INCHANGE Power Transistors 2N5298 Silicon NPN Transistors Features With TO-220 package Designed for use in general purpose amplifier and switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT 80 V Collector to emitter voltage 60 V Emitter to base voltage 5.0 V ICP Peak collector current 5.0 A IC Collector current 4.0 A PC Collector power dissipation 36 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 VCBO Collector to base voltage VCEO VEBO TO-220 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS ICBO Collector-base cut-off current IEBO Emitter-base cut-off current ICEO Collector-emitter cut-off current VCBO Collector-base breakdown voltage V(BR)CEO VEBO Collector-emitter breakdown voltage MAX UNIT VCB = 80V; IE=0 0.2 mA VEB = 5V; IC=0 1.0 mA VCE=60V,IB=0 0.3 mA IC=30mA,IB=0 MIN 60 V Emitter-base breakdown voltage VCEsat-1 Collector-emitter saturation voltages VCEsat-2 Collector-emitter saturation voltages VCEsat-3 Collector-emitter saturation voltages VCEsat-4 Collector-emitter saturation voltages IC = 3A; IB = 375mA 1.2 hFE-1 Forward current transfer ratio IC=1A,VCE=4V 25 hFE-2 Forward current transfer ratio IC=3A,VCE=4V 10 hFE-3 Forward current transfer ratio hFE-4 Forward current transfer ratio VBE(sat)1 Base-emitter saturation voltages VBE(sat)2 Base-emitter saturation voltages VBE(sat)3 Base-emitter saturation voltages fT Transition frequency at f = 1MHz tf Fall time ts Tum-off storage time IC=3A,VCE=4V IC=0.5A,VCE=10V 50 1.8 3.0 V V