MICROWAVE POWER GaAs FET TIM5964-35SLA-422 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 5.85GHz to 6.75GHz HIGH GAIN G1dB=8.0dB(min.) at 5.85GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Gain Compression Point P1dB Power Gain at 1dB Gain Compression Point G1dB Drain Current IDS1 Gain Flatness ( Ta= 25C ) CONDITIONS UNIT MIN. TYP. MAX. dBm 45.0 45.5 dB 8.0 A 8.0 9.0 G dB 0.8 Power Added Efficiency add % 39 3rd Order Intermodulation Distortion IM3 -45 Drain Current Channel Temperature Rise VDS=10V f = 5.85 to 6.75GHz Two-Tone Test Po=35.0dBm dBc -42 IDS2 (Single Carrier Level) A 8.0 9.0 Tch (VDS X IDS + Pin - P1dB) X Rth(c-c) C 100 UNIT MIN. TYP. MAX. mS 6500 V -1.0 -2.5 -4.0 A 20 V -5 C/W 1.0 1.3 Recommended gate resistance(Rg) : Rg= 28 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) ( Ta= 25C ) CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420A Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM5964-35SLA-422 ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 20.0 Total Power Dissipation (Tc= 25 C) PT W 115.4 Channel Temperature Tch C 175 Storage Tstg C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM5964-35SLA-422 RF PERFORMANCE Output Power vs. Frequency 48 VDS= 10 V IDS 8 A Pin= 36.5 dBm Po(dBm) 47 46 45 44 43 5.75 6.00 6.25 6.50 6.75 Frequency (GHz) Output Power vs. Input Power 48 100 f=6.75 GHz VDS= 10 V IDS 8 A 47 90 46 80 Po 70 44 60 43 50 add 42 40 41 30 40 20 39 10 29 31 33 35 Pin(dBm) 3 37 39 add(%) Po(dBm) 45 TIM5964-35SLA-422 Power Dissipation vs. Case Temperature 120 PT(W) 100 80 60 40 20 0 0 40 80 120 160 200 Tc(C) IM3 vs. Output Power Characteristics -10 VDS= 10 V IDS 8 A f= 6.75GHz f= 5MHz IM3(dBc) -20 -30 -40 -50 -60 30 32 34 36 38 Po(dBm), Single Carrier Level 4 40