STD8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 , 5 A MDmeshTMII Power MOSFET in DPAK, TO-220 and IPAK Features TAB Order codes VDSS@TJMAX RDS(on)max. STD8NM50N STP8NM50N STU8NM50N ID 3 1 550 V < 0.79 DPAK 5A TAB 100% avalanche tested Low input capacitances and gate charge Low gate input resistance TAB 1 Applications 3 3 2 2 1 IPAK TO-220 Switching applications Description Figure 1. These devices are N-channel Power MOSFETs developed using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Internal schematic diagram $ 4!" ' 3 !-V Table 1. Device summary Order codes Marking Packages Packaging DPAK Tape and reel STD8NM50N STP8NM50N 8NM50N TO-220 Tube STU8NM50N November 2011 IPAK Doc ID 17413 Rev 5 1/19 www.st.com 19 Contents STD8NM50N, STP8NM50N, STU8NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 .............................................. 9 Doc ID 17413 Rev 5 STD8NM50N, STP8NM50N, STU8NM50N 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage 500 V VGS Gate-source voltage 25 V ID Drain current (continuous) at TC = 25 C 5 A ID Drain current (continuous) at TC = 100 C 3 A Total dissipation at TC = 25 C 45 W Peak diode recovery voltage slope 15 V/ns - 55 to 150 C 150 C PTOT dv/dt (1) Tstg Tj Storage temperature Max. operating junction temperature 1. ISD 7 A, di/dt 400 A/s, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK IPAK Rthj-case Thermal resistance junction-case max 2.78 Rthj-amb Thermal resistance junction-ambient max 100 Rthj-pcb Thermal resistance junction-pcb max Tl Table 4. TO-220 C/W 62.5 50 C/W C/W Maximum lead temperature for soldering purpose 300 C Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2 A EAS Single pulse avalanche energy (starting Tj = 25C, ID = IAR, VDD = 50 V) 140 mJ Doc ID 17413 Rev 5 3/19 Electrical characteristics 2 STD8NM50N, STP8NM50N, STU8NM50N Electrical characteristics (TC = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA Min. Typ. Max. Unit 500 V IDSS VDS = 500 V Zero gate voltage drain current (VGS = 0) VDS = 500 V, TC = 125 C 1 100 A A IGSS Gate-body leakage current (VDS = 0) 100 nA 3 4 V 0.73 0.79 Min. Typ. Max. Unit VDS = 50 V, f = 1 MHz, VGS = 0 - 364 33 1.2 - pF pF pF VDS = 0 to 50 V, VGS = 0 - 147.5 - pF VGS = 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A RDS(on) Static drain-source on resistance Table 6. Symbol Ciss Coss Crss 2 VGS = 10 V, ID = 2.5 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output Coss(eq)(1) capacitance time related Test conditions RG Intrinsic gate resistance f = 1 MHz open drain - 5.4 - Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 5 A, VGS = 10 V (see Figure 16) - 14 3 7 - nC nC nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Symbol td(on) tr td(off) tf 4/19 Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 250 V, ID = 5 A, RG = 4.7 , VGS = 10 V (see Figure 15) Doc ID 17413 Rev 5 Min. Typ. - 7 4.4 25 8.8 Max Unit - ns ns ns ns STD8NM50N, STP8NM50N, STU8NM50N Table 8. Electrical characteristics Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Test conditions Min. Typ. Max. Unit - 5 20 A A ISD = 5 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5 A, di/dt = 100 A/s VDD = 60 V (see Figure 20) - 187 1.3 14 ns C A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5 A, di/dt = 100 A/s VDD = 60 V, Tj = 150 C (see Figure 20) - 224 1.5 13 ns C A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% Doc ID 17413 Rev 5 5/19 Electrical characteristics STD8NM50N, STP8NM50N, STU8NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK and IPAK Figure 3. Thermal impedance for DPAK and IPAK Figure 5. Thermal impedancefor TO-220 Figure 7. Transfer characteristics AM07915v1 ID (A) on ) 10s D S( O Li per m at ite io d ni by n m this ax a R rea is 100 10 100s 1ms 10ms Tj=150C Tc=25C 1 0.1 0.1 Figure 4. Sinlge pulse 10 1 100 VDS(V) Safe operating area for TO-220 AM07916v1 ID (A) n) 10s D S( o O Li per m at ite io d ni by n m this ax a R