MOTOROLA
SEMICONDUCTOR TECHNICAL DATA Order this document
by MGW12N120D/D
Product Preview Data Sheet
Insulated Gate BipoMarTransistor
with Anti-Parallel Diode
N-Channel Enhancement Mode Silicon Gate
Ttis Insulated Gate Bipolar Transistor (lGB~ is cqackaged wfih a
soft recovery ultra–fast rectifier and uses an advanced termination
scheme to provide an enhanced and reliable high voltage bloc~ng
capability. Short circuit rated IGBTs are specifically suked for applica-
tions requiring aguaranteed short circuit withstand time. Fast switching
characteristics resuk in efficient operations at high frequencies. C*
packaged IGBTs save space, reduce assembly time and cost.
e
●
●
●
●
Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
High Speed Eoff 160 @/A typical at 125°C
High Shoti Circuit CapabiliW – 10 @minimum
Sofi Recove~ Free Wheeling Diode is included in the package \**
.+~:1
\.,,.. ,,.
Robust High Voltage Termination ff.:~t,,?.a?..ir:+
,,,$?:!..?/,,>,‘.;l*>
,,,....
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CASE 340~3, Style 4
TO-247AE
Rstin@~~q?’,~? Symbol Value Unit
-,..:’
Collector–Emitter Voltage ,>,,x*\$..... t?’
.,.*!;,,.*.,+<.
.$x,-+.$s<*VCES 1200 Vdc
Collector+ ate Voltage (RGE =1.0 M@{, ‘w%%’t~’“’ VCGR 1200 Vdc
Gat*Emitter Voltage —Continuo@” +:~’’s”” VGE
,,,,. *20 Vdc
Collector Current —Contin~~us@’~C =25°C IC25 20 Adc
—Coqti~\~@,& Tc =90°C Icgo 12
—R&~:t~ Pulsed Current(1) iCM 40 Apk
Total Power Dissip#~~~@ T&= 25°C pQ 123 Watts
Derate above 2~t~Q::~c 0.98 W/”c
.,.<,,
Operating ~d~$o?~e Junction Temperature Range
~:k,,*I:,, TJ1Tstg –55 to 150 “c
Short ,$~[~~w”stand Time tsc 10
(V@= ~% Vdc, VGE =15 Vdc, TJ =125°C, RG =20 Q) ps
::.
~~@esistance —Junction to Case –IGBT
~“, ReJc 1.02 “cm
\.
‘.)it) —Junction to Case –Diode RBJC 1.41
‘.’.*t%:.\<.
.,!
,,::,.. —Junction to Ambient RGJA
!~; 45
‘Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5seconds TL 260 ‘c
Mounting Torque, N2 or M3 screw 10 lbf~in (1.13 N~m)
I) Pulse width is limited by maximum junction temperature.
~s document contins information on anew product. Specifications and information are subject to change without notice.
@MO~OROLA
@Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (TJ =25°C unless othewise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-t@Emitter Breakdown Voltage BVCES Vdc
(VGE =OVdc, Ic =250 LAdc) 1200 ——
Temperature Coefficient (Positive) —870 —mV/”C
Zero Gate Voltage Collector Current ICES @dc
(VCE =1200 Vdc, VGE =OVdc) —100
(VCE =1200 Vdc, VGE =OVdc, TJ =125°C)
—*,\
2500 *’X,l,
——~~$~y.l:~;,:
GateBody Leakage Current (VGE =+20 Vdc, VCE =OVdc) \.>?. ~~
lGES ——250 $’&&’t.
,.}. ..* ,,,‘.
ON CHARACTERISTICS (1) .:, ~.,
..s,.,’~$-~,,
,N’:,,>,:,,\,:,
~*
VCE(on) , ......
,.?i~ Vdc
(VGE =15 Vdc, Ic =5Adc)
,.,C<~~
—2.51 .. ,~$$p
(VGE =15 Vdc, Ic =10 Adc, TJ =125°C) —2.36 +$: “$ -
(VGE =15 Vdc, Ic =10 Adc) —341 “$:$’24.42
Gate Threshold Voltaga $~:e.
vGE(th)
(VCE =VGE, Ic =1mAdc) Vdc
Threshold Temperature Coefficient (Negative) mV/OC
Forward Transconductance (VCE =10 Vdc, Ic =10 Adc) 9fe Mhos
DYNAMIC CHARACTERISTICS 4~$~:Qe
Input Capacitance ...
c(~q: ~—
+‘‘“>..\‘~t+ 930 —pF
Output Capacitance (VCE =25 Vdc, VGE =OVdc,
f=1.0 MHz) Q;% _126 —
Transfer Capacitance ?~~i Cre: —16 —
,,... .,
32 ]—1
SWITCHING CHARACTERISTICS (1) ~.~:~?,,....~~
,#’ .),.
