Am29BL162C Data Sheet -XO\ 7KHIROORZLQJGRFXPHQWVSHFLILHV6SDQVLRQPHPRU\SURGXFWVWKDWDUHQRZRIIHUHGE\ERWK$GYDQFHG 0LFUR'HYLFHVDQG)XMLWVX$OWKRXJKWKHGRFXPHQWLVPDUNHGZLWKWKHQDPHRIWKHFRPSDQ\WKDWRULJ LQDOO\ GHYHORSHG WKHVSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EHRIIHUHG WR FXVWRPHUVRIERWK $0' DQG )XMLWVX Continuity of Specifications 7KHUHLVQRFKDQJHWRWKLVGDWDVKHHWDVDUHVXOWRIRIIHULQJWKHGHYLFHDVD6SDQVLRQSURGXFW$Q\ FKDQJHVWKDWKDYHEHHQPDGHDUHWKHUHVXOWRIQRUPDOGDWDVKHHWLPSURYHPHQWDQGDUHQRWHGLQWKH GRFXPHQWUHYLVLRQVXPPDU\ZKHUHVXSSRUWHG)XWXUHURXWLQHUHYLVLRQVZLOORFFXUZKHQDSSURSULDWH DQGFKDQJHVZLOOEHQRWHGLQDUHYLVLRQVXPPDU\ Continuity of Ordering Part Numbers $0'DQG)XMLWVXFRQWLQXHWRVXSSRUWH[LVWLQJSDUWQXPEHUVEHJLQQLQJZLWK$PDQG0%07RRUGHU WKHVHSURGXFWVSOHDVHXVHRQO\WKH2UGHULQJ3DUW1XPEHUVOLVWHGLQWKLVGRFXPHQW For More Information 3OHDVH FRQWDFW \RXU ORFDO $0' RU )XMLWVX VDOHV RIILFH IRU DGGLWLRQDO LQIRUPDWLRQ DERXW 6SDQVLRQ PHPRU\VROXWLRQV 3XEOLFDWLRQ1XPEHU 5HYLVLRQ ) $PHQGPHQW ,VVXH'DWH 1RYHPEHU Am29BL162C 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS 32 words sequential with wrap around (linear 32), bottom boot One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors Single power supply operation -- Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors 20-year data retention CFI (Common Flash Interface) compliant -- Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices Compatibility with JEDEC standards -- Pinout and software compatible with singlepower supply Flash -- Superior inadvertent write protection Read access times Burst access times as fast as 17 ns at industrial temperature range (18 ns at extended temperature range) Initial/random access times as fast as 65 ns Alterable burst length via BAA# pin Power dissipation (typical) -- Burst Mode Read: 15 mA @ 25 MHz, 20 mA @ 33 MHz, 25 mA @ 40 MHz -- Program/Erase: 20 mA -- Standby mode, CMOS: 3 A 5 V-tolerant data, address, and control signals Sector Protection -- Implemented using in-system or via programming equipment -- Temporary Sector Unprotect feature allows code changes in previously locked sectors Unlock Bypass Program Command -- Reduces overall programming time when issuing multiple program command sequences -- Backward-compatible with AMD Am29LVxxx and Am29Fxxx flash memories: powers up in asynchronous mode for system boot, but can immediately be placed into burst mode Data# Polling and toggle bits -- Provides a software method of detecting program or erase operation completion Ready/Busy# pin (RY/BY#) -- Provides a hardware method of detecting program or erase cycle completion Erase Suspend/Erase Resume -- Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation Hardware reset pin (RESET#) -- Hardware method to reset the device for reading array data Package Option -- 56-pin SSOP Embedded Algorithms -- Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors -- Embedded Program algorithm automatically writes and verifies data at specified addresses Minimum 1 million erase cycle guarantee per sector This Data Sheet states AMD's current specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 22142 Rev: F Amendment/+5 Issue Date: November 22, 2002 Refer to AMD's Website (www.amd.com) for the latest information. GENERAL DESCRIPTION The Am29BL162C is a 16 Mbit, 3.0 Volt-only burst mode Flash memory devices organized as 1,048,576 words. The device is offered in a 56-pin SSOP package. These devices are designed to be programmed in-system with the standard system 3.0-volt VCC supply. A 12.0-volt VPP or 5.0 VCC is not required for program or erase operations. The device can also be programmed in standard EPROM programmers. The device offers access times of 65, 70, 90, and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Burst Mode Features The Am29BL162C offers a Linear Burst mode--a 32 word sequential burst with wrap around--in a bottom boot configuration only. This devices require additional control pins for burst operations: Load Burst Address (LBA#), Burst Address Advance (BAA#), and Clock (CLK). This implementation allows easy interface with minimal glue logic to a wide range of microprocessors/microcontrollers for high performance read operations. AMD Flash Memory Features Each device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The I/O and control signals are 5V tolerant. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. AMD's Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm--an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. 2 Am29BL162C November 22, 2002 TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9 Table 1. Device Bus Operations .......................................................9 Requirements for Reading Array Data Array in Asynchronous (Non-Burst) Mode ................................................................... 10 Requirements for Reading Array Data in Synchronous (Burst) Mode ........................................................................... 10 Burst Suspend/Burst Resume Operations.............................. 11 IND# End of Burst Indicator .................................................... 11 Writing Commands/Command Sequences ............................ 11 Program and Erase Operation Status .................................... 11 Standby Mode ........................................................................ 11 Automatic Sleep Mode ........................................................... 11 RESET#: Hardware Reset Pin ............................................... 11 Output Disable Mode .............................................................. 12 Table 2. Sector Address Table ........................................................12 Autoselect Mode..................................................................... 13 Table 3. Am29BL162C Autoselect Codes (High Voltage Method) ..13 Sector Protection/Unprotection ............................................... 13 Figure 1. In-System Sector Protect/Unprotect Algorithms .............. 14 Temporary Sector Unprotect .................................................. 15 Figure 2. Temporary Sector Unprotect Operation........................... 15 Hardware Data Protection . . . . . . . . . . . . . . . . . . 15 Low VCC Write Inhibit .............................................................. 15 Write Pulse "Glitch" Protection ............................................... 15 Logical Inhibit .......................................................................... 15 Power-Up Write Inhibit ............................................................ 15 Common Flash Memory Interface (CFI) . . . . . . . 16 Table 4. CFI Query Identification String ..........................................16 Table 5. System Interface String .....................................................16 Table 6. Device Geometry Definition ..............................................17 Table 7. Primary Vendor-Specific Extended Query ........................17 Command Definitions . . . . . . . . . . . . . . . . . . . . . 18 Reading Array Data in Non-burst Mode ................................. 18 Reading Array Data in Burst Mode ......................................... 18 Figure 3. Burst Mode Read with 40 MHz CLK, 65 ns tIACC, 18 ns tBACC Parameters....................................................... 19 Figure 4. Burst Mode Read with 25 MHz CLK, 70 ns tIACC, 24 ns tBACC Parameters....................................................... 19 Reset Command ..................................................................... 19 Autoselect Command Sequence ............................................ 19 Program Command Sequence ............................................... 20 Unlock Bypass Command Sequence ..................................... 20 Figure 5. Program Operation .......................................................... 21 Chip Erase Command Sequence ........................................... 21 Sector Erase Command Sequence ........................................ 21 Figure 6. Erase Operation............................................................... 22 Erase Suspend/Erase Resume Commands ........................... 22 Asynchronous Mode ............................................................... 22 Burst Mode ............................................................................. 22 General ................................................................................... 22 Command Definitions ............................................................. 24 November 22, 2002 Table 8. Am29BL162C Command Definitions ............................... 24 Write Operation Status . . . . . . . . . . . . . . . . . . . . 25 DQ7: Data# Polling ................................................................. 