SILICON PLASTIC POWER TRANSISTOR
PNP BD242A/B/C
3A 40W
Technical Data
…designed for use in general-purpose switching and amplifier applications.
F Collector-Emitter Saturation Voltage-
VCE=1.2Vdc(Max)@IC=3Adc
F Collector-Emitter Sustaining Voltage-
VCEO(sus)=100Vdc(Min)
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol BD242A BD242B BD242C Unit
Collector- Emitter Voltage V CEO 60 80 100 Vdc
Collector – Emitter Voltage V CES 70 90 115 Vdc
Emitter Base Voltage V EB 5 Vdc
Collector Current – Continuos
Peak I C3
5Adc
Base Current I B1 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD 40
0.32 Watts
W/°C
Operating and Storage junction
Temperature Range Tj,Tstg -65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R thjc 3.125 °C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage(1)
[ Ic =30 mAdc, IB = 0 ] BD242A
BD242B
BD242C
V
CEO(sus)
60
80
100
Vdc
Collector Cutoff Current
[ VCE = 30 Vdc, IB = 0 ] BD242A
[V
CE=60Vdc,IB=0] BD242B,BD242C
ICE0 0.3
0.3
mAdc
Collector Cutoff Current
[VCE=60Vdc, VBE =0] BD242A
[VCE=80Vdc, VBE =0] BD242B
[VCE=100Vdc,VBE =0] BD242C
ICES 200
200
200
µAdc
Emitter Cutoff Current
[ VEB =5.0 Vdc , Ic = 0 ] IEBO 1 mAdc
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 1.0Adc , VCE = 4.0 Vdc ]
[ Ic = 3Adc , VCE = 4.0 Vdc ]
hFE 25
10
Collector-Emitter Saturation Voltage
[ Ic = 3Adc , IB =600mAdc ] VCE(sat) 1.2 Vdc
Base-Emitter on Voltage
[ Ic =3 Adc , VCE= 4V V
BE(on)
1.8 Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[Ic=0.5Adc,VCE=10Vdc,ftest=1.0 MHz ] fT3 MHz
Small-Signal Current Gain
[ IC=0.5 Adc, VCE=10 Vdc, f=1kHz] hfe 20
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
