11/23/10
IRFHS8342PbF
HEXFET® Power MOSFET
Notes through are on page 2
PD - 97596A
Features and Benefits
www.irf.com 1
Applications
• Control MOSFET for Buck Converters
• System/Load Switch
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C Power Dissipation
f
P
D
@T
A
= 70°C Power Dissipation
f
Linear Derating Factor
f
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
8.8
d
15
d
76
±20
30
7.1
19
d
8.5
d
-55 to + 150
2.1
0.02
1.3
Note
Form Quantit
y
IRFHS8342TRPBF PQFN 2mm x 2mm Ta
p
e and Reel 4000
IRFHS8342TR2PBF PQFN 2mm x 2mm Ta
p
e and Reel 400
Orderable part number Package Type Standard Pac
k
2mm x 2mm PQFN
Features Resultin
g
Benefits
Low R
DSon
(≤ 16.0mΩ) Lower Conduction Losses
Low Thermal Resistance to PCB (≤ 13°C/W) Enable better thermal dissipation
Low Profile (≤ 1.0 mm) results in Increased Power Density
Compatible with Existing Surface Mount Techniques Easier Manufacturin
g
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Consumer Qualification Increased Reliability
G
D
D
S
D
D
S
G3S
D2
D1
4S
5D
6D
TOP VIEW
D
D
V
DS
30 V
V
GS
max
±20 V
R
DS(on) max
(@V
GS
= 10V)
16.0 mΩ
Q
g(typical)
(@V
GS
= 4.5V)
4.2 nC
I
D
(@T
c(Bottom)
= 25°C)
8.5
d
A
IRFHS8342PbF
2www.irf.com
D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Rθ is measured at TJ of approximately 90°C.
Th
erma
l R
es
i
s
t
ance
Parameter Typ. Max. Units
R
θJC
(Bottom) Junction-to-Case
g
––– 13
R
θJC
(Top) Junction-to-Case
g
––– 90 °C/W
R
θJA
Junction-to-Ambient
f
––– 60
R
θJA
Junction-to-Ambient (<10s)
f
––– 42
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 13 16
––– 20 25
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 18 ––– ––– S
Q
g
Total Gate Charge ––– 4.2 ––– nC
Q
g
Total Gate Charge ––– 8.7 ––– V
DS
= 15V
Q
gs
Gate-to-Source Charge ––– 1.5 –––
Q
gd
Gate-to-Drain Charge ––– 1.3 –––
R
G
Gate Resistance ––– 1.9 ––– Ω
t
d(on)
Turn-On Delay Time ––– 5.9 –––
t
r
Rise Time –––15–––
t
d(off)
Turn-Off Delay Time ––– 5.2 –––
t
f
Fall Time ––– 5.0 –––
C
iss
Input Capacitance ––– 600 –––
C
oss
Output Capacitance ––– 100 –––
C
rss
Reverse Transfer Capacitance ––– 46 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
Bod
Diode
c
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 11 17 ns
Q
rr
Reverse Recovery Charge ––– 13 20 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= 25μA
V
GS
= 4.5V, I
D
= 6.8A
e
mΩ
V
DD
= 15V, V
GS
= 4.5V
e
V
GS
= 4.5V, V
DS
= 15V, I
D
= 8.5A
d
R
G
=1.8Ω
V
DS
= 10V, I
D
= 8.5A
d
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 8.5A
d
(See Fig. 6 & 16)
I
D
= 8.5A
d
V
GS
= 0V
V
DS
= 25V
V
DS
= 24V, V
GS
= 0V
T
J
= 25°C, I
F
= 8.5A
d
, V
DD
= 13V
di/dt = 330 A/μs
e
T
J
= 25°C, I
S
= 8.5A
d
, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
Conditions
See Fig.17
ƒ = 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.5A
ed
––– ––– 76
––– ––– 8.5
d
MOSFET symbol
nA
ns
A
pF
nC V
GS
= 10V
V
GS
= 20V
V
GS
= -20V
IRFHS8342PbF
www.irf.com 3
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10V
7.0V
5.0V
4.5V
3.5V
3.3V
2.8V
BOTTOM 2.5V
≤60μs PULSE WIDTH
Tj = 150°C
2.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10V
7.0V
5.0V
4.5V
3.5V
3.3V
2.8V
BOTTOM 2.5V
≤60μs PULSE WIDTH
Tj = 25°C
2.5V
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 8.5A
VGS = 10V
2.0 3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
1.0
10
100
ID, Drain-to-Source Current
(A)
TJ = 25°C
TJ = 150°C
VDS = 15V
≤60μs PULSE WIDTH
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
024681012
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 8.5A
IRFHS8342PbF
4www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VGS(th), Gate threshold Voltage (V)
ID = 25μA
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
DC
Limited by
Wire Bond
25 50 75 100 125 150
TC, Case Temperature (°C)
0
4
8
12
16
20
ID, Drain Current (A)
LIMITED BY PACKAGE
IRFHS8342PbF
www.irf.com 5
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 14. Typical Power vs. Time
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Time (sec)
0
100
200
300
400
500
600
Single Pulse Power (W)
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
5
10
15
20
25
30
35
RDS(on)
, Drain-to -Source On Resistance (
mΩ)
ID = 8.5A
TJ = 125°C
TJ = 25°C
010 20 30 40 50 60 70
ID, Drain Current (A)
5
10
15
20
25
30
RDS(on), Drain-to -Source On Resistance (
mΩ)
Vgs = 4.5V
Vgs = 10V
IRFHS8342PbF
6www.irf.com
Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)
trtf
Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
1K
VCC
DUT
0
L
S
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
IRFHS8342PbF
www.irf.com 7
PQFN 2x2 Outline Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
PQFN 2x2 Outline Part Marking
8342
IRFHS8342PbF
8www.irf.com
PQFN 2x2 Outline Tape and Reel
IRFHS8342PbF
www.irf.com 9
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/2010
Data and specifications subject to change without notice.
MS L 1
(per JEDEC J-S T D-020D
†††
)
RoHS compliant Yes
PQFN 2mm x 2mm
Qualification information
†
Moisture Sensitivity Level
Qualification level Cons umer
††
(per JEDEC JESD47F
†††
guidelines )