VS-10BQ100-M3
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Revision: 23-Apr-2019 1Document Number: 93227
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High Performance Schottky Rectifier, 1 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10BQ100-M3 surface-mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) 1 A
VR100 V
VF at IF0.59 V
IRM 1 mA at 125 °C
TJ max. 175 °C
EAS 1.0 mJ
Package SMB (DO-214AA)
Circuit configuration Single
Cathode Anode
SMB (DO-214AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 1 A
VRRM 100 V
IFSM tp = 5 μs sine 780 A
VF1.0 Apk, TJ = 125 °C 0.59 V
TJRange -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ100-M3 UNITS
Maximum DC reverse voltage VR100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) 50 % duty cycle at TL = 143 °C, rectangular waveform 1.0 A
Maximum peak one cycle
non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
780
A
10 ms sine or 6 ms rect. pulse 38
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A
VS-10BQ100-M3
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Revision: 23-Apr-2019 2Document Number: 93227
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
(1) Pulse width = 300 μs, duty cycle = 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
1 A TJ = 25 °C 0.75
V
2 A 0.82
1 A TJ = 125 °C 0.59
2 A 0.65
Maximum reverse leakage current
See fig. 2 IRM
TJ = 25 °C VR = Rated VR
0.5 mA
TJ = 125 °C 1
Typical junction capacitance CTVR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 65 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of charge dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ (1), TStg - 55 to 175 °C
Maximum thermal resistance,
junction to lead RthJL (2) DC operation 36
°C/W
Maximum thermal resistance,
junction to ambient RthJA 80
Approximate weight 0.10 g
0.003 oz.
Marking device Case style SMB (DO-214AA) 1J
dPtot
dTJ
------------- 1
RthJA
--------------<
VS-10BQ100-M3
www.vishay.com Vishay Semiconductors
Revision: 23-Apr-2019 3Document Number: 93227
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
V
FM
-
Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
TJ = 25 °C
TJ = 125 °C
TJ = 175 °C
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0 20 40 60 80 100
0.00001
0.0001
0.001
0.01
0.1
1
10
25 °C
175 °C
125 °C
150 °C
100 °C
75 °C
50 °C
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
10
10020 40 60 80
Z
thJC - Thermal Impedance (°C/W)
t1 - Rectangular Pulse Duration (s)
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2.
2. Peak TJ = Pdm x ZthJC + Tc.
VS-10BQ100-M3
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Revision: 23-Apr-2019 4Document Number: 93227
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
IF(AV) - Average Forward Current (A)
Allowable Case Temperature (°C)
0.0 0.3 0.6 0.9 1.2 1.5
110
120
130
140
150
160
170
180
DC
Square wave (D = 0.50)
80 % rated VR applied
see note (1)
D = 0.75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
IF(AV) - Average Forward Current (A)
Average Power Loss (W)
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0
0.2
0.4
0.6
0.8
DC
RMS limit
D = 0.75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
tp - Square Wave Pulse Duration (µs)
100
1000
IFSM - Non-Repetitive Surge Current (A)
10 100 1000 10 000
10
At any rated load condition and
with rated VRRM applied
following surge
VS-10BQ100-M3
www.vishay.com Vishay Semiconductors
Revision: 23-Apr-2019 5Document Number: 93227
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-10BQ100-M3/5BT 5BT 3200 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95401
Part marking information www.vishay.com/doc?95403
Packaging information www.vishay.com/doc?95404
SPICE model www.vishay.com/doc?96603
2- Current rating
3- B = SMB
4- Q = Schottky “Q” series
5- Voltage rating (100 = 100 V)
1- Vishay Semiconductors product
Device code
51 32 4 6
VS- 10 B Q 100 -M3
- Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
6
Legal Disclaimer Notice
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Revision: 01-Jan-2019 1Document Number: 91000
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