EMZ1 / UMZ1N / IMZ1A
Transistors
Rev.A 1/4
General purpose transistor
(dual transistors)
EMZ1 / UMZ1N / IMZ1A
zFeatures
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) T ransistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
NPN / PNP epit axial planar silicon transistor
zEquiva lent circuit
EMZ1 / UMZ1N IMZ1A
(3) (2) (1)
(4) (6)(5)
Tr
2
Tr
1
(3) (2) (1)
(4) (6)(5)
Tr
2
Tr
1
zA bsolute maximum ratings (Ta = 25°C)
Parameter Symbol Limits
Tr
1
Tr
2
Unit
VCBO 60 V
50 V
V
VCEO
VEBO 7
ICmA150
−60
−50
−6
−150
Tj 150 ˚C
Tstg −55 to +150 ˚C
PC
EMZ1, UMZ1N 150 (TOTAL) mW
IMZ1A 300 (TOTAL)
∗1
∗2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power
dissipation
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
zExternal dimensions (Unit : mm)
ROHM : EMT6
EMZ1
ROHM : UMT6
EIAJ : SC-88
UMZ1N
Abbreviated symbol : Z1
Abbreviated symbol : Z1
Abbreviated symbol : Z1
ROHM : SMT6
EIAJ : SC-74
IMZ1A
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
0to0.1
(6)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
(1)
0.65
(4)
(3)
(2)
(5)
(6)
(5)
(4)
0.3to0.6
0.15 0.3
1.1
0.8
0to0.1
(3)
2.8
1.6
1.9
2.9
0.95
(2)
0.95
(1)
0.22
1.2
1.6
(1)
(2)(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
EMZ1 / UMZ1N / IMZ1A
Transistors
Rev.A 2/4
zElectrical characteristics (Ta = 25°C)
Tr1 (NPN)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
Cob
Min.
60
50
7
−
−
120
−
−
−
−
−
−
−
−
−
2
−
−
−
0.1
0.1
560
0.4
3.5
VI
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
60V
V
EB
=7
V
V
CE
=
6V, I
C
=
1mA
I
C
/I
B
=
50mA/5mA
V
V
µA
µA
−
V
PF
Typ. Max. Unit Conditions
f
T
−180 −V
CE
=
12V, I
E
=−
2mA, f
=
100MHz
V
CB
=
12V, I
E
=
0A, f
=
1MHz
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
Tr2 (PNP)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
Cob
Min.
−60
−50
−6
−
−
120
−
−
−
−
−
−
−
−
−
4
−
−
−
−0.1
−0.1
560
−0.5
5
VI
C
=
−50µA
I
C
=
−1mA
I
E
=
−50µA
V
CB
=
−60V
V
EB
=
−
6
V
V
CE
=
−6V, I
C
=
−1mA
I
C
/I
B
=
−50mA/−5mA
V
V
µA
µA
−
V
PF
Typ. Max. Unit Conditions
f
T
−140 −V
CE
=
−12V, I
E
=
2mA, f
=
100MHz
V
CB
=
−12V, I
E
=
0A, f
=
1MHz
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
zPackaging specifications
Package
Code TR T108
3000 3000
Taping
Basic ordering
unit (pieces)
UMZ1N
T2R
8000
EMZ1
IMZ1A
Type
zElectrical characteristic curves
Tr1 (NPN)
0
0.1
0.2
0.5
2
20
50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
5
10
Ta=100˚C
V
CE
=
6V
25˚C
−55˚C
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
0
20
40
60
80
100
0.4 0.8 1.2 1.6 2.00
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25˚C
I
B
=0A
0.40mA
0.50mA
0.45mA
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics ( I )
0
0
2
8
10
4 8 12 16
4
6
20
I
B
=0A
Ta=25˚C
3µA
6µA
9µA
12µA
15µA
18µA
21µA
24µA
27µA
30µA
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.3 Grounded emitter output
characteristics ( II )
EMZ1 / UMZ1N / IMZ1A
Transistors
Rev.A 3/4
0.2
20
10 0.5 1 2 5 10 20 50 100 200
50
100
200
500
V
CE
=5V
3V
1V
Ta=25˚C
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
0.2 0.5 1 2 5 10 20 50 100 200
20
10
50
100
200
500
25˚C
−55˚C
Ta=100˚C VCE
=5V
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs. collector
current ( II )
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
I
C
/I
B
=50
20
10
Ta=25˚C
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( I )
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
I
C
/I
B
=10
Ta=100˚C
25˚C
−55˚C
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( II )
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100
I
C
/I
B
=50
Ta=100˚C
25˚C
−55˚C
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.8 Collector-emitter saturation
voltage vs. collector current ( III )
50
−0.5 −1−2−5−10 −20 −50 −100
100
200
500
Ta=25˚C
V
CE
=6V
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.9 Gain bandwidth product vs.
