z-b oS xo MOSPOWER Prime Product Selector Guide * 200C RATING (e; Packages: S {i | i U J u " BVpss Quad | Quad (Volts) TO-3 TO-220 TO-39 10-237 T0-92 TO-202 Side Braze Plastic 450-500 IRF450 IRF840 13A, 0.49 BA, 0.852 IRF440 VN5001 D/IRF830 BA, 0.852 5.5A, 1.52 VNPOO2A * IRF820 6.5A, 1.52 2.5A, 30 VN5001A/IRF430 4.5A, 1.5 350-400 IRF350 IRF740 15A, 0.30 10A, 0.550 IRF340 VN4000D/IRF730 10A, 0.550 5.5A, 1.02 VNMO01A # IRF720 BA, 1.00 3A, 1.80 VN4000A/IRF330 5.5A, 1.02 150-240 tRF250 IRF640 VN2406B VN2406M VN2406L 30A, 0.0852 18A, 0.189 0.8A, 62 0.3A, 62 0.21A, 62 IRF240 IRF630 VN2410M VN2410L 18A, 0.180 9A, 0.42 0.25A, 100 0.16A, 109 IRF230 IRF620 9A, 0.40 5A, 0.80 IRF220 VN2406D 5A, 0.80 1.4A, 62 MOSPOWER Selector Guide *200C Rating MOSPOWER Selector Guide = Sse" N-Channel MOSPOWER Breakdown Ip Power Device Voltage (Bolon Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 500 0.4 13.0 150 IRF450 500 0.5 12.0 150 IRF452 500 0.85 8.0 125 IRF440 500 1.10 7.0 125 IRF442 500 1.5 6.5 175 VNPO002A* 500 1.5 45 100 VN5001A 500 1.5 45 75 IRF430 500 2.0 4.0 100 VN5002A 500 2.0 4.0 75 IRF432 500 3.0 2.5 40 {RF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF461 450 0.5 12.0 150 IRF453 450 0.85 8.0 125 IRF441 450 1.10 7.0 125 IRF443 450 1.5 6.5 175 VNNOO2A* 450 1.5 45 100 VN4501A 450 1.5 45 75 IRF431 450 2.0 40 100 VN4502A 450 2.0 4.0 75 IRF433 450 3.0 2.5 40 IRF421 450 4.0 2.0 40 IRF423 400 0.3 15.0 150 IRF350 400 0.4 13.0 150 IRF352 400 0.55 10.0 125 (RF340 400 0.80 8.0 125 IRF342 400 1.0 8.0 175 VNMO01A* 400 1.0 6.0 125 VN4000A 400 1.0 5.5 76 IRF330 400 1.5 5.0 125 VN4001A 400 1.5 45 75 IRF332 e 400 1.8 3.0 40 IRF320 400 2.5 2.5 40 IRF322 eS 350 0.3 15.0 150 IRF351 350 0.4 13.0 150 IRF353 350 0.55 10.0 125 (RF341 TO-3 350 0.80 8.0 125 IRF343 350 1.0 8.0 175 VNLOO01A* 350 1.0 6.0 125 VN3500A 350 1.0 5.5 75 IRF331 350 1.5 5.0 125 VN3501A 350 1.5 45 75 IRF333 350 1.8 3.0 40 IRF321 350 2.5 2.5 40 IRF323 200 0.085 30.0 150 IRF250 200 0.12 25.0 150 IRF252 200 0.18 18.0 125 IRF240 200 0.22 16.0 125 IRF242 200 0.4 9.0 75 {RF230 200 0.6 8.0 75 IRF232 200 0.8 5.0 40 IRF220 200 1.2 4.0 40 IRF222 150 0.085 30.0 150 IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 0.8 5.0 40 IRF221 150 1.2 4.0 40 IRF223 120 0.18 14.0 75 VN1200A 120 0.25 12.0 100 VN1201A 1-4 Siliconix 500Vmosrower solenoid and relay drivers. IRF450 = IRF451 IRF452 IRF453 -Channel Enhancement Mode Siliconix Advanced Information These power FETs are designed especially for off-line switching regulators, converters, Product Summary FEATURES . Part a High Voltage Number | 8oss | Rosiom Ip Package a No Second Breakdown IRF450 500V 040 WA a High Input Impedance IRF451 450V a Internal Drain-Source Diode InFas2 | S00V Tos m Very Rugged: Excellent SOA TRF45S ro 0.52 | 128 = Extremely Fast Switching DB BENEFITS wf m= Reduced Component Count oo = Improved Performance 8 a Simpler Designs a improved Reliability ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Drain Current IRF450 0... c cece e cnet ease rene enee rare res 500V Pulsed (80yus to 300us, 1% duty cycle)..................65 +52A IRFAS1 occ ceccccce ccc eecueceeeceee see seeesreeeseseaees 450V IRF452 00 500 Gate Current (Peak) 2.0.00... 