S29PL-J 128-/128-/64-/32-Mbit (8/8/4/2M x 16-Bit) 3V, Flash with Enhanced VersatileIOTM Distinctive Characteristics Architectural Advantages 128-/128-/64-/32-Mbit Page Mode devices - Page size of 8 words: Fast page read access from random locations within the page Single power supply operation - Full Voltage range: 2.7 to 3.6 V read, erase, and program operations for battery-powered applications Dual Chip Enable inputs (only in PL129J) - Two CE# inputs control selection of each half of the memory space Simultaneous Read/Write Operation - Data can be continuously read from one bank while executing erase/program functions in another bank - Zero latency switching from write to read operations FlexBank Architecture (PL127J/PL064J/PL032J) - 4 separate banks, with up to two simultaneous operations per device - Bank A: PL127J -16 Mbit (4 Kw 8 and 32 Kw 31) PL064J - 8 Mbit (4 Kw 8 and 32 Kw 15) PL032J - 4 Mbit (4 Kw 8 and 32 Kw 7) - Bank B: PL127J - 48 Mbit (32 Kw 96) PL064J - 24 Mbit (32 Kw 48) PL032J - 12 Mbit (32 Kw 24) - Bank C: PL127J - 48 Mbit (32 Kw 96) PL064J - 24 Mbit (32 Kw 48) PL032J - 12 Mbit (32 Kw 24) - Bank D: PL127J -16 Mbit (4 Kw 8 and 32 Kw 31) PL064J - 8 Mbit (4 Kw 8 and 32 Kw 15) PL032J - 4 Mbit (4 Kw 8 and 32 Kw 7) FlexBank Architecture (PL129J) - 4 separate banks, with up to two simultaneous operations per device - CE#1 controlled banks: Bank 1A: PL129J - 16-Mbit (4Kw 8 and 32Kw 31) Bank 1B: PL129J - 48-Mbit (32Kw 96) - CE#2 controlled banks: Bank 2A: PL129J - 48-Mbit (32 Kw 96) Bank 2B: PL129J - 16-Mbit (4 Kw 8 and 32 Kw 31) Enhanced VersatileI/O (VIO) Control Cypress Semiconductor Corporation Document Number: 002-00615 Rev. *B * - Output voltage generated and input voltages tolerated on all control inputs and I/Os is determined by the voltage on the VIO pin - VIO options at 1.8 V and 3 V I/O for PL127J and PL129J devices - 3V VIO for PL064J and PL032J devices Secured Silicon Sector region - Up to 128 words accessible through a command sequence - Up to 64 factory-locked words - Up to 64 customer-lockable words Both top and bottom boot blocks in one device Manufactured on 110-nm process technology Data Retention: 20 years typical Cycling Endurance: 1 million cycles per sector typical Performance Characteristics High Performance - Page access times as fast as 20 ns - Random access times as fast as 55 ns Power consumption (typical values at 10 MHz) - 45 mA active read current - 17 mA program/erase current - 0.2 A typical standby mode current Software Features Software command-set compatible with JEDEC 42.4 standard - Backward compatible with Am29F, Am29LV, Am29DL, and AM29PDL families and MBM29QM/RM, MBM29LV, MBM29DL, MBM29PDL families CFI (Common Flash Interface) compliant - Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices Erase Suspend / Erase Resume - Suspends an erase operation to allow read or program operations in other sectors of same bank Program Suspend / Program Resume - Suspends a program operation to allow read operation from sectors other than the one being programmed Unlock Bypass Program command Reduces overall programming time when issuing multiple program command sequences 198 Champion Court * San Jose, CA 95134-1709 * 408-943-2600 Revised August 10, 2016 S29PL-J Hardware Features Ready/Busy# pin (RY/BY#) - Provides a hardware method of detecting program or erase cycle completion Hardware reset pin (RESET#) - Hardware method to reset the device to reading array data WP#/ ACC (Write Protect/Acceleration) input - At VIL, hardware level protection for the first and last two 4K word sectors. - At VIH, allows removal of sector protection - At VHH, provides accelerated programming in a factory setting Persistent Sector Protection - A command sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector - Sectors can be locked and unlocked in-system at VCC level Document Number: 002-00615 Rev. *B Password Sector Protection - A sophisticated sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector using a user-defined 64-bit password Package options - Standard discrete pinouts 11 8 mm, 80-ball Fine-pitch BGA (PL127J) (VBG080) 8.15 6.15 mm, 48-ball Fine pitch BGA (PL064J/PL032J) (VBK048) - MCP-compatible pinout 8 11.6 mm, 64-ball Fine-pitch BGA (PL127J) 7 9 mm, 56-ball Fine-pitch BGA (PL064J and PL032J) Compatible with MCP pinout, allowing easy integration of RAM into existing designs - 20 14 mm, 56-pin TSOP (PL127J) (TS056) Page 2 of 105 S29PL-J Contents 1. General Description..................................................... 4 2. 2.1 2.2 Simultaneous Read/Write Operation with Zero Latency ...................................... 4 Page Mode Features ..................................................... 5 Standard Flash Memory Features ................................. 5 3. Ordering Information ................................................... 6 4. Product Selector Guide ............................................... 8 5. Block Diagram.............................................................. 8 6. Simultaneous Read/Write Block Diagram.................. 9 7. Simultaneous Read/Write Block Diagram (PL129J)............................................ 10 8. 8.1 8.2 8.3 Connection Diagrams................................................ Special Package Handling Instructions........................ 80-Ball Fine-Pitch BGA--PL127J ................................ 64-Ball Fine-Pitch BGA-- MCP Compatible--PL127J .......................................... 48-Ball Fine-Pitch BGA, PL064J and PL032J..................................................... 56-Pin TSOP 20 x 14 mm ............................................ 56-Ball Fine-Pitch Ball Grid Array, PL064J and PL032J..................................................... 8.4 8.5 8.6 11 11 11 12 13 14 15 14.6 Secured Silicon Sector Flash Memory Region ............. 55 14.7 Hardware Data Protection............................................. 57 15. Common Flash Memory Interface (CFI) .................... 58 16. 16.1 16.2 16.3 16.4 Command Definitions................................................. 61 Reading Array Data ...................................................... 61 Reset Command ........................................................... 61 Autoselect Command Sequence .................................. 62 Enter/Exit Secured Silicon Sector Command Sequence .................................................... 62 16.5 Word Program Command Sequence............................ 63 16.6 Chip Erase Command Sequence ................................. 64 16.7 Sector Erase Command Sequence .............................. 65 16.8 Erase Suspend/Erase Resume Commands ................. 66 16.9 Program Suspend/Program Resume Commands ........ 67 16.10Command Definitions Tables ....................................... 67 17. 17.1 17.2 17.3 17.4 17.5 17.6 17.7 Write Operation Status ............................................... 71 DQ7: Data# Polling ....................................................... 71 RY/BY#: Ready/Busy#.................................................. 72 DQ6: Toggle Bit I .......................................................... 72 DQ2: Toggle Bit II ......................................................... 74 Reading Toggle Bits DQ6/DQ2..................................... 74 DQ5: Exceeded Timing Limits ...................................... 74 DQ3: Sector Erase Timer.............................................. 75 9. Pin Description........................................................... 16 18. Absolute Maximum Ratings....................................... 76 10. Logic Symbol ............................................................. 17 19. Operating Ranges ....................................................... 77 11. 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8 11.9 Device Bus Operations.............................................. Requirements for Reading Array Data......................... Simultaneous Read/Write Operation ........................... Writing Commands/Command Sequences.................. Standby Mode.............................................................. Automatic Sleep Mode................................................. RESET#: Hardware Reset Pin..................................... Output Disable Mode ................................................... Autoselect Mode .......................................................... Selecting a Sector Protection Mode............................. 17 18 19 19 20 20 20 21 43 47 20. DC Characteristics...................................................... 78 21. 21.1 21.2 21.3 21.4 21.5 21.6 AC Characteristic........................................................ 79 Test Conditions ............................................................. 79 Switching Waveforms ................................................... 80 Read Operations........................................................... 80 Reset ............................................................................ 82 Erase/Program Operations ........................................... 83 Timing Diagrams........................................................... 84 12. 12.1 12.2 12.3 12.4 Sector Protection ....................................................... Persistent Sector Protection ........................................ Password Sector Protection......................................... WP# Hardware Protection ........................................... Selecting a Sector Protection Mode............................. 49 49 49 49 49 13. 13.1 13.2 13.3 13.4 Persistent Sector Protection..................................... Persistent Protection Bit (PPB) .................................... Persistent Protection Bit Lock (PPB Lock)................... Dynamic Protection Bit (DYB)...................................... Persistent Sector Protection Mode Locking Bit............ 50 50 50 50 51 14. 14.1 14.2 14.3 14.4 14.5 Password Protection Mode....................................... Password and Password Mode Locking Bit................. 64-bit Password ........................................................... Write Protect (WP#) ..................................................... High Voltage Sector Protection.................................... Temporary Sector Unprotect........................................ 52 52 52 53 53 55 Document Number: 002-00615 Rev. *B 22. Protect/Unprotect........................................................ 88 22.1 Controlled Erase Operations......................................... 90 23. Pin Capacitance .......................................................... 93 23.1 BGA Pin Capacitance ................................................... 93 23.2 TSOP Pin Capacitance ................................................. 93 24. Physical Dimensions .................................................. 94 24.1 VBG080--80-Ball Fine-pitch Ball Grid Array 8 x 11 mm Package (PL127J) .............. 94 24.2 VBH064--64-Ball Fine-pitch Ball Grid Array 8 x 11.6 mm package (PL127J)............ 95 24.3 VBK048--48-Ball Fine-pitch Ball Grid Array 8.15 x 6.15 mm package (PL032J and PL064J)...................................................... 96 24.4 VBU056--56-Ball Fine-pitch BGA 7 x 9mm package (PL064J and PL032J) ............. 97 24.5 TS056--20 x 14 mm, 56-pin TSOP (PL127J)............... 98 25. Revision Summary...................................................... 99 Page 3 of 101 S29PL-J 1. General Description The PL127J/PL129J/PL064J/PL032J is a 128/128/64/32 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8/8/4/2 Mwords. The devices are offered in the following packages: - 11 mm 8 mm, 80-ball Fine-pitch BGA standalone (PL127J) - 8 mm 11.6 mm, 64-ball Fine-pitch BGA multi-chip compatible (PL127J) - 8.15 mm 6.15 mm, 48-ball Fine-pitch BGA standalone (PL064J/PL032J) - 7 mm 9 mm, 56-ball Fine-pitch BGA multi-chip compatible (PL064J and PL032J) - 20 mm 14 mm, 56-pin TSOP (PL127J) The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed in-system or in standard EPROM programmers. A 12.0 V VPP is not required for write or erase operations. 2. Simultaneous Read/Write Operation with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into 4 banks, which can be considered to be four separate memory arrays as far as certain operations are concerned. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from another bank with zero latency (with two simultaneous operations operating at any one time). This releases the system from waiting for the completion of a program or erase operation, greatly improving system performance. The device can be organized in both top and bottom sector configurations. The banks are organized as follows: Bank PL127J Sectors PL064J Sectors PL032J Sectors A 16 Mbit (4 Kw 8 and 32 Kw 31) 8 Mbit (4 Kw 8 and 32 Kw 15) 4 Mbit (4 Kw 8 and 32 Kw 7) B 48 Mbit (32 Kw 96) 24 Mbit (32 Kw 48) 12 Mbit (32 Kw 24) C 48 Mbit (32 Kw 96) 24 Mbit (32 Kw 48) 12 Mbit (32 Kw 24) D 16 Mbit (4 Kw x 8 and 32 Kw 31) 8 Mbit (4 Kw 8 and 32 Kw 15) 4 Mbit (4 Kw 8 and 32 Kw 7) Bank PL129J Sectors CE# Control 1A 16 Mbit (4 Kw 8 and 32 Kw 31) CE1# 1B 48 Mbit (32 Kw 96) CE1# 2A 48 Mbit (32 Kw 96) CE2# 2B 16 Mbit (4 Kw 8 and 32 Kw 31) CE2# Document Number: 002-00615 Rev. *B Page 4 of 101 S29PL-J 2.1 Page Mode Features The page size is 8 words. After initial page access is accomplished, the page mode operation provides fast read access speed of random locations within that page. 2.2 Standard Flash Memory Features The device requires a single 3.0 volt power supply (2.7 V to 3.6 V) for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC 42.4 single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. If a read is needed from the Secured Silicon Sector area (One Time Program area) after an erase suspend, then the user must use the proper command sequence to enter and exit this region. The Program Suspend/Program Resume feature enables the user to hold the program operation to read data from any sector that is not selected for programming. If a read is needed from the Secured Silicon Sector area, Persistent Protection area, Dynamic Protection area, or the CFI area, after a program suspend, then the user must use the proper command sequence to enter and exit this region. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection. Document Number: 002-00615 Rev. *B Page 5 of 101 S29PL-J 3. Ordering Information The order number (Valid Combination) is formed by a valid combinations of the following: S29PL-J 55 BA W 00 0 Packing Type 0 = Tray 1 = Tube 2 = 7-inch Tape and Reel 3 = 13-inch Tape and Reel Model Number (Additional Ordering Options) 00 = 3.0V VIO, 80-ball 11 x 8 mm FBGA (VBG080) 01 = 1.8V VIO, 80-ball 11 x 8 mm FBGA (VBG080) 02 = 3.0V VIO, 64-ball 8 x 11.6 mm FBGA (VBH064) 12 = 3.0V VIO, 48-ball 8 x 6 mm FBGA (VBK048) 13 = 3.0V VIO, 56-pin 20 x 14 mm TSOP (TS056) 14 = 1.8V VIO, 56-pin 20 x 14 mm TSOP (TS056) 15 = 3.0V VIO, 56-ball 7 x 9 mm FBGA (VBU056) Temperature Range W = Wireless (-25C to +85C) I = Industrial (-40C to +85C) Package Type BA = Fine-Pitch Grid Array (FBGA), Standard BF = Fine-Pitch Grid Array (FBGA) Lead (Pb)-free TA = Thin Small Outline Package (TSOP) Standard Pinout Standard TF = Thin Small Outline Package (TSOP) Standard Pinout Lead (Pb)-free Clock Speed 55 = 55 ns (Contact factory for availability) 60 = 60 ns 65 = 65 ns 70 = 70 ns 80 = 80 ns Device Number/Description 128 Mbit (8 M x 16-Bit), 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit) CMOS Flash Memory, Simultaneous-Read/Write, Page-Mode Flash Memory, 3.0 V-only Read, Program, and Erase Document Number: 002-00615 Rev. *B Page 6 of 101 S29PL-J Valid Combinations to be Supported for this Device 128 Mb Products Based on 110 nm Floating Gate Technology Device Number/ Description Speed (ns) Package Type Temperature Range Additional Ordering Options CE# Configuration S29PL127J 60, 65, 70 BA, BF, TA, TF W, I 00, 13 Single CE# S29PL127J 80 BA, BF W, I 01 Single CE# S29PL127J 80 TA, TF W, I 14 Single CE# 64 Mb Products Based on 110 nm Floating Gate Technology Device Number/ Description Speed (ns) Package Type Temperature Range Additional Ordering Options S29PL064J 55, 60, 70 BA, BF W, I 12, 15 32 Mb Products Based on 110 nm Floating Gate Technology Device Number/ Description Speed (ns) Package Type Temperature Range Additional Ordering Options S29PL032J 55, 60, 70 BA, BF W, I 12, 15 Valid Combinations for BGA Packages Order Number (Note 1) Speed (ns) VIO Range PL129J, PL127J,PL064J, PL032J 55, 60, 65, 70 (3) 2.7-3.6 PL129J, PL127J 80 1.65-1.95 Notes 1. Please contact the factory for PL129J availability. 2. BGA package marking omits leading S29 and packing type designator from ordering part number. 3. 55 ns speed only supported for PL032J and PL127J. Valid Combinations for TSOP Packages Order Number Speed (ns) VIO Range S29PL127J 60, 70 2.7-3.6 Note TSOP package markings omit packing type designator from ordering part number. Document Number: 002-00615 Rev. *B Page 7 of 101 S29PL-J 4. Product Selector Guide Part Number S29PL032J/S29PL064J/S29PL0127J/S29PL129J VCC,VIO = 2.7 V - 3.6 V 55 (See Note) 60 65 -- 70 -- -- -- 80 -- 55 (See Note) 60 65 80 70 20 (See Note) 25 30 30 VCC = 2.7 V - 3.6 V, VIO = 1.65 V - 1.95 V (PL127J and PL129J only) Speed Option Max Access Time, ns (tACC) Max CE# Access, ns (tCE) Max Page Access, ns (tPACC) Max OE# Access, ns (tOE) Note 55 ns speed bin only supported for PL032J and PL064J. 5. Block Diagram DQ15-DQ0 RY/BY# VCC VSS Sector Switches VIO RESET# Input/Output Buffers Erase Voltage Generator WE# State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic CE# OE# Timer Amax-A3 Y-Decoder Address Latch VCC Detector X-Decoder Data Latch Y-Gating Cell Matrix A2-A0 Notes 1. RY/BY# is an open drain output. 