25 Figure 7. Data# Polling Algorithm .................................................. 25 RY/BY#: Ready/Busy# ............................................................ 26 DQ6: Toggle Bit I .................................................................... 26 DQ2: Toggle Bit II ................................................................... 26 Reading Toggle Bits DQ6/DQ2 ............................................... 26 DQ5: Exceeded Timing Limits ................................................ 27 DQ3: Sector Erase Timer ....................................................... 27 Figure 8. Toggle Bit Algorithm........................................................ 27 Table 9. Write Operation Status ..................................................... 28 Absolute Maximum Ratings . . . . . . . . . . . . . . . . 29 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 29 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 30 Figure 11. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) .............................................................................. 31 Figure 12. Typical ICC1 vs. Frequency ........................................... 31 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Figure 13. Test Setup..................................................................... 32 Table 10. Test Specifications ......................................................... 32 Key to Switching Waveforms .................................................. 32 Figure 14. Input Waveforms and Measurement Levels ................. 32 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 33 Figure 15. Conventional Read Operations Timings ....................... 35 Figure 16. Burst Mode Read .......................................................... 35 Hardware Reset (RESET#) .................................................... 36 Figure 17. RESET# Timings .......................................................... 36 Erase/Program Operations ..................................................... 37 Figure 18. Program Operation Timings.......................................... Figure 19. Chip/Sector Erase Operation Timings .......................... Figure 20. Data# Polling Timings (During Embedded Algorithms). Figure 21. Toggle Bit Timings (During Embedded Algorithms)...... Figure 22. DQ2 vs. DQ6 for Erase and Erase Suspend Operations ............................................................ Figure 23. Temporary Sector Unprotect Timing Diagram .............. Figure 24. Sector Protect/Unprotect Timing Diagram .................... 38 39 40 40 41 41 42 Alternate CE# Controlled Erase/Program Operations ............ 43 Figure 25. Alternate CE# Controlled Write Operation Timings ...... 44 Erase and Programming Performance . . . . . . . 45 Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 45 SSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 45 Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 46 SSO056--56-Pin Shrink Small Outline Package .................... 46 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 47 Revision A (September 1998) ................................................. 47 Revision B (December 1998) .................................................. 47 Revision C (December 1998) ................................................. 47 Revision D (May 17, 1999) ..................................................... 47 Revision D+1 (July 2, 1999) ................................................... 47 Revision E (November 2, 1999) .............................................. 47 Revision F (June 20, 2000) ..................................................... 48 Revision F+1 (November 21, 2000) ........................................ 48 Revision F+2 (July 22, 2002) .................................................. 48 Revision F+3 (August 19, 2002) ............................................. 48 Am29BL162C 3 Revision F+4 (September 12, 2002) ....................................... 48 4 Revision F+5 (November 22, 2002) ........................................ 48 Am29BL162C November 22, 2002 PRODUCT SELECTOR GUIDE Family Part Number Speed Option Am29BL162C Regulated Voltage Range: VCC =3.0-3.6 V 65R Temperature Range: Industrial (I), Extended (E) I 70R 90R 120R I, E I, E I, E E Max access time, ns (tACC) 65 70 90 120 Max CE# access time, ns (tCE) 65 70 90 120 24 26 26 Max burst access time, ns (tBACC) 17 18 Note: 1. See "AC Characteristics" for full specifications. BLOCK DIAGRAM DQ0-DQ15 RY/BY# IND# VCC VSS Sector Switches Input/Output Buffers RESET# IND# Buffer Erase Voltage Generator WE# State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic CE# OE# STB Data Latch Timer Address Latch VCC Detector Burst State Counter November 22, 2002 Burst Address Counter X-Decoder Y-Gating Cell Matrix A3, A4 A0-A4 A0-A19 LBA# BAA# CLK Y-Decoder STB A0-A2 A3, A4 A0-A2 Am29BL162C 5 CONNECTION DIAGRAMS WE# RESET# RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# NC VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 VSS CLK BAA# 6 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56-Pin SSOP Am29BL162C 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 LBA# VCC NC A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 NC NC VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC VCC IND# NC November 22, 2002 PIN CONFIGURATION A0-A19 = 20 addresses BAA# DQ0-DQ15 = 16 data inputs/outputs CE# = Chip Enable Input. This signal shall be asynchronous relative to CLK for the burst mode. OE# = Output Enable Input. This signal shall be asynchronous relative to CLK for the burst mode. WE# = Write enable. This signal shall be asynchronous relative to CLK for the burst mode. VSS = Device ground NC = No connect. Pin not connected internally RY/BY# = Ready Busy output CLK = Clock Input that can be tied to the system or microprocessor clock and provides the fundamental timing and internal operating frequency. CLK latches input addresses in conjunction with LBA# input and increments the burst address with the BAA# input. LBA# = Load Burst Address input. Indicates that the valid address is present on the address inputs. = Burst Address Advance input. Increments the address during the burst mode operation BAA# Low enables the burst mode Flash device to read from the next word when gated with the rising edge of the clock. Data becomes available tBACC ns of burst access time after the rising edge of the clock BAA # High prevents the rising edge of the clock from advancing the data to the next word output. The output data remains unchanged. IND# = Highest burst counter address reached. IND# is low at the end of a 32-word burst sequence (when word Da + 31 is output). The output will wrap around to Da on the next CLK cycle (with BAA# low). RESET# = Hardware reset input Note: The address, data, and control signals (RY/BY#, LBA, BAA, IND, RESET, OE#, CE#, and WE#) are 5 V tolerant. LOGIC SYMBOL 20 LBA# Low at the rising edge of the clock latches the address on the address inputs into the burst mode Flash device. Data becomes available tPACC ns of initial access time after the rising edge of the same clock that latches the address. LBA# High indicates that the address is not valid A0-A19 16 DQ0-DQ15 CLK CE# OE# WE# IND# RESET# LBA# RY/BY# BAA# November 22, 2002 Am29BL162C 7 ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the elements below. Am29BL162C B 65R Z I TEMPERATURE RANGE I = Industrial (-40C to +85C) E= Extended (-55C to +125C) PACKAGE TYPE Z= 56-Pin Shrink Small Outline Package (SSOP 056) SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE B= Bottom Sector DEVICE NUMBER/DESCRIPTION Am29BL162C 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Burst Mode Flash Memory Valid Combinations Valid Combinations Am29BL162CB-65R ZI, ZE Am29BL162CB-70R ZI, ZE Am29BL162CB-90R ZI, ZE Am29BL162CB-120R ZI, ZE Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. For information on full voltage range options (2.7-3.6 V), please contact AMD. 8 Am29BL162C November 22, 2002 DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches that store the commands, along with the address and data information needed to execute the command. The contents of the Table 1. register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Device Bus Operations CE# OE# WE# RESET# CLK LBA# BAA# Addresses (Note 1) Data (DQ0-DQ15) Read L L H H X X X AIN DOUT Write L H L H X X X AIN DIN VCC 0.3 V X X VCC 0.3 V X X X X HIGH Z Output Disable L H H H X X X HIGH Z HIGH Z Reset X X X L X X X X HIGH Z Sector Protect (Note 2) L H L VID X X X Sector Address, A6 = L, A1 = H, A0 = L DIN Sector Unprotect (Note 2) L H L VID X X X Sector Address, A6 = H, A1 = H, A0 = L DIN Temporary Sector Unprotect X X X VID X X X AIN HIGH Z Load Starting Burst Address L X H H L H AIN X Advance Burst to Next Address (no data presented on the data bus) L H H H H L X HIGH Z Advance Burst to Next address (appropriate data presented on the data bus) L L H H H L X Data Out DQ0-DQ15 Terminate Current Burst Read Cycle H X H H X X X HIGH Z Terminate Current Burst Read Cycle; Start New Burst Read Cycle L X H H L H AIN X Burst Suspend (all data is retained internally in the device) L H H H H H X HIGH Z Burst Resume (same data as Burst Suspend) L L H H H H X Data Out DQ0-DQ15 Burst Resume (incremented data from Burst Suspend) L L H H H L X Data Out DQ0-DQ15 Operation Standby Burst Read Operations X Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don't care. Notes: 1. Addresses are A19:A0. 