AAT3190ITP-1-T1 - AnalogicTech

General Description

The AAT3190 charge pump controller provides the

regulated positive and negative voltage biases

required by active matrix thin-film transistor (TFT)

liquid-crystal displays (LCDs), CCD Sensors and

OLEDs. Two low-power charge pumps convert

input supply voltages ranging from 2.7-5.5V into two

independent output voltages.

The dual low-power charge pumps independently

regulate a positive (VPOS) and a negative (VNEG)

output voltage. These outputs use external diode

and capacitor multiplier stages (as many stages as

required) to regulate output voltages up to ±25V.

Built in soft start circuitry prevents excessive in-

rush current during start up. A high switching fre-

quency enables the use of small external capaci-

tors. The device’s shutdown feature disconnects

the load from VIN and reduces the quiescent cur-

rent to less than 1.0 µA.

The AAT3190 is available in MSOP 8 or TSOPJW-

12 packages and is specified over a -40°C to 85°C

operating temperature range

Features

•V

IN Range: 2.7-5.5 Volts

• Adjustable ± dual charge pump

• Positive supply output up to +25V

• Negative supply output down to -25V

• Up to 30mA output current

• 1.0 MHz Switching Frequency

• < 1.0µA Shutdown Current

• Internal power MOSFETs

• Internally controlled Soft-Start

• Fast Transient Response

• Ultra-Thin Solution (No Inductors)

• -40°C to 85°C Temperature Range

• Available in 8-Pin MSOP, 12-pin TSOPJW

Applications

• TFT Active-Matrix LCDs

• Passive-Matrix Displays

• Personal Digital Assistants (PDAs)

• CCD Sensor Voltage Bias

• Organic LEDs (OLED)

AAT3190

Positive/Negative Charge Pump for Voltage Bias

Typical Application

AAT3190

INPUT

NEGATIVE

OUTPUT

POSTIVE

OUTPUT

DRVN

FBN

REF

GND

FBP

DRVP

Preliminary Information

3190.2004.05.0.91 1

ChargePump™

Pin Description

Pin Configuration

MSOP-8 TSOPJW-12

(Top View) (Top View)

VIN

FBN

REF

FBP

N/C

DRVP

GND

DRVN

1 2

DRVN

VIN

GND

DRVP

FBP

REF

FBN

Pin #

MSOP-8 TSOPJW-12 Symbol Function

1 5 FBP Positive Charge-Pump Feedback Input. Regulates to 1.2V

nominal. Connect feedback resistive divider to analog

ground (GND).

2 4 EN Enable Input. When EN is pulled low, the device shuts off

and draws only 1.0µA. When high, it is in normal opera-

tions. Drive EN through an external resistor.

3 3 REF Internal Reference Bypass Terminal. Connect a 0.1 µF

capacitor from this terminal to analog ground (GND).

External load capability to 50µA. REF is disabled in

shutdown.

4 2 FBN Negative Charge-Pump Regulator Feedback Input.

Regulates to 0V nominal. Connect feedback resistive

divider to the reference (REF).

5 12 DVRP Positive Charge-Pump Driver Output. Output high level is

VIN and low level is PGND.

6 8, 9, 10, 11 GND Ground

7 7 DRVN Negative Charge-Pump Driver Output. Output high level is

VIN, and low level is PGND.

8 1 VIN Input Voltage. 2.7 - 5.5 Volts.

AAT3190

Positive/Negative Charge Pump for Voltage Bias

23190.2004.05.0.91

Absolute Maximum Ratings 1

Note 1: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional operation

at conditions other than the operating conditions specified is not implied. Only one Absolute Maximum rating should be applied at any

one time.

Thermal Information

Note 2: Mounted on a FR4 board.

Note 3: Derate 6.7mW/°C above 25°C.

Note 4: Derate 6.25mW/°C above 25°C.