0... cece cece rece ee een e eee t3A IRF453 ooo ccc cece eee eee een eens cent enen ners er ennes 450V Gate-Source Voltage ............ ccc ese eneeeere eee eee ee ee +40V Drain-Gate Voitage Total Power Dissipation ............ ccc ccc cece ere eee eee 150 W IRF450 00... cee eee eee eece eee eceeeaeeeeeeeteneeneenaeenes 500V . : we IRF451 sees 450V Linear Derating Factor ......... 0... ccc ccc eee cece ee eee 1.2W/?C iRF452 500V Operating and Storage IREASS ooo cceeceeesesseseesesecseseeseseses 2 450V TOMPOTAMUTS oo ee see eee eee eereeseeereeee S5C to + 150C Drain Current Continuous IRF450, 451.00... cece cee eee eee eee e eee + 13A IRF452, 453... 000. c eee eee tenet eens 12A PACKAGE DIMENSIONS [we (22.225) | 0.250 = (6.35) MAX 0.135 max (3.429) SEATING - 0.038 70.968) ns PLANE 1.197 (soa [3.177 (29.496) 0.675 (17.145) a688 | 16637) 4 i = (3775) MAX BOTH ENDS aago 17.176 Y fon |? oa20 10.668) eS + TI Sei -\/ 0.161 14.089) ons E71 as ont 73.835) 0.208 (5-207) sromn view (arias) BMAX TO-3 PIN 1 Gate PIN 2 Source CASE Drain 2-32 Siliconix ELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Part Parameter Number Min Typ Max Unit Test Conditions Static IRF450 500 Drain-Source Breakdown IRF452 BYoss Voltage TARAS vy | Ves=9, Ip = 250uA inF4s3 | 450 Vesith) Gate Threshold Voltage All 20 | 3.2 4.0 V__ | Vos= Ves, Ip=1mA less Gate-Body Leakage All 50 +100 nA Veg = 20V, Vps =0 Zero Gate Voltage Drain 0.4 0.25 Vo = 0.8 Rated Vis Vag? 0 loss All mA Current 0.5 1.0 Vos = Rated Vps, Veg = 0, To = 125C lbjon) ~~ On-State Drain Current Alt 13 A | Vog = 25V, Veg = 10V (Note 1) Static Drain-S On-Stat IRS! o3 04 atic Drain-Source On-State _ _ Tosi) Resistance IRF45D 2 Ves = 10V, Ip =7A (Note 1) IRF453 04 | 05 Dynamic Ofs Forward Transconductance All 6 10 Ss Vos = 25V, Ip = 7A (Note 1) Ciss Input Capacitance 2000 ; 3000 Coss Output Capacitance All 400 600 pF Veg = 0, Vog = 25V, f= 1 MHz Crs Reverse Transfer Capacitance 100 200 tgon Turn-On Delay Time All 40 35 t, Rise Time All 60 50 ns Vop = 210V, Ip = 7A, R, = 302, Ry = 102 tat) Turn-Off Delay Time All 200 150 (Fig. 1) ty Fall Time All 90 70 Drain-Source Diode Characteristics Vsp Forward On Voltage All -1.3 Vv Ig =13A Veg = 0 (Note 1) te Reverse Recovery Time All 400 ns Ip=13A, Ves = 9, di/dt = 100A/us (Fig. 2) Note 1: Pulse test 80 us to 300 us, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circuit 50.2 di/dt Adjust (1 - 27 wH) + 5 TO 50uF 7 Inaoss Ee ii , VYouT 1 | ~ = | 5 | 240 Q rm + IN4001 I 4000uF See 2 P+} | - | ) | ctReurr Rg0250 PULSE UNDER L$ 0.01uH [LeeneraTor| LUST PW. = 1 ps Cg <50 pF ___t + id WAN DUTY CYCLE = 1% 1N4723 -* 2N4204 A score } FROM TRIGGER CKT Siliconix 2-33 CGvidi = 2Syidl = bSPddl = OSPial