MOTOROLA SC (XSTRS/R F) MOTOROLA = SEMICONDUCTOR oxy T3ZI\-al TECHNICAL DATA 2N6604 in | L The RF Li e NF = 2.7 dB @ 1.0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR ... designed for use in high-frequency, low-noise, small-signal, narrow and wideband amplifiers. Ideal for use in microstrip thin and thick film applications. @ Low Noise Figure NF = 2.7 dB (Typ) @ f = 1.0 GHz High Power Gain Gyy(max) = 16 dB (Typ) @ f = 1.0 GHz @ High Current Specified Performance @ ic = 30 mA @ jon Implantation and Gold Metallization @ Metal/Ceramic Hermetic Package @ JAN, JTXV Available fa) MAXIMUM RATINGS (Ta = 25C Free Air Temperature) Rating Symbol Value Unit Collector-E mutter Voltage VcEO 15 Vde Collector-Base Voltage Vcao 3 Vode Emitter-Base Voltage Veao 3.0 Vide Collector CurrantContinuous te sO mAde Total Device Dissipation @ Te = 126C Pp 500 mw Derate Above 75C 666 mec Storage Temparatura Range Tstg -65 to +200 oC *Indicates JEOEC Registered Data. Specifications and Package Options Devices using the same die type as the 2N6604: MAF911 4 Lead Plastic Macro-T Case 302-01 MRFOI4) = - TO-72 MMBR9ZO MiniBloc Plastic (SOT-23) TO-236 BFRO1 3 Lead Plastic Macro-T Case 302A-01 BFRCS1 = Unencapsulated Chip STYLE 1 PIN1 COLLECTOR 2 EMITTER BASE 4 EMITTER NOTE 1. DIMENSION "K APPLIES TO ALL LEADS 2. DIRECTION OF 46 CUT ON PIN 1 IS VENDOR OPTION CASE 303-01 MOTOROLA RF DEVICE DATA 2-129 4BE D MM 6367254 0094151 3 m@mnot. MOTOROLA SC (XSTRS/R F) UbE D MM 6367254 0094152 S MEMOTh 2N6604 F3I-a\ ELECTRICAL CHARACTERISTICS (Ta, = 25C unless otherwise noted) [ Characteristic | sympor | Min | tye | max | _unkr | *OFF CHARACTERISTICS Collector-Emitrer Breakdown Valtage ViBRICEO 15 - - Vac lig = 1.0 made, Ig = 0) Cotlector-Base Breakdown Voltage VisRicsoO 25 - ~ Vde (ig = 0.1 mAde, le = 0) Emitter-Base Breakdown Voitage V(SRIEBO 3.0 - - Vde Ug 20.1 mAdc, Ic = 0) Coltector Cutoff Current 'c8o - - 50 nAde (Vcg = 15 Vae, ig * 0) Y ON CHARACTERISTICS OC Current Gain hee 30 - 200 - (Ig = 30 mAdc, Veg = 10 Vde} *DYNAMIC CHARACTERISTICS Collector-Base Capacitance (1) Cob 0.30 - 0.80 pF (Veg = 10 Vde, Ig *0,0.1 MHz < f < 1.0 MHz) *FUNCTIONAL TEST Common-Emitter Amplifier Power Gain (Figure 2) Gpe 15 - 21 dB (VcE = 10 Vde, ig = 30 mAdc, f * 1.0 GHz) Spot Noise Figure (Rg = Optimum Figure 2) NF 15 - 3.0 dB (Vee = 10 Vie, Ic = 5.0 mAde, f = 1.0 GHz) Power Gain at Optimum Noise Figura GNe 9.0 _ - 3B (VcE = 10 Vac, Ic = 5.0 mAde, f = 1.0 GHz) TYPICAL 2 GHz PERFORMANCE Maximum Unilateral Gain (Figure 2) (2) Gytmax) - 10 - dB (VcE = 10 Vde, ig = 30 mAdc, f = 2.0 GHz) Norse Figure (Rg = Optimum Figure 2) NF - 43 - aa (Voce = 10 Vie, Ig = 5.0 made, f = 2.0 GHz) Indicates JEDEC Registered Data. dt) Cop Measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal of the bridge. 