Symbol Description Value Units

ΘJA Thermal Resistance (MSOP-8) 2150 °C/W

ΘJA Thermal Resistance (TSOPJW-12) 2160 °C/W

PDMaximum Power Dissipation (MSOP-8) (TA= 25°C) 2, 3 667 mW

PDMaximum Power Dissipation (TSOPJW-12) (TA= 25°C) 2, 4 625 mW

Symbol Description Value Units

VIN Input Voltage -0.3 to 6 V

VEN EN to GND -0.3 to 6 V

VN_CH DRVN to GND -0.3V to (VIN + 0.3V) V

VP_CH DRVP to GND -0.3V to (VIN + 0.3V) V

Other Inputs REF, FBN, FBP to GND -0.3V to (VIN + 0.3V) V

IMAX

Continuous Current into DRVN, DRVP ±200 mA

All Other Pins ±10 mA

TJOperating Junction Temperature Range -40 to 150 °C

TLEAD Maximum Soldering Temperature (at leads, 10 sec) 300 °C

AAT3190

Positive/Negative Charge Pump for Voltage Bias

3190.2004.05.0.91 3

Electrical Characteristics

(VIN= 5.0V, CREF = 0.1µF, TA= -40 to 85°C. Unless otherwise noted, typical values are at TA= 25°C)

Symbol Description Conditions Min Typ Max Units

VIN Input Supply Range 2.7 5.5 V

UVLO Input Under Voltage Threshold VIN rising 1.8 V

VIN Falling, 40 mV hysteresis (typ) 1.6

IIN Input Quiescent Supply Current VFBP = 1.5V, VFBN = -0.2V, 400 800 µA

no load on DRVN and DRVP

ISD Shutdown Supply Current VEN = 0 V 0.1 1.0 µA

FOSC Operating Frequency 0.8 1.0 1.2 MHz

Negative Low-Power Charge Pump

VFBN FBN Regulation Voltage -100 0 +100 mV

IFBN FBN Input Bias Current VFBN = -50mV -100 +100 nA

RDSNCHN DRVN NCH On-Resistance 1.5 5.0 Ω

RDSPCHMIN MIN DRVN PCH On-Resistance VFBN = 100mV, VIN = 4V 1.0 5.0 Ω

RDSPCHMAX MAX DRVN PCH On-Resistance VFBN = -100mV, VIN = 4V 20 kΩ

Positive Low-Power Charge Pump

VFBP FBP Regulation Voltage 1.15 1.2 1.25 V

IFBP FBP Input Bias Current VFBP = 1.5V -60 +100 nA

RDSPCHP DRVP PCH On-Resistance 1.0 5.0 Ω

RDSNCHMIN MIN DRVP NCH On-Resistance VFBP = 1.15V, VIN = 4V 3 15 Ω

RDSNCHMIN MAX DRVP NCH On-Resistance VFBP = 1.25V, VIN = 4V 20 kΩ

Reference

Reference Voltage -2.0 µA < IREF < 50 µA 1.18 1.2 1.22 V

VREF Reference Under Voltage VREF rising 0.8 V

Threshold

Logic Signals

VIL Input Low Voltage 0.5 V

VIH Input High Voltage 1.5 V

IIL Enable Input Low Current VIN = 5.0V, FBP = 1.5V, FBN = -0.2V 1 µA

IIH Enable Input High Current VIN = 5.0V, FBP = 1.5V, FBN = -0.2V 1 µA

Thermal Limit

TSD Over Temp Shutdown Threshold 140 °C

THYST Over Temp Shutdown Hysteresis 15 °C

AAT3190

Positive/Negative Charge Pump for Voltage Bias

43190.2004.05.0.91

Typical Characteristics

Negative Output Voltage vs. Load Current

TA = 25°

-8

-7.75

-7.5

-7.25

-7

-6.75

-6.5

010203040

INEG (mA)

VNEG (V)

VIN = 5.0V

Positive Output Voltage vs. Load Current

TA = 25°

IPOS (mA)

VPOS (V)