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the "Sector Protection/Unprotection" section. November 22, 2002 Am29BL162C 9 Requirements for Reading Array Data Array in Asynchronous (Non-Burst) Mode To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (t C E ) is the delay from the stable addresses and stable CE# to valid data at the output pins. The output enable access time is the delay from the falling edge of OE# to valid data at the output pins (assuming the addresses have been stable for at least tACC-tOE time). The internal state machine is set for reading array data in the upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See "Reading Array Data in Non-burst Mode" for more information. Refer to the AC Read Operations table for timing specifications and to Figure 15 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Requirements for Reading Array Data in Synchronous (Burst) Mode The device offers fast 32-word sequential burst reads and is used to support microprocessors that implement an instruction prefetch queue, as well as large data transfers during system configuration. Three additional pins--Load Burst Address (LBA#), Burst Address Advance (BAA#), and Clock (CLK)-- allow interfacing to microprocessors and microcontrollers with minimal glue logic. Burst mode read is a synchronous operation tied to the rising edge of CLK. CE#, OE#, and WE# are asynchronous (relative to CLK). When the device is in asynchronous mode (after power-up or RESET# pulse), any signals on the CLK, 10 LBA#, and BAA# inputs are ignored. The device operates as a conventional flash device, as described in the previous section. To enable burst mode operation, the system must issue the Burst Mode Enable command sequence (see Table 8). After the device has entered the burst mode, the system must assert Load Burst Address (LBA#) low for one clock period, which loads the starting address into the device. The first burst data is available after the initial access time (tIACC) from the rising edge of the CLK that loads the burst address. After the initial access, subsequent burst data is available tBACC after each rising edge of CLK. The device increments the address at each rising edge of the clock cycles while BAA# is asserted low. The 5bit burst address counter is set to 00000b at the starting address. When the burst address counter is reaches 11111b, the device outputs the last word in the burst sequence, and outputs a low on IND#. If the system continues to assert BAA#, on the next CLK the device will output the data for the starting address--the burst address counter will have "wrapped around" to 00000b. For example, if the initial address is xxxx0h, the data order will be 0-1-2-3.....28-29-30-31-0-1...; if the initial address is xxxx2h, the data order will be 2-3-4-5.....2829-30-31-0-1-2-3...; if the initial address is xxxx8h, the data order will be 8-9-10-11.....30-31-0-1-2-3-4-5-6-78-9....; and so on. Data will be repeated if more than 32 clocks are supplied, and BAA# remains asserted low. A burst mode read operation is terminated using one of three methods: -- In the first method, CE# is asserted high. The device in this case remains in burst mode; asserting LBA# low terminates the previous burst read cycle and starts a new burst read cycle with the address that is currently valid. -- In the second method, the Burst Disable command sequence is written to the device. The device halts the burst operation and returns to the asynchronous mode. -- In the third method, RESET# is asserted low. All opertations are immediately terminated, and the device will revert to the asynchronous mode. Note that writing the reset command will not terminate the burst mode. Am29BL162C November 22, 2002 Burst Suspend/Burst Resume Operations The device offers Burst Suspend and Burst Resume operations. When both OE# and BAA# are taken high, the device removes ("suspends") the data from the outputs (because OE# is high), but "holds" the data internally. The device resumes burst operation when either OE# and/or BAA# is asserted low. Asserting the OE# only causes the device to present the same data that was held during the Burst Suspend operation. As long as BAA# is high, the device will continue to output that word of data. Asserting both OE# and BAA# low resumes the burst operation, and on the next rising edge of CLK, increments the counter and outputs the next word of data. IND# End of Burst Indicator The IND# output signal goes low when the device is ouputting the last word of a 32-word burst sequence (word Da+31). When the starting address was loaded with LBA#, the 5-bit burst address counter was set to 00000b. The counter increments to 11111b on the 32nd word in the burst sequence. If the system continues to assert BAA# low, on the next CLK the device will output the starting address data (Da). The burst address counter will be again set to 00000b, and will have "wrapped around." Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word, instead of four. The "Program Command Sequence" section has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 indicates the address space that each sector occupies. A "sector address" consists of the address bits required to uniquely select a sector. The "Command Definitions" section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7-DQ0. Standard read cycle timings apply in this mode. Refer to the "Autoselect Mode" and "Reset Command" sections for more information. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The "AC November 22, 2002 Characteristics" section contains timing specification tables and timing diagrams for write operations. Program and Erase Operation Status During an erase or program operation, the system may check the status of the operation by reading the status bits on DQ7-DQ0. Standard read cycle timings and ICC read specifications apply. Refer to "Write Operation Status" for more information, and to "AC Characteristics" for timing diagrams. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. In the DC Characteristics table, ICC3 and ICC4 represents the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. I CC4 in the DC Characteristics table represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the system drives the RESET# pin to VIL for at least a period of tRP, the device immediately terminates any operation in progress, tristates all data output pins, and ignores all read/write attempts for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Am29BL162C 11 Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS0.3 V, the standby current will be greater. thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is "1"), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. Refer to the AC Characteristics tables for RESET# parameters and to Figure 17 for the timing diagram. Output Disable Mode If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Table 2. Sector Address Table 12 Sector Sector Size A19 A18 A17 A16 A15 A14 A13 A12 Address Range SA0 8 Kwords 0 0 0 0 0 0 0 X 00000h-01FFFh SA1 4 Kwords 0 0 0 0 0 0 1 0 02000h-02FFFh SA2 4 Kwords 0 0 0 0 0 0 1 1 03000h-03FFFh SA3 112 Kwords 0 0 0 SA4 128 Kwords 0 0 1 X X X X X 20000h-3FFFFh SA5 128 Kwords 0 1 0 X X X X X 40000h-5FFFFh SA6 128 Kwords 0 1 1 X X X X X 60000h-7FFFFh SA7 128 Kwords 1 0 0 X X X X X 80000h-9FFFFh SA8 128 Kwords 1 0 1 X X X X X A0000h-BFFFFh SA9 128 Kwords 1 1 0 X X X X X C0000h-DFFFFh SA10 128 Kwords 1 1 1 X X X X X E0000h-FFFFFh 00100-11111 Am29BL162C 04000h-1FFFFh November 22, 2002 Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7-DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (11.5 V to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in Table 1. