MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor (lGB~ is cqackaged wfih a soft recovery ultra-fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage bloc~ng capability. Short circuit rated IGBTs are specifically suked for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics resuk in efficient operations at high frequencies. C* packaged IGBTs save space, reduce assembly time and cost. Industry Standard High Power TO-247 Package with Isolated Mounting Hole High Speed Eoff 160 @/A typical at 125C High Shoti Circuit CapabiliW - 10 @ minimum Sofi Recove~ Free Wheeling Diode is included in the package Robust High Voltage Termination e .+~:1 \.,,.. ,,. \** ff.:~t,,?.a?..ir:+ ,,,$? :!..? /,,>, ` .;l*> ,,,.... E L CASE 340~3, Style 4 TO-247AE Rstin@~~q?' ,~? -,..:' ,>,,x*\$... .. t?' .,.*!;,,.*.,+<. . $x,-+. $s<* Collector-Emitter Voltage Collector+ ate Voltage (RGE = 1.0 M@{, `w%%'t~' "' Gat*Emitter Voltage -- Continuo@" +:~''s"" ,,,,. Collector Current -- Contin~~us@'~C = 25C -- Coqti~\~@,& Tc = 90C -- R&~:t~ Pulsed Current(1) Total Power Dissip#~~~@ T&= 25C Derate above 2~t~Q::~c .,.<,, Operating ~d~$o?~e ~:k,, *I:,, Junction Temperature Range Short ,$~[~~w"stand Time (V@= ~% Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 Q) ::. ~", ~~@esistance \.`.)it) `.'.*t%:.\<. .,! ,,::,.. !~; -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient `Maximum Lead Temperature Mounting Torque, N2 for Soldering Purposes, 1/8 from case for 5 seconds Symbol Value Unit VCES 1200 Vdc VCGR 1200 Vdc VGE *20 Vdc IC25 Icgo iCM 20 12 40 Adc pQ 123 0.98 Watts W/"c TJ1 Tstg -55 to 150 "c tsc 10 ps ReJc RBJC RGJA 1.02 1.41 45 "cm TL 260 `c Apk 10 lbf~in (1 .13 N~m) or M3 screw I) Pulse width is limited by maximum junction temperature. ~s document contins information on a new product. Specifications and information are subject to change without notice. @Motorola, Inc. 1995 MO~OROLA @ ELECTRICAL CHARACTERISTICS (TJ = 25C unless othewise noted) Characteristic Symbol Min Typ Max 1200 -- -- 870 -- -- -- -- -- -- -- -- Unit OFF CHARACTERISTICS BVCES Collector-t@Emitter Breakdown Voltage (VGE = O Vdc, Ic = 250 LAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = O Vdc) (VCE = 1200 Vdc, VGE = O Vdc, TJ = 125C) ICES GateBody lGES Leakage Current (VGE = + 20 Vdc, VCE = O Vdc) ON CHARACTERISTICS VCE(on) (VGE = 15 Vdc, Ic = 5 Adc) (VGE = 15 Vdc, Ic = 10 Adc, TJ = 125C) (VGE = 15 Vdc, Ic = 10 Adc) Gate Threshold Voltaga (VCE = VGE, Ic = 1 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, Ic = 10 Adc) CHARACTERISTICS Input Capacitance (VCE = 25 Vdc, VGE = O Vdc, f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn4n Delay Time Rise Time Turn4ff Delay Time Fall Tme Turn~ff Switching Loss Turn-n Switching Loss Total Switching Turn-n Loss Delay Time Rise Time Turn~ff Delay Time (1) @dc *,\ *'X,l, ~~$~y.l:~;,: \ .>?. ~~ $'&&'t. 250 ,.}. ..* ,,,`. .:, ~., ..s,.,'~ $-~,, ,N':,,>,:,, \,:, , . .... ,.?i~ ,.,C< ~~ * Vdc -- -- 2.51 .. ,~$$p 2.36 +$: "$ - -- 341 "$:$'24.42 $ ~:e. Vdc vGE(th) mV/OC Mhos 9fe ... 4~$~: Qe + ` `">.. \ `~t+ -- c(~q: ~ _ Q;% 930 -- 126 -- -- 16 -- -- 80 -- -- 114 -- td(o~ -- 66 -- tf -- 2:32 Eoff -- 0.57 1.33 Eon -- 1.12 1.88 Ets -- 1.69 3.21 td(on) -- 74 -- tr -- 110 -- td(o~ -- 80 -- ?~~i Cre: ,,... ., ~. ~:~?,,.... ,#' .),. ~~ .,. ..: -..~..,, ,.,*,,..,\,:,; ,.$ td(on) (Vcc = 720 Vdc, IC = 10 Ad$$;*' tr VGE = 15 Vdc, L = 300 ~$ * RG = 20 Q, TJ =,@C) Energy losses i~$u~;tail" >,>,,~~'.+~,@ ,.U"~1..'~,~~:$ ):,%,,$C<:.:> " .. ,:" ,$.,. .+*. ~!\>\,,. -fl ` ` "rfii{,$*?.., ?~:b,, ~.,t,i\,,,,,!, ?$,., ~`?~:: w....~f \"$ ".:l: i:;\ ~+.,...