11.4

11.6

11.8

12.2

12.4

0 5 10 15 20 25 30 35 40

VIN = 5.0V

Maximum VOUT vs. VIN

IOUT = 5mA and 15mA

-15

-12.5

-10

-7.5

-5

-2.5

2.5

7.5

12.5

2.5 3 3.5 4 4.5 5 5.5

VIN (V)

VOUT (V)

ION = 15mA

IOP = 15mA

ION = 5mA

IOP = 5mA

Reference Voltage vs. Temperature

1.18

1.19

1.2

1.21

1.22

-40 -15 10 35 60 85

Temperature (°C)

Reference Voltage (V)

Switching Frequency vs. Temperature

800

850

900

950

1000

-40 -15 10 35 60 85

Temperature (°

Frequency (kHz)

Quiescent Current vs. Temperature

250

270

290

310

330

350

-40 -15 10 35 60 85

Temperature (°C)

Quiescent Current (µA)

VFBP = 1.5V

VFBN = -0.2V

AAT3190

Positive/Negative Charge Pump for Voltage Bias

3190.2004.05.0.91 5

Typical Characteristics

AAT3190-1 Power-Up Sequence

500µ

sec/div

VPOS and VNEG

(bottom traces, V)

Enable

(top trace, V)

Enable

VPOS

VNEG

-12

-8

-4

-12

-10

-8

-6

-4

-2

AAT 3190 Power-Up Sequence

-12

-8

-4

500µ

sec/div

VPOS and VNEG

(bottom traces, V)

-12

-10

-8

-6

-4

-2

Enable

(top trace, V)

Enable

VPOS

VNEG

VNEG Load Transient

-150

-100

-50

100

150

200

250

50µ

s/div

VNEG (bottom trace)

(50mV/div)

-60

-50

-40

-30

-20

-10

INEG (top trace)

(10mA/div)

VPOS Load Transient

-150

-100

-50

100

150

200

250

50µ

s/div

VPOS (bottom trace)

(50mV/div)

-60

-50

-40

-30

-20

-10

IPOS (top trace)

(10mA/div)

Negative Output Efficiency vs. Load Current

VIN = 5.0V

0 10203040

INEG (mA)

Efficiency (%)

VNEG = -7.3V

25°C

85°C

Positive Output Efficiency vs. Load Current

VIN = 5.0V

0 10203040

IPOS (mA)

Efficiency (%)

VPOS = 12.3V 25°C

85°C

AAT3190

Positive/Negative Charge Pump for Voltage Bias

63190.2004.05.0.91

Typical Characteristics

AAT3190 Reference Undervoltage Threshold

(120µF capacitor placed across REF to limit rate of rise

of REF for test purposes only)

500nsec/div

DRVN

(2V/div)

SHDN

(2V/div)

REF

(0.2V/div)

0.5V

Negative Output Voltage vs. Load Current

T = 85°

-8

-7.75

-7.5

-7.25

-7

-6.75

-6.5

010203040

INEG (mA)

VNEG (V)

VIN = 5.0V

Positive Output Voltage vs. Load Current

T = 85°

010203040

IPOS (mA)

VPOS (V)

11.4

11.6

11.8

12.2

12.4

VIN = 5.0V

Output Ripple

VPOS = 12.3V, IPOS = 5mA, VNEG = 7.2V, INEG = 10mA

500nsec/div

VNEG

(10mV/div)

VPOS

(10mV/div)

AAT3190

Positive/Negative Charge Pump for Voltage Bias

3190.2004.05.0.91 7

AAT3190

Positive/Negative Charge Pump for Voltage Bias

83190.2004.05.0.91

Functional Block Diagram

Control

UVLO

Band

Gap

Ref.

Reference

Oscillator

Over

Temperature

Protection

DRVP

DRVN

FBP

REF

FBN

GND

Functional Description

Dual Charge-Pump Regulators

The AAT3190 provides low power regulated output

voltages from two individual charge pumps. Using

a single stage, the first charge pump inverts the

supply voltage (VIN) and provides a regulated neg-

ative output voltage. The second charge pump dou-

bles VIN and provides a regulated positive output

voltage. These outputs use external Schottky

diodes and capacitor multiplier stages (as many as

required) to regulate up to ±25V. A constant switch-

ing frequency of 1MHz minimizes the output ripple

and capacitor size.