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table 2). Table 1 shows the remaining address bits that are don't care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7-DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 8. This method does not require VID. See "Command Definitions" for details on using the autoselect mode. Table 3. Am29BL162C Autoselect Codes (High Voltage Method) A11 to A10 A9 A8 to A7 A6 A5 to A2 A1 A0 DQ15 to DQ0 CE# OE# WE# A19 to A12 Manufacturer ID: AMD L L H X X VID X L X L L 0001h Device ID: Am29BL162CB (Bottom Boot Block) L L H X X VID X L X L H 2203h Sector Protection Verification X L X H L 0001h (protected) L H SA VID X L X VID X L X H L 0000h (unprotected) H 0000h (non-burst mode) 0001h (burst mode) Description Burst Mode Status L L H X X VID X L X H L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don't care. Note: The autoselect codes may also be accessed in-system via command sequences. See Table 8. Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD's ExpressFlashTM Service. Contact an AMD representative for details. It is possible to determine whether a sector is protected or unprotected. See "Autoselect Mode" for details. Sector protection/unprotection can be implemented via two methods. November 22, 2002 The primary method requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the algorithms and Figure 24 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. The alternate method intended only for programming equipment requires VID on address pin A9 and OE#. This method is compatible with programmer routines written for earlier 3.0 volt-only AMD flash devices. Details on this method are provided in a supplement, publication number 22240. Contact an AMD representative to request a copy. Am29BL162C 13 START START Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address PLSCNT = 1 RESET# = VID Wait 1 s Temporary Sector Unprotect Mode No PLSCNT = 1 RESET# = VID Wait 1 s No First Write Cycle = 60h? First Write Cycle = 60h? Yes Yes Set up sector address No All sectors protected? Sector Protect: Write 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A6 = 1, A1 = 1, A0 = 0 Wait 150 s Increment PLSCNT Temporary Sector Unprotect Mode Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Reset PLSCNT = 1 Read from sector address with A6 = 0, A1 = 1, A0 = 0 Wait 15 ms Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 = 0 Increment PLSCNT No No PLSCNT = 25? Yes Yes No Yes Device failed PLSCNT = 1000? Protect another sector? No Yes Remove VID from RESET# Device failed Write reset command Sector Protect Algorithm Read from sector address with A6 = 1, A1 = 1, A0 = 0 Data = 01h? Sector Protect complete Set up next sector address No Data = 00h? Yes Last sector verified? No Yes Sector Unprotect Algorithm Remove VID from RESET# Write reset command Sector Unprotect complete Figure 1. In-System Sector Protect/Unprotect Algorithms 14 Am29BL162C November 22, 2002 Temporary Sector Unprotect HARDWARE DATA PROTECTION This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 2 shows the algorithm, and Figure 23 shows the timing diagrams, for this feature. The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 8 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets. Subsequent writes are ignored until VCC is greater than V LKO . The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. START RESET# = VID (Note 1) Perform Erase or Program Operations Write Pulse "Glitch" Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. RESET# = VIH Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected. Power-Up Write Inhibit 2. All previously protected sectors are protected once again. Figure 2. Temporary Sector Unprotect Operation November 22, 2002 If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. Am29BL162C 15 COMMON FLASH MEMORY INTERFACE (CFI) addresses given in Tables 4-7. To terminate reading CFI data, the system must write the reset command. The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 4-7. The system must write the reset command to return the device to the autoselect mode. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h, any time the device is ready to read array data. The system can read CFI information at the For further information, please refer to the CFI Specification and CFI Publication 100, available via the World Wide Web at http://www.amd.com/products/nvd/overview/cfi.html. Alternatively, contact an AMD representative for copies of these documents. To terminate reading CFI data, the system must write the reset command. Table 4. CFI Query Identification String Addresses Data Description 10h 11h 12h 0051h 0052h 0059h Query Unique ASCII string "QRY" 13h 14h 0002h 0000h Primary OEM Command Set 15h 16h 0040h 0000h Address for Primary Extended Table 17h 18h 0000h 0000h Alternate OEM Command Set (00h = none exists) 19h 1Ah 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) Table 5. System Interface String 16 Addresses Data Description 1Bh 0027h VCC Min. (write/erase) D7-D4: volt, D3-D0: 100 millivolt 1Ch 0036h VCC Max. (write/erase) D7-D4: volt, D3-D0: 100 millivolt 1Dh 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 0004h Typical timeout per single word write 2N s 20h 0000h Typical timeout for Min. size buffer write 2N s (00h = not supported) 21h 000Ah Typical timeout per individual block erase 2N ms 22h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 0005h Max. timeout for word write 2N times typical 24h 0000h Max. timeout for buffer write 2N times typical 25h 0004h Max. timeout per individual block erase 2N times typical 26h 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Am29BL162C November 22, 2002 Table 6. Addresses Device Geometry Definition Data Description N 27h 0015h Device Size = 2 byte 28h 29h 0001h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 0000h 0000h Max. number of bytes in multi-byte write = 2N (00h = not supported) 2Ch 0004h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 0000h 0000h 0040h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 0001h 0000h 0020h 0000h Erase Block Region 2 Information 35h 36h 37h 38h 0000h 0000h 0080h 0003h Erase Block Region 3 Information 39h 3Ah 3Bh 3Ch 0006h 0000h 0000h 0004h Erase Block Region 4 Information Table 7. Primary Vendor-Specific Extended Query Addresses Data 40h 41h 42h 0050h 0052h 0049h Query-unique ASCII string "PRI" 43h 0031h Major version number, ASCII 44h 0030h Minor version number, ASCII 45h 0000h Address Sensitive Unlock 0 = Required, 1 = Not Required 46h 0002h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 0001h Sector Protect 0 = Not Supported, X = Number of sectors in per group 48h 0001h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 0004h Sector Protect/Unprotect scheme 4Ah 0000h Simultaneous Operation 00 = Not Supported, 01 = Supported 4Bh 0003h Burst Mode Type 00 = Not Supported, 01 = 4 word Linear Burst, 02 = 8 Word linear Burst, 03 = 32 Word Linear Burst, 04 = 4 Word Interleave Burst 4Ch 0000h Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page November 22, 2002 Description Am29BL162C 17 COMMAND DEFINITIONS Reading Array Data in Burst Mode Writing specific address and data commands or sequences into the command register initiates device operations. Table 8 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. The device powers up in the non-burst mode. To read array data in burst mode, the system must write the four-cycle Burst Mode Enable command sequence (see Table 8). The device then enters burst mode. In addition to asserting CE#, OE#, and WE# control signals, burst mode operation requires that the system provide appropriate LBA#, BAA#, and CLK signals. For successful burst mode reads, the following events must occur (refer to Figures 3 and 4 for this discussion): All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams in the AC Characteristics section. Reading Array Data in Non-burst Mode The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See "Erase Suspend/Erase Resume Commands" for more information on this mode. The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high, or while in the autoselect mode. See the "Reset Command" section, next. See also "Requirements for Reading Array Data Array in Asynchronous (Non-Burst) Mode" in the "Key to Switching Waveforms" section for more information. The Read Operations table provides the read parameters, and Figure 15 shows the timing diagram. 18 1. The system asserts LBA# low, indicating to the device that a valid initial burst address is available on the address bus. LBA# must be kept low until at least the next rising edge of the CLK signal, upon which the device loads the initial burst address. 2. The system returns LBA# to a logic high. The device requires that the next rising edge of CLK occur with LBA# high for proper burst mode operation. Typically, the initial number of CLK cycles depends on the clock frequency and the rated speed of the device. 