4N32/ 4N33 TEMIC Semiconductors Optocoupler with Photodarlington Output Description The 4N32 and 4N33 consist of a photodarlington opti- cally coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Galvanically separated circuits, non-interacting switches Features High isolation resistance High Current Transfer Ratio @ Low coupling capacity typical 0.3 pF Order Schematic 95 10532. Low temperature coefficient of CTR @ UL recognized; file No. E 76222 4N32/ 4N32S/ 4N33/ 4N33S > 500% Suffix: S = Waterproofed device Remarks Pin Connections A waterproof construction is recommended for couplers B Cc E where a pure water cleaning process is used instead of a standard-soldering/ cleaning process. In this case please order the part numbers with the suffix S. The waterproof construction corresponds with the coupling system S, and does not belong to the part number itself, Standard parts are marked with the letter A. This coupling system indicator A or S is in a separate (second) line of the marking. 95 10806 At CO n.c. 106 Mm 6920056 0018341 4oT TELEFUNKEN Semiconductors Rev. Al, 03-Jun-96TEMIC ~ 4N32/ 4N33 Absolute Maximum Ratings Input (Emitter) Reverse voltage Forward current Forward current < 10s Power dissipati Tamb & 25C Junction Output (Detector) Collector base vo Collector emitter vo Emitter collector Collector current Peak collector current = 0.5, ty S$ 10 ms Power $ 25C Junction Coupler Isolation test v 3.75 Total 250 Ambient 55 to +100 55 to +125 2mm from t<10s 260 1) Related to standard climate 23/50 DIN 50014 TELEFUNKEN Semiconductors 107 Rev. Al, 03-Jun-96 Mm 4920096 001634e 3464N32/ 4N33 TEMIC Electrical Characteristics Tamb = 25C Input (Emitter) Forward Breakdown Junction Output (Detector) Collector base Tc = 100 vA V(BR)CBO breakdown Collector emitter Ic=1mA V(BR)CEO breakdown Emitter collector Ic = 100 uA V(BR)ECO breakdown vo Collector dark current Veg = 10 V, Coupler 4 iv es rt ME Ey. Isolation test voltage f=50Hz,t=2s Vio (RMS) Isolation resistance Vio = 1000 V, Rio) 1012 Q 40% relative humidity Ic/IF Ir =10mA, CTR 5 Vcr =10V, tp/T = 0.01, tp = 0.3 ms Collector emitter Ip=8 mA, Ic=2mA VcEsat 1 Vv saturation voltage Cut-off frequency Ip=2 mA, Vcg= 10 V, fo 30 kHz R, = 100 Q Coupling capacitance f=1 MHz Cy 0.3 pF D Related to standard climate 23/50 DIN 50014 108 TELEFUNKEN Semiconductors M@ 892005 0018343 212 a Rev. Al, 03-Jun-96TEMIC Semiconductors 4N32/ 4N33 Switching Characteristics R, =50Q =001 t, = ims 95 10807 I proc ocn 50Q Vs=10V 4N32/ 4N32S8 50 40 50 4N33/ 4N33S 50 40 50 +10V I, =50mA; Adjusted through input amplitude Channel I Figure 1. Fest circuit Channel I Oscilloscope R, 21MQ C, = 20pF TELEFUNKEN Semiconductors Rev. AJ, 03-Jun-96 WB 89200956 00146344 155 109~4N32/ 4N33 TEMIC Semiconductors Typical Characteristics (Tamp = 25C, unless otherwise specified) 400 = & 300 3 & # Rows Device 5 200 t 2 Phototransistor & g & 100 | 5 IR-Diode Pa ! re 0 - a 30 60 90 120 150 95 10977 Tamb Ambient Temperature ( C ) Figure 2. Total Power Dissipation vs. Ambient Temperature 1000.0 < 100.0 [ E / Bi / E 100 5 ua 5 z E& 10 { a j 0.1 0 0.2 04 0.6 08 1.0 12 14 16 18 2.0 96 11862 Vp Forward Voltage ( V ) Figure 3. Forward Current vs. Forward Voltage 1.5 14 13 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30-20-10 0 10 20 30 40 50 60 70 80 Tamb Ambient Temperature ( C ) Vcr=l0V Ip=lmA CTR |, ~ Relative Current Transfer Ratio 96 11906 Figure 4. Rel. Current Transfer Ratio vs. Ambient Temperature Figure 5. Collector Dark Current vs. Ambient Temperature 10000 ith open Base ( nA) s 8 WIL 10 leso- Collector Dark Current, 25 50 75 100 95 10979 Tamb Ambient Temperature ( C ) Vop=l0v S = I,g- Collector Base Current ( mA ) o 2 0.601 10 95 10980 Ip Forward Current (mA ) Figure 6. Collector Base Current vs. Forward Current 100 ~ Vcg=l0V gt E 10 5 5 1 & 6 oO t OL 0.0L 0.1 1 10 106 95 10981 Tp - Forward Current (mA ) Figure 7. Collector Current vs, Forward Current 110 Mme 8920096 0016345. TELEFUNKEN Semiconductors Rey, Al, 03-Jun-96 055TEMIC 4N32/ 4N33 Typical Characteristics (Tamp = 25C, unless otherwise specified) 100 10000 ~ s < 2 = Z 1000 g wo * 5 Z 0 8 5 & 100 8 8 3 ] 5 8 S \ ! 10 YY 0.5mA E 0.1 1 0.1 1 10 100 0.1 L 10 100 95 10982 Veg Collector Emitter Voltage ( V ) 95 10984 Ip Forward Current (mA ) Figure 8. Collector Current vs. Collector Emitter Voltage Figure 10. Current Transfer Ratio vs. Forward Current > ~ 1.0 Se g | Oo S e O89 \ o ZS = . 2 a z% 08 eae or is Lee 2 Lae] va 3 100% pe mg 07 a 5 een | 8 CTR=50% i ; 0.6 i ov 1 fo <7 ! 4 a 05 Ll > 1 10 100 95 10983 I Collector Current (mA ) Figure 9. Collector Emitter Sat. Voltage vs. Collector Current TELEFUNKEN Semiconductors 111 Rev. Al, 03-Jun-96 Mm 659c00%b OOLS34b Tel mm4N32/ 4N33 TEMIC Dimensions in mm 8.6 7.82 8.4 7.42 t | 4 TF \ 2! i 49 | 2.45 43 4.5 i 41 | 0.35 1 1 1 0.25 uo 96 I p24 0.58 8.4 : | |. 0.48 4 6.4 6.2 sounding DIN 95 10931 specifications TELEFUNKEN Semiconductors 112 . MM 6920096 001834? 5b4 Rev. Al, 03-Jun-96