NTMFS4C028N MOSFET - Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 4.73 mW @ 10 V 30 V 52 A 7.0 mW @ 4.5 V Applications * CPU Power Delivery * DC-DC Converters D (5-8) MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit G (4) Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V S (1,2,3) ID 16.4 A N-CHANNEL MOSFET Continuous Drain Current RqJA (Note 1) TA = 25C Power Dissipation RqJA (Note 1) TA = 25C PD 2.51 W Continuous Drain Current RqJA 10 s (Note 1) TA = 25C ID 25.3 A Power Dissipation RqJA 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 80C 12.3 TA = 80C TA = 25C Steady State TA = 25C PD ID TA = 80C 6.0 W 1 9.0 A 6.8 TA = 25C PD 0.76 W Continuous Drain Current RqJC (Note 1) TC = 25C ID 52 A Power Dissipation RqJC (Note 1) TC = 25C PD 25.5 W TA = 25C, tp = 10 ms IDM 146 A IDmax 80 A TJ, TSTG -55 to +150 C IS 23 A Drain to Source dV/dt dV/dt 7.0 V/ns Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VGS = 10 V, IL = 29 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 42 mJ TL 260 C TC =80C Current Limited by Package TA = 25C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) D S SO-8 FLAT LEAD S CASE 488AA S STYLE 1 G 19.0 Power Dissipation RqJA (Note 2) Pulsed Drain Current MARKING DIAGRAMS D 4C028 AYWZZ D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION 39 Package Shipping NTMFS4C028NT1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NTMFS4C028NT3G SO-8 FL (Pb-Free) 5000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (c) Semiconductor Components Industries, LLC, 2016 May, 2019 - Rev. 1 1 Publication Order Number: NTMFS4C028N/D NTMFS4C028N 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. 3. Parts are 100% tested at TJ = 25C, VGS = 10 V, IL = 20 Apk, EAS = 20 mJ. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Junction-to-Case (Drain) RqJC 4.9 Junction-to-Ambient - Steady State (Note 4) RqJA 49.8 Junction-to-Ambient - Steady State (Note 5) RqJA 164.6 Junction-to-Ambient - (t 10 s) (Note 4) RqJA 21.0 Unit C/W 4. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 5. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 8.4 A, Tcase = 25C, ttransient = 100 ns 34 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V V 14.4 VGS = 0 V, VDS = 24 V mV/C TJ = 25C 1.0 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.1 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance 1.3 VGS(TH)/TJ RDS(on) 4.8 mV/C VGS = 10 V ID = 30 A 3.9 4.73 VGS = 4.5 V ID = 18 A 5.8 7.0 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A Gate Resistance RG TA = 25C 50 0.3 1.0 mW S 2.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 1252 VGS = 0 V, f = 1 MHz, VDS = 15 V 610 VGS = 0 V, VDS = 15 V, f = 1 MHz 0.101 CRSS 126 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 10.9 Threshold Gate Charge QG(TH) 1.9 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Gate Plateau Voltage Total Gate Charge pF VGS = 4.5 V, VDS = 15 V; ID = 30 A 3.4 nC 5.4 VGP QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 3.1 V 22.2 nC NTMFS4C028N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 10 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 32 tf 6.0 td(ON) 7.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf ns 16 28 ns 20 4.0 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.79 TJ = 125C 0.65 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 31 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 15 16 15 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 ns nC NTMFS4C028N TYPICAL CHARACTERISTICS 4.5 V to 10 V TJ = 25C 80 90 3.8 V 70 3.6 V 60 3.4 V 50 40 3.2 V 30 3.0 V 20 2.8 V VGS = 2.6 V 10 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 100 4.0 V 0 1 2 3 4 60 50 40 30 20 TJ = 125C TJ = -55C TJ = 25C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ID = 30 A 0.018 0.016 0.014 0.012 0.010 4 5 6 7 8 9 10 0.009 0.008 TJ = 25C VGS = 4.5 V 0.007 0.006 0.005 VGS = 10 V 0.004 0.003 10 20 30 40 50 60 70 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1600 1.7 1.6 1.5 VGS = 10 V ID = 30 A 1400 C, CAPACITANCE (pF) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE (W) 70 0 5 0.020 3 80 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.026 0.024 0.022 0.008 0.006 0.004 0.002 VDS = 5 V 10 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 90 ID, DRAIN CURRENT (A) 100 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 1200 1000 Coss 800 600 400 Crss 200 -25 0 25 50 75 100 125 150 VGS = 0 V TJ = 25C Ciss 0 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation www.onsemi.com 4 30 NTMFS4C028N 1000 10 VGS = 10 V VDD = 15 V ID = 15 A QT 8 t, TIME (ns) VGS, GATE-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 6 QGD QGS 4 VGS = 10 V VDD = 15 V ID = 30 A TJ = 25C 2 0 0 2 4 6 8 10 12 14 16 18 1 100 RG, GATE RESISTANCE (W) 1000 0 V < VGS < 10 V VGS = 0 V ID, DRAIN CURRENT (A) 16 14 TJ = 25C TJ = 125C 12 10 8 6 4 0.4 0.5 0.6 0.7 0.8 0.9 100 10 ms 100 ms 10 1 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 1.0 0.01 0.1 dc 1 10 100 VSD, SOURCE-TO-DRAIN VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Maximum Rated Forward Biased Safe Operating Area 80 20 18 ID = 20 A 70 16 60 14 12 10 8 6 50 40 30 20 4 2 0 10 Figure 8. Resistive Switching Time Variation vs. Gate Resistance GFS (S) IS, SOURCE CURRENT (A) td(on) QG, TOTAL GATE CHARGE (nC) 18 EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) 10 Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 20 2 0 td(off) tf tr 1 22 24 20 100 10 25 50 75 100 125 150 0 0 5 10 15 20 25 30 35 TJ, STARTING JUNCTION TEMPERATURE (C) ID (A) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature Figure 12. GFS vs. ID www.onsemi.com 5 40 45 50 NTMFS4C028N TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 100 10 1 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 PULSE WIDTH (sec) Figure 13. Avalanche Characteristics 100 Duty Cycle = 0.5 R(t) (C/W) 10 1 0.2 0.1 0.05 0.02 0.01 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 PULSE TIME (sec) Figure 14. Thermal Response www.onsemi.com 6 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO-8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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