3. After the initial data has been read, the system asserts BAA# low to indicate it is ready to read the remaining burst read cycles. Each successive rising edge of the CLK signal then causes the flash device to increment the burst address and output sequential burst data. 4. When the device outputs the last word of data in the 32-word burst mode read sequence, the device outputs a logic low on the IND# pin. This indicates to the system that the burst mode read sequence is complete. 5. To exit the burst mode, the system must write the four-cycle Burst Mode Disable command sequence. The device will also exit the burst mode if powered down or if RESET# is asserted. The device will not exit the burst mode if the reset command is written. Am29BL162C November 22, 2002 Step 1 Step 2 25 ns Step 3 25 ns 25 ns 25 ns 25 ns CLK LBA# BAA# Da +1 Da Da +2 Data 65 ns 18 ns 18 ns OE# Figure 3. Burst Mode Read with 40 MHz CLK, 65 ns tIACC, 18 ns tBACC Parameters Step 1 Step 2 40 ns Step 3 40 ns 40 ns 40 ns 40 ns CLK LBA# BAA# Da Da +1 Da +2 Da +3 Data 70 ns 24 ns 24 ns 24 ns OE# Figure 4. Burst Mode Read with 25 MHz CLK, 70 ns tIACC, 24 ns tBACC Parameters Reset Command Writing the reset command to the device resets the device to reading array data. Address bits are don't care for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete. November 22, 2002 The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend). If DQ5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend). See "AC Characteristics" for parameters, and to Figure 17 for the timing diagram. Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. Table 8 shows the address and data requirements. Am29BL162C 19 This method is an alternative to that shown in Table 1, which is intended for PROM programmers and requires VID on address bit A9. The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence. A read cycle at address 00h retrieves the manufacturer code. A read cycle at address 01h returns the device code. A read cycle containing a sector address (SA) and the address 02h in word mode returns 0001h if that sector is protected, or 0000h if it is unprotected. Refer to Table 2 for valid sector addresses. A read cycle at address 03h returns 0000h if the device is in asynchronous mode, or 0001h if in synchronous (burst) mode. The system must write the reset command to exit the autoselect mode and return to reading array data. Program Command Sequence Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 8 shows the address and data requirements for the program command sequence. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. See "Write Operation Status" for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a 20 hardware reset immediately terminates the programming operation. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a "0" back to a "1". Attempting to do so may halt the operation and set DQ5 to "1," or cause the Data# Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still "0". Only erase operations can convert a "0" to a "1". Unlock Bypass Command Sequence The unlock bypass feature allows the system to program words to the device faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 8 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data 90h; the second cycle the data 00h. Addresses are don't care for both cycles. The device then returns to reading array data. Figure 5 illustrates the algorithm for the program operation. See the Erase/Program Operations table in "AC Characteristics" for parameters, and to Figure 18 for timing diagrams. Am29BL162C November 22, 2002 The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See "Write Operation Status" for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. START Write Program Command Sequence Figure 6 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in "AC Characteristics" for parameters, and to Figure 19 for timing diagrams. Data Poll from System Embedded Program algorithm in progress Verify Data? Sector Erase Command Sequence No Yes Increment Address No The device does not require the system to preprogram the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Last Address? Yes Programming Completed Note: See Table 8 for program command sequence. Figure 5. Program Operation Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 8 shows the address and data requirements for the chip erase command sequence. Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware reset during the chip erase operation immediately terminates the operation. The Chip Erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. November 22, 2002 Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. Table 8 shows the address and data requirements for the sector erase command sequence. After the command sequence is written, a sector erase time-out of 50 s begins. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 s, otherwise the last address and command might not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50 s, the system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to reading array data. The system must rewrite the command sequence and any additional sector addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out. (See the "DQ3: Sector Erase Timer" section.) The time-out begins from the rising edge of the final WE# pulse in the command sequence. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. Note that a hardware reset during the sector erase operation immediately terminates the operation. The Sector Erase command sequence should Am29BL162C 21 be reinitiated once the device has returned to reading array data, to ensure data integrity. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. (Refer to "Write Operation Status" for information on these status bits.) Figure 6 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the "AC Characteristics" section for parameters, and to Figure 19 for timing diagrams. ations behave normally in non-erasing sectors. However, Erase Suspend operation prevents the Flash device from entering Burst Mode. To enter Burst Mode either the Erase operation must be allowed to complete normally, or it can be prematurely terminated by issuing a Hardware Reset. Burst Mode While in Burst Mode the Erase Suspend command is ignored and the device continues to operate normally in Burst Mode. If Erase Suspend operation is required, then Burst Mode must be terminated and Asynchronous Mode initiated. General This command is valid only during the sector erase operation, including the 50 s time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the time-out period and suspends the erase operation. Addresses are "don't-cares" when writing the Erase Suspend command. START Write Erase Command Sequence Data Poll from System No When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 20 s to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. Embedded Erase algorithm in progress Data = FFh? Yes Erasure Completed Notes: 1. See Table 8 for erase command sequence. 2. See "DQ3: Sector Erase Timer" for more information. Figure 6. Erase Operation Erase Suspend/Erase Resume Commands The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The Erase Suspend command has a different effect depending on whether the Flash device is in Asynchronous Mode or Burst Mode. Asynchronous Mode The Erase Suspend command is only valid when the Flash device is in Asynchronous Mode. During Erase Suspend operation Asynchronous read/program oper- 22 After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (The device "erase suspends" all sectors selected for erasure.) Normal read and write timings and command definitions apply. Note that burst read is not available when the device is erase-suspended. Only asynchronous reads are allowed. Reading at any address within erase-suspended sectors produces status data on DQ7-DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erasesuspended. See "Write Operation Status" for information on these status bits. After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See "Write Operation Status" for more information. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to Am29BL162C November 22, 2002 the Erase Suspend mode, and is ready for another valid operation. See "Reset Command" for more information. Erase Suspend command can be written after the device has resumed erasing. The system must write the Erase Resume command (address bits are "don't care") to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another November 22, 2002 Am29BL162C 23 Command Definitions Cycles Table 8. Am29BL162C Command Definitions Bus Cycles (Notes 2-5) Second Third Fourth Addr Data Addr Data Addr Data 1 First Addr Data RA RD Reset (Note 7) Manufacturer ID Device ID, Bottom Boot Block 1 4 4 XXX 555 555 F0 AA AA 2AA 2AA 55 55 555 555 90 90 X00 X01 Sector Protect Verify (Note 9) 4 555 AA 2AA 55 555 90 (SA) X02 Burst Mode Status (Note 10) 4 555 AA 2AA 55 555 90 X03 CFI Query (Note 11) Program Unlock Bypass Unlock Bypass Program (Note 12) Unlock Bypass Reset (Note 13) Chip Erase Sector Erase Erase Suspend (Note 14) Erase Resume (Note 15) Burst Mode Burst Mode Enable Burst Mode Disable 1 4 3 2 2 6 6 1 1 55 555 555 XXX XXX 555 555 XXX XXX 98 AA AA A0 90 AA AA B0 30 2AA 2AA PA XXX 2AA 2AA 55 55 PD 00 55 55 555 555 A0 20 PA PD 555 555 80 80 555 555 AA AA 4 4 555 555 AA AA 2AA 2AA 55 55 555 555 C0 C0 XXX XXX 01 00 Autoselect (Note 8) Command Sequence (Note 1) Read (Note 6) Fifth Addr Data Sixth Addr Data 01 2203 0000 0001 0000 0001 2AA 2AA 55 55 555 SA 10 30 Legend: X = Don't care PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A19-A12 uniquely select any sector. Notes: 1. See Table 1 for description of bus operations. 10. The data is 00h if the device is in asynchronous mode and 01h if in synchronous (burst) mode. 2. All values are in hexadecimal. 3. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles. 4. Data bits DQ15-DQ8 are don't cares for unlock and command cycles. 11. Command is valid when device is ready to read array data or when device is in autoselect mode. 12. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 13. The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock bypass mode. 5. Address bits A19-A11 are don't cares for unlock and command cycles, unless SA or PA required. 6. No unlock or command cycles required when reading array data. 7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device is providing status data). 8. The fourth cycle of the autoselect command sequence is a read cycle. 14. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 15. The Erase Resume command is valid only during the Erase Suspend mode. 9. The data is 00h for an unprotected sector and 01h for a protected sector. See "Reset Command" for more information. 24 Am29BL162C November 22, 2002 WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 9 and the following subsections describe the functions of these bits. DQ7, RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first. Table 9 shows the outputs for Data# Polling on DQ7. Figure 7 shows the Data# Polling algorithm. START DQ7: Data# Polling Read DQ7-DQ0 Addr = VA The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the program or erase command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 s, then the device returns to reading array data. DQ7 = Data? No No When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ7- DQ0 on the following read cycles. This is because DQ7 may change asynchronously with DQ0-DQ6 while Output Enable (OE#) is asserted low. Figure 20, Data# Polling Timings (During Embedded Algorithms), in the "AC Characteristics" section illustrates this. November 22, 2002 DQ5 = 1? Yes Read DQ7-DQ0 Addr = VA During the Embedded Erase algorithm, Data# Polling produces a "0" on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a "1" on DQ7. This is analogous to the complement/true datum output described for the Embedded Program algorithm: the erase function changes all the bits in a sector to "1"; prior to this, the device outputs the "complement," or "0." The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 s, then the device returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. Yes DQ7 = Data? Yes No FAIL PASS Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for erasure. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = "1" because DQ7 may change simultaneously with DQ5. Am29BL162C Figure 7. Data# Polling Algorithm 25 RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. (The RY/BY# pin is not available on the 44-pin SO package.) If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode. Table 9 shows the outputs for RY/BY#. Figures 15, 17, 18 and 19 shows RY/BY# for read, reset, program, and erase operations, respectively. DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. (The system may use either OE# or CE# to control the read cycles.) When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 s, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on "DQ7: Data# Polling"). If a program address falls within a protected sector, DQ6 toggles for approximately 1 s after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. 26 Table 9 shows the outputs for Toggle Bit I on DQ6. Figure 8 shows the toggle bit algorithm in flowchart form, and the section "Reading Toggle Bits DQ6/DQ2" explains the algorithm. Figure 21 in the "AC Characteristics" section shows the toggle bit timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on "DQ2: Toggle Bit II". DQ2: Toggle Bit II The "Toggle Bit II" on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 9 to compare outputs for DQ2 and DQ6. Figure 8 shows the toggle bit algorithm in flowchart form, and the section "Reading Toggle Bits DQ6/DQ2" explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 21 shows the toggle bit timing diagram. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. Reading Toggle Bits DQ6/DQ2 Refer to Figure 8 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7-DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7-DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system Am29BL162C November 22, 2002 must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 8). START Read Byte (DQ0-DQ7) Address = VA Read Byte (DQ0-DQ7) Address = VA (Note 1) DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a "1." This is a failure condition that indicates the program or erase cycle was not successfully completed. DQ6 = Toggle? No Yes The DQ5 failure condition may appear if the system tries to program a "1" to a location that is previously programmed to "0." Only an erase operation can change a "0" back to a "1." Under this condition, the device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a "1." No DQ5 = 1? Yes Read Byte Twice (DQ 0-DQ7) Adrdess = VA Under both these conditions, the system must issue the reset command to return the device to reading array data. (Notes 1, 2) DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out is complete, DQ3 switches from "0" to "1." The system may ignore DQ3 if the system can guarantee that the time between additional sector erase commands will always be less than 50 s. See also the "Sector Erase Command Sequence" section. After the sector erase command sequence is written, the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has accepted the command sequence, and then read DQ3. If DQ3 is "1", the internally controlled erase cycle has begun; all further commands (other than Erase Suspend) are ignored until the erase operation is complete. If DQ3 is "0", the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 9 shows the outputs for DQ3. November 22, 2002 DQ6 = Toggle? No Yes FAIL PASS Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to "1". See text. Am29BL162C Figure 8. Toggle Bit Algorithm 27 Table 9. Write Operation Status DQ7 (Note 2) DQ6 DQ5 (Note 1) DQ3 DQ2 (Note 2) RY/BY# DQ7# Toggle 0 N/A No toggle 0 Embedded Erase Algorithm 0 Toggle 0 1 Toggle 0 Reading within Erase Suspended Sector 1 No toggle 0 N/A Toggle 1 Reading within Non-Erase Suspended Sector Data Data Data Data Data 1 Erase-Suspend-Program DQ7# Toggle 0 N/A N/A 0 Operation Standard Mode Erase Suspend Mode Embedded Program Algorithm Notes: 1. DQ5 switches to `1' when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See "DQ5: Exceeded Timing Limits" for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 28 Am29BL162C November 22, 2002 ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . -65C to +150C Ambient Temperature with Power Applied . . . . . . . . . . . . . -65C to +125C Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . . .-0.5 V to +4.0 V A9, OE#, and RESET# (Note 2) . .-0.5 V to +13.0 V 20 ns 20 ns +0.8 V -0.5 V -2.0 V All other pins (Note 1). . . . . . -0.5 V to +VCC+0.5 V 20 ns Output Short Circuit Current (Note 3) . . . . . . 200 mA Figure 9. Maximum Negative Overshoot Waveform Notes: 1. Minimum DC voltage on input and I/O pins is -0.5 V. During voltage transitions, input and I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 9. Maximum DC voltage on input and I/O pins is VCC + 0.5 V. During voltage transitions input or I/O pins may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 10. 2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#, and RESET# may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 9. Maximum DC input voltage on pin A9 and OE# is +13.0 V which may overshoot to 14.