Negative Charge Pump

During the first half-cycle, the P-channel MOSFET

turns on, and the flying capacitor C7 charges to VIN

minus a diode drop (figure 1). During the second

half-cycle, the P-channel MOSFET turns off, and

the N-channel MOSFET turns on, level shifting C7.

This connects C7 in parallel with the output reser-

voir capacitor C10. If the voltage across C10

minus a diode drop is less than the voltage across

C7, current flows from C7 to C10 until the diode

turns off.

AAT3190

Positive/Negative Charge Pump for Voltage Bias

3190.2004.05.0.91 9

Positive Charge Pump

During the first half-cycle, the N-channel MOSFET

turns on and charges the flying capacitor C4

(Figure 2).

During the second half-cycle, the N-channel

MOSFET turns off and the P-channel MOSFET

turns on, level shifting C4 by the input voltage.

This connects C4 in parallel with the reservoir

capacitor C5. If the voltage across C5 plus a

diode drop is less that the level shifted flying

capacitor (C4 + VIN), charge is transferred from

C4 to C5 until the diode turns off.

Figure 1: Negative Charge Pump Block Diagram

VREF

FBN

DRVN

GND

1/2 A4

BAT54SDW

C10

OSC CTL

AAT3190

VON

VON = -(R1/R2) x VRE

1.2V

Figure 2: Positive Charge Pump Block Diagram

VREF

1.2V

FBP

DRVP

VIN

GND

1/2 A3

BAT54SDW

OSC CTL

AAT3190

VOP

VOP = (1+R3/R4) x VRE

AAT3190

Positive/Negative Charge Pump for Voltage Bias

10 3190.2004.05.0.91

Voltage Reference

The voltage reference is a simple band gap with an

output voltage equal to b VBE + K*VT. The band

gap reference amplifier has an additional compen-

sation capacitor from the negative input to the out-

put. This capacitor serves to slow down the circuit

during startup and soft starts the voltage reference,

and the regulator output from overshoot. The refer-

ence circuit amplifier also increases the overall

PSRR of the device. An 80 KΩresistor serves to

isolate and buffer the amplifier from a small internal

filter capacitor and an optional large external filter

capacitor.

Enable and Start-up

The AAT3190 is disabled by pulling the EN pin low.

The threshold levels lie between 0.5V and 1.5V.

Even though the quiescent current of the IC during

shutdown is less than 1µA, the positive output volt-

age (VOP) and any load current associated with it

does not disappear without the complete removal of

the input voltage. This is due to the fact that with no

switching of the DRVP pin, the input voltage simply

forward biases the Schottky diodes associated with

the VOP charge pump, providing a path for load cur-

rent to be drawn from the input voltage.

Depending on the application, the supplies must be

sequenced properly to avoid damage or latch-up.

The AAT3190 start-up sequence ramps up the VOP

output 200µsec after the VON output is present. The

AAT3190-1 ramps up the positive supply before the

negative supply.

Over Temperature Protection

A logic control circuit will shut down both charge

pumps in the case of an over temperature condition.

UVLO (Under voltage lockout)

A UVLO circuit disables the AAT3190 when the

input voltage supply is lower than 1.8V nominal.

Design Procedure and

Component Selection

Output Voltage

The number of charge pump stages required for a

given output varies with the input voltage applied.

The number of stages required can be estimated by

for the positive output and

for the negative output.

When solving for npand nnround up the solution to

the next highest integer to determine the number of

stages required.

VON

The negative output voltage is adjusted by a resis-

tive divider from the output (VON) to the FBN and

REF pin.