rea is 100 10 100s 1ms 10ms Tj=150C Tc=25C 1 0.1 0.1 Figure 6. Sinlge pulse 10 1 100 VDS(V) Output characteristics ID (A) AM07917v1 VGS=10V 10 AM07918v1 ID (A) VDS= 20 V 10 7V 8 8 6V 6 6 4 4 5V 2 2 0 0 6/19 10 20 30 VDS(V) Doc ID 17413 Rev 5 0 0 2 4 6 8 VGS(V) STD8NM50N, STP8NM50N, STU8NM50N Figure 8. Electrical characteristics Static drain-source on resistance AM07919v1 RDS(on) () 0.77 Figure 9. Gate charge vs gate-source voltage AM03195v1 VGS (V) VDD=400 V 12 VGS=10V 350 VDS 10 0.76 400 ID=5 A 300 0.75 8 250 6 200 0.74 0.73 150 0.72 4 100 0.71 2 0.7 0.69 0 2 1 3 4 5 ID(A) Figure 10. Capacitance variations 50 0 10 5 0 0 Qg(nC) 15 Figure 11. Output capacitance stored energy AM07921v1 C (pF) AM07922v1 E (J) 1000 Ciss 2 100 Coss 1 10 Crss 1 0 1 10 100 Figure 12. Normalized gate threshold voltage vs temperature AM07923v1 VGS(th) (norm) 0 0 VDS(V) ID = 250 A 1.3 0.80 0.9 50 75 100 500 VDS(V) AM07924v1 ID = 2.5 A 0.90 25 400 RDS(on) (norm) 2.1 1.7 0 300 Figure 13. Normalized on resistance vs temperature 1.00 0.70 -50 -25 200 100 TJ(C) Doc ID 17413 Rev 5 0.5 -50 -25 0 25 50 75 100 TJ(C) 7/19 Electrical characteristics STD8NM50N, STP8NM50N, STU8NM50N Figure 14. Normalized VDS vs temperature AM09028v1 VDS (norm) ID=1mA 1.10 1.08 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 -50 -25 8/19 0 25 50 75 100 TJ(C) Doc ID 17413 Rev 5 STD8NM50N, STP8NM50N, STU8NM50N 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform AM01471v1 Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 17413 Rev 5 10% AM01473v1 9/19 Package mechanical data 4 STD8NM50N, STP8NM50N, STU8NM50N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. DPAK (TO-252) mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R V2 10/19 Max. 0.20 0 8 Doc ID 17413 Rev 5 STD8NM50N, STP8NM50N, STU8NM50N Package mechanical data Figure 21. DPAK (TO-252) drawing 0068772_H Figure 22. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimension are in millimeters Doc ID 17413 Rev 5 11/19 Package mechanical data Table 10. STD8NM50N, STP8NM50N, STU8NM50N TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/19 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 Doc ID 17413 Rev 5 STD8NM50N, STP8NM50N, STU8NM50N Package mechanical data Figure 23. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 17413 Rev 5 13/19 Package mechanical data Table 11. STD8NM50N, STP8NM50N, STU8NM50N IPAK (TO-251) mechanical data mm. DIM. min. typ A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 10 V1 14/19 max. Doc ID 17413 Rev 5 o 1.00 STD8NM50N, STP8NM50N, STU8NM50N Package mechanical data Figure 24. IPAK (TO-251) drawing 0068771_H AM09214V1 Doc ID 17413 Rev 5 15/19 Packaging mechanical data 5 STD8NM50N, STP8NM50N, STU8NM50N Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 16/19 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 17413 Rev 5 18.4 22.4 STD8NM50N, STP8NM50N, STU8NM50N Packaging mechanical data Figure 25. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 D1 P1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 26. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Tape slot In core for Full radius Tape start G measured At hub AM08851v1 Doc ID 17413 Rev 5 17/19 Revision history 6 STD8NM50N, STP8NM50N, STU8NM50N Revision history Table 13. 18/19 Document revision history Date Revision Changes 20-Apr-2010 1 First release. 03-Sep-2010 2 Document status promoted from preliminary data to datasheet. Inserted Section 2.1: Electrical characteristics (curves). Corrected RDS(on) max value in: Features. 03-Feb-2011 3 Modified: Figure 4. Modified: note 1. Modified: Table 5. 21-Oct-2011 4 Updated VDSS (@Tjmax) in cover page. Updated Section 4: Package mechanical data. Minor text changes. 15-Nov-2011 5 The part number STF8NM50N has been moved to a separate datasheet. Doc ID 17413 Rev 5 STD8NM50N, STP8NM50N, STU8NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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