2. Amax = A22 (PL127J), A21 (PL129J and PL064J), A20 (PL032J) 3. For PL129J, there are two CE# (CE1# and CE2#). Document Number: 002-00615 Rev. *B Page 8 of 101 S29PL-J 6. Simultaneous Read/Write Block Diagram VCC VSS OE# Mux Bank A Bank B X-Decoder Amax-A0 Status DQ15-DQ0 Control Mux DQ15-DQ0 CE# WP#/ACC STATE CONTROL & COMMAND REGISTER X-Decoder A22-A0 DQ0-DQ15 Bank C Address Bank C X-Decoder Amax-A0 Bank D Address Y-gate RESET# WE# DQ15-DQ0 Bank B Address DQ15-DQ0 RY/BY# DQ15-DQ0 A22-A0 X-Decoder Y-gate Bank A Address Amax-A0 Bank D Mux Note Amax = A22 (PL127J), A21 (PL064J), A20 (PL032J) Document Number: 002-00615 Rev. *B Page 9 of 101 S29PL-J 7. Simultaneous Read/Write Block Diagram (PL129J) VCC VSS OE# CE1#=L CE2#=H Mux Bank 1A Bank 1B X-Decoder A21-A0 RESET# WE# CE1# CE2# WP#/ACC STATE CONTROL & COMMAND REGISTER Status DQ15-DQ0 Control Mux DQ15-DQ0 CE1#=H CE2#=L X-Decoder Bank 2A Address Bank 2A X-Decoder Bank 2B Address Y-gate A21-A0 DQ0-DQ15 A21-A0 DQ15-DQ0 Bank 1B Address DQ15-DQ0 RY/BY# DQ15-DQ0 A21-A0 X-Decoder Y-gate Bank 1A Address A21-A0 Bank 2B Mux Note Amax = A21 (PL129J) Document Number: 002-00615 Rev. *B Page 10 of 101 S29PL-J 8. 8.1 8.1.1 Connection Diagrams Special Package Handling Instructions TSOP, BGA, PDIP, SSOP, and PLCC Packages Special handling is required for Flash Memory products in molded packages. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150C for prolonged periods of time. 8.1.2 FBGA Packages Special handling is required for Flash Memory products in FBGA packages. Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150C for prolonged periods of time. 8.2 80-Ball Fine-Pitch BGA--PL127J Figure 8.1 80-Ball Fine-Pitch BGA, Top View, Balls Facing Down--PL127J A8 B8 C8 D8 E8 F8 G8 H8 J8 K8 L8 M8 NC NC NC A22 NC VIO VSS NC NC NC NC NC A7 B7 C7 D7 E7 F7 G7 H7 J7 K7 L7 M7 NC NC A13 A12 A14 A15 A16 NC DQ15 VSS NC NC C6 D6 E6 F6 G6 H6 J6 K6 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 C5 D5 E5 F5 G5 H5 J5 K5 WE# RESET# A21 A19 DQ5 DQ12 VCC DQ4 C4 D4 RY/BY# WP#/ACC E4 F4 G4 H4 J4 K4 A18 A20 DQ2 DQ10 DQ11 DQ3 C3 D3 E3 F3 G3 H3 J3 K3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A2 B2 C2 D2 E2 F2 G2 H2 J2 K2 L2 M2 NC NC A3 A4 A2 A1 A0 CE# OE# VSS NC NC A1 B1 C1 D1 E1 F1 G1 H1 J1 K1 L1 M1 NC NC NC NC NC NC NC VIO NC NC NC NC Document Number: 002-00615 Rev. *B Page 11 of 101 S29PL-J 8.3 64-Ball Fine-Pitch BGA--MCP Compatible--PL127J Figure 8.2 64-Ball Fine-Pitch BGA, MCP Compatible, Top View, Balls Facing Down--PL127J A1 A10 NC NC C3 C4 A7 RFU D2 D3 D4 A3 A6 RFU E2 E3 E4 A2 A5 A18 F2 F3 F4 A1 A4 A17 B5 B6 RFU RFU C5 C6 WP#/ACC WE# D5 D6 RESET# RFU E5 E6 RY/BY # A20 C7 C8 A8 A11 D7 D8 D9 A19 A12 A15 E7 E8 E9 A13 A21 F7 F8 F9 A10 A14 A22 A9 G2 G3 G4 G7 G8 A0 VSS DQ1 DQ6 RFU G9 A16 H2 H3 H4 H5 H6 H7 H8 H9 CE#f1 OE# DQ9 DQ3 DQ4 DQ13 DQ15 VCCf J2 J3 J4 J5 J6 J7 J8 J9 RFU DQ0 DQ10 VCCf RFU DQ12 DQ7 VSS K3 K4 K5 K6 K7 K8 DQ8 DQ2 DQ11 RFU DQ5 DQ14 L5 L6 RFU RFU M1 M10 NC NC Document Number: 002-00615 Rev. *B Page 12 of 101 S29PL-J 8.4 48-Ball Fine-Pitch BGA, PL064J and PL032J Figure 8.3 48-Ball Fine-Pitch BGA, Top View, Balls Facing Down--PL064J--PL032J: C4(A21)=NC A6 B6 C6 D6 E6 F6 G6 H6 A13 A12 A14 A15 A16 NC DQ15 VSS A5 B5 C5 D5 E5 F5 G5 H5 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 A4 B4 C4 D4 E4 F4 G4 H4 WE# RESET# A21 A19 DQ5 DQ12 VCC DQ4 A3 B3 C3 D3 E3 F3 G3 H3 A18 A20 DQ2 DQ10 DQ11 DQ3 RY/BY# WP#/ACC A2 B2 C2 D2 E2 F2 G2 H2 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A1 B1 C1 D1 E1 F1 G1 H1 A3 A4 A2 A1 A0 CE# OE# VSS Document Number: 002-00615 Rev. *B Page 13 of 101 S29PL-J 8.5 56-Pin TSOP 20 x 14 mm Figure 8.4 56-Pin TSOP 20 x 14 mm Configuration--PL127J RESET# RY/BY# A0 A1 A2 A3 A4 A5 VCC DQ0 DQ1 DQ2 DQ3 VSSQ VCCQ DQ4 DQ5 DQ6 DQ7 VSS NC A6 A7 A8 A9 A10 A11 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 WP#/ACC WE# NC A22 A21 A20 OE# NC CE# VSS DQ15 DQ14 DQ13 DQ12 VSSQ VCCQ DQ11 DQ10 DQ9 DQ8 VCC A19 A18 A17 A16 A15 A14 A13 For this family of products, a single multi-chip compatible package (TSOP) is offered for each density to allow both standalone and multi-chip qualification using a single, adaptable package. This new methodology allows package standardization resulting in faster development. The multi-chip compatible package includes all the pins required for standalone device operation and verification. In addition, extra pins are included for insertion of common data storage or logic devices to be used for multi-chip products. If a standalone device is required, the extra multi-chip specific pins are not connected and the standalone device operates normally. The multi-chip compatible package sizes were chosen to serve the largest number of combinations possible. There are only a few cases where a larger package size would be required to accommodate the multi-chip combination. This multi-chip compatible package set does not allow for direct package migration from the Am29BDS128H, Am29BDS128G, Am29BDS640G products, which use legacy standalone packages. Document Number: 002-00615 Rev. *B Page 14 of 101 S29PL-J 8.6 56-Ball Fine-Pitch Ball Grid Array, PL064J and PL032J Figure 8.5 56-ball Fine-Pitch BGA, Top View, Balls Facing Down,--PL064J and PL032J, A2 A3 A4 A5 A6 A7 A7 RFU WP/ACC WE# A8 A11 B1 B2 B3 B4 B5 B6 B7 B8 A3 A6 RFU RST# RFU A19 A12 A15 C1 C2 C3 C4 C5 C6 C7 C8 A2 A5 A18 RY/BY# A20 A9 A13 A21 D1 D2 D3 D6 D7 D8 A1 A4 A17 A10 A14 RFU E1 E2 E3 E6 E7 E8 A0 VSS DQ1 DQ6 RFU A16 F1 F2 F3 F4 F5 F6 F7 F8 CE1#f OE# DQ9 DQ3 DQ4 DQ13 DQ15 RFU G1 G2 G3 G4 G5 G6 G7 G8 RFU DQ0 DQ10 VCCf RFU DQ12 DQ7 VSS H2 H3 H4 H5 H6 H7 DQ8 DQ2 DQ11 RFU DQ5 DQ14 Document Number: 002-00615 Rev. *B Page 15 of 101 S29PL-J 9. Pin Description Table 9.1 Pin Description Amax-A0 DQ15-DQ0 CE# Address bus 16-bit data inputs/outputs/float Chip Enable Inputs OE# Output Enable Input WE# Write Enable VSS Device Ground NC Not Connected. No device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. The connection may safely be used for routing space for a signal on a Printed Circuit Board (PCB). RFU Reserved for Future Use. Not currently connected internally but the pin/ball location should be left unconnected and unused by PCB routing channel for future compatibility. The pin/ball may be used by a signal in the future. RY/BY# Ready/Busy output and open drain. When RY/BY#= VIH, the device is ready to accept read operations and commands. When RY/BY#= VOL, the device is either executing an embedded algorithm or the device is executing a hardware reset operation. WP#/ACC Write Protect/Acceleration Input. When WP#/ACC= VIL, the highest and lowest two 4K-word sectors are write protected regardless of other sector protection configurations. When WP#/ACC= VIH, these sector are unprotected unless the DYB or PPB is programmed. When WP#/ACC= VHH, program and erase operations are accelerated. VIO Input/Output Buffer Power Supply (1.65 V to 1.95 V (for PL127J and PL129J) or 2.7 V to 3.6 V (for all PLxxxJ devices)) VCC Chip Power Supply (2.7 V to 3.6 V or 2.7 to 3.3 V) RESET# CE1#, CE2# Hardware Reset Pin Chip Enable Inputs. CE1# controls the 64Mb in Banks 1A and 1B. CE2# controls the 64 Mb in Banks 2A and 2B. (Only for PL129J) Note Amax = A22 (PL127J), A21 (PL129J and PL064J), A20 (PL032J) Document Number: 002-00615 Rev. *B Page 16 of 101 S29PL-J 10. Logic Symbol max+1 Amax-A0 16 DQ15-DQ0 CE# OE# WE# WP#/ACC RY/BY# RESET# VIO (VCCQ) 11. Device Bus Operations This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 11.1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Table 11.1 PL127J Device Bus Operations CE# OE# WE# RESET# WP#/ ACC Addresses (Amax-A0) DQ15-DQ0 Read L L H H X AIN DOUT Write L H L H X (Note 2) AIN DIN VIO0.3 V X X VIO 0.3 V X (Note 2) X High-Z Output Disable L H H H X X High-Z Reset X X X L X X High-Z Temporary Sector Unprotect (High Voltage) X X X VID X AIN DIN Operation Standby Document Number: 002-00615 Rev. *B Page 17 of 101 S29PL-J Table 11.2 PL129J Device Bus Operations Operation Read Write CE1# CE2# L H H L L H H L OE# WE# RESET# WP#/ACC Addresses (A21-A0) DQ15-DQ0 L H H X AIN DOUT H L H X (Note 2) AIN DIN X X VIO 0.3 V X X High-Z VIO0.3 V VIO 0.3 V Standby Output Disable L L H H H X X High-Z Reset X X X X L X X High-Z Temporary Sector Unprotect (High Voltage) X X X X VID X AIN DIN Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5-12.5 V, VHH = 8.5-9.5 V, X = Don't Care, SA = Sector Address, AIN = Address In, DIN = Data In, DOUT = Data Out Notes 1. The sector protect and sector unprotect functions may also be implemented via programming equipment. See High Voltage Sector Protection on page 53. 2. WP#/ACC must be high when writing to upper two and lower two sectors. 11.1 Requirements for Reading Array Data To read array data from the outputs, the system must drive the OE# and appropriate CE# pins (For PL129J - CE1#/CE2# pins) to VIL. In PL129J, CE1# and CE2# are the power control and select the lower (CE1#) or upper (CE2#) halves of the device. CE# is the power control. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. Each bank remains enabled for read access until the command register contents are altered. Refer to Table 22.3 on page 91 for timing specifications and to Figure 21.3 on page 81 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. 11.1.1 Random Read (Non-Page Read) Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (tCE) is the delay from the stable addresses and stable CE# to valid data at the output inputs. The output enable access time is the delay from the falling edge of the OE# to valid data at the output inputs (assuming the addresses have been stable for at least tACC-tOE time). 11.1.2 Page Mode Read The device is capable of fast page mode read and is compatible with the page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. Address bits Amax-A3 select an 8 word page, and address bits A2-A0 select a specific word within that page. This is an asynchronous operation with the microprocessor supplying the specific word location. The random or initial page access is tACC or tCE and subsequent page read accesses (as long as the locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# (CE1# and CE#2 in PL129J) is deasserted (=VIH), the reassertion of CE# (CE1# or CE#2 in PL129J) for subsequent access has access time of tACC or tCE. Here again, CE# (CE1# /CE#2 in PL129J)selects the device and OE# is the output control and should be used to gate data to the output inputs if the device is selected. Fast page mode accesses are obtained by keeping Amax-A3 constant and changing A2-A0 to select the specific word within that page. Document Number: 002-00615 Rev. *B Page 18 of 101 S29PL-J Table 11.3 Page Select 11.2 Word A2 A1 A0 Word 0 0 0 0 Word 1 0 0 1 Word 2 0 1 0 Word 3 0 1 1 Word 4 1 0 0 Word 5 1 0 1 Word 6 1 1 0 Word 7 1 1 1 Simultaneous Read/Write Operation In addition to the conventional features (read, program, erase-suspend read, erase-suspend program, and program-suspend read), the device is capable of reading data from one bank of memory while a program or erase operation is in progress in another bank of memory (simultaneous operation). The bank can be selected by bank addresses (PL127J: A22-A20, PL129J and PL064J: A21- A19, PL032J: A20-A18) with zero latency. The simultaneous operation can execute multi-function mode in the same bank. Table 11.4 Bank Select 11.3 Bank PL127J: A22-A20, PL064J: A21-A19, PL032J: A20-A18 Bank A 000 Bank B 001, 010, 011 Bank C 100, 101, 110 Bank D 111 Bank CE1# CE2# PL129J: A21-A20 Bank 1A 0 1 00 Bank 1B 0 1 01, 10, 11 Bank 2A 1 0 00, 01, 10 Bank 2B 1 0 11 Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# (CE1# or CE#2 in PL129J) to VIL, and OE# to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required to program a word, instead of four. Word Program Command Sequence on page 63 has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Table 11.4 on page 19 indicates the set of address space that each sector occupies. A "bank address" is the set of address bits required to uniquely select a bank. Similarly, a "sector address" refers to the address bits required to uniquely select a sector. Command Definitions on page 61 has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. ICC2 in the DC Characteristics on page 78 represents the active current specification for the write mode. See the timing specification tables and timing diagrams in section Reset on page 82 for write operations. Document Number: 002-00615 Rev. *B Page 19 of 101 S29PL-J 11.3.1 Accelerated Program Operation The device offers accelerated program operations through the ACC function. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP#/ ACC pin returns the device to normal operation. Note that VHH must not be asserted on WP#/ACC for operations other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin should be raised to VCC when not in use. That is, the WP#/ACC pin should not be left floating or unconnected; inconsistent behavior of the device may result. 11.3.2 Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ15-DQ0. Standard read cycle timings apply in this mode. Refer to the Table 11.9, Secured Silicon Sector Addresses on page 42 and Autoselect Command Sequence on page 62 for more information. 11.4 Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# (CE1#,CE#2 in PL129J) and RESET# pins are both held at VIO 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# (CE1#,CE#2 in PL129J) and RESET# are held at VIH, but not within VIO 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 in DC Characteristics on page 78 represents the CMOS standby current specification. 11.5 Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. Note that during automatic sleep mode, OE# must be at VIH before the device reduces current to the stated sleep mode specification. ICC5 in DC Characteristics on page 78 represents the automatic sleep mode current specification. 11.6 RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/ write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is "1"), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. Refer to the tables in AC Characteristic on page 79 for RESET# parameters and to Figure 21.5 on page 82 for the timing diagram. Document Number: 002-00615 Rev. *B Page 20 of 101 S29PL-J 11.7 Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins (except for RY/BY#) are placed in the highest Impedance state Table 11.5 PL127J Sector Architecture Bank A Bank A Bank Sector Sector Address (A22-A12) Sector Size (Kwords) Address Range (x16) SA0 00000000000 4 000000h-000FFFh SA1 00000000001 4 001000h-001FFFh SA2 00000000010 4 002000h-002FFFh SA3 00000000011 4 003000h-003FFFh SA4 00000000100 4 004000h-004FFFh SA5 00000000101 4 005000h-005FFFh SA6 00000000110 4 006000h-006FFFh SA7 00000000111 4 007000h-007FFFh SA8 00000001XXX 32 008000h-00FFFFh SA9 00000010XXX 32 010000h-017FFFh SA10 00000011XXX 32 018000h-01FFFFh SA11 00000100XXX 32 020000h-027FFFh SA12 00000101XXX 32 028000h-02FFFFh SA13 00000110XXX 32 030000h-037FFFh 038000h-03FFFFh SA14 00000111XXX 32 SA15 00001000XXX 32 040000h-047FFFh SA16 00001001XXX 32 048000h-04FFFFh SA17 00001010XXX 32 050000h-057FFFh SA18 00001011XXX 32 058000h-05FFFFh SA19 00001100XXX 32 060000h-067FFFh SA20 00001101XXX 32 068000h-06FFFFh SA21 00001110XXX 32 070000h-077FFFh 078000h-07FFFFh SA22 00001111XXX 32 SA23 00010000XXX 32 080000h-087FFFh SA24 00010001XXX 32 088000h-08FFFFh SA25 00010010XXX 32 090000h-097FFFh SA26 00010011XXX 32 098000h-09FFFFh SA27 00010100XXX 32 0A0000h-0A7FFFh SA28 00010101XXX 32 0A8000h-0AFFFFh SA29 00010110XXX 32 0B0000h-0B7FFFh SA30 00010111XXX 32 0B8000h-0BFFFFh SA31 00011000XXX 32 0C0000h-0C7FFFh SA32 00011001XXX 32 0C8000h-0CFFFFh SA33 00011010XXX 32 0D0000h-0D7FFFh SA34 00011011XXX 32 0D8000h-0DFFFFh SA35 00011100XXX 32 0E0000h-0E7FFFh SA36 00011101XXX 32 0E8000h-0EFFFFh SA37 00011110XXX 32 0F0000h-0F7FFFh SA38 00011111XXX 32 0F8000h-0FFFFFh Document Number: 002-00615 Rev. *B Page 21 of 101 S29PL-J Table 11.5 PL127J Sector Architecture (Continued) Bank B Bank Sector Sector Address (A22-A12) Sector Size (Kwords) SA39 00100000XXX 32 Address Range (x16) 100000h-107FFFh SA40 00100001XXX 32 108000h-10FFFFh SA41 00100010XXX 32 110000h-117FFFh SA42 00100011XXX 32 118000h-11FFFFh SA43 00100100XXX 32 120000h-127FFFh SA44 00100101XXX 32 128000h-12FFFFh SA45 00100110XXX 32 130000h-137FFFh SA46 00100111XXX 32 138000h-13FFFFh SA47 00101000XXX 32 140000h-147FFFh SA48 00101001XXX 32 148000h-14FFFFh SA49 00101010XXX 32 150000h-157FFFh SA50 00101011XXX 32 158000h-15FFFFh SA51 00101100XXX 32 160000h-167FFFh SA52 00101101XXX 32 168000h-16FFFFh SA53 00101110XXX 32 170000h-177FFFh SA54 00101111XXX 32 178000h-17FFFFh SA55 00110000XXX 32 180000h-187FFFh SA56 00110001XXX 32 188000h-18FFFFh SA57 00110010XXX 32 190000h-197FFFh SA58 00110011XXX 32 198000h-19FFFFh SA59 00110100XXX 32 1A0000h-1A7FFFh SA60 00110101XXX 32 1A8000h-1AFFFFh SA61 00110110XXX 32 1B0000h-1B7FFFh SA62 00110111XXX 32 1B8000h-1BFFFFh SA63 00111000XXX 32 1C0000h-1C7FFFh SA64 00111001XXX 32 1C8000h-1CFFFFh SA65 00111010XXX 32 1D0000h-1D7FFFh Document Number: 002-00615 Rev. *B Page 22 of 101 S29PL-J Table 11.5 PL127J Sector Architecture (Continued) Bank B Bank Sector Sector Address (A22-A12) Sector Size (Kwords) Address Range (x16) SA66 00111011XXX 32 1D8000h-1DFFFFh SA67 00111100XXX 32 1E0000h-1E7FFFh SA68 00111101XXX 32 1E8000h-1EFFFFh SA69 00111110XXX 32 1F0000h-1F7FFFh SA70 00111111XXX 32 1F8000h-1FFFFFh SA71 01000000XXX 32 200000h-207FFFh SA72 01000001XXX 32 208000h-20FFFFh SA73 01000010XXX 32 210000h-217FFFh SA74 01000011XXX 32 218000h-21FFFFh SA75 01000100XXX 32 220000h-227FFFh SA76 01000101XXX 32 228000h-22FFFFh SA77 01000110XXX 32 230000h-237FFFh SA78 01000111XXX 32 238000h-23FFFFh SA79 01001000XXX 32 240000h-247FFFh SA80 01001001XXX 32 248000h-24FFFFh SA81 01001010XXX 32 250000h-257FFFh SA82 01001011XXX 32 258000h-25FFFFh SA83 01001100XXX 32 260000h-267FFFh SA84 01001101XXX 32 268000h-26FFFFh SA85 01001110XXX 32 270000h-277FFFh SA86 01001111XXX 32 278000h-27FFFFh SA87 01010000XXX 32 280000h-287FFFh SA88 01010001XXX 32 288000h-28FFFFh SA89 01010010XXX 32 290000h-297FFFh SA90 01010011XXX 32 298000h-29FFFFh SA91 01010100XXX 32 2A0000h-2A7FFFh SA92 01010101XXX 32 2A8000h-2AFFFFh SA93 01010110XXX 32 2B0000h-2B7FFFh SA94 01010111XXX 32 2B8000h-2BFFFFh SA95 01011000XXX 32 2C0000h-2C7FFFh SA96 01011001XXX 32 2C8000h-2CFFFFh