The maximum reference voltage current is 50µA

therefore the minimum allowable value for R2 of

figure 1 is 24kΩ. It is best to select the smallest

value possible for R2 as this will keep R1 to a min-

imum. This limits errors due to the FBN input bias

current. The FBN input has a maximum input bias

current of 100nA. Using the full 50µA reference

current for programming VON:

will limit the error due to the input bias current at

FBN to less than 0.2%

IFBN

IPGM

= = 0.2%

0.1µA

50µA

VREF

IPGM = = = 50µ

1.2

24.1k

VON

2VF - VIN

nn =

VOP - VIN

VIN - 2VF

np =

AAT3190

Positive/Negative Charge Pump for Voltage Bias

3190.2004.05.0.91 11

With R2 selected R1 can be determined.

VOP

The positive output voltage is set by way of a resis-

tive divider from the output (VOP) to the FBP and

ground pin. Limiting the size of R4 reduces the

effect of the FBP bias current. For less than 0.1%

error limit R4 to less than 12 kΩ.

Once R4 has been determined solve for R3.

Flying and Output Capacitor

The fly capacitor minimum value is limited by the

output power requirement while the maximum

value is set by the bandwidth of the power supply.

If CFLY is too small the output may not be able to

deliver the power demanded, while too large of a

capacitor may limit the bandwidth and time

required to recover from load and line transients. A

0.1µF X7R or X5R ceramic capacitor is typically

used. The voltage rating of the fly and reservoir

output capacitors vary with the number of charge

pump stages. The reservoir output capacitor

should be roughly 10 times the fly capacitor. Use

larger capacitors for reduced output ripple. A 1µF

X7R or X5R type ceramic is typically used.

Positive Output Capacitor Voltage

Ratings

The absolute steady state maximum output voltage

(neglecting the internal RDS(ON) drop of the internal

MOSFETs) for the nth stage is

where VFWD is the estimated forward drop of the

Schottky diode. This is also the voltage rating

required for the nth bulk capacitor in the positive

output charge pump.

The voltage rating for the nth flying capacitor in the

positive stage is

where VBULK(0) is the input voltage.

Table 1. Positive Output Capacitor Voltages

Negative Output Capacitor Voltage

Ratings

The absolute steady state maximum output voltage

(neglecting the internal RDS(ON) drop of the internal

MOSFETs) for the nth stage is

This is also the voltage rating required for the nth

bulk capacitor in the negative output charge pump.

VBULK(n) = -n · VIN + 2 · n · VFW

VIN = 5.0V, VFWD = 0.3V

Stages (n) VBULK(n) VFLY(n)

1 9.4V 4.7V

2 13.8V 9.1V

3 18.2V 13.5V

4 22.6V 17.9V

5 27.0V 22.3V

6 31.4V 26.7V

VFLY(n) = VBULK(n + 1) - VFW

VBULK(n) = (n + 1) · VIN - 2 · n · VFWD

R3 = R4 · - 1

VREF





IFBP

IPGM

= = 0.1%

0.1µA

100µA

VREF

IPGM = = = 100µ

1.2V

12k

VNEG · R2

-VREF

R1 =

AAT3190

Positive/Negative Charge Pump for Voltage Bias

12 3190.2004.05.0.91

The voltage rating for the nth flying capacitor in the

negative stage is

Table 2. Negative Output Capacitor Voltages

Single Output Operation

If only one of the two channels is needed, it is pos-

sible to disable either output. Connect the respec-

tive FB pin to VIN to disable the output, e.g. connect

FBN to VIN in order to disable the negative output.

Input Capacitors

Input Capacitor

The primary function of the input capacitor is to pro-

vide a low impedance loop for the edges of pulsed

current drawn by the IC. A low ESL X7R or X5R type

ceramic capacitor is ideal for this function. The size

required will vary depending on the load, output volt-

age, and input voltage characteristics. Typically the

input capacitor should be 5 to 10 times the fly capac-

itor. If the source impedance of the input supply is

high, a larger capacitor may be required. To mini-

mize stray inductance the capacitor should be

placed as close as possible to the IC. This keeps the

high frequency content of the input current localized,

minimizing radiated and conducted EMI.