emitter current
0.2 0.5 1 2 5 10 20 50
1
2
5
10
20
Cib
Cob
COLLECTOR TO BASE VOLTAGE : VCB
(V)
EMITTER TO BASE VOLTAGE
: VEB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25˚C
f=1MHz
IE
=0A
IC
=0A
−0.2 −0.5 −1−2−5−10
10
20
50
100
200
EMITTER CURRENT : I
E
(mA)
Fig.11 Base-collector time constant vs.
emitter current
BASE COLLECTOR TIME CONSTANT : Cc r
bb'
(ps)
Ta=25
˚C
f=32MH
Z
V
CB
=6V
EMZ1 / UMZ1N / IMZ1A
Transistors
Rev.A 4/4
Tr2 (PNP)
−0.2
COLLECTOR CURRENT : Ic
(mA)
−50
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
V
CE
=
−
6V
BASE TO EMITTER VOLTAGE : V
BE
(V)
Ta=100˚C
25˚C
−
40˚C
Fig.12 Grounded emitter propagation
characteristics
−0.4
−4
−8
−1.20
−2
−6
−10
−0.8 −1.6 −2.0
−3.5µA
−7.0
−10.5
−14.0
−17.5
−21.0
−24.5
−28.0
−31.5
IB=0
Ta=25˚C
−35.0
COLLECTOR CURRENT : IC
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.13 Grounded emitter output
characteristics ( I )
−40
−80
−5−3−4−2−1
−20
−60
−100
0
IB=0
Ta=25˚C
−50µA
−100
−150
−200
−250
−500
−450
−400
−350
−300
COLLECTOR CURRENT : IC
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.14 Grounded emitter output
characteristics ( II )
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
Fig.15 DC current gain vs. collector
current ( I )
500
200
100
50
−0.2 −0.5 −1−2−5−10 −20 −50 −100
Ta=25˚C VCE=−5V
−3V
−1V
500
200
100
50
−0.2 −0.5 −1−2−5−10 −20 −50 −100
VCE=−6V
Ta=100˚C
−40˚C
25˚C
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC
(mA)
Fig.16 DC current gain vs. collector
current ( II )
−0.1
−0.2 −0.5 −1−2−5−10 −20 −50 −100
−1
−0.5
−0.2
−0.05
Ta=25˚C
IC/IB=50
20
10
COLLECTOR CURRENT : IC
(mA)
COLLECTOR SATURATION VOLTAGE : VCE (sat)
(
V)
Fig.17 Collector-emitter saturation
voltage vs. collector current ( I )
−0.1
−0.2 −0.5 −1−2−5−10 −20 −50 −100
−1
−0.5
−0.2
−0.05
l
C
/l
B
=10
Ta=100˚C
25˚C
−40˚C
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.18 Collector-emitter saturation
voltage vs. collector current ( II )
50 1000.5 20
50
100
200
500
1000
12 510
Ta=25˚C
V
CE
=−
12V
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.19 Gain bandwidth product vs.
emitter current
-0.5 -20
2
5
10
-1 -2 -5 -10
20
Cib
Cob
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
Fig.20 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25˚C
f=1MHz
I
E=0A
I
C=0A
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