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns Figure 10. Maximum Positive Overshoot Waveform OPERATING RANGES Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . -40C to +85C Extended (E) Devices Ambient Temperature (TA) . . . . . . . . -55C to +125C VCC Supply Voltages VCC for regulated voltage range. . . . . . . 3.0 V to 3.6 V Operating ranges define those limits between which the functionality of the device is guaranteed. November 22, 2002 Am29BL162C 29 DC CHARACTERISTICS CMOS Compatible Parameter Description Test Conditions Min Typ Max Unit 1.0 A 35 A 1.0 A ILI Input Load Current VIN = VSS to 5.5 V, VCC = VCC max ILIT A9 Input Load Current VCC = VCC max; A9 = 12.5 V ILO Output Leakage Current VOUT = VSS to 5.5 V, VCC = VCC max ICC1 VCC Active Read Current (Notes 1, 2) CE# = VIL, OE# = VIH, 5 MHz 9 16 mA ICC2 VCC Active Write Current (Notes 2, 3, 6) CE# = VIL, OE# = VIH 20 30 mA ICC3 VCC Standby Current (Note 2) CE#, RESET# = VCC0.3 V 3 10 A ICC4 VCC Standby Current During Reset (Note 2) RESET# = VSS 0.3 V 3 10 A Automatic Sleep Mode (Notes 2, 4) VIH = VCC 0.3 V; VIL = VSS 0.3 V OE# = VIH 3 10 A ICC5 OE# = VIL 8 20 A 25 MHz 15 30 mA ICC6 VCC Burst Mode Read Current (Notes 2, 5) CE# = VIL, OE# = VIH 33 MHz 20 35 mA 40 MHz 25 40 mA VIL Input Low Voltage -0.5 0.8 V VIH Input High Voltage 0.7 x VCC 5.5 V VID Voltage for Autoselect and Temporary Sector Unprotect VCC = 3.3 V 11.5 12.5 V VOL Output Low Voltage IOL = 4.0 mA, VCC = VCC min 0.45 V VOH1 Output High Voltage VOH2 VLKO IOH = -2.0 mA, VCC = VCC min 0.85 x VCC IOH = -100 A, VCC = VCC min VCC-0.4 Low VCC Lock-Out Voltage (Note 4) 2.3 V 2.5 V Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 3 A. 5. 32-word average. 6. Not 100% tested. 30 Am29BL162C November 22, 2002 DC CHARACTERISTICS (Continued) Zero Power Flash Supply Current in mA 25 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 Time in ns Note: Addresses are switching at 1 MHz Figure 11. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) 10 3.6 V Supply Current in mA 8 2.7 V 6 4 2 0 1 2 3 4 5 Frequency in MHz Note: T = 25 C Figure 12. Typical ICC1 vs. Frequency November 22, 2002 Am29BL162C 31 TEST CONDITIONS Table 10. Test Specifications 3.3 V 65R, 70R Test Condition 2.7 k Device Under Test CL Output Load 90R, 120R Unit 1 TTL gate Output Load Capacitance, CL (including jig capacitance) 30 100 pF 6.2 k Input Rise and Fall Times 5 ns 0.0-3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input Pulse Levels Note: Diodes are IN3064 or equivalent Figure 13. Test Setup Key to Switching Waveforms WAVEFORM INPUTS OUTPUTS Steady Changing from H to L Changing from L to H 3.0 V Input Don't Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) 1.5 V Measurement Level 1.5 V Output 0.0 V Figure 14. Input Waveforms and Measurement Levels 32 Am29BL162C November 22, 2002 AC CHARACTERISTICS Read Operations Speed Options and Temperature Ranges Parameter 65R JEDEC Std. Description tAVAV tRC tAVQV Test Setup E 90R 120R I, E I, E I, E Unit Min 65 70 90 120 ns tACC Address to Output Delay CE# = VIL Max OE# = VIL 65 70 90 120 ns tELQV tCE Chip Enable to Output Delay OE# = VIL Max 65 70 90 120 ns tGLQV tOE Output Enable to Output Delay Max 17 18 24 26 26 ns tEHQZ tDF Chip Enable to Output High Z (Note 1) Max 17 18 24 26 26 ns tGHQZ tDF Output Enable to Output High Z (Note 1) Max 25 30 30 ns tAXQX Read Cycle Time (Note 1) I 70R 20 Read Min 0 ns Toggle and Data# Polling Min 10 ns Min 0 ns tOEH Output Enable Hold Time (Note 1) tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First (Note 1) Notes: 1. Not 100% tested. 2. See Figure 13 and Table 10 for test specifications November 22, 2002 Am29BL162C 33 AC CHARACTERISTICS Burst Mode Read Parameter Speed Options and Temperature Ranges 65R JEDEC Std. Description I E 70R 90R 120R I, E I, E I, E Unit 70 90 120 ns 24 26 26 ns Initial Access Time tIACC tBACC LBA# Valid Clock to Output Delay (See Note) Burst Access Time BAA# Valid Clock to Output Delay Max Max 65 17 18 tLBAS LBA# Setup Time Min 6 ns tLBAH LBA# Hold Time Min 2 ns tBAAS BAA# Setup Time Min 6 ns tBAAH BAA# Hold Time Min 2 ns tBDH Data Hold Time from Next Clock Cycle Max 4 ns tACS Address Setup Time to CLK (See Note) Min 6 ns tACH Address Hold Time from CLK (See Note) Min 2 ns tOE Output Enable to Output Valid Max tOEZ Output Enable to Output High Z Max tCEZ Chip Enable to Output High Z Min tCES CE# Setup Time to Clock Min 17 18 24 26 26 ns 20 25 30 30 ns 20 25 30 30 ns 6 ns Note: Initial valid data will be output after second clock rising edge of LBA# assertion. 34 Am29BL162C November 22, 2002 AC CHARACTERISTICS tRC Addresses Stable Addresses tACC CE# tDF tOE OE# tOEH WE# tCE tOH HIGH Z HIGH Z Output Valid Outputs RESET# RY/BY# 0V Figure 15. Conventional Read Operations Timings tCEZ tCES CE# CLK tLBAS LBA# tBAAS tLBAH BAA# tACS A0: A18 tBAAH Aa tBDH tACH tBACC DQ0: DQ15 tIACC Da Da + 1 Da + 2 tOE Da + 3 Da + 31 tOEZ OE#* IND# Figure 16. November 22, 2002 Burst Mode Read Am29BL162C 35 AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description Test Setup All Speed Options Unit tREADY RESET# Pin Low (During Embedded Algorithms) to Read or Write (See Note) Max 20 s tREADY RESET# Pin Low (NOT During Embedded Algorithms) to Read or Write (See Note) Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH RESET# High Time Before Read (See Note) Min 50 ns tRPD RESET# Low to Standby Mode Min 20 s tRB RY/BY# Recovery Time Min 0 ns Note: Not 100% tested. RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP Figure 17. RESET# Timings 36 Am29BL162C November 22, 2002 AC CHARACTERISTICS Erase/Program Operations Parameter Speed Options JEDEC Std Description 65R 70R 90R 120R Unit tAVAV tWC Write Cycle Time (Note 1) Min 65 70 90 120 ns tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns 0 ns tGHWL tGHWL tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Typ 9 s tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 sec 35 35 35 50 ns tVCS VCC Setup Time (Note 1) Min 50 s tRB Recovery Time from RY/BY# Min 0 ns Program/Erase Valid to RY/BY# Delay Min 90 ns tBUSY Notes: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. November 22, 2002 Am29BL162C 37 AC CHARACTERISTICS Program Command Sequence (last two cycles) tAS tWC Addresses Read Status Data (last two cycles) 555h PA PA PA tAH CE# tCH OE# tWHWH1 tWP WE# tWPH tCS tDS tDH A0h Data PD Status tBUSY DOUT tRB RY/BY# VCC tVCS Note: PA = program address, PD = program data, DOUT is the true data at the program address. Figure 18. Program Operation Timings 38 Am29BL162C November 22, 2002 AC CHARACTERISTICS Erase Command Sequence (last two cycles) tAS tWC 2AAh Addresses Read Status Data VA SA VA 555h for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h In Progress 30h Complete 10 for Chip Erase tBUSY tRB RY/BY# tVCS VCC Note: SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see "Write Operation Status"). Figure 19. November 22, 2002 Chip/Sector Erase Operation Timings Am29BL162C 39 AC CHARACTERISTICS tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ7 Complement Complement DQ0-DQ6 Status Data Status Data Valid Data True High Z Valid Data True tBUSY RY/BY# Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 20. Data# Polling Timings (During Embedded Algorithms) tRC Addresses VA VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ6/DQ2 tBUSY Valid Status Valid Status (first read) (second read) Valid Status Valid Data (stops toggling) RY/BY# Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. Figure 21. 40 Toggle Bit Timings (During Embedded Algorithms) Am29BL162C November 22, 2002 AC CHARACTERISTICS Enter Embedded Erasing Erase Suspend Erase Suspend Read Erase WE# Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Erase Suspend Read Erase Complete DQ6 DQ2 Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector. Figure 22. DQ2 vs. DQ6 for Erase and Erase Suspend Operations Temporary Sector Unprotect Parameter JEDEC Std. Description tVIDR VID Rise and Fall Time (See Note) tRSP RESET# Setup Time for Temporary Sector Unprotect All Speed Options Unit Min 500 ns Min 4 s Note: Not 100% tested. 12 V RESET# 0 or 3 V tVIDR tVIDR Program or Erase Command Sequence CE# WE# tRSP RY/BY# Figure 23. Temporary Sector Unprotect Timing Diagram November 22, 2002 Am29BL162C 41 AC CHARACTERISTICS VID VIH RESET# SA, A6, A1, A0 Valid* Valid* Sector Protect/Unprotect Data 60h Valid* Verify 60h 40h Status Sector Protect: 150 s Sector Unprotect: 15 ms 1 s CE# WE# OE# Note: For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. Figure 24. 