SA97 01011010XXX 32 2D0000h-2D7FFFh SA98 01011011XXX 32 2D8000h-2DFFFFh SA99 01011100XXX 32 2E0000h-2E7FFFh SA100 01011101XXX 32 2E8000h-2EFFFFh SA101 01011110XXX 32 2F0000h-2F7FFFh SA102 01011111XXX 32 2F8000h-2FFFFFh SA103 01100000XXX 32 300000h-307FFFh SA104 01100001XXX 32 308000h-30FFFFh SA105 01100010XXX 32 310000h-317FFFh SA106 01100011XXX 32 318000h-31FFFFh SA107 01100100XXX 32 320000h-327FFFh SA108 01100101XXX 32 328000h-32FFFFh SA109 01100110XXX 32 330000h-337FFFh SA110 01100111XXX 32 338000h-33FFFFh SA111 01101000XXX 32 340000h-347FFFh Document Number: 002-00615 Rev. *B Page 23 of 101 S29PL-J Table 11.5 PL127J Sector Architecture (Continued) Bank B Bank Sector Sector Address (A22-A12) Sector Size (Kwords) SA115 01101100XXX 32 Address Range (x16) 360000h-367FFFh SA116 01101101XXX 32 368000h-36FFFFh SA117 01101110XXX 32 370000h-377FFFh SA118 01101111XXX 32 378000h-37FFFFh SA119 01110000XXX 32 380000h-387FFFh SA120 01110001XXX 32 388000h-38FFFFh SA121 01110010XXX 32 390000h-397FFFh SA122 01110011XXX 32 398000h-39FFFFh SA123 01110100XXX 32 3A0000h-3A7FFFh SA124 01110101XXX 32 3A8000h-3AFFFFh SA125 01110110XXX 32 3B0000h-3B7FFFh SA126 01110111XXX 32 3B8000h-3BFFFFh SA127 01111000XXX 32 3C0000h-3C7FFFh SA128 01111001XXX 32 3C8000h-3CFFFFh SA129 01111010XXX 32 3D0000h-3D7FFFh SA130 01111011XXX 32 3D8000h-3DFFFFh SA131 01111100XXX 32 3E0000h-3E7FFFh SA132 01111101XXX 32 3E8000h-3EFFFFh SA133 01111110XXX 32 3F0000h-3F7FFFh SA134 01111111XXX 32 3F8000h-3FFFFFh Document Number: 002-00615 Rev. *B Page 24 of 101 S29PL-J Table 11.5 PL127J Sector Architecture (Continued) Bank C Bank Sector Sector Address (A22-A12) Sector Size (Kwords) SA135 10000000XXX 32 Address Range (x16) 400000h-407FFFh SA136 10000001XXX 32 408000h-40FFFFh SA137 10000010XXX 32 410000h-417FFFh SA138 10000011XXX 32 418000h-41FFFFh SA139 10000100XXX 32 420000h-427FFFh SA140 10000101XXX 32 428000h-42FFFFh SA141 10000110XXX 32 430000h-437FFFh SA142 10000111XXX 32 438000h-43FFFFh SA143 10001000XXX 32 440000h-447FFFh SA144 10001001XXX 32 448000h-44FFFFh SA145 10001010XXX 32 450000h-457FFFh SA146 10001011XXX 32 458000h-45FFFFh SA147 10001100XXX 32 460000h-467FFFh SA148 10001101XXX 32 468000h-46FFFFh SA149 10001110XXX 32 470000h-477FFFh SA150 10001111XXX 32 478000h-47FFFFh SA151 10010000XXX 32 480000h-487FFFh SA152 10010001XXX 32 488000h-48FFFFh SA153 10010010XXX 32 490000h-497FFFh SA154 10010011XXX 32 498000h-49FFFFh SA155 10010100XXX 32 4A0000h-4A7FFFh SA156 10010101XXX 32 4A8000h-4AFFFFh SA157 10010110XXX 32 4B0000h-4B7FFFh SA158 10010111XXX 32 4B8000h-4BFFFFh SA159 10011000XXX 32 4C0000h-4C7FFFh SA160 10011001XXX 32 4C8000h-4CFFFFh SA161 10011010XXX 32 4D0000h-4D7FFFh SA162 10011011XXX 32 4D8000h-4DFFFFh SA163 10011100XXX 32 4E0000h-4E7FFFh Document Number: 002-00615 Rev. *B Page 25 of 101 S29PL-J Table 11.5 PL127J Sector Architecture (Continued) Bank C Bank Sector Sector Address (A22-A12) Sector Size (Kwords) Address Range (x16) SA164 10011101XXX 32 4E8000h-4EFFFFh SA165 10011110XXX 32 4F0000h-4F7FFFh SA166 10011111XXX 32 4F8000h-4FFFFFh SA167 10100000XXX 32 500000h-507FFFh SA168 10100001XXX 32 508000h-50FFFFh SA169 10100010XXX 32 510000h-517FFFh SA170 10100011XXX 32 518000h-51FFFFh SA171 10100100XXX 32 520000h-527FFFh SA172 10100101XXX 32 528000h-52FFFFh SA173 10100110XXX 32 530000h-537FFFh 538000h-53FFFFh SA174 10100111XXX 32 SA175 10101000XXX 32 540000h-547FFFh SA176 10101001XXX 32 548000h-54FFFFh SA177 10101010XXX 32 550000h-557FFFh SA178 10101011XXX 32 558000h-15FFFFh SA179 10101100XXX 32 560000h-567FFFh SA180 10101101XXX 32 568000h-56FFFFh SA181 10101110XXX 32 570000h-577FFFh 578000h-57FFFFh SA182 10101111XXX 32 SA183 10110000XXX 32 580000h-587FFFh SA184 10110001XXX 32 588000h-58FFFFh SA185 10110010XXX 32 590000h-597FFFh SA186 10110011XXX 32 598000h-59FFFFh SA187 10110100XXX 32 5A0000h-5A7FFFh SA188 10110101XXX 32 5A8000h-5AFFFFh SA189 10110110XXX 32 5B0000h-5B7FFFh SA190 10110111XXX 32 5B8000h-5BFFFFh SA191 10111000XXX 32 5C0000h-5C7FFFh SA192 10111001XXX 32 5C8000h-5CFFFFh SA193 10111010XXX 32 5D0000h-5D7FFFh SA194 10111011XXX 32 5D8000h-5DFFFFh SA195 10111100XXX 32 5E0000h-5E7FFFh SA196 10111101XXX 32 5E8000h-5EFFFFh SA197 10111110XXX 32 5F0000h-5F7FFFh 5F8000h-5FFFFFh SA198 10111111XXX 32 SA199 11000000XXX 32 600000h-607FFFh SA200 11000001XXX 32 608000h-60FFFFh SA201 11000010XXX 32 610000h-617FFFh 618000h-61FFFFh SA202 11000011XXX 32 SA203 11000100XXX 32 620000h-627FFFh SA204 11000101XXX 32 628000h-62FFFFh SA205 11000110XXX 32 630000h-637FFFh 638000h-63FFFFh SA206 11000111XXX 32 SA207 11001000XXX 32 640000h-647FFFh SA208 11001001XXX 32 648000h-64FFFFh SA209 11001010XXX 32 650000h-657FFFh SA210 11001011XXX 32 658000h-65FFFFh Document Number: 002-00615 Rev. *B Page 26 of 101 S29PL-J Table 11.5 PL127J Sector Architecture (Continued) Bank C Bank Sector Sector Address (A22-A12) Sector Size (Kwords) SA213 11001110XXX 32 Address Range (x16) 670000h-677FFFh SA214 11001111XXX 32 678000h-67FFFFh SA215 11010000XXX 32 680000h-687FFFh SA216 11010001XXX 32 688000h-68FFFFh SA217 11010010XXX 32 690000h-697FFFh SA218 11010011XXX 32 698000h-69FFFFh SA219 11010100XXX 32 6A0000h-6A7FFFh SA220 11010101XXX 32 6A8000h-6AFFFFh SA221 11010110XXX 32 6B0000h-6B7FFFh SA222 11010111XXX 32 6B8000h-6BFFFFh SA223 11011000XXX 32 6C0000h-6C7FFFh SA224 11011001XXX 32 6C8000h-6CFFFFh SA225 11011010XXX 32 6D0000h-6D7FFFh SA226 11011011XXX 32 6D8000h-6DFFFFh SA227 11011100XXX 32 6E0000h-6E7FFFh SA228 11011101XXX 32 6E8000h-6EFFFFh SA229 11011110XXX 32 6F0000h-6F7FFFh SA230 11011111XXX 32 6F8000h-6FFFFFh Document Number: 002-00615 Rev. *B Page 27 of 101 S29PL-J Table 11.5 PL127J Sector Architecture (Continued) Bank D Bank D Bank Sector Sector Address (A22-A12) Sector Size (Kwords) SA231 11100000XXX 32 Address Range (x16) 700000h-707FFFh SA232 11100001XXX 32 708000h-70FFFFh SA233 11100010XXX 32 710000h-717FFFh SA234 11100011XXX 32 718000h-71FFFFh SA235 11100100XXX 32 720000h-727FFFh SA236 11100101XXX 32 728000h-72FFFFh SA237 11100110XXX 32 730000h-737FFFh SA238 11100111XXX 32 738000h-73FFFFh SA239 11101000XXX 32 740000h-747FFFh SA240 11101001XXX 32 748000h-74FFFFh SA241 11101010XXX 32 750000h-757FFFh SA242 11101011XXX 32 758000h-75FFFFh SA243 11101100XXX 32 760000h-767FFFh SA244 11101101XXX 32 768000h-76FFFFh SA245 11101110XXX 32 770000h-777FFFh SA246 11101111XXX 32 778000h-77FFFFh SA247 11110000XXX 32 780000h-787FFFh SA248 11110001XXX 32 788000h-78FFFFh SA249 11110010XXX 32 790000h-797FFFh SA250 11110011XXX 32 798000h-79FFFFh SA251 11110100XXX 32 7A0000h-7A7FFFh SA252 11110101XXX 32 7A8000h-7AFFFFh SA253 11110110XXX 32 7B0000h-7B7FFFh SA254 11110111XXX 32 7B8000h-7BFFFFh SA255 11111000XXX 32 7C0000h-7C7FFFh SA256 11111001XXX 32 7C8000h-7CFFFFh SA257 11111010XXX 32 7D0000h-7D7FFFh SA258 11111011XXX 32 7D8000h-7DFFFFh SA259 11111100XXX 32 7E0000h-7E7FFFh SA260 11111101XXX 32 7E8000h-7EFFFFh SA261 11111110XXX 32 7F0000h-7F7FFFh SA262 11111111000 4 7F8000h-7F8FFFh SA263 11111111001 4 7F9000h-7F9FFFh SA264 11111111010 4 7FA000h-7FAFFFh SA265 11111111011 4 7FB000h-7FBFFFh SA266 11111111100 4 7FC000h-7FCFFFh SA267 11111111101 4 7FD000h-7FDFFFh SA268 11111111110 4 7FE000h-7FEFFFh SA269 11111111111 4 7FF000h-7FFFFFh Document Number: 002-00615 Rev. *B Page 28 of 101 S29PL-J Table 11.6 PL064J Sector Architecture Bank B Bank A Bank Sector Sector Address (A22-A12) Sector Size (Kwords) Address Range (x16) SA0 0000000000 4 000000h-000FFFh SA1 0000000001 4 001000h-001FFFh SA2 0000000010 4 002000h-002FFFh SA3 0000000011 4 003000h-003FFFh SA4 0000000100 4 004000h-004FFFh SA5 0000000101 4 005000h-005FFFh SA6 0000000110 4 006000h-006FFFh SA7 0000000111 4 007000h-007FFFh SA8 0000001XXX 32 008000h-00FFFFh SA9 0000010XXX 32 010000h-017FFFh 018000h-01FFFFh SA10 0000011XXX 32 SA11 0000100XXX 32 020000h-027FFFh SA12 0000101XXX 32 028000h-02FFFFh SA13 0000110XXX 32 030000h-037FFFh 038000h-03FFFFh SA14 0000111XXX 32 SA15 0001000XXX 32 040000h-047FFFh SA16 0001001XXX 32 048000h-04FFFFh SA17 0001010XXX 32 050000h-057FFFh SA18 0001011XXX 32 058000h-05FFFFh SA19 0001100XXX 32 060000h-067FFFh SA20 0001101XXX 32 068000h-06FFFFh SA21 0001110XXX 32 070000h-077FFFh 078000h-07FFFFh SA22 0001111XXX 32 SA23 0010000XXX 32 080000h-087FFFh SA24 0010001XXX 32 088000h-08FFFFh SA25 0010010XXX 32 090000h-097FFFh SA26 0010011XXX 32 098000h-09FFFFh SA27 0010100XXX 32 0A0000h-0A7FFFh SA28 0010101XXX 32 0A8000h-0AFFFFh SA29 0010110XXX 32 0B0000h-0B7FFFh SA30 0010111XXX 32 0B8000h-0BFFFFh SA31 0011000XXX 32 0C0000h-0C7FFFh SA32 0011001XXX 32 0C8000h-0CFFFFh SA33 0011010XXX 32 0D0000h-0D7FFFh SA34 0011011XXX 32 0D8000h-0DFFFFh SA35 0011100XXX 32 0E0000h-0E7FFFh SA36 0011101XXX 32 0E8000h-0EFFFFh Document Number: 002-00615 Rev. *B Page 29 of 101 S29PL-J Table 11.6 PL064J Sector Architecture (Continued) Bank B Bank Sector Sector Address (A22-A12) Sector Size (Kwords) SA37 0011110XXX 32 Address Range (x16) 0F0000h-0F7FFFh SA38 0011111XXX 32 0F8000h-0FFFFFh SA39 0100000XXX 32 100000h-107FFFh SA40 0100001XXX 32 108000h-10FFFFh SA41 0100010XXX 32 110000h-117FFFh SA42 0100011XXX 32 118000h-11FFFFh SA43 0100100XXX 32 120000h-127FFFh SA44 0100101XXX 32 128000h-12FFFFh SA45 0100110XXX 32 130000h-137FFFh SA46 0100111XXX 32 138000h-13FFFFh SA47 0101000XXX 32 140000h-147FFFh SA48 0101001XXX 32 148000h-14FFFFh SA49 0101010XXX 32 150000h-157FFFh SA50 0101011XXX 32 158000h-15FFFFh SA51 0101100XXX 32 160000h-167FFFh SA52 0101101XXX 32 168000h-16FFFFh SA53 0101110XXX 32 170000h-177FFFh SA54 0101111XXX 32 178000h-17FFFFh SA55 0110000XXX 32 180000h-187FFFh SA56 0110001XXX 32 188000h-18FFFFh SA57 0110010XXX 32 190000h-197FFFh SA58 0110011XXX 32 198000h-19FFFFh SA59 0110100XXX 32 1A0000h-1A7FFFh SA60 0110101XXX 32 1A8000h-1AFFFFh SA61 0110110XXX 32 1B0000h-1B7FFFh SA62 0110111XXX 32 1B8000h-1BFFFFh SA63 0111000XXX 32 1C0000h-1C7FFFh SA64 0111001XXX 32 1C8000h-1CFFFFh SA65 0111010XXX 32 1D0000h-1D7FFFh SA66 0111011XXX 32 1D8000h-1DFFFFh SA67 0111100XXX 32 1E0000h-1E7FFFh SA68 0111101XXX 32 1E8000h-1EFFFFh SA69 0111110XXX 32 1F0000h-1F7FFFh SA70 0111111XXX 32 1F8000h-1FFFFFh Document Number: 002-00615 Rev. *B Page 30 of 101 S29PL-J Table 11.6 PL064J Sector Architecture (Continued) Bank C Bank Sector Sector Address (A22-A12) Sector Size (Kwords) SA71 1000000XXX 32 200000h-207FFFh SA72 1000001XXX 32 208000h-20FFFFh SA73 1000010XXX 32 210000h-217FFFh SA74 1000011XXX 32 218000h-21FFFFh SA75 1000100XXX 32 220000h-227FFFh SA76 1000101XXX 32 228000h-22FFFFh SA77 1000110XXX 32 230000h-237FFFh SA78 1000111XXX 32 238000h-23FFFFh SA79 1001000XXX 32 240000h-247FFFh SA80 1001001XXX 32 248000h-24FFFFh SA81 1001010XXX 32 250000h-257FFFh SA82 1001011XXX 32 258000h-25FFFFh SA83 1001100XXX 32 260000h-267FFFh SA84 1001101XXX 32 268000h-26FFFFh SA85 1001110XXX 32 270000h-277FFFh Document Number: 002-00615 Rev. *B Address Range (x16) Page 31 of 101 S29PL-J Table 11.6 PL064J Sector Architecture (Continued) Bank C Bank Sector Sector Address (A22-A12) Sector Size (Kwords) Address Range (x16) SA86 1001111XXX 32 278000h-27FFFFh SA87 1010000XXX 32 280000h-287FFFh SA88 1010001XXX 32 288000h-28FFFFh SA89 1010010XXX 32 290000h-297FFFh SA90 1010011XXX 32 298000h-29FFFFh SA91 1010100XXX 32 2A0000h-2A7FFFh SA92 1010101XXX 32 2A8000h-2AFFFFh SA93 1010110XXX 32 2B0000h-2B7FFFh SA94 1010111XXX 32 2B8000h-2BFFFFh SA95 1011000XXX 32 2C0000h-2C7FFFh SA96 1011001XXX 32 2C8000h-2CFFFFh SA97 1011010XXX 32 2D0000h-2D7FFFh SA98 1011011XXX 32 2D8000h-2DFFFFh SA99 1011100XXX 32 2E0000h-2E7FFFh SA100 1011101XXX 32 2E8000h-2EFFFFh SA101 1011110XXX 32 2F0000h-2F7FFFh SA102 1011111XXX 32 2F8000h-2FFFFFh SA103 1100000XXX 32 300000h-307FFFh SA104 1100001XXX 32 308000h-30FFFFh SA105 1100010XXX 32 310000h-317FFFh SA106 1100011XXX 32 318000h-31FFFFh SA107 1100100XXX 32 320000h-327FFFh SA108 1100101XXX 32 328000h-32FFFFh SA109 1100110XXX 32 330000h-337FFFh SA110 1100111XXX 32 338000h-33FFFFh SA111 1101000XXX 32 340000h-347FFFh SA112 1101001XXX 32 348000h-34FFFFh SA113 1101010XXX 32 350000h-357FFFh SA114 1101011XXX 32 358000h-35FFFFh SA115 1101100XXX 32 360000h-367FFFh SA116 1101101XXX 32 368000h-36FFFFh SA117 1101110XXX 32 370000h-377FFFh SA118 1101111XXX 32 378000h-37FFFFh Document Number: 002-00615 Rev. *B Page 32 of 101 S29PL-J Table 11.6 PL064J Sector Architecture (Continued) Bank D Bank D Bank Sector Sector Address (A22-A12) Sector Size (Kwords) SA119 1110000XXX 32 Address Range (x16) 380000h-387FFFh SA120 1110001XXX 32 388000h-38FFFFh SA121 1110010XXX 32 390000h-397FFFh SA122 1110011XXX 32 398000h-39FFFFh SA123 1110100XXX 32 3A0000h-3A7FFFh SA124 1110101XXX 32 3A8000h-3AFFFFh SA125 1110110XXX 32 3B0000h-3B7FFFh SA126 1110111XXX 32 3B8000h-3BFFFFh SA127 1111000XXX 32 3C0000h-3C7FFFh SA128 1111001XXX 32 3C8000h-3CFFFFh SA129 1111010XXX 32 3D0000h-3D7FFFh SA130 1111011XXX 32 3D8000h-3DFFFFh SA131 1111100XXX 32 3E0000h-3E7FFFh SA132 1111101XXX 32 3E8000h-3EFFFFh SA133 1111110XXX 32 3F0000h-3F7FFFh SA134 1111111000 4 3F8000h-3F8FFFh SA135 1111111001 4 3F9000h-3F9FFFh SA136 1111111010 4 3FA000h-3FAFFFh SA137 1111111011 4 3FB000h-3FBFFFh SA138 1111111100 4 3FC000h-3FCFFFh SA139 1111111101 4 3FD000h-3FDFFFh SA140 1111111110 4 3FE000h-3FEFFFh SA141 1111111111 4 3FF000h-3FFFFFh Table 11.7 PL032J Sector Architecture Bank A Bank Sector Sector Address (A22-A12) Sector Size (Kwords) Address Range (x16) SA0 000000000 4 000000h-000FFFh SA1 000000001 4 001000h-001FFFh SA2 000000010 4 002000h-002FFFh SA3 000000011 4 003000h-003FFFh SA4 000000100 4 004000h-004FFFh SA5 000000101 4 005000h-005FFFh SA6 000000110 4 006000h-006FFFh SA7 000000111 4 007000h-007FFFh SA8 000001XXX 32 008000h-00FFFFh SA9 000010XXX 32 010000h-017FFFh SA10 000011XXX 32 018000h-01FFFFh SA11 000100XXX 32 020000h-027FFFh SA12 000101XXX 32 028000h-02FFFFh SA13 000110XXX 32 030000h-037FFFh SA14 000111XXX 32 038000h-03FFFFh Document Number: 002-00615 Rev. *B Page 33 of 101 S29PL-J Table 11.7 PL032J Sector Architecture (Continued) Bank B Bank Bank B Sector Sector Address (A22-A12) Sector Size (Kwords) SA15 001000XXX 32 Address Range (x16) 040000h-047FFFh SA16 001001XXX 32 048000h-04FFFFh SA17 001010XXX 32 050000h-057FFFh SA18 001011XXX 32 058000h-05FFFFh SA19 001100XXX 32 060000h-067FFFh SA20 001101XXX 32 068000h-06FFFFh SA21 001110XXX 32 070000h-077FFFh SA22 001111XXX 32 078000h-07FFFFh SA23 010000XXX 32 080000h-087FFFh SA24 010001XXX 32 088000h-08FFFFh SA25 010010XXX 32 090000h-097FFFh SA26 010011XXX 32 098000h-09FFFFh SA27 010100XXX 32 0A0000h-0A7FFFh SA28 010101XXX 32 0A8000h-0AFFFFh SA29 010110XXX 32 0B0000h-0B7FFFh SA30 010111XXX 32 0B8000h-0BFFFFh SA31 011000XXX 32 0C0000h-0C7FFFh SA32 011001XXX 32 0C8000h-0CFFFFh SA33 011010XXX 32 0D0000h-0D7FFFh SA34 011011XXX 32 0D8000h-0DFFFFh SA35 011100XXX 32 0E0000h-0E7FFFh SA36 011101XXX 32 0E8000h-0EFFFFh SA37 011110XXX 32 0F0000h-0F7FFFh SA38 011111XXX 32 0F8000h-0FFFFFh Document Number: 002-00615 Rev. *B Page 34 of 101 S29PL-J Table 11.7 PL032J Sector Architecture (Continued) Bank D Bank C Bank Sector Sector Address (A22-A12) Sector Size (Kwords) SA39 100000XXX 32 Address Range (x16) 100000h-107FFFh SA40 100001XXX 32 108000h-10FFFFh SA41 100010XXX 32 110000h-117FFFh SA42 100011XXX 32 118000h-11FFFFh SA43 100100XXX 32 120000h-127FFFh SA44 100101XXX 32 128000h-12FFFFh SA45 100110XXX 32 130000h-137FFFh SA46 100111XXX 32 138000h-13FFFFh SA47 101000XXX 32 140000h-147FFFh SA48 101001XXX 32 148000h-14FFFFh SA49 101010XXX 32 150000h-157FFFh SA50 101011XXX 32 158000h-15FFFFh SA51 101100XXX 32 160000h-167FFFh SA52 101101XXX 32 168000h-16FFFFh SA53 101110XXX 32 170000h-177FFFh SA54 101111XXX 32 178000h-17FFFFh SA55 110000XXX 32 180000h-187FFFh SA56 110001XXX 32 188000h-18FFFFh SA57 110010XXX 32 190000h-197FFFh SA58 110011XXX 32 198000h-19FFFFh SA59 110100XXX 32 1A0000h-1A7FFFh SA60 110101XXX 32 1A8000h-1AFFFFh SA61 110110XXX 32 1B0000h-1B7FFFh SA62 110111XXX 32 1B8000h-1BFFFFh SA63 111000XXX 32 1C0000h-1C7FFFh SA64 111001XXX 32 1C8000h-1CFFFFh SA65 111010XXX 32 1D0000h-1D7FFFh SA66 111011XXX 32 1D8000h-1DFFFFh SA67 111100XXX 32 1E0000h-1E7FFFh SA68 111101XXX 32 1E8000h-1EFFFFh SA69 111110XXX 32 1F0000h-1F7FFFh SA70 111111000 4 1F8000h-1F8FFFh SA71 111111001 4 1F9000h-1F9FFFh SA72 111111010 4 1FA000h-1FAFFFh SA73 111111011 4 1FB000h-1FBFFFh SA74 111111100 4 1FC000h-1FCFFFh SA75 111111101 4 1FD000h-1FDFFFh SA76 111111110 4 1FE000h-1FEFFFh SA77 111111111 4 1FF000h-1FFFFFh Document Number: 002-00615 Rev. *B Page 35 of 101 S29PL-J Table 11.8 S29PL129J Sector Architecture Bank 1B Bank 1A Bank Sector CE1# CE2# Sector Address (A21-A12) Sector Size (Kwords) Address Range (x16) SA1-0 0 1 0000000000 4 000000h-000FFFh SA1-1 0 1 0000000001 4 001000h-001FFFh SA1-2 0 1 0000000010 4 002000h-002FFFh SA1-3 0 1 0000000011 4 003000h-003FFFh SA1-4 0 1 0000000100 4 004000h-004FFFh SA1-5 0 1 0000000101 4 005000h-005FFFh SA1-6 0 1 0000000110 4 006000h-006FFFh SA1-7 0 1 0000000111 4 007000h-007FFFh SA1-8 0 1 0000001XXX 32 008000h-00FFFFh SA1-9 0 1 0000010XXX 32 010000h-017FFFh SA1-10 0 1 0000011XXX 32 018000h-01FFFFh SA1-11 0 1 0000100XXX 32 020000h-027FFFh SA1-12 0 1 0000101XXX 32 028000h-02FFFFh SA1-13 0 1 0000110XXX 32 030000h-037FFFh SA1-14 0 1 0000111XXX 32 038000h-03FFFFh SA1-15 0 1 0001000XXX 32 040000h-047FFFh SA1-16 0 1 0001001XXX 32 048000h-04FFFFh SA1-17 0 1 0001010XXX 32 050000h-057FFFh SA1-18 0 1 0001011XXX 32 058000h-05FFFFh SA1-19 0 1 0001100XXX 32 060000h-067FFFh SA1-20 0 1 0001101XXX 32 068000h-06FFFFh SA1-21 0 1 0001110XXX 32 070000h-077FFFh SA1-22 0 1 0001111XXX 32 078000h-07FFFFh SA1-23 0 1 0010000XXX 32 080000h-087FFFh SA1-24 0 1 0010001XXX 32 088000h-08FFFFh SA1-25 0 1 0010010XXX 32 090000h-097FFFh SA1-26 0 1 0010011XXX 32 098000h-09FFFFh SA1-27 0 1 0010100XXX 32 0A0000h-0A7FFFh SA1-28 0 1 0010101XXX 32 0A8000h-0AFFFFh SA1-29 0 1 0010110XXX 32 0B0000h-0B7FFFh SA1-30 0 1 0010111XXX 32 0B8000h-0BFFFFh SA1-31 0 1 0011000XXX 32 0C0000h-0C7FFFh SA1-32 0 1 0011001XXX 32 0C8000h-0CFFFFh SA1-33 0 1 0011010XXX 32 0D0000h-0D7FFFh SA1-34 0 1 0011011XXX 32 0D8000h-0DFFFFh SA1-35 0 1 0011100XXX 32 0E0000h-0E7FFFh SA1-36 0 1 0011101XXX 32 0E8000h-0EFFFFh SA1-37 0 1 0011110XXX 32 0F0000h-0F7FFFh SA1-38 0 1 0011111XXX 32 0F8000h-0FFFFFh SA1-39 0 1 0100000XXX 32 100000h-107FFFh