UniFETTM FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description * 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. * Low gate charge ( typical 45 nC) * Low Crss ( typical 25 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. * Fast switching * 100% avalanche tested * Improved dv/dt capability D G G DS TO-220 TO-220F GD S FDP Series FDPF Series S Absolute Maximum Ratings Symbol Parameter FDPF18N50 / FDPF18N50T FDP18N50 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) 500 IDM Drain Current - Pulsed (Note 1) Unit V 18 10.8 18 * 10.8 * A A 72 72 * A 30 V 945 mJ VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds (TC = 25C) - Derate above 25C 4.5 235 1.88 V/ns 38.5 0.3 W W/C -55 to +150 C 300 C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP18N50 FDPF18N50 / FDPF18N50T Unit 0.53 3.3 C/W RJC Thermal Resistance, Junction-to-Case RCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W (c)2012 Fairchild Semiconductor Corporation FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1 1 www.fairchildsemi.com FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET July 2012 Device Marking Device Package Reel Size Tape Width Quantity FDP18N50 FDP18N50 TO-220 - - 50 FDPF18N50 FDPF18N50 TO-220F - - 50 FDPF18N50T FDPF18N50T TO-220F - - 50 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min. Typ. Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250A, Referenced to 25C -- 0.5 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125C --- --- 1 10 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.220 0.265 -- 25 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 9A gFS Forward Transconductance VDS = 40V, ID = 9A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 2200 2860 pF -- 330 430 pF -- 25 40 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250V, ID = 18A RG = 25 (Note 4, 5) VDS = 400V, ID = 18A VGS = 10V (Note 4, 5) -- 55 120 ns -- 165 340 ns -- 95 200 ns -- 90 190 ns -- 45 60 nC -- 12.5 -- nC -- 19 -- nC -- -- 18 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 18A -- -- 1.4 V trr Reverse Recovery Time 500 -- ns Reverse Recovery Charge VGS = 0V, IS = 18A dIF/dt =100A/s -- Qrr -- 5.4 -- C (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.2mH, IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 18A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1 2 www.fairchildsemi.com FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 Top : 1 10 ID, Drain Current [A] ID, Drain Current [A] 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 2 10 0 10 o 150 C 1 10 o 25 C o -55 C * Notes : 1. 250s Pulse Test -1 * Notes : 1. VDS = 40V 2. 250s Pulse Test o 10 2. TC = 25 C 0 -1 0 10 10 1 10 10 2 4 6 10 2 10 0.6 0.5 VGS = 10V 0.4 0.3 VGS = 20V 0.2 o 1 10 150oC o * Notes : 1. VGS = 0V 2. 250s Pulse Test 25 C * Note : TJ = 25 C 0.1 12 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 10 70 0.2 0.4 0.6 0.8 Figure 5. Capacitance Characteristics Coss Ciss 2000 1000 1.4 1.6 1.8 2.0 2.2 2.4 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 3000 1.2 Figure 6. Gate Charge Characteristics 5000 4000 1.0 VSD, Source-Drain voltage [V] ID, Drain Current [A] Capacitances [pF] 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] * Note : 1. VGS = 0 V 2. f = 1 MHz Crss 10 VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 * Note : ID = 18A 0 -1 10 0 10 0 1 10 VDS, Drain-Source Voltage [V] FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1 0 10 20 30 40 50 QG, Total Gate Charge [nC] 3 www.fairchildsemi.com FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250A 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 9 A 0.5 0.0 -100 200 o TJ, Junction Temperature [ C] -50 0 50 100 150 Figure 9-1. Maximum Safe Operating Area - FDP18N50 Figure 9-2. Maximum Safe Operating Area -FDPF18N50 / FDPF18N50T 2 2 10 10 10 s ID, Drain Current [A] ID, Drain Current [A] 10 s 100 s 1 ms 1 10 10 ms 100 ms DC Operation in This Area is Limited by R DS(on) 0 10 -1 100 s 1 10 1 ms 10 ms 100 ms Operation in This Area is Limited by R DS(on) 0 10 DC -1 * Notes : 10 * Notes : 10 o o 1. TC = 25 C 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse -2 10 200 o TJ, Junction Temperature [ C] -2 0 1 10 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Currentvs. Case Temperature 20 ID, Drain Current [A] 15 10 5 0 25 50 75 100 125 150 o TC, Case Temperature [ C] FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1 4 www.fairchildsemi.com FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Typical Performance Characteristics (Continued) FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve - FDP18N50 Z JC (t), Thermal Response 10 0 D = 0 .5 10 0 .2 -1 0 .1 PDM t1 0 .0 5 10 0 .0 2 0 .0 1 -2 * N o te s : o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) s in g le p u ls e 10 t2 1 . Z J C ( t) = 0 .5 3 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11-2. Transient Thermal Response Curve - FDPF18N50 / FDPF18N50T 0 0 .2 0 .1 0 .0 5 10 -1 PDM 0 .0 2 t1 0 .0 1 * N o te s : 1 . Z J C ( t) = 3 .3 JC (t), Thermal Response D = 0 .5 10 t2 o C /W M a x . Z 2 . D u ty F a c to r , D = t 1 /t 2 10 -2 10 3 . T J M - T C = P D M * Z J C ( t) s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1 5 www.fairchildsemi.com FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1 6 www.fairchildsemi.com FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1 7 www.fairchildsemi.com FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1 8 www.fairchildsemi.com 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1 9 www.fairchildsemi.com FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Mechanical Dimensions FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1 10 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1 11 www.fairchildsemi.com FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2CoolTM PowerTrench(R) F-PFSTM The Power Franchise(R) (R) AccuPowerTM PowerXSTM FRFET(R) Global Power ResourceSM AX-CAPTM* Programmable Active DroopTM (R) (R) BitSiC QFET Green BridgeTM TinyBoostTM Build it NowTM QSTM Green FPSTM TinyBuckTM CorePLUSTM Quiet SeriesTM Green FPSTM e-SeriesTM TinyCalcTM CorePOWERTM RapidConfigureTM GmaxTM TinyLogic(R) CROSSVOLTTM GTOTM TM TINYOPTOTM CTLTM IntelliMAXTM TinyPowerTM Current Transfer LogicTM Saving our world, 1mW/W/kW at a timeTM ISOPLANARTM TinyPWMTM DEUXPEED(R) Marking Small Speakers Sound Louder SignalWiseTM TinyWireTM Dual CoolTM and BetterTM SmartMaxTM TranSiC(R) EcoSPARK(R) MegaBuckTM SMART STARTTM TriFault DetectTM EfficentMaxTM MICROCOUPLERTM Solutions for Your SuccessTM TRUECURRENT(R)* ESBCTM MicroFETTM SPM(R) SerDesTM STEALTHTM MicroPakTM (R) SuperFET(R) MicroPak2TM (R) SuperSOTTM-3 MillerDriveTM Fairchild UHC(R) SuperSOTTM-6 MotionMaxTM Fairchild Semiconductor(R) Ultra FRFETTM SuperSOTTM-8 Motion-SPMTM FACT Quiet SeriesTM UniFETTM SupreMOS(R) mWSaverTM FACT(R) VCXTM SyncFETTM OptoHiTTM FAST(R) (R) VisualMaxTM Sync-LockTM OPTOLOGIC FastvCoreTM (R) VoltagePlusTM OPTOPLANAR (R)* FETBenchTM XSTM FlashWriter(R) * (R) FPSTM