Rectifier Diodes

For the rectifiers use Schottky diodes with a volt-

age rating of 1.5 times the input voltage. The max-

imum steady state voltage seen by the rectifier

diodes for both the positive and negative charge

pumps (regardless of the number of stages) is

The BAT54S dual Schottky is offered in a SOT23

package that provides a convenient pin-out for the

voltage doubler configuration. The BAT54SDW

quad Schottky in SOT363 (2x2mm) is a good

choice for multiple-stage charge pump configura-

tion (see evaluation board schematic).

PC Board Layout

The input and reference capacitor should be placed

as close to the IC as possible. Place the program-

ming resistors (R1-R4) close to the IC, minimizing

trace length to FBN and FBP. Figure 3 and 4 display

the evaluation board layout with the TSOPJW-12

package.

VREVERSE = VIN - VF

VIN = 5.0V, VFWD = 0.3V

Stages (n) VBULK(n) VFLY(n)

1 -4.4V 4.7V

2 -8.8V 9.1V

3 -13.2V 13.5V

4 -17.6V 17.9V

5 -22.0V 22.3V

6 -26.4V 26.7V

VFLY(n) = VFWD - VBULK(n

)

Figure 3: AAT3190 Evaluation Board Top Side Figure 4. AAT3190 Evaluation Board Bottom Side

Figure 5: AAT3190 Evaluation Board Schematic (shown with 2 stages)

VOP = 12V, VON = -7V

0.1µF

C10

0.1µF

BAT54SDW

C22

1µF

C21

1µFC20

1µF

C19

1µF

139k

24.1k

6.02k

56.2k

205K

4.7µF

0.1µF

VOP

GND

VIN

VON

GND

VIN

FBN

REF

4 9

GND

DRVP 12

FBP

N/C

6DRVN 7

AAT3190ITP

EN C19, C20, C21, C22 Murata GRM39X5R105K16 1µF 16V X5R 0603

C7, C8, C9, C10 Taiyo Yuden EMK107BJ104MA 0.1µF 16V X7R 0603

C1 Taiyo Yuden JMK212BJ475MG 4.7µF 6.3V X5R 0805

AAT3190

Positive/Negative Charge Pump for Voltage Bias

3190.2004.05.0.91 13

AAT3190

Positive/Negative Charge Pump for Voltage Bias

14 3190.2004.05.0.91

Ordering Information

Note 1: XYY = assembly and date code.

Package Information

MSOP-8

All dimensions in millimeters.

PIN 1

1.95 BSC

0.254 BSC

0.155 ± 0.075

0.60 ± 0.20

3.00 ± 0.10

0.95 ± 0.15

0.95 REF

0.85 ± 0.10

3.00 ± 0.10

10° ± 5°

4° ± 4°

0.65 BSC 0.30 ± 0.08

0.075 ± 0.075

4.90 ± 0.10

GAUGE PLANE

Package Power-Up Sequence Marking1Part Number (Tape and Reel)

MSOP-8 -, + JDXYY AAT3190IKS-T1

TSOPJW-12 -, + JDXYY AAT3190ITP-T1

TSOPJW-12 +, - LKXYY AAT3190ITP-1-T1

TSOPJW-12

All dimensions in millimeters.

0.20 + 0.10

- 0.05

0.055 ± 0.045 0.45 ± 0.15

7° NOM

4° ± 4°

3.00 ± 0.10

2.40 ± 0.10

2.85 ± 0.20

0.50 BSC 0.50 BSC 0.50 BSC 0.50 BSC 0.50 BSC

0.15 ± 0.05

0.9625

0.0375

1.00 + 0.10

- 0.065

0.04 REF

0.010

2.75 ± 0.25

AAT3190

Positive/Negative Charge Pump for Voltage Bias

3190.2004.05.0.91 15

AAT3190

Positive/Negative Charge Pump for Voltage Bias

16 3190.2004.05.0.91

Advanced Analogic Technologies, Inc.

830 E. Arques Avenue, Sunnyvale, CA 94085

Phone (408) 737-4600

Fax (408) 737-4611

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