42 Sector Protect/Unprotect Timing Diagram Am29BL162C November 22, 2002 AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter Speed Options JEDEC Std Description 65R 70R 90R 120R Unit tAVAV tWC Write Cycle Time (Note 1) Min 65 70 90 120 ns tAVEL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 45 45 45 50 ns tDVEH tDS Data Setup Time Min 35 35 45 50 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min tEHEL tCPH CE# Pulse Width High Min 30 ns tWHWsH1 tWHWH1 Programming Operation (Note 2) Typ 9 s tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 sec 0 35 35 ns 35 50 ns Notes: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. November 22, 2002 Am29BL162C 43 AC CHARACTERISTICS 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tCP CE# tWS tWHWH1 or 2 tCPH tBUSY tDS tDH DQ7# Data tRH A0 for program 55 for erase DOUT PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# Notes: 1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device. 2. Figure indicates the last two bus cycles of the command sequence. Figure 25. 44 Alternate CE# Controlled Write Operation Timings Am29BL162C November 22, 2002 ERASE AND PROGRAMMING PERFORMANCE Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 1 15 s Chip Erase Time 15 Excludes 00h programming prior to erasure (Note 4) Word Programming Time 9 360 s Chip Programming Time (Note 3) 18 54 s s Excludes system level overhead (Note 5) Notes: 1. Typical program and erase times assume the following conditions: 25C, 3.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90C, VCC = 3.0 V, 100,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 8 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1 million cycles. LATCHUP CHARACTERISTICS Description Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) -1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins -1.0 V VCC + 1.0 V -100 mA +100 mA VCC Current Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. SSOP PIN CAPACITANCE Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25C, f = 1.0 MHz. DATA RETENTION Parameter Test Conditions Min Unit 150C 10 Years 125C 20 Years Minimum Pattern Data Retention Time * For reference only. BSC is an ANSI standard for Basic Space Centering November 22, 2002 Am29BL162C 45 PHYSICAL DIMENSIONS* SSO056--56-Pin Shrink Small Outline Package Dwg rev AB; 10/99 46 Am29BL162C November 22, 2002 REVISION SUMMARY Revision A (September 1998) Common Flash Memory Interface (CFI) Initial release. Corrected data for the following hex CFI addresses: 28, 38, 39, 3C. Revision B (December 1998) Command Definitions Global Expanded data sheet into full version. Revision C (December 1998) Global Added a separate set of read access specifications for devices at industrial temperature range. Changed read access specifications for 90 and 120 ns devices at extended temperature range to 28 ns. Reorganized and rewrote the "Reading Array Data" section into two sections entitled "Reading Array Data in Non-burst Mode" and "Reading Array Data in Burst Mode". Added burst mode read figures comparing system frequency and device speed. Added burst mode status to autoselect command sequence in command definitions table. Absolute Maximum Ratings Ordering Information Corrected the maximum VCC rating to +4.0 V, and the maximum all other pins rating to +5.5 V. Deleted commercial temperature rating. DC Characteristics table Corrected the maximum rating for VIH to 5.5 V. Revision D (May 17, 1999) AC Characteristics Global Changed data sheet status to preliminary. Deleted the 70R speed option. Deleted the 70 speed option at extended temperature range. Added the 90R and 120R speed options at extended temperature range. Deleted the 90 and 120 speed options at extended temperature range. Distinctive Characteristics Changed device endurance from program/erase cycles to erase cycles. Block Diagram Deleted redundant path between state control and erase voltage generator. Added sector switch block. Deleted RY/BY# buffer. VCC and VSS are now shown properly. Pin Configuration Burst Mode Read figure Corrected figure. Deleted note; OE# and BAA# should not be tied together. LBA# should be returned high after it coincides with a rising edge of CLK. BAA# should not be asserted before the first word of data appears on the bus. The data is held on the outputs for only tBDH after the next clock. Revision D+1 (July 2, 1999) Command Definitions Reading Array Data in Burst Mode: Added reference to figure 3 to the first paragraph. Revision E (November 2, 1999) Clarified the explanation of IND#. Global Device Bus Operations Reorganized and rewrote the following subsections: Requirements for Reading Array Data, Read Mode, Burst Mode Read, IND# End of Burst Indicator, and Burst Mode Status. "Reading Array Data in Non-burst Mode". The Burst Mode Status section is now integrated into the autoselect mode section. Device Bus Operations table: In the notes, deleted reference to BYTE# pin. Sector Address table: Added sector address bit settings for A19-A12. November 22, 2002 In the read operations and burst mode operations tables, reflected the global changes in speed options (see the "global" revision entry). All speed options are now offered only at the regulated voltage range of 3.0 to 3.6 V. The 90 and 120 ns speed options now have a tOE of 26 ns at the industrial temperature range. The 70R speed option is now available at the extended temperature range. AC Characteristics In figures 17 and 18, deleted t GHWL. Modified OE# waveform. Physical Dimensions Updated drawing of SSOP to new version. Am29BL162C 47 Revision F (June 20, 2000) Revision F+2 (July 22, 2002) Global Pin Description, IND# End of Burst Indicator The "preliminary" designation has been removed from the document. Parameters are now stable, and only speed, package, and temperature range combinations are expected to change in future data sheet revisions. Clarified description of IND# function. Distinctive Characteristics Changed burst access time specification for the 65R speed option in the industrial temperature range from 19 to 18 ns. Product Selector Guide Replaced tOE with tBACC to more clearly distinguish burst mode access from asynchronous access times. Note however, that in burst mode, tOE and tBACC specifications are identical. Changed tBACC for the 65R speed option in the industrial temperature range from 19 to 18 ns. Ordering Information Burn-in processing is no longer available. Table 1, Device Bus Operations In burst read operations section, changed BAA# to "H" for "Load starting Burst Address" and Terminate Current Burst Read Cycle; Start New Burst Read Cycle." Requirements for Reading Array Data in Synchronous (Burst) Mode Modified section to clarify the description of the IND# and burst read functions. Burst Sequence Table Deleted table. Absolute Maxiumum Ratings Modified maximum DC voltage and maximum positive overshoot in Note 1 to refer to input and I/O pins. Revision F+3 (August 19, 2002) Requirements for Reading Array Data Array in Asynchronous (Non-Burst) Mode Product Selector Guide Clarified the description of how to terminate a burst mode read operation. Burst Mode Read with 40 MHz CLK figure Added Note #2. Revision F+4 (September 12, 2002) Product Selector Guide Changed tBACC for the 65R speed option in the industrial temperature range from 19 to 18 ns. Removed Note #2. Read Operations table Revision F+5 (November 22, 2002) Changed tOE and tDF for the 65R speed option in the industrial temperature range from 19 to 18 ns. Distinctive Characteristics Burst Mode Read table Erase Suspend/Erase Resume Command Sequence Changed tOE and tBACC for the 65R speed option in the industrial temperature range from 19 to 18 ns. Changed endurance to 1 million cycles. Burst Mode Read figure Noted that only asynchronous reads are allowed during the erase suspend mode. Corrected BAA# waveform to return high before the final clock cycle shown. Erase/Program Operations table, Alternate CE# Controlled Erase/Program Operations table Erase and Programming Performance table, Erase and Program Operations table, Alternate CE# Controlled Erase and Program Operations table Changed typical sector erase time from 3 s to 1 s. Resolved differences in typical sector erase times. The typical sector erase time for all sectors is 3 sec. Revision F+1 (November 21, 2000) Erase and Programming Performance Changed typical/maximum sector erase time from 3 s/60 s to 1 s/15 s, respectively. Changed typical chip erase time from 40 s to 15 s. Changed endurance to 1 million cycles. Added Asynchronous mode and Burst mode sections. Added table of contents. Added Figure 1, In-System Sector Protect/Unprotect Algorithms figure to document (was missing from previous revisions). 48 Am29BL162C November 22, 2002 Copyright (c) 2002 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. November 22, 2002 Am29BL162C 49