Features
1 of 6
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
SGA6386Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
The SGA6386Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
0
5
10
15
20
012345
Frequency (GHz)
Gain (dB)
-40
-30
-20
-10
0
Return Loss (dB)
GAIN
IRL
ORL
Gain & Return Loss vs. Frequency
VD= 4.9 V, ID= 80 mA (Typ.)
TL=+25ºC
Broadband Operation: DC to
5000MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
DS100915
Package: SOT-86
SGA6386ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 14.0 15.4 16.9 dB 850MHz
13.5 dB 1950MHz
12.5 dB 2400MHz
Output Power at 1dB Compression 21.0 dBm 850MHz
19.0 dBm 1950MHz
Output Third Intercept Point 36.0 dBm 850MHz
34.0 dBm 1950MHz
Bandwidth Determined by Return
Loss 5000 MHz >10dB
Input Return Loss 26.7 dB 1950MHz
Output Return Loss 16.2 dB 1950MHz
Noise Figure 4.0 dB 1950MHz
Device Operating Voltage 4.6 4.9 5.4 V
Device Operating Current 72 80 88 mA
Thermal Resistance
(Junction - Lead) 97 °C/W
Test Conditions: VS=8V, ID=80mA Typ., OIP3 Tone Spacing=1 MHz, POUT per tone=0dBm, RBIAS=39Ω, TL=25°C, ZS=ZL=50Ω
2 of 6 DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA6386Z
Typical Performance at Key Operating Frequencies
Absolute Maximum Ratings
Parameter Rating Unit
Max Device Current (ID)160mA
Max Device Voltage (VD)7V
Max RF Input Power +18 dBm
Max Junction Temp (TJ)+150°C
Operating Temp Range (TL) -40 to +85 °C
Max Storage Temp +150 °C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(T
J-TL)/RTH, j-l
Parameter Unit 100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
Small Signal Gain dB 15.9 15.5 15.4 13.5 12.5 10.7
Output Third Order Intercept Point dBm 37.1 37.1 36.0 34.0 32.2 27.9
Output Power at 1dB Compression dBm 20.2 20.5 21.0 19.0 18.6 16.3
Input Return Loss dB 23.8 23.9 25.6 26.7 20.4 16.0
Output Return Loss dB 13.2 14.5 16.6 16.2 15.1 14.2
Reverse Isolation dB 20.0 20.2 20.4 19.9 19.2 17.2
Noise Figure dB 3.7 3.4 3.6 4.0 4.2 4.6
Test Conditions: VS=8V, ID=80mA Typ., OIP3 Tone Spacing=1 MHz, POUT per tone=0 dBm, RBIAS=39Ω, TL=25°C, ZS=ZL=50Ω
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
20
24
28
32
36
40
0.00.51.01.52.02.53.03.5
Frequenc y ( GHz)
OIP3(dBm)
+25°C
-40°C
+85°C
OIP3 vs. Frequency
VD= 4.9 V, ID= 80 mA P1dB vs. Frequency
VD= 4.9 v, ID= 80 mA
12
14
16
18
20
22
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequenc y ( GHz)
P1dB(dBm)
+25°C
-40°C
+85°C
TLTL
Noise Figure vs. Frequency
VD= 4.9 V, ID= 80 mA
T
L
=+25ºC
2
3
4
5
6
7
01234
Frequency (G Hz)
Noise Figure (dB)
T
L
=+25ºC
3 of 6DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA6386Z
-30
-25
-20
-15
-10
012345
Frequency (G Hz)
|S12| (dB)
+25°C
-40°C
+85°C -40
-30
-20
-10
0
012345
Frequency (GHz)
|S22| (dB)
+25°C
-40°C
+85°C
0
5
10
15
20
012345
Frequency ( G Hz)
|S21| (dB)
+25°C
-40°C
+85°C
-40
-30
-20
-10
0
012345
Fre quency (GHz)
|S11| (dB)
+25°C
-40°C
+85°C
|S12| vs. Frequency
VD= 4.9 V, ID= 80 mA |S22| vs. Frequency
VD= 4.9 V, ID= 80 mA
TL
TL
TL
TL
|S11| vs. Frequency
VD= 4.9 V, ID= 80 mA
|S21| vs. Frequency
VD= 4.9 V, ID= 80 mA
* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.
VD vs. Temperature for Constant ID = 80 mA
VD vs. ID over Temperature for fixed
VS= 8 V, RBIAS= 39 ohms *
65
70
75
80
85
90
95
4.5 4.7 4.9 5.1 5.3
VD(Volts)
ID(mA)
+85°C
+25°C
-40°C
4.5
4.7
4.9
5.1
5.3
5.5
-40 -15 10 35 60 85
Temperature(°C)
VD(Volts)
4 of 6 DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA6386Z
Application Schematic
Evaluation Board Layout
Pin Function Description
1RF IN
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
2, 4 GND Connection to ground. For optimum RF performance use via holes as close to ground leads as possible to reduce lead
inductance.
3RF OUT/BIAS
RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for proper oper-
ation.
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B
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SAIB
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RF in RF out
1 uF
CB
CB
CD
VS
RBIAS
LC
1
2
3
4
1000
pF
SGA6386Z
1 uF
RBIAS
A63
1000 pF
C
B
C
B
C
D
L
C
V
S
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
5 of 6DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA6386Z
Suggested Pad Layout
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
6 of 6 DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA6386Z
Part Identification
Ordering Information
Ordering Code Description
SGA6386Z 13" Reel with 3000 pieces
SGA6386ZSQ Sample bag with 25 pieces
SGA6386ZSR 7” Reel with 100 pieces
SGA6386ZPCK1 850MHz, 8V Operation PCBA with 5-piece sample bag
63Z
