2N4501 IN436 of ONTBO5 Z2N100/ Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A --- --- --- 1 B 1.050 1.060 26. 67 26.92 across flats Cc --- 1.161 29.49 D 5.850 6.144 149.1 10 156.06 E 6.850 7.375 173.99 187.33 F 797 827 20.24 21.01 G .276 286 70! 7.26 H --- 948 --- 24.08 J 425 499 10.80 12.67 2 K .260 .280 6.60 7.1 Dia. M .500 -600 12.70 15.24 N .140 -150 3.56 3.81 P --- 295 --- 7.49 TO-209AC (TO-94) Note 1: 1/2-20 UNF3A Note 2: Full thread within 2 1/2 threads Microsemi Forward & Reverse Reverse Transient Catalog Number Repetitive Blocking Blocking 2N4361 100V 100V e High dv/dt200 V/usec. 2N4362 200V 200V N4363 400V 400V e 1600 Amperes surge current 2N1805 500V 500V e Low forward on-state voltage 2N4364 2N1806 600V 600V e Package conforming to TO209AC 2N1807 700V 700V outline 2N4365 800V 800V e Economical for general purpose phase 2N4366 1000V 1000V control applications 2N4367 1200V 1200V To specify dv/dt higher than 200V/usec., contact factory. Electrical Characteristics Max. RMS on-state current IT(RMS) 110 Amps Tc = g7C Max. average on-state cur. yay) 70 Amps Tc = 87C Max. peak on-state voltage VIM 1.6 Volts ITM = 220 A(peak) Max. holding current 1H 200 mA Max. peak one cycle surge current ITSM 1600 A Tce = 87C, 60 Hz Max. I2t capability for fusing I2 10,624A2S t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range Ty -65C to 125C Storage temperature range TSTG 65C to 150C Maximum thermal resistance Reuc 0.40C/W Junction to case Typical thermal resistance (greased) Recs 0.20C/W Case to sink Mounting torque 100-130 inch pounds Weight 3.6 ounces (102.0 grams) typical LAWRENCE 6 Lake Street awrence, MICFOSCIM| #6 sa" 04-24-07 Row FAX: (978) 689-0803 www.microsemi.com2N4501 2N4560/7 & 2N1609 2N180/ Switching Critical rate of rise of onstate current (note 1) di/dt 100A /usec. TJ = 125C Typical delay time (note 1) td 3.0 usec. 5 Typical circuit commuted turnoff time (note 2) tq 100 usec. TJ = 125C Note 1: 'TM = 50A, YD = VDRM. YGT = 12V open circuit, 20 ohm0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turnoff interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger VET 3.0V Ty = 25C Max. nontriggering gate voltage Ve 0.25V Ty = 125C Max. gate current to trigger | GT 100mA TJ = 25C Max. peak gate power PoM 15W Average gate power PG(AV) 3.0W tp = 10 usec. Max. peak gate current | GM 4,0A Max. peak gate voltage (forward) VGM 10V Max. peak gate voltage (reverse) Vem 5.0V Blocking Max. leakage current lDRM,! RRM 10mA Ty =125C & VDRM,VRRM Max. reverse leakage IRRM 100uA Ty =25C & VDRM,YRRM Critical rate of rise of offstate voltage dv/dt 200V /usec. Ty =125C 04-24-07 Rev. 1ZN4501 2N456/7 & 2N1d09 2N180/ Figure 1 Figure 3 Typical Forward OnState Characteristics Maximum Power Dissipation 1 2 105 8000 = 4 tho? 1180 6000 gop YY S 75 5 4000 1 YY 2 60 30 B y LW a Vy A Vy 30 Ge E 1000 E 15 800 x = 0 600 0 10 20 30 40 50 60 70 80 90 100 400 Average On-State Current Amperes o Figure 4 & 200 Transient Thermal Impedance & 0.7 ae) 100 3 3 80 O05 2g 0.4 Ss o 0. 40 2 Lr] 6 303 LL O oO | " SE 3 & Eo2 S 5 7 53, Lr] c . . g SEE = 10 3 8 #12 #16 20 24 28 32 36 -001 01 0.1 1.0 10 100 Instantaneous OnState Voltage Volts Time in Seconds Figure 2 Forward Current Derating 130 2 2 120 ~ 2 110 S SS ot + SSA & NX SK = 90 "| z = 80 E E 70 2 60 301] 6] 904] l1z0_|180 0 10 20 30 40 50 60 70 80 90 100 Average OnState Current Amperes 04-24-07 Rev. 1