 and 6) 415] V saturation voltage Vee paseremitter Voe= -4V Io= -6A (see Notes 5 and 6) 2 V voltage Small signal forward Ne . Vop = -10V Ip =-0.5A f=1kHz 20 current transfer ratio Small signal forward [Niel . Vop = -10V Ip =-0.5A f= 1 MHz 3 current transfer ratio NOTES: 5. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN | TYP | MAX | UNIT Rec Junction to case thermal resistance 1.92 C/W Roya Junction to free air thermal resistance 62.5 C/W resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS t MIN | TYP | MAX | UNIT ton Turn-on time Ic =-1A IBion) = -0.1A IBoott) =O.1A 0.3 us tott Turn-off time VeeE(otty = 3-7 V R_ =202 tp = 20 us, de < 2% 1 Us t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS - DC Current Gain Neg TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE vs vs COLLECTOR CURRENT BASE CURRENT TCS634AH TCS634AE 1000 -10 -300 mA -1A 3A 6A Vop =-4V Ty = 25C t, = 300 ps, duty cycle < 2% 100 -1-0 -0-1 Vee(eat - COllector-Emitter Saturation Voltage - V 1-0 -0-01 -0-1 -1-0 -10 -0-001 -0-01 -0-1 -1-0 -10 I, - Collector Current - A |, - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 4-2 TCS634AF Vog = -4V Ty = 25C | -1-1 > l 2 1-0 / 5 [ > 3 = 09 Ww 8 B og VA 2 WA Pat -0-7 LA ar -0-6 -0-1 -1-0 -10 |, - Collector Current - A Figure 3.BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA SAS634AD t, = 300 Us, d = 0.1 = 10% t,= 1ms,d=0.1 = 10% t, = 10ms,d=0.1 = 10% -100 10 DC Operation < 6 S& -10 3 9 oO 7 -0-1 BD244 BD244A BD244B BD244C -0-01 -1-0 -10 -100 -1000 Vog - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION VS CASE TEMPERATURE TIS633AB 80 70 = S 60 i N\ 3 50 N a : IN 40 \ E \ - 30 N x = 20 \ oF \ 10 N 0 0 25 50 75 100 125 150 T, - Case Temperature - C Figure 5.BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. T0220 470 4,20 3,96 < > 1,32 9371 2,95 123 L 2,54 see Note B 6,6 __. CD 4 60 15,90 14,55 see Note C _ 64 3,5 ee eel ph ____ v Kl 14,1 1,70 12,7 0,97 1,07 0,61 @) @) @) i u 2,74 0,64 2,34 0,41 5,28 2,90 4,88 2,40 VERSION 1 : VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.