>? h$,. `..':4..:~ ,., `,, ,iy ,,p$l' $~~ ~'~}.1~ J$ +b,&$&C = 720 Vdc, IC = 10 Adc, VGE = 15 Vdc, L = 300 pH RG = 20 Q, TJ = 125"C) Energy losses include "tail" ] -- tf -- 616 -- Turn~ff ,te Switching Lo@C*$%. <*8Y Eofi -- 1.60 -- Turn-n Switchifl&<$&&$ Eon -- 2.30 -- Ets -- 3.90 -- QT -- 31 -- Q1 -- 13 -- Q2 - 14 -- Fall Time .~~$ ,J.:t,, Total Switchiq,&~~.'Y ..:>:, Gate Cha~e @ ..~..,~.-~.,,.,,!.y .,~;>+ ?*, !,..~~ ..:~t., :-: `,..i.:~:,. ~ +*.. .$y,>e,...... ,., ,,. :!$,t.t~.. 4,,., ,-;l 2 (Vcc = 720 Vdc, IC = 10 Adc, VGE = 15 Vdc) mV/"C 100 2500 (1) ~ DYNAMIC Vdc Motorola IGBT pF ns 1 mJ ns mJ nC Device Data MGW12N120D ELECTRICAL CHARACTERISTICS -- continued (TJ = 25C unless othewise Characteristic noted) Min Typ Max -- -- -- 2.75 2.50 3.50 3.22 -- 4.18 trr -- 54 ta -- 30 tb -- 24 QRR -- trr -- ta -- Symbol Unit DIODE CHARACTERISTICS VFEC Diode Foward Voltage Drop (iEC = 5 Adc) (IEC = 5 Adc, TJ = 125C) (lEC = 10 Adc) Reverse Recove~ Time (IF =10 Adc, VR = 720 Vdc, dlF/dt = 200 ~PS) Reverse Recove~ Stored Charge Reverse Recovery Tme (IF =10 Adc, VR = 720 Vdc, dlF/dt = 200 WKS, TJ = 125C) Reverse Recove~ Stored Charge Motorola IGBT Device Data Vdc ,, .*?. .~. :*?td@ ~:,:. ~\ . ..,>. ~:,+' .1 ,++ +. ->& > ..:,,,,,: <>.,,,,. it.:~!'-kj. ..+*11., -- 61 +"'$' ; ":&& ,.... . :F~~;~, ,$ _ ,:. .,, ~c ns tb QRR &J~& 653 ,;!,~..l,*:,:+ ..),~~:" I ... .. -- WC 3 PACWGE DIMENSIONS -T- F E+ c NOTES 1. DIMENSIONING ANDTOLERANCING PERANSI Y14.5M, 1982, 2. CONTROLLING DIMENSION MILLIMETER. 4 7 r L J H L . ,. ,r''~$j ~;::., ,,.,~< ,.,,t\*y !,,... ,$~{ ,.-$.,f !.,>~'$'p,: 2. COLLECTOR 3. EMl~ER 4, COLLECTOR CASE 340F+3 TO-247AE ISSUE E ~~,}<@;] ~~~ "~$\&, ,<2{:: `"~;x,,, .,l,::+>,, ~ ,. .*:, ,.1>-,:>..,:...<,., , .,.?> .: .,:: ,, S$,<,. .>.. ,... ~$'i~~,.~ .`,P. .,?.y :~.,:...x,l,., .~$>>.,, .....\,.... ,,,,,. ~..;.:$: . `" :$.~.~ ~:$' *:.+. .~;.!>, ;>,,\`~..L\\' -,, .. ? . ,, w.. ~`<gi.w,.:>$t.,>..?:.il ~ P.,,, ~ *~l&+ ` -. `~v;:", ,x+', .*?~,> ~~.,+.y., ,\4\~,<:\ ,..,,> ,>%, ~)'l. , t:.>.t,r:.. , ~.. s..:,., )>s:,>,,. ,,* ,! :./:,`**..$>,:" .$+,\ `~t.."`t ~~i',,. %,,, b., Y ..~,, ,,,, ,, .! ,~.,, , ,., ,,:+ ,!. .:Y>:&+, .~., ::\.. ,;>'! :.{/.:$) :~s ~: *:J. ` /.\*,:*!.$\, ~$+, $tit~li~v ~j.:, \'ti'. \j,x \.~ ,E$.* ~itJ+!. .:4?* ~~'+. ,.* , ...-.3,, ., . t., ,.,}<~ `:$.~:<:~, ~~ .`*V,.:J ~ (:~, %,.' > .\,\t,t* .$,i, .,,,,. ."<!~$, Motorola reserv&.@&&ht to make changes without further notice to any products herein. Motorola makes no warranW, representation or9uarantee re9ar~n9 the suiWli@"~! it~~oducts for any particular pu~ose, nor does Motorola assume any hability arising out of the application or use of any product or circuit, and spe~~,~y ~claims any and all hability,including without limitation consequential or incidental damages. Typical" parameters can and do vary in different aPPli@o,&...M~oPeratin9 Parametem, inclu@n97YPicals" must ba vafidated for each customer application by customer's technical expefi. Motorola does not cow~tiy license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in ,,+. s~w,~lended for Sur9ical implant into the body, or other applications intended to support or sustain hfe, or for any other application in which the failure of the~fdrola product could create a situation where personal injury or death may occur. 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Box 2W1Z Phoenix, Arizona NW. 1-W1-2M7 MF~ RMFAXO @email.sps.mot.com -TOUCWONE INTERNET httpJ/Design-NET.com M-OROLA @ JAPAN: Nip@n Motorola Ltd; Tatsum.WPWLDC, ToshikatsuOtsuh, 6FSelbMutsu@ntar,>142 Tatsumi KotMu, Tokyo l=, Japan. 0~21+315 (602) 2%609 HONG KONG MotorolaSemiconductorsH.K. Ltd; 8B Tsi Ping Industial Park, 51 Tng Kok Road, Tti Po, N.T, Hong Kong. 852-2-298 ~ MGW12N120DID lllllllllllllllllllllllllllllllllllllllllllllllllllllllll 11111111111