1Sg4l2 (2) Guimax) is calculated from the S-Parameters using the equation Gyimax) = __*{-______ (1-184 412H(1 -1S9912 FIGURE 1 BLOCK DIAGRAM FOR POWER GAIN AND NOISE FIGURE Signat RE Generator AF Power Gain Voltmeter VBE Vee Bias Bias a? & 8 Lo Sias Microlab/FXR SF31 Tee Doubte Slug Tuners M_] Lv or Equivatent 8 e Microlab/F XA HW-OBN - Bias Tee or Equiv 4 TUT Local Osc t=fye +] 30B 30 MHz Noise Figure Autech Mode! 75 4 Automatic NF tF 30 MHz Nave Crode Meter or Amp LP Filter Equivatent MOTOROLA RF DEVICE DATA 2-130 MOTOROLA SC (XSTRS/R F) GAIN (d8} fz, CURRENT GAIN-GANDWIOTH PRODUCT (GHz) 0.1 FIGURE 2 POWER GAIN AND NOISE FIGURE versus FREQUENCY 02 o3 NF {ig = mA} 05 10 FREQUENCY (GHz) 20 uUbE D MM b3b7e54 0094153 ? MBNOTL 2N6604 ye am FIGURE 4 CURRENT GAIN BANDWIDTH PRODUCT verais COLLECTOR CURRENT $5 40 3.0 20 10 fregy * 1.0GHz Voe7 WV 30 Ig, COLLECTOR CURRENT (mA) (AP) UNOS ISION IN Gop. Cob OUTPUT CAPACITANCE ipF) 3 GAIN (48) TBi-al FIGURE 3 OUTPUT CAPACITANCE versus VOLTAGE _ = Cor Mathod 3241) -STD-7508 3236} ef 0 20 40 60 8.0 A 2 16 Veg, COLLECTOR-BASE VOLTAGE (Vdc) FIGURE & POWER GAIN versus COLLECTOR CURRENT 1 Gyltmax) ISa_l2 12 2 = > f= 1.0 GHz 0 Vce= 10 9 19 20 30 a se fe, COLLECTOR CURRENT {mA} FIGURE 6 NOISE FIGURE versus COLLECTOR CURRENT WF, NOISE FIGURE (dB) 10 f= 1.0GHz *10V xn 50 100 ig, COLLECTOR CURRENT (mA) MOTOROLA RF DEVICE DATA 2-131 MOTOROLA SC CXSTRS/R F) 4EE D MM 6367254 0094154 9 MMOTL 2N6604 T-B1\-ay COMMON EMITTER SCATTERING PARAMETERS FIGURE 7 INPUT AND OUTPUT REFLECTION FIGURE FORWARD AND REVERSE TRANSMISSION COEFFICIENTS versus FREQUENCY COEFFICIENTS versus FREQUENCY Vee" IOV, Ig = 30mA. Vee * 10. Ig = 30 ma. S PARAMETERS Vee Ie Frequency si S21 $12 $22 (Volts) (ma) {MlHz) 1st Le (S24 Le {$121 Lo ($224 Lo 52 5 100 0.72 -40 12.37 163 0.028 67 0.91 -18 200 0.65 -78 10.38 133 0.048 51 0.76 -32 500 0.61 -137 $.75 100 0.067 34 0.50 -45 1000 0.61 -168 3.13 78 0.082 31 0.41 ~b4 2000 0.63 161 158 47 0.112 30 0.41 -80 10 100 0.57 -60 19.54 146 0.024 63 0.85 ~27 200 0.55 -105 14.70 125 0.038 47 0.64 ~43 500 0.59 -155 742 95 0.061 39 0.37 ~55 1000 0.61 -178 3.77 76 0.06 40 0.29 ~62 2000 0.64 186 191 50 0.106 39 0.30 -86 30 100 0.43 -11 30.58 138 0016 8? 0.72 -39 200 0.53 -145 19.35 114 0.022 49 0.46 -57 500 062 -173 8.42 gt 0.035 $1 0.24 ~69 4.000 0.63 172 4.36 75 0.088 54 0.18 -76 2000 0.67 151 2.19 52 0.099 49 0.21 -99 50 100 0.46 -134 32.34 129 0.013 Ey) 0.64 ~42 200 057 -158 19.19 110 0.018 51 0.40 ~66 500 0.64 -178 8.13 89 0.031 57 0.22 ~62 1000 0.65 170 417 74 0.053 58 0.19 -70 2000 0.70 150 2.10 2 0.092 54 0.22 -97 10 5 100 0.74 36 12.34 154 0.023 69 0.93 -16 200 0.67 -71 10.56 135 0.040 54 081 ~26 500 059 -131 6.09 102 0.068 37 057 36 1000 058 -164 3.32 79 0.073 33 050 -44 2000 0.60 164 1.87 48 0.098 32 0.49 -69 10 100 0.60 ~52 19.75 148 0.020 65 0.87 -21 200 0.56 -95 15.30 127 0.032 49 0.69 -33 500 Os6 -149 7.69 97 0.044 a 0.45 -41 1000 0.58 ~174 4.07 7 0.067 42 0.39 -47 2000 061 189 2.03 50 0.095 40 0.39 -70 30 100 0.44 ~94 32.03 136 0.014 59 0.75 -31 200 0.50 =135 20.76 115 0.021 49 0.52 <4 $00 0.57 -168 9.13 a1 0.032 52 0.33 43 1000 0.59 75 4.71 75 0.052 54 0.29 48 2000 0.64 154 2.34 2 0.089 49 0.30 -72 60 100 0.44 ~117 33.56 129 0.012 59 0.68 -31 200 0.52 ~180 19.94 109 0.017 50 0.47 -36 600 0.89 174 852 39 0.028 56 0.34 -35 1000 0.61 173 4.38 75 0.049 57 0.32 -43 2000 0.66 152 2.21 51 0.083 52 0.34 -70 na MOTOROLA RF DEVICE DATA 2-132