INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
AUIRGP4062D
AUIRGP4062D-E
1www.irf.com
12/14/11
E
G
n-channel
C
VCES = 600V
IC = 24A, TC = 100°C
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.60V
G
C
E
Gate Collector Emitter
TO-247AC
AUIRGP4062D
Features
•Low VCE (on) Trench IGBT Technology
•Low Switching Losses
•5μs SCSOA
•Square RBSOA
•100% of The Parts Tested for ILM
•Positive VCE (on) Temperature Coefficient.
•Ultra Fast Soft Recovery Co-pak Diode
•Tighter Distribution of Parameters
•Lead-Free, RoHS Compliant
•Automotive Qualified *
Benefits
•High Efficiency in a Wide Range of Applications
•Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
•Rugged Transient Performance for Increased Reliability
•Excellent Current Sharing in Parallel Operation
•Low EMI
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified
*Qualification standards can be found at http://www.irf.com/
GCE
CC
TO-247AD
AUIRGP4062D-E
GC
E
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 48
I
C
@ T
C
= 100°C Continuous Collector Current 24
I
CM
Pulse Collector Current, V
GE
= 15V 72
I
LM
Clamped Inductive Load Current, V
GE
= 20V
c
96 A
I
F
@ T
C
= 25°C Diode Continous Forward Current 48
I
F
@ T
C
= 100°C Diode Continous Forward Current 24
I
FM
Diode Maximum Forward Current
e
96
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 250 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 125
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247 ––– ––– 0.65 °C/W
R
θ
JC
(Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247 ––– ––– 1.62
R
θ
Thermal Resistance, Case-to-Sink (flat, greased surface)-TO-247 0.24
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)- TO-247 –––40–––
PD - 96353A
2www.irf.com
AUIRGP4062D/P4062D-E
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 10Ω.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600——V
VGE = 0V, IC = 100μA
f
CT6
ΔV(BR)CES/ΔTJTemperature Coeff. of Breakdown Voltage —0.30—V/°C
VGE = 0V, IC = 1mA (25°C-175°C) CT6
—1.601.95 IC = 24A, VGE = 15V, TJ = 25°C 5,6,7
VCE(on) Collector-to-Emitter Saturation Voltage — 2.03 — V IC = 24A, VGE = 15V, TJ = 150°C 9,10,11
—2.04— IC = 24A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 700μA9, 10,
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12
gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A, PW = 80μs
ICES Collector-to-Emitter Leakage Current — 2.0 25 μAVGE = 0V, VCE = 600V
—775— VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.80 2.6 V IF = 24A 8
—1.28— IF = 24A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Ref.Fig
QgTotal Gate Charge (turn-on) — 50 75 IC = 24A 24
Qge Gate-to-Emitter Charge (turn-on) — 13 20 nC VGE = 15V CT1
Qgc Gate-to-Collector Charge (turn-on) — 21 31 VCC = 400V
Eon Turn-On Switching Loss — 115 201 IC = 24A, VCC = 400V, VGE = 15V CT4
Eoff Turn-Off Switching Loss — 600 700 μJRG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C
Etotal Total Switching Loss — 715 901 Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 41 53 IC = 24A, VCC = 400V, VGE = 15V CT4
trRise time — 22 31 ns RG = 10
Ω
, L = 200μH, LS = 150nH, TJ = 25°C
td(off) Turn-Off delay time — 104 115
tfFall time — 29 41
Eon Turn-On Switching Loss — 420 — IC = 24A, VCC = 400V, VGE=15V 13, 15
Eoff Turn-Off Switching Loss — 840 — μJRG=10
Ω
, L= 200μH, LS=150nH, TJ = 175°C
f
CT4
Etotal Total Switching Loss — 1260 — Energy losses include tail & diode reverse recovery WF1, WF2
td(on) Turn-On delay time — 40 — IC = 24A, VCC = 400V, VGE = 15V 14, 16
trRise time — 24 — ns RG = 10Ω, L = 200μH, LS = 150nH CT4
td(off) Turn-Off delay time — 125 — TJ = 175°C WF1
tfFall time — 39 — WF2
Cies Input Capacitance — 1490 — pF VGE = 0V 23
Coes Output Capacitance — 129 — VCC = 30V
Cres Reverse Transfer Capacitance — 45 — f = 1.0Mhz
TJ = 175°C, IC = 96A 4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2
Rg = 10Ω, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μsVCC = 400V, Vp =600V 22, CT3
Rg = 10Ω, VGE = +15V to 0V WF4
Erec Reverse Recovery Energy of the Diode — 621 — μJTJ = 175°C 17, 18, 19
trr Diode Reverse Recovery Time — 89 — ns VCC = 400V, IF = 24A 20, 21
Irr Peak Reverse Recovery Current — 37 — A VGE = 15V, Rg = 10
Ω
, L =200μH, Ls = 150nH WF3
Conditions
AUIRGP4062D/P4062D-E
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Qualification Information
†
3L-TO-247AC
3L-TO-247AD
