PD - 97596A IRFHS8342PbF HEXFET(R) Power MOSFET VDS 30 V VGS max 20 V RDS(on) max 16.0 m (@VGS = 10V) T OP VIEW D 1 4.2 (@VGS = 4.5V) ID (@Tc(Bottom) = 25C) 8.5 D D S G 3 G 5 D nC d D D D 2 Qg(typical) D 6 D 4 S D S S 2mm x 2mm PQFN A Applications * Control MOSFET for Buck Converters * System/Load Switch Features and Benefits Features Low RDSon ( 16.0m) Low Thermal Resistance to PCB ( 13C/W) Low Profile ( 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number Package Type IRFHS8342TRPBF IRFHS8342TR2PBF PQFN 2mm x 2mm PQFN 2mm x 2mm Resulting Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 400 Tape and Reel Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC(Bottom) = 25C ID @ TC(Bottom)= 70C ID @ TC(Bottom) = 25C IDM PD @TA = 25C PD @TA = 70C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Notes through www.irf.com f f c f Max. 30 20 8.8 Units V d 7.1 19 15 8.5 d d d 76 2.1 1.3 0.02 -55 to + 150 A W W/C C are on page 2 1 11/23/10 IRFHS8342PbF Static @ TJ = 25C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 30 --- --- Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 22 13 --- 16 VGS(th) VGS(th) IDSS Gate Threshold Voltage --- 1.35 20 1.8 25 2.35 Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current --- --- --- -5.8 --- --- --- 1.0 150 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage --- --- --- --- 100 -100 nA gfs Qg Qg Qgs Forward Transconductance Total Gate Charge 18 --- --- 4.2 --- --- S nC Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge --- --- --- 8.7 1.5 1.3 --- --- --- VDS = 10V, ID = 8.5A VGS = 4.5V, VDS = 15V, ID = 8.5A VDS = 15V nC VGS = 10V ID = 8.5A (See Fig. 6 & 16) Gate Resistance Turn-On Delay Time --- --- 1.9 5.9 --- --- Rise Time Turn-Off Delay Time --- --- 15 5.2 --- --- Fall Time Input Capacitance Output Capacitance --- --- --- 5.0 600 100 --- --- --- Reverse Transfer Capacitance --- 46 --- Min. Typ. BVDSS VDSS/TJ RDS(on) Qgd RG td(on) tr td(off) tf Ciss Coss Crss Max. Units V Conditions VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA VGS = 10V, ID = 8.5A m VGS = 4.5V, ID = 6.8A V VDS = VGS, ID = 25A mV/C VDS = 24V, VGS = 0V A VDS = 24V, VGS = 0V, TJ = 125C ed e VGS = 20V VGS = -20V d d VDD = 15V, VGS = 4.5V ns pF d ID = 8.5A RG=1.8 d e See Fig.17 VGS = 0V VDS = 25V = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton --- c (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- Max. Units 8.5 d --- --- 76 --- --- --- 11 1.0 17 Conditions D MOSFET symbol G A showing the integral reverse V ns p-n junction diode. TJ = 25C, IS = 8.5A , VGS = 0V TJ = 25C, IF = 8.5A , VDD = 13V di/dt = 330 A/s --- 13 20 nC Time is dominated by parasitic Inductance S d d e e Thermal Resistance RJC (Bottom) RJC (Top) RJA RJA Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient (<10s) g g f f Typ. --- --- --- --- Max. 13 90 60 42 Units C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Current limited by package. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board R is measured at TJ of approximately 90C. 2 www.irf.com IRFHS8342PbF 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 7.0V 5.0V 4.5V 3.5V 3.3V 2.8V 2.5V 1 2.5V BOTTOM 10 2.5V 60s PULSE WIDTH 1 0.1 0.1 1 10 0.1 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(A) 60s PULSE WIDTH Tj = 150C Tj = 25C TJ = 150C 10 TJ = 25C VDS = 15V 60s PULSE WIDTH 1.0 ID = 8.5A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1000 Ciss Coss 100 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 7.0V 5.0V 4.5V 3.5V 3.3V 2.8V 2.5V Crss ID= 8.5A 12 10 VDS = 24V VDS = 15V VDS = 6.0V 8 6 4 2 0 10 0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 2 4 6 8 10 12 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFHS8342PbF 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 TJ = 150C 10 TJ = 25C 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 100sec 10 1 Tc = 25C Tj = 150C Single Pulse VGS = 0V 0.1 10msec Limited by Wire Bond 1msec DC 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.1 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 20 2.2 VGS(th), Gate threshold Voltage (V) LIMITED BY PACKAGE ID, Drain Current (A) 16 12 8 4 0 25 50 75 100 125 2.0 ID = 25A 1.8 1.6 1.4 1.2 1.0 150 -75 -50 -25 TC, Case Temperature (C) 0 25 50 75 100 125 150 TJ , Temperature ( C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) C/W 100 10 D = 0.50 0.20 0.10 0.05 1 0.02 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 35 ( ) RDS(on), Drain-to -Source On Resistance m RDS(on), Drain-to -Source On Resistance (m) IRFHS8342PbF ID = 8.5A 30 25 20 TJ = 125C 15 10 TJ = 25C 5 0 5 10 15 20 30 Vgs = 4.5V 25 20 15 Vgs = 10V 10 5 0 10 20 30 40 50 60 70 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 600 Single Pulse Power (W) 500 400 300 200 100 0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Fig 14. Typical Power vs. Time D.U.T Driver Gate Drive + - P.W. + * D.U.T. ISD Waveform Reverse Recovery Current + RG * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs www.irf.com 5 IRFHS8342PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 VGS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width 1 s Duty Factor 0.1 Fig 17a. Switching Time Test Circuit 6 Qgodr Fig 16b. Gate Charge Waveform Fig 16a. Gate Charge Test Circuit VDS Qgd 10% VGS td(on) tr td(off) tf Fig 17b. Switching Time Waveforms www.irf.com IRFHS8342PbF PQFN 2x2 Outline Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 2x2 Outline Part Marking 8342 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFHS8342PbF PQFN 2x2 Outline Tape and Reel 8 www.irf.com IRFHS8342PbF Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F PQFN 2mm x 2mm guidelines ) MS L1 (per JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/2010 www.irf.com 9