.,. ..:
Turn4n Delay Time -..~..,,
,.,*,,..,\,:,;,.$ td(on) —
(Vcc =720 Vdc, IC =10 Ad$$;*’ 80 —ns
Rise Time VGE =15 Vdc, L=300 ~$ *tr —114 —
Turn4ff Delay Time RG =20 Q, TJ =,@C) td(o~ —
Energy losses i~$u~;tail” 66 —
Fall Tme >,>,,~~’.+~,@ tf —2:
“~1..’~,~~:$,,$C<:.:>
,.U ):,%
Turn~ff Switching Loss “.. .+*.
,:” ,$.,.
~!\>\,,. -fl‘Eoff —0.57 1.33 mJ
‘“rfii{,$*?..,
Turn-n Switching Loss ?~:b,,
~.,t,i\,,,,,!,?$,., Eon —1.12 1.88
~‘?~::w....~f\“$
Total Switching Loss i:;\ ...>?
“.:l: ~+.,
‘..’:4..:~
h$,. ,., Ets —1.69 3.21
Turn-n Delay Time $~~‘,, ,iy
,,p$l’
J$ ~’~}.1~ td(on) —74 —
+b,&$&C =720 Vdc, IC =10 Adc, ns
Rise Time VGE =15 Vdc, L=300 pH tr —110 —
Turn~ff Delay Time RG =20 Q, TJ =125”C)
Energy losses include “tail” td(o~ —80 —
Fall Time tf —616 —
Turn~ff Switching Lo@ $%. ,te
.~~$,J.:t,,
C* <*8Y Eofi —1.60 —mJ
Turn-n Switchifl&<$&&$ Eon —2.30 —
Total Switchiq,&~~.’Y Ets —3.90 —
Gate Cha~e @..:>:,
..~..,~.-
~.,,.,,!.y QT —31 —nC
.,~;>+?*, !,..- (Vcc =720 Vdc, IC =10 Adc,
~~..:~t.,:-:‘,..i.:~:,.~Q1
+*.. VGE =15 Vdc) —13 —
......
.$y,>e, ,.,
,,. :!$,t.t~..
4,,., Q2 –14 —
,-;l
2Motorola IGBT Device Data
MGW12N120D
ELECTRICAL CHARACTERISTICS —continued (TJ=25°C unless othewise noted)
Characteristic Symbol Min Typ Max Unit
DIODE CHARACTERISTICS
Diode Foward Voltage Drop VFEC Vdc
(iEC =5Adc) —2.75 3.22
(IEC =5Adc, TJ =125°C) —2.50 —
(lEC =10 Adc) —3.50 4.18 ,,
Reverse Recove~ Time trr —54 —.*?.
.~.:*?td@
~:,:.
~:,+’~\ ....,>.
(IF =10 Adc, VR =720 Vdc, ta —30 .1+.
->& ,++
dlF/dt =200 ~PS) tb 24 ..:,,,,,:
>
<>.,,,,.
—.:~!’-kj.
it ..+*11.,
Reverse Recove~ Stored Charge QRR —61 +“’$’ ;“:&& ~c
Reverse Recovery Tme ,......
trr —:F~~;~, ,$ _ns
,:. .,,
(IF =10 Adc, VR =720 Vdc, ta —
dlF/dt =200 WKS, TJ =125°C) tb
Reverse Recove~ Stored Charge QRR &J~&
,;!,~..l,*:,:+..),~~:”
I653 —WC
... ..
Motorola IGBT Device Data 3
PACWGE DIMENSIONS
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Motorolareserv&.@&&ht tomake changes withoutfurther notice to any products herein. Motorola makes no warranW, representation or9uarantee re9ar~n9
the suiWli@”~! it~~oducts for any particular pu~ose, nor does Motorola assume any habilityarising out of the application or use of any product or circuit,
and spe~~,~y ~claims any and all hability,including withoutlimitationconsequential orincidental damages. Typical” parameters can and dovary indifferent
aPPli@o,&...M~oPeratin9 Parametem, inclu@n97YPicals” must ba vafidated for each customer application by customer’s technical expefi. Motorola does
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,,+.
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@M-OROLA ~MGW12N120DID
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