RoHS Compliant Yes
ESD
Machine Model Class M4(+/- 400V )
†††
(per AEC-Q101-002)
Human Body Model Class H1C(+/- 2000V )
†††
(per AEC-Q101-001)
Charged Device Model Class C5(+/- 1000V )
†††
(per AEC-Q101-005)
Moisture Sensitivity Level N/A
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
4www.irf.com
AUIRGP4062D/P4062D-E
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
020 40 60 80 100 120 140 160 180
TC (°C)
0
5
10
15
20
25
30
35
40
45
50
IC (A)
0 20 40 60 80 100 120 140 160 180
TC (°C)
0
50
100
150
200
250
300
Ptot (W)
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
0 1 2 3 4 5 6 7 8
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 1 2 3 4 5 6 7 8
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
1msec
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
AUIRGP4062D/P4062D-E
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Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0
VF (V)
0
20
40
60
80
100
120
IF (A)
-40°c
25°C
175°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
0 5 10 15
VGE (V)
0
20
40
60
80
100
120
ICE (A)
TJ = 25°C
TJ = 175°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
6www.irf.com
AUIRGP4062D/P4062D-E
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
0 102030405060
IC (A)
0
200
400
600
800
1000
1200
1400
1600
1800
Energy (μJ)
EOFF
EON
10 20 30 40 50
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
025 50 75 100 125
RG (Ω)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
010 20 30 40 50 60
IF (A)
10
15
20
25
30
35
40
IRR (A)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
025 50 75 100 125
RG (Ω)
5
10
15
20
25
30
35
40
45
IRR (A)
0 25 50 75 100 125
Rg (Ω)
0
200
400
600
800
1000
1200
1400
1600
Energy (μJ)
E
OFF
EON
AUIRGP4062D/P4062D-E
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Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 24A; L = 600μH
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
0500 1000 1500
diF /dt (A/μs)
5
10
15
20
25
30
35
40
45
IRR (A)
010 20 30 40 50 60
IF (A)
0
200
400
600
800
1000
Energy (μJ)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
8 1012141618
VGE (V)
4
6
8
10
12
14
16
Time (μs)
40
80
120
160
200
240
280
Current (A)
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
= 300V
VCES
= 400V
0 500 1000 1500
diF /dt (A/μs)
500
1000
1500
2000
2500
3000
3500
4000
QRR (nC)
10Ω
22Ω
100Ω
47Ω
24A
48A
12A
8www.irf.com
AUIRGP4062D/P4062D-E
Fig. 28. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247AC
Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.2782 0.000311
0.3715 0.006347
τJ
τJ
τ1
τ1
τ2
τ2
R1
R1R2
R2
τ
τC
Ci i/Ri
Ci= τi/Ri
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.693 0.001222
0.621 0.005254
0.307 0.038140
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
AUIRGP4062D/P4062D-E
www.irf.com 9
1K
VC C
DUT
0
L
L
Rg
80 V DUT
480V
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
DC
4x
DUT
360V
VCC
10 www.irf.com
AUIRGP4062D/P4062D-E
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
-50
-40
-30
-20
-10
0
10
20
30
-0.15 -0.05 0.05 0.15 0.25
time (μS)
I
RR
(A)
Peak
I
RR
Q
RR
t
RR
10%
Pe a k
I
RR
-100
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00
time (μS)
V
CE
(V)
-50
0
50
100
150
200
250
300
I
CE
(A)
V
CE
I
CE
-100
0
100
200
300
400
500
600
-0.40 0.10 0.60
Time(μs)
V
CE
(V)
-5
0
5
10
15
20
25
30
EOFF Loss
5% VCE
5% ICE
90% ICE
tf
VCE
C
ICE
-100
0
100
200
300
400
500
600
11.70 11.90 12.10 12.30
Time (μs)
V
CE
(V)
-10
0
10
20
30
40
50
60
EON
ICE
C
90% test
10% ICE
5% VCE
tr
VCE
C
AUIRGP4062D/P4062D-E
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TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Lot Code
YWWA
XX or XX
Part Number
IR Logo
AUGP4062D
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
12 www.irf.com
AUIRGP4062D/P4062D-E
TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
Lot Code
YWWA
XX or XX
Part Number
IR Logo
AUGP4062D-E
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRGP4062D/P4062D-E
www.irf.com 13
Ordering Information
Complete Part Number
Form
Quantity
AUIRGP4062D TO-247AC Tube 25 AUIRGP4062D
AUIRGP4062D-E TO-247AD Tube 25 AUIRGP4062D-E
Standard Pack
Package TypeBase part number
14 www.irf.com
AUIRGP4062D/P4062D-E
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Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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