SA1-40 0 1 0100001XXX 32 108000h-10FFFFh SA1-41 0 1 0100010XXX 32 110000h-117FFFh SA1-42 0 1 0100011XXX 32 118000h-11FFFFh SA1-43 0 1 0100100XXX 32 120000h-127FFFh SA1-44 0 1 0100101XXX 32 128000h-12FFFFh SA1-45 0 1 0100110XXX 32 130000h-137FFFh SA1-46 0 1 0100111XXX 32 138000h-13FFFFh SA1-47 0 1 0101000XXX 32 140000h-147FFFh Document Number: 002-00615 Rev. *B Page 36 of 101 S29PL-J Table 11.8 S29PL129J Sector Architecture (Continued) Bank 1B Bank Sector CE1# CE2# Sector Address (A21-A12) Sector Size (Kwords) Address Range (x16) SA1-48 0 1 0101001XXX 32 148000h-14FFFFh SA1-49 0 1 0101010XXX 32 150000h-157FFFh SA1-50 0 1 0101011XXX 32 158000h-15FFFFh SA1-51 0 1 0101100XXX 32 160000h-167FFFh SA1-52 0 1 0101101XXX 32 168000h-16FFFFh SA1-53 0 1 0101110XXX 32 170000h-177FFFh SA1-54 0 1 0101111XXX 32 178000h-17FFFFh SA1-55 0 1 0110000XXX 32 180000h-187FFFh SA1-56 0 1 0110001XXX 32 188000h-18FFFFh SA1-57 0 1 0110010XXX 32 190000h-197FFFh SA1-58 0 1 0110011XXX 32 198000h-19FFFFh SA1-59 0 1 0110100XXX 32 1A0000h-1A7FFFh SA1-60 0 1 0110101XXX 32 1A8000h-1AFFFFh SA1-61 0 1 0110110XXX 32 1B0000h-1B7FFFh SA1-62 0 1 0110111XXX 32 1B8000h-1BFFFFh SA1-63 0 1 0111000XXX 32 1C0000h-1C7FFFh SA1-64 0 1 0111001XXX 32 1C8000h-1CFFFFh SA1-65 0 1 0111010XXX 32 1D0000h-1D7FFFh SA1-66 0 1 0111011XXX 32 1D8000h-1DFFFFh SA1-67 0 1 0111100XXX 32 1E0000h-1E7FFFh SA1-68 0 1 0111101XXX 32 1E8000h-1EFFFFh SA1-69 0 1 0111110XXX 32 1F0000h-1F7FFFh SA1-70 0 1 0111111XXX 32 1F8000h-1FFFFFh SA1-71 0 1 1000000XXX 32 200000h-207FFFh SA1-72 0 1 1000001XXX 32 208000h-20FFFFh SA1-73 0 1 1000010XXX 32 210000h-217FFFh SA1-74 0 1 1000011XXX 32 218000h-21FFFFh SA1-75 0 1 1000100XXX 32 220000h-227FFFh SA1-76 0 1 1000101XXX 32 228000h-22FFFFh SA1-77 0 1 1000110XXX 32 230000h-237FFFh SA1-78 0 1 1000111XXX 32 238000h-23FFFFh SA1-79 0 1 1001000XXX 32 240000h-247FFFh SA1-80 0 1 1001001XXX 32 248000h-24FFFFh SA1-81 0 1 1001010XXX 32 250000h-257FFFh SA1-82 0 1 1001011XXX 32 258000h-25FFFFh SA1-83 0 1 1001100XXX 32 260000h-267FFFh SA1-84 0 1 1001101XXX 32 268000h-26FFFFh SA1-85 0 1 1001110XXX 32 270000h-277FFFh SA1-86 0 1 1001111XXX 32 278000h-27FFFFh SA1-87 0 1 1010000XXX 32 280000h-287FFFh SA1-88 0 1 1010001XXX 32 288000h-28FFFFh SA1-89 0 1 1010010XXX 32 290000h-297FFFh SA1-90 0 1 1010011XXX 32 298000h-29FFFFh SA1-91 0 1 1010100XXX 32 2A0000h-2A7FFFh SA1-92 0 1 1010101XXX 32 2A8000h-2AFFFFh SA1-93 0 1 1010110XXX 32 2B0000h-2B7FFFh SA1-94 0 1 1010111XXX 32 2B8000h-2BFFFFh SA1-95 0 1 1011000XXX 32 2C0000h-2C7FFFh SA1-96 0 1 1011001XXX 32 2C8000h-2CFFFFh Document Number: 002-00615 Rev. *B Page 37 of 101 S29PL-J Table 11.8 S29PL129J Sector Architecture (Continued) Bank 1B Bank Sector CE1# CE2# Sector Address (A21-A12) Sector Size (Kwords) SA1-97 0 1 1011010XXX 32 Address Range (x16) 2D0000h-2D7FFFh SA1-98 0 1 1011011XXX 32 2D8000h-2DFFFFh SA1-99 0 1 1011100XXX 32 2E0000h-2E7FFFh 2E8000h-2EFFFFh SA1-100 0 1 1011101XXX 32 SA1-101 0 1 1011110XXX 32 2F0000h-2F7FFFh SA1-102 0 1 1011111XXX 32 2F8000h-2FFFFFh SA1-103 0 1 1100000XXX 32 300000h-307FFFh SA1-104 0 1 1100001XXX 32 308000h-30FFFFh SA1-105 0 1 1100010XXX 32 310000h-317FFFh SA1-106 0 1 1100011XXX 32 318000h-31FFFFh SA1-107 0 1 1100100XXX 32 320000h-327FFFh SA1-108 0 1 1100101XXX 32 328000h-32FFFFh SA1-109 0 1 1100110XXX 32 330000h-337FFFh SA1-110 0 1 1100111XXX 32 338000h-33FFFFh SA1-111 0 1 1101000XXX 32 340000h-347FFFh SA1-112 0 1 1101001XXX 32 348000h-34FFFFh SA1-113 0 1 1101010XXX 32 350000h-357FFFh SA1-114 0 1 1101011XXX 32 358000h-35FFFFh SA1-115 0 1 1101100XXX 32 360000h-367FFFh SA1-116 0 1 1101101XXX 32 368000h-36FFFFh SA1-117 0 1 1101110XXX 32 370000h-377FFFh SA1-118 0 1 1101111XXX 32 378000h-37FFFFh SA1-119 0 1 1110000XXX 32 380000h-387FFFh SA1-120 0 1 1110001XXX 32 388000h-38FFFFh SA1-121 0 1 1110010XXX 32 390000h-397FFFh SA1-122 0 1 1110011XXX 32 398000h-39FFFFh SA1-123 0 1 1110100XXX 32 3A0000h-3A7FFFh SA1-124 0 1 1110101XXX 32 3A8000h-3AFFFFh SA1-125 0 1 1110110XXX 32 3B0000h-3B7FFFh SA1-126 0 1 1110111XXX 32 3B8000h-3BFFFFh SA1-127 0 1 1111000XXX 32 3C0000h-3C7FFFh SA1-128 0 1 1111001XXX 32 3C8000h-3CFFFFh SA1-129 0 1 1111010XXX 32 3D0000h-3D7FFFh SA1-130 0 1 1111011XXX 32 3D8000h-3DFFFFh SA1-131 0 1 1111100XXX 32 3E0000h-3E7FFFh SA1-132 0 1 1111101XXX 32 3E8000h-3EFFFFh SA1-133 0 1 1111110XXX 32 3F0000h-3F7FFFh SA1-134 0 1 1111111XXX 32 3F8000h-3FFFFFh Document Number: 002-00615 Rev. *B Page 38 of 101 S29PL-J Table 11.8 S29PL129J Sector Architecture (Continued) Bank 2A Bank Sector CE1# CE2# Sector Address (A21-A12) Sector Size (Kwords) SA2-0 1 0 0000000XXX 32 Address Range (x16) 000000h-007FFFh SA2-1 1 0 0000001XXX 32 008000h-00FFFFh SA2-2 1 0 0000010XXX 32 010000h-017FFFh SA2-3 1 0 0000011XXX 32 018000h-01FFFFh SA2-4 1 0 0000100XXX 32 020000h-027FFFh SA2-5 1 0 0000101XXX 32 028000h-02FFFFh SA2-6 1 0 0000110XXX 32 030000h-037FFFh SA2-7 1 0 0000111XXX 32 038000h-03FFFFh SA2-8 1 0 0001000XXX 32 040000h-047FFFh SA2-9 1 0 0001001XXX 32 048000h-04FFFFh SA2-10 1 0 0001010XXX 32 050000h-057FFFh Document Number: 002-00615 Rev. *B Page 39 of 101 S29PL-J Table 11.8 S29PL129J Sector Architecture (Continued) Bank 2A Bank Sector CE1# CE2# Sector Address (A21-A12) Sector Size (Kwords) Address Range (x16) SA2-11 1 0 0001011XXX 32 058000h-05FFFFh SA2-12 1 0 0001100XXX 32 060000h-067FFFh SA2-13 1 0 0001101XXX 32 068000h-06FFFFh SA2-14 1 0 0001110XXX 32 070000h-077FFFh SA2-15 1 0 0001111XXX 32 078000h-07FFFFh SA2-16 1 0 0010000XXX 32 080000h-087FFFh SA2-17 1 0 0010001XXX 32 088000h-08FFFFh SA2-18 1 0 0010010XXX 32 090000h-097FFFh SA2-19 1 0 0010011XXX 32 098000h-09FFFFh SA2-20 1 0 0010100XXX 32 0A0000h-0A7FFFh SA2-21 1 0 0010101XXX 32 0A8000h-0AFFFFh SA2-22 1 0 0010110XXX 32 0B0000h-0B7FFFh SA2-23 1 0 0010111XXX 32 0B8000h-0BFFFFh SA2-24 1 0 0011000XXX 32 0C0000h-0C7FFFh SA2-25 1 0 0011001XXX 32 0C8000h-0CFFFFh SA2-26 1 0 0011010XXX 32 0D0000h-0D7FFFh SA2-27 1 0 0011011XXX 32 0D8000h-0DFFFFh SA2-28 1 0 0011100XXX 32 0E0000h-0E7FFFh SA2-29 1 0 0011101XXX 32 0E8000h-0EFFFFh SA2-30 1 0 0011110XXX 32 0F0000h-0F7FFFh SA2-31 1 0 0011111XXX 32 0F8000h-0FFFFFh SA2-32 1 0 0100000XXX 32 100000h-107FFFh SA2-33 1 0 0100001XXX 32 108000h-10FFFFh SA2-34 1 0 0100010XXX 32 110000h-117FFFh SA2-35 1 0 0100011XXX 32 118000h-11FFFFh SA2-36 1 0 0100100XXX 32 120000h-127FFFh SA2-37 1 0 0100101XXX 32 128000h-12FFFFh SA2-38 1 0 0100110XXX 32 130000h-137FFFh SA2-39 1 0 0100111XXX 32 138000h-13FFFFh SA2-40 1 0 0101000XXX 32 140000h-147FFFh SA2-41 1 0 0101001XXX 32 148000h-14FFFFh SA2-42 1 0 0101010XXX 32 150000h-157FFFh SA2-43 1 0 0101011XXX 32 158000h-15FFFFh SA2-44 1 0 0101100XXX 32 160000h-167FFFh SA2-45 1 0 0101101XXX 32 168000h-16FFFFh SA2-46 1 0 0101110XXX 32 170000h-177FFFh SA2-47 1 0 0101111XXX 32 178000h-17FFFFh SA2-48 1 0 0110000XXX 32 180000h-187FFFh SA2-49 1 0 0110001XXX 32 188000h-18FFFFh SA2-50 1 0 0110010XXX 32 190000h-197FFFh SA2-51 1 0 0110011XXX 32 198000h-19FFFFh SA2-52 1 0 0110100XXX 32 1A0000h-1A7FFFh SA2-53 1 0 0110101XXX 32 1A8000h-1AFFFFh SA2-54 1 0 0110110XXX 32 1B0000h-1B7FFFh SA2-55 1 0 0110111XXX 32 1B8000h-1BFFFFh SA2-56 1 0 0111000XXX 32 1C0000h-1C7FFFh SA2-57 1 0 0111001XXX 32 1C8000h-1CFFFFh SA2-58 1 0 0111010XXX 32 1D0000h-1D7FFFh SA2-59 1 0 0111011XXX 32 1D8000h-1DFFFFh Document Number: 002-00615 Rev. *B Page 40 of 101 S29PL-J Table 11.8 S29PL129J Sector Architecture (Continued) Bank 2A Bank Sector CE1# CE2# Sector Address (A21-A12) Sector Size (Kwords) SA2-60 1 0 0111100XXX 32 Address Range (x16) 1E0000h-1E7FFFh SA2-61 1 0 0111101XXX 32 1E8000h-1EFFFFh SA2-62 1 0 0111110XXX 32 1F0000h-1F7FFFh 1F8000h-1FFFFFh SA2-63 1 0 0111111XXX 32 SA2-64 1 0 1000000XXX 32 200000h-207FFFh SA2-65 1 0 1000001XXX 32 208000h-20FFFFh SA2-66 1 0 1000010XXX 32 210000h-217FFFh SA2-67 1 0 1000011XXX 32 218000h-21FFFFh SA2-68 1 0 1000100XXX 32 220000h-227FFFh SA2-69 1 0 1000101XXX 32 228000h-22FFFFh SA2-70 1 0 1000110XXX 32 230000h-237FFFh SA2-71 1 0 1000111XXX 32 238000h-23FFFFh SA2-72 1 0 1001000XXX 32 240000h-247FFFh SA2-73 1 0 1001001XXX 32 248000h-24FFFFh SA2-74 1 0 1001010XXX 32 250000h-257FFFh SA2-75 1 0 1001011XXX 32 258000h-25FFFFh SA2-76 1 0 1001100XXX 32 260000h-267FFFh SA2-77 1 0 1001101XXX 32 268000h-26FFFFh SA2-78 1 0 1001110XXX 32 270000h-277FFFh SA2-79 1 0 1001111XXX 32 278000h-27FFFFh SA2-80 1 0 1010000XXX 32 280000h-287FFFh SA2-81 1 0 1010001XXX 32 288000h-28FFFFh SA2-82 1 0 1010010XXX 32 290000h-297FFFh SA2-83 1 0 1010011XXX 32 298000h-29FFFFh SA2-84 1 0 1010100XXX 32 2A0000h-2A7FFFh SA2-85 1 0 1010101XXX 32 2A8000h-2AFFFFh SA2-86 1 0 1010110XXX 32 2B0000h-2B7FFFh SA2-87 1 0 1010111XXX 32 2B8000h-2BFFFFh SA2-88 1 0 1011000XXX 32 2C0000h-2C7FFFh SA2-89 1 0 1011001XXX 32 2C8000h-2CFFFFh SA2-90 1 0 1011010XXX 32 2D0000h-2D7FFFh SA2-91 1 0 1011011XXX 32 2D8000h-2DFFFFh SA2-92 1 0 1011100XXX 32 2E0000h-2E7FFFh SA2-93 1 0 1011101XXX 32 2E8000h-2EFFFFh SA2-94 1 0 1011110XXX 32 2F0000h-2F7FFFh SA2-95 1 0 1011111XXX 32 2F8000h-2FFFFFh Document Number: 002-00615 Rev. *B Page 41 of 101 S29PL-J Table 11.8 S29PL129J Sector Architecture (Continued) Bank 2B Bank 2B Bank Sector CE1# CE2# Sector Address (A21-A12) Sector Size (Kwords) SA2-96 1 0 1100000XXX 32 Address Range (x16) 300000h-307FFFh SA2-97 1 0 1100001XXX 32 308000h-30FFFFh SA2-98 1 0 1100010XXX 32 310000h-317FFFh 318000h-31FFFFh SA2-99 1 0 1100011XXX 32 SA2-100 1 0 1100100XXX 32 320000h-327FFFh SA2-101 1 0 1100101XXX 32 328000h-32FFFFh SA2-102 1 0 1100110XXX 32 330000h-337FFFh SA2-103 1 0 1100111XXX 32 338000h-33FFFFh SA2-104 1 0 1101000XXX 32 340000h-347FFFh SA2-105 1 0 1101001XXX 32 348000h-34FFFFh SA2-106 1 0 1101010XXX 32 350000h-357FFFh SA2-107 1 0 1101011XXX 32 358000h-35FFFFh SA2-108 1 0 1101100XXX 32 360000h-367FFFh SA2-109 1 0 1101101XXX 32 368000h-36FFFFh SA2-110 1 0 1101110XXX 32 370000h-377FFFh SA2-111 1 0 1101111XXX 32 378000h-37FFFFh SA2-112 1 0 1110000XXX 32 380000h-387FFFh SA2-113 1 0 1110001XXX 32 388000h-38FFFFh SA2-114 1 0 1110010XXX 32 390000h-397FFFh SA2-115 1 0 1110011XXX 32 398000h-39FFFFh SA2-116 1 0 1110100XXX 32 3A0000h-3A7FFFh SA2-117 1 0 1110101XXX 32 3A8000h-3AFFFFh SA2-118 1 0 1110110XXX 32 3B0000h-3B7FFFh SA2-119 1 0 1110111XXX 32 3B8000h-3BFFFFh SA2-120 1 0 1111000XXX 32 3C0000h-3C7FFFh SA2-121 1 0 1111001XXX 32 3C8000h-3CFFFFh SA2-122 1 0 1111010XXX 32 3D0000h-3D7FFFh SA2-123 1 0 1111011XXX 32 3D8000h-3DFFFFh SA2-124 1 0 1111100XXX 32 3E0000h-3E7FFFh SA2-125 1 0 1111101XXX 32 3E8000h-3EFFFFh SA2-126 1 0 1111110XXX 32 3F0000h-3F7FFFh SA2-127 1 0 1111111000 4 3F8000h-3F8FFFh SA2-128 1 0 1111111001 4 3F9000h-3F9FFFh SA2-129 1 0 1111111010 4 3FA000h-3FAFFFh SA2-130 1 0 1111111011 4 3FB000h-3FBFFFh SA2-131 1 0 1111111100 4 3FC000h-3FCFFFh SA2-132 1 0 1111111101 4 3FD000h-3FDFFFh SA2-133 1 0 1111111110 4 3FE000h-3FEFFFh SA2-134 1 0 1111111111 4 3FF000h-3FFFFFh Table 11.9 Secured Silicon Sector Addresses Sector Size Address Range Factory-Locked Area 64 words 000000h-00003Fh Customer-Lockable Area 64 words 000040h-00007Fh Document Number: 002-00615 Rev. *B Page 42 of 101 S29PL-J 11.8 Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7-DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins must be as shown in Table 11.10 on page 43 and Table 11.11 on page 44. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table 11.4 on page 19). Table 11.10 and Table 11.11 show the remaining address bits that are don't care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7-DQ0. However, the autoselect codes can also be accessed in-system through the command register, for instances when the device is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in Table 16.1 on page 68. Note that if a Bank Address (BA) (on address bits PL127J: A22-A20, PL129J and PL064J: A21-A19, PL032J: A20-A18) is asserted during the third write cycle of the autoselect command, the host system can read autoselect data that bank and then immediately read array data from the other bank, without exiting the autoselect mode. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 16.1 on page 68. This method does not require VID. Refer to the Autoselect Command Sequence on page 62 for more information. Table 11.10 Autoselect Codes (High Voltage Method) Description Device ID Manufacturer ID: Cypress products CE# OE# WE# L L H Amax to A12 BA A10 A9 A8 A7 A6 A5 to A4 A3 A2 A1 A0 X VID X L L X DQ15 to DQ0 L L L L 0001h Read Cycle 1 L L L L H 227Eh Read Cycle 2 L H H H L 2220h (PL127J) 2202h (PL064J) 220Ah (PL032J) H H H H 2200h (PL127J) 2201h (PL064J) 2201h (PL032J) L L H L 0001h (protected), 0000h (unprotected) H DQ7=1 (factory locked), DQ6=1 (factory and customer locked) L Read Cycle 3 Sector Protection Verification Secured Silicon Indicator Bit (DQ7, DQ6) H BA X VID X L L L L L L L L H H SA BA (See Note) X X VID VID X X L X L L L X L L H Legend L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don't care. Note When Polling the Secured Silicon indicator bit the Bank Address (BA) should be set within the address range 004000h-03FFFFh. Document Number: 002-00615 Rev. *B Page 43 of 101 S29PL-J Table 11.11 Autoselect Codes for PL129J Description Manufacturer ID: Cypress products Device ID Read Cycle 1 CE1# CE2# OE# L H H L L H H L Read Cycle 2 L H H L Read Cycle 3 L H H L L H H L L H H L Sector Protection Verification Secured Silicon Indicator Bit (DQ7, DQ6) L L L L WE# A21 to A12 H X H H H X SA X (Note 1) A10 A9 A8 A7 A6 X X X X VID VID VID VID X X X X L L L X L L L L A5 to A4 X L L X A3 A2 A1 A0 DQ15 to DQ0 L L L L 0001h L L L H 227Eh H H H L 2221h H H H H 2200h L 0001h (protected), 0000h (unprotected) H DQ7=1 (factory locked), DQ6=1 (factory and customer locked) L L L L H H Legend L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don't care. Note 1. When Polling the Secured Silicon indicator bit the A21 to A12 should be set within the address range 004000h-03FFFFh. 2. The autoselect codes may also be accessed in-system by using the command sequences Document Number: 002-00615 Rev. *B Page 44 of 101 S29PL-J Table 11.12 PL127J Boot Sector/Sector Block Addresses for Protection/Unprotection Sector A22-A12 Sector/Sector Block Size Sector A22-A12 Sector/Sector Block Size SA0 00000000000 4 Kwords SA131-SA134 011111XXXXX 128 (4x32) Kwords SA1 00000000001 4 Kwords SA135-SA138 100000XXXXX 128 (4x32) Kwords SA2 00000000010 4 Kwords SA139-SA142 100001XXXXX 128 (4x32) Kwords SA3 00000000011 4 Kwords SA143-SA146 100010XXXXX 128 (4x32) Kwords SA4 00000000100 4 Kwords SA147-SA150 100011XXXXX 128 (4x32) Kwords SA5 00000000101 4 Kwords SA151-SA154 100100XXXXX 128 (4x32) Kwords SA6 00000000110 4 Kwords SA155-SA158 100101XXXXX 128 (4x32) Kwords SA7 00000000111 4 Kwords SA159-SA162 100110XXXXX 128 (4x32) Kwords SA8 00000001XXX 32 Kwords SA163-SA166 100111XXXXX 128 (4x32) Kwords SA9 00000010XXX 32 Kwords SA167-SA170 101000XXXXX 128 (4x32) Kwords SA10 00000011XXX 32 Kwords SA171-SA174 101001XXXXX 128 (4x32) Kwords SA11-SA14 000001XXXXX 128 (4x32) Kwords SA175-SA178 101010XXXXX 128 (4x32) Kwords SA15-SA18 000010XXXXX 128 (4x32) Kwords SA179-SA182 101011XXXXX 128 (4x32) Kwords SA19-SA22 000011XXXXX 128 (4x32) Kwords SA183-SA186 101100XXXXX 128 (4x32) Kwords SA23-SA26 000100XXXXX 128 (4x32) Kwords SA187-SA190 101101XXXXX 128 (4x32) Kwords SA27-SA30 000101XXXXX 128 (4x32) Kwords SA191-SA194 101110XXXXX 128 (4x32) Kwords SA31-SA34 000110XXXXX 128 (4x32) Kwords SA195-SA198 101111XXXXX 128 (4x32) Kwords SA35-SA38 000111XXXXX 128 (4x32) Kwords SA199-SA202 110000XXXXX 128 (4x32) Kwords SA39-SA42 001000XXXXX 128 (4x32) Kwords SA203-SA206 110001XXXXX 128 (4x32) Kwords SA43-SA46 001001XXXXX 128 (4x32) Kwords SA207-SA210 110010XXXXX 128 (4x32) Kwords SA47-SA50 001010XXXXX 128 (4x32) Kwords SA211-SA214 110011XXXXX 128 (4x32) Kwords SA51-SA54 001011XXXXX 128 (4x32) Kwords SA215-SA218 110100XXXXX 128 (4x32) Kwords SA55-SA58 001100XXXXX 128 (4x32) Kwords SA219-SA222 110101XXXXX 128 (4x32) Kwords SA59-SA62 001101XXXXX 128 (4x32) Kwords SA223-SA226 110110XXXXX 128 (4x32) Kwords SA63-SA66 001110XXXXX 128 (4x32) Kwords SA227-SA230 110111XXXXX 128 (4x32) Kwords SA67-SA70 001111XXXXX 128 (4x32) Kwords SA231-SA234 111000XXXXX 128 (4x32) Kwords SA71-SA74 010000XXXXX 128 (4x32) Kwords SA235-SA238 111001XXXXX 128 (4x32) Kwords SA75-SA78 010001XXXXX 128 (4x32) Kwords SA239-SA242 111010XXXXX 128 (4x32) Kwords SA79-SA82 010010XXXXX 128 (4x32) Kwords SA243-SA246 111011XXXXX 128 (4x32) Kwords SA83-SA86 010011XXXXX 128 (4x32) Kwords SA247-SA250 111100XXXXX 128 (4x32) Kwords SA87-SA90 010100XXXXX 128 (4x32) Kwords SA251-SA254 111101XXXXX 128 (4x32) Kwords SA91-SA94 010101XXXXX 128 (4x32) Kwords SA255-SA258 111110XXXXX 128 (4x32) Kwords SA95-SA98 010110XXXXX 128 (4x32) Kwords SA259 11111100XXX 32 Kwords SA99-SA102 010111XXXXX 128 (4x32) Kwords SA260 11111101XXX 32 Kwords SA103-SA106 011000XXXXX 128 (4x32) Kwords SA261 11111110XXX 32 Kwords SA107-SA110 011001XXXXX 128 (4x32) Kwords SA262 11111111000 4 Kwords SA111-SA114 011010XXXXX 128 (4x32) Kwords SA263 11111111001 4 Kwords SA115-SA118 011011XXXXX 128 (4x32) Kwords SA264 11111111010 4 Kwords SA119-SA122 011100XXXXX 128 (4x32) Kwords SA265 11111111011 4 Kwords SA123-SA126 011101XXXXX 128 (4x32) Kwords SA127-SA130 011110XXXXX 128 (4x32) Kwords Document Number: 002-00615 Rev. *B Page 45 of 101 S29PL-J Table 11.13 PL129J Boot Sector/Sector Block Addresses for Protection/Unprotection CE1# Control CE2# Control Sector Group A21-12 Sector/Sector Block Size Sector Group A21-12 Sector/Sector Block Size SA1-0 0000000000 4 Kwords SA2-0-SA2-3 00000XXXXX 128 (4x32) Kwords SA1-1 0000000001 4 Kwords SA2-4-SA2-7 00001XXXXX 128 (4x32) Kwords SA1-2 0000000010 4 Kwords SA2-8-SA2-11 00010XXXXX 128 (4x32) Kwords SA1-3 0000000011 4 Kwords SA2-12-SA2-15 00011XXXXX 128 (4x32) Kwords SA1-4 0000000100 4 Kwords SA2-16-SA2-19 00100XXXXX 128 (4x32) Kwords SA1-5 0000000101 4 Kwords SA2-20-SA2-23 00101XXXXX 128 (4x32) Kwords SA1-6 0000000110 4 Kwords SA2-24-SA2-27 00110XXXXX 128 (4x32) Kwords SA1-7 0000000111 4 Kwords SA2-28-SA2-31 00111XXXXX 128 (4x32) Kwords SA1-8 0000001XXX 32 Kwords SA2-32-SA2-35 01000XXXXX 128 (4x32) Kwords 128 (4x32) Kwords SA1-9 0000010XXX 32 Kwords SA2-36-SA2-39 01001XXXXX SA1-10 0000011XXX 32 Kwords SA2-40-SA2-43 01010XXXXX 128 (4x32) Kwords SA1-11 - SA1-14 00001XXXXX 128 (4x32) Kwords SA2-44-SA2-47 01011XXXXX 128 (4x32) Kwords SA1-15 - SA1-18 00010XXXXX 128 (4x32) Kwords SA2-48-SA2-51 01100XXXXX 128 (4x32) Kwords SA1-19 - SA1-22 00011XXXXX 128 (4x32) Kwords SA2-52-SA2-55 01101XXXXX 128 (4x32) Kwords SA1-23 - SA1-26 00100XXXXX 128 (4x32) Kwords SA2-56-SA2-59 01110XXXXX 128 (4x32) Kwords SA1-27 - SA1-30 00101XXXXX 128 (4x32) Kwords SA2-60-SA2-63 01111XXXXX 128 (4x32) Kwords SA1-31 - SA1-34 00110XXXXX 128 (4x32) Kwords SA2-64-SA2-67 10000XXXXX 128 (4x32) Kwords SA1-35 - SA1-38 00111XXXXX 128 (4x32) Kwords SA2-68-SA2-71 10001XXXXX 128 (4x32) Kwords SA1-39 - SA1-42 01000XXXXX 128 (4x32) Kwords SA2-72-SA2-75 10010XXXXX 128 (4x32) Kwords SA1-43 - SA1-46 01001XXXXX 128 (4x32) Kwords SA2-76-SA2-79 10011XXXXX 128 (4x32) Kwords SA1-47 - SA1-50 01010XXXXX 128 (4x32) Kwords SA2-80-SA2-83 10100XXXXX 128 (4x32) Kwords SA1-51 - SA1-54 01011XXXXX 128 (4x32) Kwords SA2-84-SA2-87 10101XXXXX 128 (4x32) Kwords SA1-55 - SA1-58 01100XXXXX 128 (4x32) Kwords SA2-88-SA2-91 10110XXXXX 128 (4x32) Kwords SA1-59 - SA1-62 01101XXXXX 128 (4x32) Kwords SA2-92-SA2-95 10111XXXXX 128 (4x32) Kwords SA1-63 - SA1-66 01110XXXXX 128 (4x32) Kwords SA2-96-SA2-99 11000XXXXX 128 (4x32) Kwords SA1-67 - SA1-70 01111XXXXX 128 (4x32) Kwords SA2-100-SA2-103 11001XXXXX 128 (4x32) Kwords SA1-71 - SA1-74 10000XXXXX 128 (4x32) Kwords SA2-104-SA2-107 11010XXXXX 128 (4x32) Kwords SA1-75 - SA1-78 10001XXXXX 128 (4x32) Kwords SA2-108-SA2-111 11011XXXXX 128 (4x32) Kwords SA1-79 - SA1-82 10010XXXXX 128 (4x32) Kwords SA2-112-SA2-115 11100XXXXX 128 (4x32) Kwords SA1-83 - SA1-86 10011XXXXX 128 (4x32) Kwords SA2-116-SA2-119 11101XXXXX 128 (4x32) Kwords SA1-87 - SA1-90 10100XXXXX 128 (4x32) Kwords SA2-120-SA2-123 11110XXXXX 128 (4x32) Kwords SA1-91 - SA1-94 10101XXXXX 128 (4x32) Kwords SA2-124 1111100XXX 32 Kwords SA1-95 - SA1-98 10110XXXXX 128 (4x32) Kwords SA2-125 1111101XXX 32 Kwords SA1-99 - SA1-102 10111XXXXX 128 (4x32) Kwords SA2-126 1111110XXX 32 Kwords SA1-103 - SA1-106 11000XXXXX 128 (4x32) Kwords SA2-127 1111111000 4 Kwords SA1-107 - SA1-110 11001XXXXX 128 (4x32) Kwords SA2-128 1111111001 4 Kwords SA1-111 - SA1-114 11010XXXXX 128 (4x32) Kwords SA2-129 1111111010 4 Kwords SA1-115 - SA1-118 11011XXXXX 128 (4x32) Kwords SA2-130 1111111011 4 Kwords 4 Kwords SA1-119 - SA1-122 11100XXXXX 128 (4x32) Kwords SA2-131 1111111100 SA1-123 - SA1-126 11101XXXXX 128 (4x32) Kwords SA2-132 1111111101 4 Kwords SA1-127 - SA1-130 11110XXXXX 128 (4x32) Kwords SA2-133 1111111110 4 Kwords SA1-131 - SA1-134 11111XXXXX 128 (4x32) Kwords SA2-134 1111111111 4 Kwords The device is shipped with all sectors unprotected. Optional Cypress programming services enable programming and protecting sectors at the factory prior to shipping the device. Contact your local sales office for details. It is possible to determine whether a sector is protected or unprotected. See the Table 11.9, Secured Silicon Sector Addresses on page 42 for details. Document Number: 002-00615 Rev. *B Page 46 of 101 S29PL-J 11.9 Selecting a Sector Protection Mode Table 11.14 PL064J Boot Sector/Sector Block Addresses for Protection/Unprotection Sector A21-A12 Sector/Sector Block Size SA0 0000000000 4 Kwords SA1 0000000001 4 Kwords SA2 0000000010 4 Kwords SA3 0000000011 4 Kwords SA4 0000000100 4 Kwords SA5 0000000101 4 Kwords SA6 0000000110 4 Kwords SA7 0000000111 4 Kwords SA8 0000001XXX 32 Kwords SA9 0000010XXX 32 Kwords SA10 0000011XXX 32 Kwords SA11-SA14 00001XXXXX 128 (4x32) Kwords SA15-SA18 00010XXXXX 128 (4x32) Kwords SA19-SA22 00011XXXXX 128 (4x32) Kwords SA23-SA26 00100XXXXX 128 (4x32) Kwords SA27-SA30 00101XXXXX 128 (4x32) Kwords SA31-SA34 00110XXXXX 128 (4x32) Kwords SA35-SA38 00111XXXXX 128 (4x32) Kwords SA39-SA42 01000XXXXX 128 (4x32) Kwords SA43-SA46 01001XXXXX 128 (4x32) Kwords SA47-SA50 01010XXXXX 128 (4x32) Kwords SA51-SA54 01011XXXXX 128 (4x32) Kwords SA55-SA58 01100XXXXX 128 (4x32) Kwords SA59-SA62 01101XXXXX 128 (4x32) Kwords SA63-SA66 01110XXXXX 128 (4x32) Kwords SA67-SA70 01111XXXXX 128 (4x32) Kwords SA71-SA74 10000XXXXX 128 (4x32) Kwords SA75-SA78 10001XXXXX 128 (4x32) Kwords SA79-SA82 10010XXXXX 128 (4x32) Kwords SA83-SA86 10011XXXXX 128 (4x32) Kwords SA87-SA90 10100XXXXX 128 (4x32) Kwords SA91-SA94 10101XXXXX 128 (4x32) Kwords SA95-SA98 10110XXXXX 128 (4x32) Kwords SA99-SA102 10111XXXXX 128 (4x32) Kwords SA103-SA106 11000XXXXX 128 (4x32) Kwords SA107-SA110 11001XXXXX 128 (4x32) Kwords SA111-SA114 11010XXXXX 128 (4x32) Kwords SA115-SA118 11011XXXXX 128 (4x32) Kwords SA119-SA122 11100XXXXX 128 (4x32) Kwords SA123-SA126 11101XXXXX 128 (4x32) Kwords SA127-SA130 11110XXXXX 128 (4x32) Kwords Document Number: 002-00615 Rev. *B Page 47 of 101 S29PL-J Table 11.14 PL064J Boot Sector/Sector Block Addresses for Protection/Unprotection (Continued) Sector A21-A12 Sector/Sector Block Size SA131 1111100XXX 32 Kwords SA132 1111101XXX 32 Kwords SA133 1111110XXX 32 Kwords SA134 1111111000 4 Kwords SA135 1111111001 4 Kwords SA136 1111111010 4 Kwords SA137 1111111011 4 Kwords SA138 1111111100 4 Kwords Table 11.15 Sector Protection Schemes DYB PPB PPB Lock 0 0 0 Unprotected--PPB and DYB are changeable 0 0 1 Unprotected--PPB not changeable, DYB is changeable 0 1 0 1 0 0 1 1 0 0 1 1 1 0 1 1 1 1 Document Number: 002-00615 Rev. *B Sector State Protected--PPB and DYB are changeable Protected--PPB not changeable, DYB is changeable Page 48 of 101 S29PL-J 12. Sector Protection The PL127J, PL129J, PL064J, and PL032J features several levels of sector protection, which can disable both the program and erase operations in certain sectors or sector groups: 12.1 Persistent Sector Protection A command sector protection method that replaces the old 12 V controlled protection method. 12.2 Password Sector Protection A highly sophisticated protection method that requires a password before changes to certain sectors or sector groups are permitted 12.3 WP# Hardware Protection A write protect pin that can prevent program or erase operations in sectors SA1-133, SA1-134, SA2-0 and SA2-1. The WP# Hardware Protection feature is always available, independent of the software managed protection method chosen. 12.4 Selecting a Sector Protection Mode All parts default to operate in the Persistent Sector Protection mode. The customer must then choose if the Persistent or Password Protection method is most desirable. There are two one-time programmable non-volatile bits that define which sector protection method will be used. If the Persistent Sector Protection method is desired, programming the Persistent Sector Protection Mode Locking Bit permanently sets the device to the Persistent Sector Protection mode. If the Password Sector Protection method is desired, programming the Password Mode Locking Bit permanently sets the device to the Password Sector Protection mode. It is not possible to switch between the two protection modes once a locking bit has been set. One of the two modes must be selected when the device is first programmed. This prevents a program or virus from later setting the Password Mode Locking Bit, which would cause an unexpected shift from the default Persistent Sector Protection Mode into the Password Protection Mode. The device is shipped with all sectors unprotected. Optional Cypress programming services enable programming and protecting sectors at the factory prior to shipping the device. Contact your local sales office for details. It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode on page 43 for details. Document Number: 002-00615 Rev. *B Page 49 of 101 S29PL-J 13. Persistent Sector Protection The Persistent Sector Protection method replaces the 12 V controlled protection method in previous flash devices. This new method provides three different sector protection states: Persistently Locked--The sector is protected and cannot be changed. Dynamically Locked--The sector is protected and can be changed by a simple command. Unlocked--The sector is unprotected and can be changed by a simple command. To achieve these states, three types of "bits" are used: Persistent Protection Bit Persistent Protection Bit Lock Persistent Sector Protection Mode Locking Bit 13.1 Persistent Protection Bit (PPB) A single Persistent (non-volatile) Protection Bit is assigned to a maximum four sectors (see the sector address tables for specific sector protection groupings). All 4 Kword boot-block sectors have individual sector Persistent Protection Bits (PPBs) for greater flexibility. Each PPB is individually modifiable through the PPB Write Command. The device erases all PPBs in parallel. If any PPB requires erasure, the device must be instructed to preprogram all of the sector PPBs prior to PPB erasure. Otherwise, a previously erased sector PPBs can potentially be over-erased. The flash device does not have a built-in means of preventing sector PPBs over-erasure. 13.2 Persistent Protection Bit Lock (PPB Lock) The Persistent Protection Bit Lock (PPB Lock) is a global volatile bit. When set to "1", the PPBs cannot be changed. When cleared ("0"), the PPBs are changeable. There is only one PPB Lock bit per device. The PPB Lock is cleared after power-up or hardware reset. There is no command sequence to unlock the PPB Lock. 13.3 Dynamic Protection Bit (DYB) A volatile protection bit is assigned for each sector. After power-up or hardware reset, the contents of all DYBs is "0". Each DYB is individually modifiable through the DYB Write Command. When the parts are first shipped, the PPBs are cleared, the DYBs are cleared, and PPB Lock is defaulted to power up in the cleared state - meaning the PPBs are changeable. When the device is first powered on the DYBs power up cleared (sectors not protected). The Protection State for each sector is determined by the logical OR of the PPB and the DYB related to that sector. For the sectors that have the PPBs cleared, the DYBs control whether or not the sector is protected or unprotected. By issuing the DYB Write command sequences, the DYBs will be set or cleared, thus placing each sector in the protected or unprotected state. These are the so-called Dynamic Locked or Unlocked states. They are called dynamic states because it is very easy to switch back and forth between the protected and unprotected conditions. This allows software to easily protect sectors against inadvertent changes yet does not prevent the easy removal of protection when changes are needed. The DYBs maybe set or cleared as often as needed. The PPBs allow for a more static, and difficult to change, level of protection. The PPBs retain their state across power cycles because they are non-volatile. Individual PPBs are set with a command but must all be cleared as a group through a complex sequence of program and erasing commands. The PPBs are also limited to 100 erase cycles. The PPB Lock bit adds an additional level of protection. Once all PPBs are programmed to the desired settings, the PPB Lock may be set to "1". Setting the PPB Lock disables all program and erase commands to the non-volatile PPBs. In effect, the PPB Lock Bit locks the PPBs into their current state. The only way to clear the PPB Lock is to go through a power cycle. System boot code can determine if any changes to the PPB are needed; for example, to allow new system code to be downloaded. If no changes are needed then the boot code can set the PPB Lock to disable any further changes to the PPBs during system operation. Document Number: 002-00615 Rev. *B Page 50 of 101 S29PL-J The WP#/ACC write protect pin adds a final level of hardware protection to sectors SA1-133, SA1-134, SA2-0 and SA2-1. When this pin is low it is not possible to change the contents of these sectors. These sectors generally hold system boot code. The WP#/ACC pin can prevent any changes to the boot code that could override the choices made while setting up sector protection during system initialization. For customers who are concerned about malicious viruses there is another level of security - the persistently locked state. To persistently protect a given sector or sector group, the PPBs associated with that sector need to be set to "1". Once all PPBs are programmed to the desired settings, the PPB Lock should be set to "1". Setting the PPB Lock automatically disables all program and erase commands to the Non-Volatile PPBs. In effect, the PPB Lock "freezes" the PPBs into their current state. The only way to clear the PPB Lock is to go through a power cycle. It is possible to have sectors that have been persistently locked, and sectors that are left in the dynamic state. The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a simple DYB Write command sequence is all that is necessary. The DYB write command for the dynamic sectors switch the DYBs to signify protected and unprotected, respectively. If there is a need to change the status of the persistently locked sectors, a few more steps are required. First, the PPB Lock bit must be disabled by either putting the device through a power-cycle, or hardware reset. The PPBs can then be changed to reflect the desired settings. Setting the PPB lock bit once again will lock the PPBs, and the device operates normally again. The best protection is achieved by executing the PPB lock bit set command early in the boot code, and protect the boot code by holding WP#/ACC = VIL. Table 11.15 on page 48 contains all possible combinations of the DYB, PPB, and PPB lock relating to the status of the sector. In summary, if the PPB is set, and the PPB lock is set, the sector is protected and the protection can not be removed until the next power cycle clears the PPB lock. If the PPB is cleared, the sector can be dynamically locked or unlocked. The DYB then controls whether or not the sector is protected or unprotected. If the user attempts to program or erase a protected sector, the device ignores the command and returns to read mode. A program command to a protected sector enables status polling for approximately 1 s before the device returns to read mode without having modified the contents of the protected sector. An erase command to a protected sector enables status polling for approximately 50 s after which the device returns to read mode without having erased the protected sector. The programming of the DYB, PPB, and PPB lock for a given sector can be verified by writing a DYB/PPB/PPB lock verify command to the device. There is an alternative means of reading the protection status. Take RESET# to VIL and hold WE# at VIH. (The high voltage A9 Autoselect Mode also works for reading the status of the PPBs). Scanning the addresses (A18-A11) while (A6, A1, A0) = (0, 1, 0) will produce a logical `1" code at device output DQ0 for a protected sector or a "0" for an unprotected sector. In this mode, the other addresses are don't cares. Address location with A1 = VIL are reserved for autoselect manufacturer and device codes. 13.4 Persistent Sector Protection Mode Locking Bit Like the password mode locking bit, a Persistent Sector Protection mode locking bit exists to guarantee that the device remain in software sector protection. Once set, the Persistent Sector Protection locking bit prevents programming of the password protection mode locking bit. This guarantees that a hacker could not place the device in password protection mode. Document Number: 002-00615 Rev. *B Page 51 of 101 S29PL-J 14. Password Protection Mode The Password Sector Protection Mode method allows an even higher level of security than the Persistent Sector Protection Mode. There are two main differences between the Persistent Sector Protection and the Password Sector Protection Mode: When the device is first powered on, or comes out of a reset cycle, the PPB Lock bit set to the locked state, rather than cleared to the unlocked state. The only means to clear the PPB Lock bit is by writing a unique 64-bit Password to the device. The Password Sector Protection method is otherwise identical to the Persistent Sector Protection method. A 64-bit password is the only additional tool utilized in this method. Once the Password Mode Locking Bit is set, the password is permanently set with no means to read, program, or erase it. The password is used to clear the PPB Lock bit. The Password Unlock command must be written to the flash, along with a password. The flash device internally compares the given password with the pre-programmed password. If they match, the PPB Lock bit is cleared, and the PPBs can be altered. If they do not match, the flash device does nothing. There is a built-in 2 s delay for each "password check." This delay is intended to thwart any efforts to run a program that tries all possible combinations in order to crack the password. 14.1 Password and Password Mode Locking Bit In order to select the Password sector protection scheme, the customer must first program the password. The password may be correlated to the unique Electronic Serial Number (ESN) of the particular flash device. Each ESN is different for every flash device; therefore each password should be different for every flash device. While programming in the password region, the customer may perform Password Verify operations. Once the desired password is programmed in, the customer must then set the Password Mode Locking Bit. This operation achieves two objectives: Permanently sets the device to operate using the Password Protection Mode. It is not possible to reverse this function. Disables all further commands to the password region. All program, and read operations are ignored. Both of these objectives are important, and if not carefully considered, may lead to unrecoverable errors. The user must be sure that the Password Protection method is desired when setting the Password Mode Locking Bit. More importantly, the user must be sure that the password is correct when the Password Mode Locking Bit is set. Due to the fact that read operations are disabled, there is no means to verify what the password is afterwards. If the password is lost after setting the Password Mode Locking Bit, there will be no way to clear the PPB Lock bit. The Password Mode Locking Bit, once set, prevents reading the 64-bit password on the DQ bus and further password programming. The Password Mode Locking Bit is not erasable. Once Password Mode Locking Bit is programmed, the Persistent Sector Protection Locking Bit is disabled from programming, guaranteeing that no changes to the protection scheme are allowed. 