TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 DEVICES LEVELS 2N6300 2N6301 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol 2N6300 2N6301 Unit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Base Current IB 120 mAdc Collector Current IC 8.0 Adc PT 75 32 W Tj, Tstg -55 to +200 C Total Power Dissipation @ TC = +0C (1) @ TC = +100C Operating & Storage Junction Temperature Range Note: 1. TO-66 (TO-213AA) Derate linearly 0.428W/C above TC > 0C ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 80 Max. Unit OFF CHARACTERTICS Collector-Emitter Voltage IC = 100mAdc 2N6300 2N6301 Collector-Emitter Cutoff Current VCE = 30Vdc VCB = 40Vdc 2N6300 2N6301 ICEO 0.5 0.5 mAdc Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = -1.5Vdc VCE = 80Vdc, VBE = -1.5Vdc 2N6300 2N6301 ICEX 0.5 0.5 mAdc IEBO 2.0 mAdc Emitter-Base Cutoff Current VEB = 5.0Vdc T4-LDS-0171 Rev. 1 (101129) Vdc Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. hFE 500 750 18,000 Unit (3) ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 1.0Adc, VCE = 3.0Vdc IC = 4.0Adc, VCE = 3.0Vdc IC = 8.0Adc, VCE = 3.0Vdc 100 Collector-Emitter Saturation Voltage IC = 4.0Adc, IB = 16mAdc IC = 8.0Adc, IB = 80mAdc VCE(sat) 2.0 3.0 Vdc Base-Emitter Saturation Voltage IC = 8.0Adc, IB = 80mAdc VBE(sat) 4.0 Vdc Base-Emitter Voltage IC = 4.0Adc, VCE = 3.0Vdc VBE(on) 2.8 Vdc Min. Max. Unit 25 350 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 3.0Adc, VCE = 3.0Vdc, f = 1.0MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 3.0Adc, VCE = 3.0Vdc, f = 1.0KHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz Symbol |hfe| hfe 300 200 pF Max. Unit t on 2.0 s t off 8.0 s Cobo SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VCC = 30Vdc; IC = 4.0Adc; IB1 = 16mAdc Turn-Off Time VCC = 30Vdc; IC = 4.0Adc; IB1 = IB2 = 16mAdc Symbol Min. SAFE OPERATING AREA DC Test TC = 25C, 1 cycle, t = 1.0s Test 1 VCE = 8.0Vdc, IC = 8.0Adc Test 2 VCE = 20Vdc, IC = 2.0Adc Test 3 VCE = 60Vdc, IC = 100mAdc VCE = 80Vdc, IC = 100mAdc 2N6300 2N6301 (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0171 Rev. 1 (101129) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PACKAGE DIMENSIONS Symbol CD CH HT HR HR1 LD LL L1 MHD MHS PS PS1 S Dimensions Inches Millimeters Min Max Min Max .620 15.75 .250 .340 6.35 8.64 .050 .075 1.27 1.91 .350 8.89 .115 .145 2.92 3.68 .028 .034 0.71 0.86 .360 .500 9.14 12.70 .050 1.27 .142 .152 3.61 3.86 .958 .962 24.33 24.43 .190 .210 4.83 5.33 .095 .105 2.41 2.66 .570 .590 14.48 14.99 Notes 3 3 6 5, 9 5 5, 9 7 4 4 4 NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 Body contour is optional within zone defined by CD. 4 These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement will be made at seating plane. 5 Both terminals. 6 At both ends. 7 Two holes. 8 The collector shall be electrically connected to the case. 9 LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1. 10 In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO-66). T4-LDS-0171 Rev. 1 (101129) Page 3 of 3