De eee SEL CR ALORS EU ANILLO 8 (os Selection Guides Surface Mount Power MOSFETs Part aot Rgeage pare, Ip PS Part Vos 1 P, Number : eo et (A) (W) Remarks Number {V) (A) (W} 4 Powe + N-Channel N-Channel NDC831N 20 ae 4416 Single | NOTSSSN FDC6303N** 25 ~ fee | NOT453N ss 3 _ FDC630IN* 25 es : = 02 09 Dual | NOT45S1AN 30 NDCESIN 30 32 1.6 _ Single | NOT451N NDC7002N 50 me 0.51 0.96 Dual NDT3055 OU 7 oS NDT3055L P-Channel TNOTOI4L = NDC632P 20 . 2716 CNDTOI4 FOC6304P* _-25 wis 20.48 09 Dual TNDT410EL 100 | FDC6302P** 25 eee : eet NDCS52P_-30_ 24 16 _ Single P-Channel - _ NDC7003P 50 0.34 0.96 Dual NDT456P_ 7 15 3 | NDTA54P 58 3 -NDT452AP _ 5 3 0.68 09 N-Ch NDT452P 30 38 0.48 0.9 P-Ch NDT2955. C80 950 FDCRg22L* i ee 0.2 09 N-Ch a : Ee e048 0.9 P-Ch_ epce3zoc** 25 Pe 02 09 N-Ch - -25 cli as we 012 09 P-Ch NDC7001C 50 rere 951 0.96 N-Ch -50 : ee, -~0.34 0.96 P-Ch Part Vos 3 I P, Number (V)_ 5 = (A) (WW) Canfi N-Channel . . NDH833N 20). : 7.118 Single NDH83IN 20 58 18 NDH8303N* 20 : 38 08 Dual NDH8301N 20 _ ~ 3 08 Dual_ NDH853N* 30 ee: 76 18 le NDH843630_ ; ae 58 18 Single NDH8503N* 30 : Bes ; 38 08 Dual *Preliminary information; samples available; full production release pending NDH8501N 30 28 08 Dual reliability completion. **Advance information; please contact Discrete Power & Signal Technologies Marketing for updated information. P-Channel NDH@34P* -29__ : : 56 1.8 _ Single. NDH832P_-20 2 A2 18 Single NDH8304P* -20) foes ae = 227 08 Dual _ NDH8302P -20 : 2208 Dual NDH8Ss4P* -30 : Se S118 Single NOHB447 _-30 eee! __18 _ _ Single NDH8504P -30 : 2027 08 Dual NDH8502P -30 oe = 22 08 Dual N-P NOHB321ce 20 eS 38 08 N-Ch -20 : x t-27 0.8) P-Ch_ NoHs3z0c 20 Tans Te 3. 08 N-Ch _ -20 a BUS 8 2 08 P-Ch. NoHgs2tce 300 MB 388 0B Nh ~30 Soe ee 2.708 Ph NDHs520c (30 pe coer 28 08 N-Ch -30 ee oe 22 08 P-Ch