14.2 64-bit Password The 64-bit Password is located in its own memory space and is accessible through the use of the Password Program and Verify commands (see "Password Verify Command"). The password function works in conjunction with the Password Mode Locking Bit, which when set, prevents the Password Verify command from reading the contents of the password on the pins of the device. Document Number: 002-00615 Rev. *B Page 52 of 101 S29PL-J 14.3 Write Protect (WP#) The Write Protect feature provides a hardware method of protecting the upper two and lower two sectors without using VID. This function is provided by the WP# pin and overrides the previously discussed High Voltage Sector Protection on page 53 method. If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two outermost 4 Kword sectors on both ends of the flash array independent of whether it was previously protected or unprotected. If the system asserts VIH on the WP#/ACC pin, the device reverts the upper two and lower two sectors to whether they were last set to be protected or unprotected. That is, sector protection or unprotection for these sectors depends on whether they were last protected or unprotected using the method described in the High Voltage Sector Protection on page 53. Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. 14.3.1 Persistent Protection Bit Lock The Persistent Protection Bit (PPB) Lock is a volatile bit that reflects the state of the Password Mode Locking Bit after power-up reset. If the Password Mode Lock Bit is also set after a hardware reset (RESET# asserted) or a power-up reset, the ONLY means for clearing the PPB Lock Bit in Password Protection Mode is to issue the Password Unlock command. Successful execution of the Password Unlock command clears the PPB Lock Bit, allowing for sector PPBs modifications. Asserting RESET#, taking the device through a power-on reset, or issuing the PPB Lock Bit Set command sets the PPB Lock Bit to a "1" when the Password Mode Lock Bit is not set. If the Password Mode Locking Bit is not set, including Persistent Protection Mode, the PPB Lock Bit is cleared after power-up or hardware reset. The PPB Lock Bit is set by issuing the PPB Lock Bit Set command. Once set the only means for clearing the PPB Lock Bit is by issuing a hardware or power-up reset. The Password Unlock command is ignored in Persistent Protection Mode. 14.4 High Voltage Sector Protection Sector protection and unprotection may also be implemented using programming equipment. The procedure requires high voltage (VID) to be placed on the RESET# pin. Refer to Figure 14.1 on page 54 for details on this procedure. Note that for sector unprotect, all unprotected sectors must first be protected prior to the first sector write cycle. Document Number: 002-00615 Rev. *B Page 53 of 101 S29PL-J Figure 14.1 In-System Sector Protection/Sector Unprotection Algorithms START START Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address PLSCNT = 1 RESET# = VID Wait 1 s Temporary Sector Unprotect Mode No PLSCNT = 1 RESET# = VID Wait 1 s First Write Cycle = 60h? First Write Cycle = 60h? Temporary Sector Unprotect Mode Yes Yes Set up sector address No All sectors protected? Sector Protect: Write 60h to sector address with A7-A0 = 00000010 Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A7-A0 = 01000010 Wait 150 s Increment PLSCNT No Verify Sector Protect: Write 40h to sector address with A7-A0 = 00000010 Reset PLSCNT = 1 Read from sector address with A7-A0 = 00000010 Wait 15 ms Verify Sector Unprotect: Write 40h to sector address with A7-A0 = 00000010 Increment PLSCNT No No PLSCNT = 25? Yes Yes No Yes Remove VID from RESET# Protect another sector? No Write reset command Sector Protect complete Device failed Read from sector address with A7-A0 = 00000010 Data = 01h? Remove VID from RESET# Write reset command Sector Protect complete Sector Protect Algorithm PLSCNT = 1000? Yes Remove VID from RESET# Set up next sector address No Data = 00h? Yes Last sector verified? No Yes Write reset command Sector Protect complete Device failed Remove VID from RESET# Write reset command Sector Unprotect complete Sector Unprotect Algorithm Document Number: 002-00615 Rev. *B Page 54 of 101 S29PL-J 14.5 Temporary Sector Unprotect This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 14.2 on page 55 shows the algorithm, and Figure 22.1 on page 88 shows the timing diagrams, for this feature. While PPB lock is set, the device cannot enter the Temporary Sector Unprotection Mode. Figure 14.2 Temporary Sector Unprotect Operation START RESET# = VID (Note 1) Perform Erase or Program Operations RESET# = VIH Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected (If WP#/ACC = VIL, upper two and lower two sectors will remain protected). 2. All previously protected sectors are protected once again 14.6 Secured Silicon Sector Flash Memory Region The Secured Silicon Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN) The 128-word Secured Silicon sector is divided into 64 factory-lockable words that can be programmed and locked by the customer. The Secured Silicon sector is located at addresses 000000h-00007Fh in both Persistent Protection mode and Password Protection mode. Indicator bits DQ6 and DQ7 are used to indicate the factory-locked and customer locked status of the part. The system accesses the Secured Silicon Sector through a command sequence (see the Enter/Exit Secured Silicon Sector Command Sequence on page 62). After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. Once the Enter SecSi Sector Command sequence has been entered, the standard array cannot be accessed until the Exit SecSi Sector command has been entered or the device has been reset. On power-up, or following a hardware reset, the device reverts to sending commands to the normal address space. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled. Document Number: 002-00615 Rev. *B Page 55 of 101 S29PL-J 14.6.1 Factory-Locked Area (64 words) The factory-locked area of the Secured Silicon Sector (000000h-00003Fh) is locked when the part is shipped, whether or not the area was programmed at the factory. The Secured Silicon Sector Factory-locked Indicator Bit (DQ7) is permanently set to a "1". Optional Cypress programming services can program the factory-locked area with a random ESN, a customer-defined code, or any combination of the two. Because only Cypress can program and protect the factory-locked area, this method ensures the security of the ESN once the product is shipped to the field. Contact your local sales office for details on using Cypress's programming services. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon sector is enabled. 14.6.2 Customer-Lockable Area (64 words) The customer-lockable area of the Secured Silicon Sector (000040h-00007Fh) is shipped unprotected, which allows the customer to program and optionally lock the area as appropriate for the application. The Secured Silicon Sector Customer-locked Indicator Bit (DQ6) is shipped as "0" and can be permanently locked to "1" by issuing the Secured Silicon Protection Bit Program Command. The Secured Silicon Sector can be read any number of times, but can be programmed and locked only once. Note that the accelerated programming (ACC) and unlock bypass functions are not available when programming the Secured Silicon Sector. The Customer-lockable Secured Silicon Sector area can be protected using one of the following procedures: Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 14.1 on page 54, except that RESET# may be at either VIH or VID. This allows insystem protection of the Secured Silicon Sector Region without raising any device pin to a high voltage. Note that this method is only applicable to the Secured Silicon Sector. To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm shown in Figure on page 56. Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence to return to reading and writing the remainder of the array. The Secured Silicon Sector lock must be used with caution since, once locked, there is no procedure available for unlocking the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way. 14.6.3 Secured Silicon Sector Protection Bits The Secured Silicon Sector Protection Bits prevent programming of the Secured Silicon Sector memory area. Once set, the Secured Silicon Sector memory area contents are non-modifiable. Figure 14.3 Secured Silicon Sector Protect Verify START RESET# = VIH or VID Wait 1 s Write 60h to any address Write 40h to SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 Read from SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 Document Number: 002-00615 Rev. *B If data = 00h, SecSi Sector is unprotected. If data = 01h, SecSi Sector is protected. Remove VIH or VID from RESET# Write reset command SecSi Sector Protect Verify complete Page 56 of 101 S29PL-J 14.7 Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes. In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. 14.7.1 Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. 14.7.2 Write Pulse "Glitch" Protection Noise pulses of less than 3 ns (typical) on OE#, CE#, (CE1#, CE2# in PL129J) or WE# do not initiate a write cycle. 14.7.3 Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# (CE1# = CE2# in PL129J)= VIH or WE# = VIH. To initiate a write cycle, CE# (CE1# / CE2# in PL129J) and WE# must be a logical zero while OE# is a logical one. 14.7.4 Power-Up Write Inhibit If WE# = CE# (CE1#, CE2# in PL129J) = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. Document Number: 002-00615 Rev. *B Page 57 of 101 S29PL-J 15. Common Flash Memory Interface (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be deviceindependent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h, any time the device is ready to read array data. The system can read CFI information at the addresses given in Table 15.1 on page 58 to Table 15.4 on page 59. To terminate reading CFI data, the system must write the reset command. The CFI Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Table 15.1 to Table 15.4. The system must write the reset command to return the device to reading array data. For further information, please refer to the CFI Specification and CFI Publication 100. Contact your local sales office for copies of these documents. Table 15.1 CFI Query Identification String Addresses Data Description 10h 11h 12h 0051h 0052h 0059h Query Unique ASCII string "QRY" 13h 14h 0002h 0000h Primary OEM Command Set 15h 16h 0040h 0000h Address for Primary Extended Table 17h 18h 0000h 0000h Alternate OEM Command Set (00h = none exists) 19h 1Ah 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) Table 15.2 System Interface String Addresses Data Description 1Bh 0027h VCC Min. (write/erase) D7-D4: volt, D3-D0: 100 millivolt 1Ch 0036h VCC Max. (write/erase) D7-D4: volt, D3-D0: 100 millivolt 1Dh 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 0003h Typical timeout per single byte/word write 2N s 20h 0000h Typical timeout for Min. size buffer write 2N s (00h = not supported) 21h 0009h Typical timeout per individual block erase 2N ms 22h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 0004h Max. timeout for byte/word write 2N times typical 24h 0000h Max. timeout for buffer write 2N times typical 25h 0004h Max. timeout per individual block erase 2N times typical 26h 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Document Number: 002-00615 Rev. *B Page 58 of 101 S29PL-J Table 15.3 Device Geometry Definition Addresses Data Description 27h 0018h (PL127J) 0018h (PL129J) 0017h (PL064J) 0016h (PL032J) 28h 29h 0001h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 0000h 0000h Max. number of byte in multi-byte write = 2N (00h = not supported) 2Ch 0003h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 0007h 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 00FDh (PL127J) 00FDh (PL129J) 007Dh (PL064J) 003Dh (PL032J) Device Size = 2N byte Erase Block Region 2 Information (refer to the CFI specification or CFI publication 100) 32h 33h 34h 0000h 0000h 0001h 35h 36h 37h 38h 0007h 0000h 0020h 0000h Erase Block Region 3 Information (refer to the CFI specification or CFI publication 100) 39h 3Ah 3Bh 3Ch 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to the CFI specification or CFI publication 100) Table 15.4 Primary Vendor-Specific Extended Query Addresses Data 40h 41h 42h 0050h 0052h 0049h Query-unique ASCII string "PRI" 43h 0031h Major version number, ASCII (reflects modifications to the silicon) 44h 0033h Minor version number, ASCII (reflects modifications to the CFI table) 45h TBD 46h 0002h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 0001h Sector Protect 0 = Not Supported, X = Number of sectors in per group 48h 0001h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 0007h (PLxxxJ) Document Number: 002-00615 Rev. *B Description Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Silicon Revision Number (Bits 7-2) Sector Protect/Unprotect scheme 07 = Advanced Sector Protection Page 59 of 101 S29PL-J Table 15.4 Primary Vendor-Specific Extended Query (Continued) Addresses Data 4Ah 00E7h (PL127J) 00E7h (PL129J) 0077h (PL064J) 003Fh (PL032J) 4Bh 0000h 4Ch 0002h (PLxxxJ) 4Dh 0085h ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV 4Eh 0095h ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV 4Fh 0001h Top/Bottom Boot Sector Flag 00h = Uniform device, 01h = Both top and bottom boot with write protect, 02h = Bottom Boot Device, 03h = Top Boot Device, 04h = Both Top and Bottom 50h 0001h Program Suspend 0 = Not supported, 1 = Supported 57h 0004h Bank Organization 00 = Data at 4Ah is zero, X = Number of Banks 58h 0027h (PL127J) 0027h (PL129J) 0017h (PL064J) 000Fh (PL032J) Bank 1 Region Information X = Number of Sectors in Bank 1 59h 0060h (PL127J) 0060h (PL129J) 0030h (PL064J) 0018h (PL032J) Bank 2 Region Information X = Number of Sectors in Bank 2 5Ah 0060h (PL127J) 0060h (PL129J) 0030h (PL064J) 0018h (PL032J) Bank 3 Region Information X = Number of Sectors in Bank 3 5Bh 0027h (PL127J) 0027h (PL129J) 0017h (PL064J) 000Fh (PL032J) Bank 4 Region Information X = Number of Sectors in Bank 4 Document Number: 002-00615 Rev. *B Description Simultaneous Operation 00 = Not Supported, X = Number of Sectors excluding Bank 1 Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page Page 60 of 101 S29PL-J 16. Command Definitions Writing specific address and data commands or sequences into the command register initiates device operations. Table 16.1 on page 68 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE# (CE1# / CE2# in PL129J), whichever happens later. All data is latched on the rising edge of WE# or CE# (CE1# / CE2# in PL129J), whichever happens first. Refer to AC Characteristic on page 79 for timing diagrams. 16.1 Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector within the same bank. The system can read array data using the standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/Erase Resume Commands on page 66 for more information. After the device accepts a Program Suspend command, the corresponding bank enters the program-suspend-read mode, after which the system can read data from any non-program-suspended sector within the same bank. See Program Suspend/Program Resume Commands on page 67 for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the next section, Reset Command on page 61, for more information. See also Requirements for Reading Array Data on page 18 for more information. The table AC Characteristic on page 79 provides the read parameters, and Figure 17.2 on page 73 shows the timing diagram. 16.2 Reset Command Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don't cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to the read mode (or erasesuspend-read mode if that bank was in Erase Suspend and program-suspend-read mode if that bank was in Program Suspend). Document Number: 002-00615 Rev. *B Page 61 of 101 S29PL-J 16.3 Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in the other bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of autoselect codes without reinitiating the command sequence. Table 16.1 on page 68 shows the address and data requirements. To determine sector protection information, the system must write to the appropriate bank address (BA) and sector address (SA). Table 11.4 on page 19 shows the address range and bank number associated with each sector. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in Erase Suspend). 16.4 Enter/Exit Secured Silicon Sector Command Sequence The Secured Silicon Sector region provides a secured data area containing a random, eight word electronic serial number (ESN). The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Exit Secured Silicon Sector command sequence returns the device to normal operation. The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. Table 16.1 on page 68 shows the address and data requirements for both command sequences. See also Secured Silicon Sector Flash Memory Region on page 55 for further information. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled. Document Number: 002-00615 Rev. *B Page 62 of 101 S29PL-J 16.5 Word Program Command Sequence Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 16.1 on page 68 shows the address and data requirements for the program command sequence. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a [program/ erase] operation is in progress. When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to Write Operation Status on page 71 for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank has returned to the read mode, to ensure data integrity. Note that the Secured Silicon Sector, autoselect and CFI functions are unavailable when the Secured Silicon Sector is enabled. