MITSUBISHI Nch POWER MOSFET | FS1AS-18A | HIGH-SPEED SWITCHING USE FS1AS-18A OUTLINE DRAWING Dimensions in mm 6.5 5.0+02 a 0520.1 : a il poe ae i Ni >< oS | 2) 8 B Le i Z | De Ol gy 5 O.9MAX, IIT ' 05+0.2/) 2.3 12.3 | 08 yo oD & & wt) GATE 2) DRAIN 2 SOURCE 4 DRAIN WVDSS cece c tect enact tee teen en eennans SO00V ers (ON) (MAX) er 15.02 DD cece nen eee een eee eter eet tet 1A MP-3 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Tc = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voRage Vas = 0V 900 Vv Vass Gate-source voltage Vos = 0V 30 V Ip Drain current 1 A {pM Drain current (Pulsed) 3 A Pp Maximum power dissipation 55 Ww Toh Channel temperature 55 ~ +150 C Tstg Storage temperature 55 ~ +150 C _ Weight Typical value 0.26 g 2 ~ 550 MITSUBISHI ELECTRIC MITSUBISH! Nch POWER MOSFET FS1AS-18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (tch = 25C) imi Symbol! Parameter Test conditions 7 Limits Unit Min. Typ. Max. VBR} DSS | Drain-source breakdown voltage | ID = 1mA, Vas = OV 900 ~ _ Vv V (8R} GSS | Gate-source breakdown voltage | 1GS = +100A, Vps = OV 30 = Vv lass Gate leakage current Vas = +25V, VDS = OV _ _ +10 BA ipss Drain current Vbs = 900V, Vas = OV _ _ 1 mA VGS (th) Gate-source threshold voltage ID = IMA, Vos = 10V 2 3 4 Vv rDS (ON) Orain-source on-state resistance | Ip = 0.5A, Vas = 10V _ 414.5 15.0 Q VbS (ON) | Drain-source on-state voltage | ID = 0.5A, Vas = 10V _ .75 7.50 Vv lyts | Forward transfer admittance | ip = 0.5A, Vos = 10V 0.6 1.0 _ Ss Ciss Input capacitance ~ 270 _ pF Coss Output capacitance Vos = 25V, VG@S = OV, f = {MHz = 26 _ pr Cres Reverse transfer capacitance ~ 4 _ pF td fon) Turn-on delay time _ 9 _ ns tr Rise time VoD = 200V, iD = 0.5A, VGS = 10V, ~ 12 ns td (off) Turn-off delay time RGEN = RGS = 500 _ 35 _ ns t Fall time _ 30 _ ns VsD Source-drain voltage is = 0.5A, Vas = OV _ 1.0 15 Vv Rth (ch-c) | Thermal resistance Channel to case _ 2.27 CW PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 101 5 = 3 * 3 z 10 = 5 6 5 7 tw = 100s < m8 a. < 3 tms Q 5 2 Qa 40 3S a 2 107 10ms =< 7 100ms a Ss 20 g 85 DC 9 3 Te = 25C a 2} Single Pulse 0 10-2 0 50 100 150 200 100 23 5710! 23 57102 23 57108 CASE TEMPERATURE Tc (C) DRAIN-SOURGE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) Vas = 20V Ves = 20V10V 2.0 1.0 To = 25C BV te = 25C Pulse Tes: Pulse Test <= 16 <= 08 a a 5 12 5 06 i i o fa s 5 a 08 a 04 Zz = za < ica 5 04 B 02 ay 4v 0 0 0 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 - 551 ELECTRIC DRAIN-SOURCE ON-STATE CAPACITANCE Ciss, Coss, Crss (pF) VOLTAGE bs (ON) (V) DRAIN CURRENT ip (A) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE MITSUBISHI Nch POWER MOSFET FS1AS-18A HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) (TYPICAL) To = 26C 20 To = 25C Pulse Test Pulse Test Ld < gS 16 o Zz Vas = 10V z o t 20V Oa 12 O S Sz 8 Be ze zn ae 0 0 0 4 8 12 16 20 10-2 23 5710123 5710623 7101 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 4 To = 25C a Vos = 15V Vos = 50V Pulse Test Pulse Test 5 co nz 3 Zs 2 fe iW k O 9 10 ee 7 BE 5 es Pe 3 2 0 10-3 0 4 8 12 16 20 107 2 3 #5 7109 2 3 5 7101 GATE-SOURCE VOLTAGE Vas (V} DRAIN CURRENT ip (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) ' o 3 Toh = 25C 5 2 Voo = 200V 3 Vas = 10V 2 e 102 AGEN = Ros = 50Q 102 7 7 Ss 5 5 - 3 oO 3 td(off) 2 z 2 tt 107 e te 7 = 401 ta(on)} Teh = 25C eo 7 f = 1MHz Vas = 0V 23 57100 23 5710! 23 5710? 2 DRAIN-SQURCE VOLTAGE Vos (V) 5 710 2 3 5 7101 DRAIN CURRENT tp {A) 2 - 852 ate MITSUBISHI ELECTRIC DRAIN-SOURCE ON-STATE RESISTANCE rds (ON) (tC) DRAIN-SOURCE ON-STATE RESISTANCE 108 (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8p) oss (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8R) 05s (25C) GATE-SOURCE VOLTAGE Vas (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) G Teh = 25C lp=1A 16 12 nyo @ ON 400 mo mw 10-7 0.4 Vos = 250V 400V 600V 0 4 8 12 16 20 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Ves = 10V lp = 1/2ID Pulse Test -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 0V 1D = 1mA -50 0 50 100 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE Zh (cho) COSY SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD VOLTAGE Vas in) (V) 10-1 7 5 3 2 10 MITSUBISHI Nch POWER MOSFET FS1AS-18A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) Vas =0V Pulse Test fe = 126C 73% 25C 0 0.8 1.6 24 3.2 4.0 SOURCE-DRAIN VOLTAGE Vsp (V} THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = 10V ip = TMA 50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 05 9.02 0.01 Puise -2 10423 5710323 5710-23 5710-123 5710923 57101 23 5710 PULSE WIDTH tw (s) MITSUBISHI 2 - 563 ELECTRIC