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from "0" back to a "1." Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still "0." Only erase operations can convert a "0" to a "1." 16.5.1 Unlock Bypass Command Sequence The unlock bypass feature allows the system to program data to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 16.1 on page 68 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. (See Table 16.2 on page 69) The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH any operation other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Figure 16.1 on page 64 illustrates the algorithm for the program operation. Refer to the table Erase/Program Operations on page 83 for parameters, and Figure 21.6 on page 84 for timing diagrams. Document Number: 002-00615 Rev. *B Page 63 of 101 S29PL-J Figure 16.1 Program Operation START Write Program Command Sequence Data Poll from System Embedded Program algorithm in progress Verify Data? No Yes Increment Address No Last Address? Yes Programming Completed Note See Table 16.1 on page 68 for program command sequence. 16.6 Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 16.1 on page 68 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to Write Operation Status on page 71 for information on these status bits. Any commands written during the chip erase operation are ignored. Note that Secured Silicon Sector, autoselect, and CFI functions are unavailable when a [program/erase] operation is in progress. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 16.2 on page 65 illustrates the algorithm for the erase operation. Refer to the tables in Erase/Program Operations on page 83 for parameters, and Figure 21.8 on page 85 for timing diagrams. Document Number: 002-00615 Rev. *B Page 64 of 101 S29PL-J 16.7 Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 16.1 on page 68 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 s occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 s, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If any command other than 30h, B0h, F0h is input during the time-out period, the normal operation will not be guaranteed. The system must rewrite the command sequence and any additional addresses and commands. Note that Secured Silicon Sector, autoselect, and CFI functions are unavailable when a [program/erase] operation is in progress. The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer). The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing bank. The system can determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to Write Operation Status on page 71 for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 8.2 on page 12 illustrates the algorithm for the erase operation. Refer to the tables in Erase/Program Operations on page 83 for parameters, and Figure 21.8 on page 85 for timing diagrams. Figure 16.2 Erase Operation START Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System No Embedded Erase algorithm in progress Data = FFh? Yes Erasure Completed Notes 1. See Table 16.1 on page 68 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. Document Number: 002-00615 Rev. *B Page 65 of 101 S29PL-J 16.8 Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the 50 s time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 35 s to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. Addresses are "don't-cares" when writing the Erase suspend command. After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device "erase suspends" all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to Write Operation Status on page 71 for information on these status bits. After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard Word Program operation. Refer to Write Operation Status on page 71 for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. Refer to Table 11.9, Secured Silicon Sector Addresses on page 42 and Autoselect Command Sequence on page 62 for details. To resume the sector erase operation, the system must write the Erase Resume command (address bits are don't care). The bank address of the erase-suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. If the Persistent Sector Protection Mode Locking Bit is verified as programmed without margin, the Persistent Sector Protection Mode Locking Bit Program Command should be reissued to improve program margin. If the Secured Silicon Sector Protection Bit is verified as programmed without margin, the Secured Silicon Sector Protection Bit Program Command should be reissued to improve program margin. After programming a PPB, two additional cycles are needed to determine whether the PPB has been programmed with margin. If the PPB has been programmed without margin, the program command should be reissued to improve the program margin. Also note that the total number of PPB program/erase cycles is limited to 100 cycles. Cycling the PPBs beyond 100 cycles is not guaranteed. After erasing the PPBs, two additional cycles are needed to determine whether the PPB has been erased with margin. If the PPBs has been erased without margin, the erase command should be reissued to improve the program margin. The programming of either the PPB or DYB for a given sector or sector group can be verified by writing a Sector Protection Status command to the device. Note that there is no single command to independently verify the programming of a DYB for a given sector group. Document Number: 002-00615 Rev. *B Page 66 of 101 S29PL-J 16.9 Program Suspend/Program Resume Commands The Program Suspend command allows the system to interrupt an embedded programming operation so that data can read from any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the programming operation within tPSL (program suspend latency) and updates the status bits. Addresses are "don't-cares" when writing the Program Suspend command. After the programming operation has been suspended, the system can read array data from any non-suspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area, then user must use the proper command sequences to enter and exit this region. The system may also write the autoselect command sequence when the device is in Program Suspend mode. The device allows reading autoselect codes in the suspended sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to Program Suspend mode, and is ready for another valid operation. See Autoselect Command Sequence on page 62 for more information. After the Program Resume command is written, the device reverts to programming. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See Write Operation Status on page 71 for more information. The system must write the Program Resume command (address bits are "don't care") to exit the Program Suspend mode and continue the programming operation. Further writes of the Program Resume command are ignored. Another Program Suspend command can be written after the device has resumed programming. 16.10 Command Definitions Tables Table 16.1 on page 68 contains the Memory Array Command Definitions. Document Number: 002-00615 Rev. *B Page 67 of 101 S29PL-J Command (Notes) Cycles Table 16.1 Memory Array Command Definitions Bus Cycles (Notes 1-4) Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data (BA) X0E (10) (BA) X0F (10) 1 RA RD Reset (6) 1 XXX F0 Manufacturer ID 4 555 AA 2AA 55 (BA) 555 90 (BA) X00 01 Device ID (10) 6 555 AA 2AA 55 (BA) 555 90 (BA) X01 227E Secured Silicon Sector Factory Protect (8) 4 555 AA 2AA 55 (BA) 555 90 X03 (8) Sector Group Protect Verify(9) 4 555 AAA 2AA 55 (BA) 555 90 (SA) X02 XX00/ XX01 Program 4 555 AA 2AA 55 555 A0 PA PD Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10 Sector Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30 Program/Erase Suspend (11) 1 BA B0 Program/Erase Resume (12) 1 BA 30 CFI Query (13) 1 55 98 Accelerated Program (14) 2 XX A0 PA PD Unlock Bypass Entry (14) 3 555 AA 2AA 55 555 20 Unlock Bypass Program (14) 2 XX A0 PA PD Unlock Bypass Erase (14) 2 XX 80 XX 10 Unlock Bypass CFI (13)(14) 1 XX 98 Unlock Bypass Reset (14) 2 XXX 90 XXX 00 Autoselect (Note 7) Read (5) Legend BA = Address of bank switching to autoselect mode, bypass mode, or erase operation. Determined by PL127J: Amax:A20, PL064J and PL129J: Amax:A19, PL032J: Amax:A18. PA = Program Address (Amax:A0). Addresses latch on falling edge of WE# or CE# (CE1#/CE2# for PL129J) pulse, whichever happens later. PD = Program Data (DQ15:DQ0) written to location PA. Data latches on rising edge of WE# or CE# (CE1#/CE2# for PL129J) pulse, whichever happens first. RA = Read Address (Amax:A0). RD = Read Data (DQ15:DQ0) from location RA. SA = Sector Address (Amax:A12) for verifying (in autoselect mode) or erasing. WD = Write Data. See "Configuration Register" definition for specific write data. Data latched on rising edge of WE#. X = Don't care Notes 1. See Table 11.1 on page 17 for description of bus operations. 2. All values are in hexadecimal. 3. Shaded cells in table denote read cycles. All other cycles are write operations. 4. During unlock and command cycles, when lower address bits are 555 or 2AAh as shown in table, address bits higher than A11 (except where BA is required) and data bits higher than DQ7 are don't cares. 5. No unlock or command cycles required when bank is reading array data. 6. The Reset command is required to return to reading array (or to erase-suspend-read mode if previously in Erase Suspend) when bank is in autoselect mode, or if DQ5 goes high (while bank is providing status information). 7. Fourth cycle of autoselect command sequence is a read cycle. System must provide bank address to obtain manufacturer ID or device ID information. See Autoselect Command Sequence on page 62 for more information. 8. The data is DQ6=1 for factory and customer locked and DQ7=1 for factory locked. 9. The data is 00h for an unprotected sector group and 01h for a protected sector group. 10. Device ID must be read across cycles 4, 5, and 6. PL127J (X0Eh = 2220h, X0Fh = 2200h), PL129J (X0Eh = 2221h, X0Fh = 2200h),PL064J (X0Eh = 2202h, X0Fh = 2201h), PL032J (X0Eh = 220Ah, X0Fh = 2201h). 11. System may read and program in non-erasing sectors, or enter autoselect mode, when in Program/Erase Suspend mode. Program/Erase Suspend command is valid only during a sector erase operation, and requires bank address. 12. Program/Erase Resume command is valid only during Erase Suspend mode, and requires bank address. 13. Command is valid when device is ready to read array data or when device is in autoselect mode. 14. WP#/ACC must be at VID during the entire operation of command. Document Number: 002-00615 Rev. *B Page 68 of 101 S29PL-J Cycles Table 16.2 Sector Protection Command Definitions Addr Reset 1 XXX F0 Secured Silicon Sector Entry (16) 3 555 AA 2AA 55 555 88 Secured Silicon Sector Exit (16) 4 555 AA 2AA 55 555 90 XX 00 Secured Silicon Protection Bit Program (Notes 5, 6) 6 555 AA 2AA 55 555 60 OW 68 OW 48 Secured Silicon Protection Bit Status 5 555 AA 2AA 55 555 60 OW 48 OW RD (0) Password Program (Notes 5, 7, 8) 4 555 AA 2AA 55 555 38 XX [0-3] PD [0-3] Password Verify (Notes 6, 8, 9) 4 555 AA 2AA 55 555 C8 PWA [0-3] PWD [0-3] Password Unlock (Notes 7, 10, 11) 7 555 AA 2AA 55 555 28 PWA [0] PWD [0] PWA [1] PWD [1] PWA [2] PWD [2] PPB Program (Notes 5, 6, 11) 6 555 AA 2AA 55 555 60 (SA) WP 68 (SA) WP 48 (SA) WP RD(0) PPB Status 4 555 AA 2AA 55 BA+55 5 90 (SA) WP RD (0) All PPB Erase (Notes 5, 6, 13, 14) 6 555 AA 2AA 55 555 60 WP 60 (SA) 40 (SA) WP RD(0) PPB Lock Bit Set 3 555 AA 2AA 55 555 78 58 SA RD (1) X1 PL RD(0) SL RD(0) Command (Notes) Bus Cycles (Notes 1-4) Data Addr Data Addr Data Addr Data PPB Lock Bit Status (15) 4 555 AA 2AA 55 BA+55 5 DYB Write (7) 4 555 AA 2AA 55 555 48 SA DYB Erase (7) 4 555 AA 2AA 55 555 48 SA X0 58 SA RD (0) Addr Data Addr Data OW RD (0) DYB Status (6) 4 555 AA 2AA 55 BA+55 5 PPMLB Program (Notes 5, 6, 12) 6 555 AA 2AA 55 555 60 PL 68 PL 48 PPMLB Status (5) 5 555 AA 2AA 55 555 60 PL 48 PL RD (0) SPMLB Program (Notes 5, 6, 12) 6 555 AA 2AA 55 555 60 SL 68 SL 48 SPMLB Status (5) 5 555 AA 2AA 55 555 60 SL 48 SL RD (0) Addr Data PWA [3] PWD [3] Legend DYB = Dynamic Protection Bit OW = Address (A7:A0) is (00011010) PD[3:0] = Password Data (1 of 4 portions) PPB = Persistent Protection Bit PWA = Password Address. A1:A0 selects portion of password. PWD = Password Data being verified. PL = Password Protection Mode Lock Address (A7:A0) is (00001010) RD(0) = Read Data DQ0 for protection indicator bit. RD(1) = Read Data DQ1 for PPB Lock status. SA = Sector Address where security command applies. Address bits Amax:A12 uniquely select any sector. SL = Persistent Protection Mode Lock Address (A7:A0) is (00010010) WP = PPB Address (A7:A0) is (00000010) X = Don't care PPMLB = Password Protection Mode Locking Bit SPMLB = Persistent Protection Mode Locking Bit Document Number: 002-00615 Rev. *B Page 69 of 101 S29PL-J Notes 1. See Table 11.1 on page 17 for description of bus operations. 2. All values are in hexadecimal. 3. Shaded cells in table denote read cycles. All other cycles are write operations. 4. During unlock and command cycles, when lower address bits are 555 or 2AAh as shown in table, address bits higher than A11 (except where BA is required) and data bits higher than DQ7 are don't cares. 5. The reset command returns device to reading array. 6. Cycle 4 programs the addressed locking bit. Cycles 5 and 6 validate bit has been fully programmed when DQ0 = 1. If DQ0 = 0 in cycle 6, program command must be issued and verified again. 7. Data is latched on the rising edge of WE#. 8. Entire command sequence must be entered for each portion of password. 9. Command sequence returns FFh if PPMLB is set. 10. The password is written over four consecutive cycles, at addresses 0-3. 11. A 2 s timeout is required between any two portions of password. 12. A 100 s timeout is required between cycles 4 and 5. 13. A 1.2 ms timeout is required between cycles 4 and 5. 14. Cycle 4 erases all PPBs. Cycles 5 and 6 validate bits have been fully erased when DQ0 = 0. If DQ0 = 1 in cycle 6, erase command must be issued and verified again. Before issuing erase command, all PPBs should be programmed to prevent PPB overerasure. 15. DQ1 = 1 if PPB locked, 0 if unlocked. 16. Once the Secured Silicon Sector Entry Command sequence has been entered, the standard array cannot be accessed until the Exit SecSi Sector command has been entered or the device has been reset. Document Number: 002-00615 Rev. *B Page 70 of 101 S29PL-J 17. Write Operation Status The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 17.1 on page 75 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed. 17.1 DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 s, then that bank returns to the read mode. During the Embedded Erase algorithm, Data# Polling produces a "0" on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a "1" on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 400 s, then the bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ15-DQ0 on the following read cycles. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ15-DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ15-DQ0 may be still invalid. Valid data on DQ15-DQ0 will appear on successive read cycles. Table 17.1 on page 75 shows the outputs for Data# Polling on DQ7. Figure 17.1 on page 72 shows the Data# Polling algorithm. Figure 21.10 on page 86 shows the Data# Polling timing diagram. Document Number: 002-00615 Rev. *B Page 71 of 101 S29PL-J Figure 17.1 Data# Polling Algorithm START Read DQ7-DQ0 Addr = VA DQ7 = Data? Yes No No DQ5 = 1? Yes Read DQ7-DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS Notes 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = "1" because DQ7 may change simultaneously with DQ5. 17.2 RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or one of the banks is in the erase-suspend-read mode. Table 17.1 on page 75 shows the outputs for RY/BY#. 17.3 DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 400 s, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. Document Number: 002-00615 Rev. *B Page 72 of 101 S29PL-J The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erasesuspended. Alternatively, the system can use DQ7 (see the DQ7: Data# Polling on page 71). If a program address falls within a protected sector, DQ6 toggles for approximately 1 s after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 17.1 on page 75 shows the outputs for Toggle Bit I on DQ6. Figure 17.2 on page 73 shows the toggle bit algorithm. Figure 21.11 on page 87 in shows the toggle bit timing diagrams. Figure 21.12 on page 87 shows the differences between DQ2 and DQ6 in graphical form. See also the DQ2: Toggle Bit II on page 74. Figure 17.2 Toggle Bit Algorithm START Read Byte (DQ7-DQ0) Address =VA Read Byte (DQ7-DQ0) Address =VA Toggle Bit = Toggle? No Yes No DQ5 = 1? Yes Read Byte Twice (DQ7-DQ0) Address = VA Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note: The system should recheck the toggle bit even if DQ5 = "1" because the toggle bit may stop toggling as DQ5 changes to "1." See the DQ6: Toggle Bit I on page 72 and DQ2: Toggle Bit II on page 74 for more information. Document Number: 002-00615 Rev. *B Page 73 of 101 S29PL-J 17.4 DQ2: Toggle Bit II The "Toggle Bit II" on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# (CE1# / CE2# for PL129J) to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 17.1 on page 75 to compare outputs for DQ2 and DQ6. Figure 17.2 on page 73 shows the toggle bit algorithm in flowchart form, and the DQ2: Toggle Bit II on page 74 explains the algorithm. See also the DQ6: Toggle Bit I on page 72. Figure 21.11 on page 87 shows the toggle bit timing diagram. Figure 21.12 on page 87 shows the differences between DQ2 and DQ6 in graphical form. 17.5 Reading Toggle Bits DQ6/DQ2 Refer to Figure 17.2 on page 73 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7-DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7-DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 17.2 on page 73). 17.6 DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a "1," indicating that the program or erase cycle was not successfully completed. The device may output a "1" on DQ5 if the system tries to program a "1" to a location that was previously programmed to "0." Only an erase operation can change a "0" back to a "1." Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a "1." Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode). Document Number: 002-00615 Rev. *B Page 74 of 101 S29PL-J 17.7 DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a "0" to a "1." See also the Sector Erase Command Sequence on page 65. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is "1," the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is "0," the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 17.1 shows the status of DQ3 relative to the other status bits. Table 17.1 Write Operation Status DQ7 (Note 2) DQ6 DQ5 (Note 1) DQ3 DQ2 (Note 2) RY/BY# DQ7# Toggle 0 N/A No toggle 0 0 Toggle 0 1 Toggle 0 1 No toggle 0 N/A Toggle 1 Data Data Data Data Data 1 DQ7# Toggle 0 N/A N/A 0 Reading within Program Suspended Sector Invalid (Not Allowed) Invalid (Not Allowed) Invalid (Not Allowed) Invalid (Not Allowed) Invalid (Not Allowed) 1 Reading within Non-program Suspended Sector Data Data Data Data Data 1 Status Embedded Program Standard Algorithm Mode Embedded Erase Algorithm Erase Suspended Sector Erase SuspendErase Non-Erase Suspend Read Suspended Mode Sector Erase-Suspend -Program Program Suspend Mode (Note 3) Notes: 1. DQ5 switches to `1' when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to DQ5: Exceeded Timing Limits on page 74 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank. Document Number: 002-00615 Rev. *B Page 75 of 101 S29PL-J 18. Absolute Maximum Ratings Storage Temperature Plastic Packages -65C to +150C Ambient Temperature with Power Applied -65C to +125C Voltage with Respect to Ground VCC (Note 1) -0.5 V to +4.0 V A9, OE#, and RESET# (Note 2) -0.5 V to +12.5 V WP#/ACC (Note 2) -0.5 V to +10.5 V -0.5 V to VCC +0.5 V All other pins (Note 1) Output Short Circuit Current (Note 3) 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 18.1 on page 76. 2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is -0.5 V. During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot VSS to - 2.0 V for periods of up to 20 ns. See Figure 18.1 on page 76. Maximum DC input voltage on pin A9, OE#, and RESET# is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5 V which may overshoot to +12.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability Figure 18.1 Maximum Overshoot Waveforms 20 ns 20 ns 20 ns VCC +2.0 V VCC +0.5 V +0.8 V -0.5 V -2.0 V 2.0 V 20 ns Maximum Negative Overshoot Waveform Document Number: 002-00615 Rev. *B 20 ns 20 ns Maximum Positive Overshoot Waveform Page 76 of 101 S29PL-J 19. Operating Ranges Operating ranges define those limits between which the functionality of the device is guaranteed. Industrial (I) Devices Ambient Temperature (TA)................ -40C to +85C Wireless (W) Devices Ambient Temperature (TA)................ -25C to +85C Supply Voltages VCC .................................................. 2.7-3.6 V VIO (see Note)................................... 1.65-1.95 V (for PL127J and PL129J) or 2.7-3.6 V (for all PLxxxJ devices) Note: For all AC and DC specifications, VIO = VCC; contact your local sales office for other VIO options. Document Number: 002-00615 Rev. *B Page 77 of 101 S29PL-J 20. DC Characteristics Table 20.1 CMOS Compatible Parameter ILI ILR Parameter Description (notes) Input Load Current A9, OE#, RESET# Input Load Current Reset Leakage Current ILO Output Leakage Current ICC1 VCC Active Read Current (1, 2) ILIT Test Conditions VIN = VSS to VCC, VCC = VCC max Max 1.0 Unit A VCC = VCC max; VID= 12.5 V 35 A VCC = VCC max; VID= 12.5 V VOUT = VSS to VCC, OE# = VIH VCC = VCC max 5 MHz OE# = VIH, VCC = VCC max 10 MHz OE# = VIH, WE# = VIL CE#, RESET#, WP#/ACC = VIO 0.3 V RESET# = VSS 0.3 V 35 A 1.0 A 20 45 15 0.2 0.2 30 55 25 5 5 VIH = VIO 0.3 V; VIL = VSS 0.3 V 0.2 5 21 46 21 46 45 70 45 70 17 25 mA 10 15 mA -0.4 0.4 V -0.5 0.8 V VIO-0.4 VIO+0.4 V 2.0 VCC+0.3 V 8.5 9.5 V 11.5 12.5 V 0.1 V 0.4 V ICC5 VCC Active Write Current (2, 3) VCC Standby Current (2) VCC Reset Current (2) Automatic Sleep Mode (Notes 2, 4) ICC6 VCC Active Read-While-Program Current (1, 2) OE# = VIH, ICC7 VCC Active Read-While-Erase Current (1, 2) OE# = VIH, ICC2 ICC3 ICC4 ICC8 ICC9 VIL VIH VHH VID VOL VOH VLKO VCC Active Program-While-EraseOE# = VIH Suspended Current (2, 5) VCC Active Page Read Current (2) OE# = VIH, 8 word Page Read VIO = 1.65-1.95 V (PL127J and PL129J) Input Low Voltage VIO = 2.7-3.6 V VIO = 1.65-1.95 V (PL127J AND PL129J) Input High Voltage VIO = 2.7-3.6 V Voltage for ACC VCC = 3.0 V 10% Program Acceleration Voltage for Autoselect and VCC = 3.0 V 10% Temporary Sector Unprotect IOL = 100 A, VCC = VCC min, VIO = 1.65-1.95 V Output Low Voltage (PL127J AND PL129J) IOL = 2.0 mA, VCC = VCC min, VIO = 2.7-3.6 V IOH = -100 A, VCC = VCC min, VIO = 1.65-1.95 V Output High Voltage (PL127J AND PL129J) IOH = --100 A, VIO = VCC min Low VCC Lock-Out Voltage (5) Min Typ 5 MHz 10 MHz 5 MHz 10 MHz VIO-0.1 VCC-0.2V 2.3 mA mA A A A mA mA V 2.5 V V Notes 1. The ICC current listed is typically less than 5 mA/MHz, with OE# at VIH. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 2 A. 5. Not 100% tested. 6. In S29PL129J there are two CE# (CE1#, CE2#). Valid CE1#/CE2# conditions: (CE1# = VIL, CE2# = VIH,) or (CE1# = VIH, CE2# = VIL) or (CE1# = VIH, CE2# = VIH) Document Number: 002-00615 Rev. *B Page 78 of 101 S29PL-J 21. AC Characteristic 21.1 Test Conditions Figure 21.1 Test Setups 3.6 V 2.7 k Device Under Test Device Under Test CL CL 6.2 k VIO = 3.0 V VIO = 1.8 V (PL127J and PL129J) Note Diodes are IN3064 or equivalent Table 21.1 Test Specifications Test Conditions Output Load Unit 1 TTL gate Output Load Capacitance, CL (including jig capacitance) Input Rise and Fall Times All Speeds VIO = 1.8 V (PL127J AND PL129J) 30 pF 5 ns VIO = 3.0 V Input Pulse Levels VIO = 1.8 V (PL127J AND PL129J) 0.0 - 1.8 VIO = 3.0 V 0.0-3.0 V Input timing measurement reference levels VIO/2 V Output timing measurement reference levels VIO/2 V Document Number: 002-00615 Rev. *B Page 79 of 101 S29PL-J 21.2 Switching Waveforms Table 21.2 Key To Switching Waveforms Waveform Inputs Outputs Steady Changing from H to L Changing from L to H Don't Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) Figure 21.2 Input Waveforms and Measurement Levels VIO VIO/2 Input VIO/2 Measurement Level Output 0.0 V 21.3 Read Operations Table 21.3 Read-Only Operations Parameter Description (Notes) JEDEC Std. tAVAV tRC Read Cycle Time (1) tAVQV tACC Address to Output Delay tELQV tCE Chip Enable to Output Delay Speed Options Test Setup Unit 55 60 65 70 80 Min 55 60 65 70 80 ns CE#, OE# = VIL Max 55 60 65 70 80 ns OE# = VIL Max 55 60 65 70 80 ns 25 30 30 ns 35 ns Page Access Time Max 20 25 tGLQV tOE Output Enable to Output Delay Max 20 25 tEHQZ tDF Chip Enable to Output High Z (3) Max 16 ns tGHQZ tDF Output Enable to Output High Z (1, 3) Max 16 ns tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First (3) Min 5 ns Output Enable Hold Time (1) Read Min 0 ns tOEH Toggle and Data# Polling Min 10 ns tPACC 30 Notes 1. Not 100% tested. 2. See Figure 21.1 on page 79 and Table 21.1 on page 79 for test specifications 3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of VCC /2. The time from OE# high to the data bus driven to VCC /2 is taken as tDF. 4. S29PL129J has two CE# (CE1#, CE2#). 5. Valid CE1# / CE2# conditions: (CE1# = VIL,CE2# = VIH) or (CE1# = VIH,CE2# = VIL) or (CE1# = VIH, CE2# = VIH) 6. Valid CE1# / CE2# transitions: (CE1# = VIL,CE2# = VIH) or (CE1# = VIH,CE2# = VIL) to (CE1# = CE2# = VIH) 7. Valid CE1# / CE2# transitions: (CE1# = CE2# = VIH) to (CE1# = VIL,CE2# = VIH) or (CE1# = VIH,CE2# = VIL) 8. For 70 pF Output Load Capacitance, 2 ns will be added to the above tACC,tCE,tPACC,tOE values for all speed grades Document Number: 002-00615 Rev. *B Page 80 of 101 S29PL-J Figure 21.3 Read Operation Timings tRC Addresses Stable Addresses tACC CE# tRH tRH tD tOE OE# tOEH WE tCE tOH High Z Data High Z Valid Data RESET# RY/BY# 0V Notes 1. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 2. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2# Figure 21.4 Page Read Operation Timings Same Page Amax-A3 A2-A0 Aa tACC Data Ab tPACC Qa Ad Ac tPACC Qb tPACC Qc Qd CE# OE# Notes 1. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 2. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2# Document Number: 002-00615 Rev. *B Page 81 of 101 S29PL-J 21.4 Reset Table 21.4 Hardware Reset (RESET#) Parameter JEDEC Description Std All Speed Options Unit tReady RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) Max 20 s tReady RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH Reset High Time Before Read (See Note) Min 50 ns tRPD RESET# Low to Standby Mode Min 20 s tRB RY/BY# Recovery Time Min 0 ns Note Not 100% tested. Figure 21.5 Reset Timings RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP Notes 1. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 2. S29PL129J - There are two CE# (CE1#, CE2#). In the below waveform CE# = CE1# or CE2# Document Number: 002-00615 Rev. *B Page 82 of 101 S29PL-J 21.5 Erase/Program Operations Table 21.5 Erase and Program Operations Parameter Speed Options (ns) JEDEC Std tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min tWLAX tDVWH Description tASO Address Setup Time to OE# low during toggle bit polling Min tAH Address Hold Time Min tAHT Address Hold Time From CE# (CE1#, CE#2 in PL129J) or OE# high during toggle bit polling Min tDS Data Setup Time Min tDH 55 60 65 70 80 55 60 65 70 80 0 ns 15 30 ns 35 0 25 Unit ns ns 30 ns Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling Min 10 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# (CE1# or CE#2 in PL129J) Setup Time Min 0 ns tWHEH tCH CE# (CE1# or CE#2 in PL129J) Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 ns tWPH Write Pulse Width High Min tSR/W Latency Between Read and Write Operations Min 0 ns tWHDX tWHDL 20 25 ns tWHWH1 tWHWH1 Programming Operation (Note 4) Typ 6 s tWHWH1 tWHWH1 Accelerated Programming Operation (Note 4) Typ 4 s tWHWH2 tWHWH2 Sector Erase Operation (Note 4) Typ 0.5 sec tVCS VCC Setup Time (Note 1) Min 50 s tRB Write Recovery Time from RY/BY# Min 0 ns Program/Erase Valid to RY/BY# Delay Max 90 ns Min 35 ns tPSL Program Suspend Latency Max 35 s tESL Erase Suspend Latency Max 35 s tBUSY Notes: 1. Not 100% tested. 2. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 3. S29PL129J - There are two CE# (CE1#, CE2#). 4. See Table 22.4 on page 92 for more information. Document Number: 002-00615 Rev. *B Page 83 of 101 S29PL-J 21.6 Timing Diagrams Figure 21.6 Program Operation Timings Program Command Sequence (last two cycles) tAS tWC Addresses Read Status Data (last two cycles) 555h PA PA PA tAH CE# tCH OE# tWHWH1 tWP WE# tWPH tCS tDS tDH A0h Data PD Status tBUSY DOUT tRB RY/BY# VCC tVCS Notes 1. PA = program address, PD = program data, DOUT is the true data at the program address 2. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 3. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2# Document Number: 002-00615 Rev. *B Page 84 of 101 S29PL-J Figure 21.7 Accelerated Program Timing Diagram VHH WP#/ACC VIL or VIH VIL or VIH tVHH tVHH Figure 21.8 Chip/Sector Erase Operation Timings Erase Command Sequence (last two cycles) tAS tWC 2AAh Addresses Read Status Data VA SA VA 555h for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h 30h Status DOUT 10 for Chip Erase tBUSY tRB RY/BY# tVCS VCC Notes 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 71 2. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 3. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2#. Document Number: 002-00615 Rev. *B Page 85 of 101 S29PL-J Figure 21.9 Back-to-back Read/Write Cycle Timings Addresses tWC tWC tRC Valid PA Valid RA tWC tAH tAS Valid PA Valid PA tAS tCPH tACC tAH tCE CE# tCP tOE OE# tOEH tGHWL tWP WE# tDF tWPH tDS tOH tDH Valid Out Valid In Data Valid In Valid In tSR/W WE# Controlled Write Cycle Read Cycle CE# Controlled Write Cycles Figure 21.10 Data# Polling Timings (During Embedded Algorithms) tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ7 Complement Complement DQ6-DQ0 Status Data Status Data True Valid Data High Z True Valid Data tBUSY RY/BY# Note VA = Valid address. The illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle Document Number: 002-00615 Rev. *B Page 86 of 101 S29PL-J Figure 21.11 Toggle Bit Timings (During Embedded Algorithms) tAHT tAS Addresses tAHT tASO CE# tCEPH tOEH WE# tOEPH OE# tDH DQ6/DQ2 tOE Valid Data Valid Status Valid Status Valid Status (first read) (second read) (stops toggling) Valid Data RY/BY# Notes 1. VA = Valid address; not required for DQ6. The illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle 2. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 3. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2# Figure 21.12 DQ2 vs. DQ6 Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Read Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete DQ6 DQ2 Note DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. Document Number: 002-00615 Rev. *B Page 87 of 101 S29PL-J 22. Protect/Unprotect Table 22.1 Temporary Sector Unprotect Parameter JEDEC Unit Std Description All Speed Options tVIDR VID Rise and Fall Time (See Note) Min 500 ns tVHH VHH Rise and Fall Time (See Note) Min 250 ns tRSP RESET# Setup Time for Temporary Sector Unprotect Min 4 s tRRB RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect Min 4 s Note Not 100% tested. Figure 22.1 Temporary Sector Unprotect Timing Diagram VID VID RESET# VIL or VIH VIL or VIH tVIDR tVIDR Program or Erase Command Sequence CE# WE# tRSP tRRB RY/BY# Document Number: 002-00615 Rev. *B Page 88 of 101 S29PL-J Figure 22.2 Sector/Sector Block Protect and Unprotect Timing Diagram VID VIH RESET# SA, A6, A1, A0 Valid* Valid* Sector Group Protect/Unprotect Data 60h 60h Valid* Verify 40h Status 1 s CE# Sector Group Protect: 150 s Sector Group Unprotect: 15 ms WE# OE# Notes 1. For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. 2. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 3. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2# Document Number: 002-00615 Rev. *B Page 89 of 101 S29PL-J 22.1 Controlled Erase Operations Table 22.2 Alternate CE# Controlled Erase and Program Operations Parameter JEDEC Std tWC tAVAV tAS tAVWL tAH tELAX tDVEH tDS tDH tEHDX tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH1 tWHWH2 Description (Notes) Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recovery Time Before Write (OE# High to tGHEL WE# Low) tWS WE# Setup Time tWH WE# Hold Time tCP CE# (CE1# or CE#2 in PL129J) Pulse Width tCPH CE# (CE1# or CE#2 in PL129J) Pulse Width High tWHWH1 Programming Operation (Note 2) tWHWH1 Accelerated Programming Operation (Note 2) tWHWH2 Sector Erase Operation (Note 2) Min Min Min Min Min 55 55 30 25 Speed Options 60 65 70 60 65 70 0 35 30 0 80 80 Unit ns ns ns ns ns Min 0 ns Min Min Min Min Typ Typ Typ 0 0 ns ns ns ns s s sec 35 20 40 25 6 4 0.5 Notes 1. Not 100% tested. 2. See Erase And Programming Performance on page 92 for more information. Document Number: 002-00615 Rev. *B Page 90 of 101 S29PL-J Figure 22.3 Alternate CE# Controlled Write (Erase/Program) Operation Timings PA for program SA for sector erase 555 for chip erase 555 for program 2AA for erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tWHWH1 or 2 tCP CE# tWS tCPH tBUSY tDS tDH DQ7# Data tRH A0 for program 55 for erase DOUT PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# Notes 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data. 3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device 4. S29PL129J - During CE1# transitions, CE2# = VIH; During CE2# transitions, CE1# = VIH 5. S29PL129J - There are two CE# (CE1#, CE2#). In the above waveform CE# = CE1# or CE2# Table 22.3 CE1#/CE2# Timing (S29PL129J only) Parameter JEDEC Description Std tCCR CE1#/CE2# Recover Time (See Note) Min All Speed Options Unit 0 ns Note This parameter is defined for CE1#/CE2# recover time for read/read, program/read, and read/program operations. Program/program operation are not allowed and only a single program operation is allowed at one time. Document Number: 002-00615 Rev. *B Page 91 of 101 S29PL-J Figure 22.4 Timing Diagram for Alternating Between CE1# and CE2# Control CE1# tCCR tCCR CE2# Table 22.4 Erase And Programming Performance Typ (Note 1) Max (Note 2) Unit 0.5 2 sec PL127J/129J 135 216 sec PL064J 71 113.6 sec PL032J 39 62.4 sec 6 100 s Parameter Sector Erase Time Chip Erase Time Word Program Time Accelerated Word Program Chip Program Time (Note 3) 4 60 s PL127J/129J 50.4 200 sec PL064J 25.2 50.4 sec PL032J 12.6 25.2 sec Comments Excludes 00h programming prior to erasure (Note 4) Excludes system level overhead (Note 5) Notes 1. Typical program and erase times assume the following conditions: 25C, 3.0 V VCC, 100,000 cycles. Additionally, programming typicals assume checkerboard pattern. All values are subject to change. 2. Under worst case conditions of 90C, VCC = 2.7 V, 1,000,000 cycles. All values are subject to change. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 16.1 on page 68 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 100,000 cycles. Document Number: 002-00615 Rev. *B Page 92 of 101 S29PL-J 23. Pin Capacitance 23.1 BGA Pin Capacitance Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6.3 7 pF COUT Output Capacitance VOUT = 0 7.0 8 pF CIN2 Control Pin Capacitance VIN = 0 5.5 8 pF CIN3 WP#/ACC Pin Capacitance VIN = 0 11 12 pF Notes 1. Sampled, not 100% tested. 2. Test conditions TA = 25C, f = 1.0 MHz. 23.2 TSOP Pin Capacitance Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 10 10.5 pF COUT Output Capacitance VOUT = 0 5.5 6.5 pF CIN2 Control Pin Capacitance VIN = 0 8 10 pF CIN3 WP#/ACC Pin Capacitance VIN = 0 9.5 10 pF Notes 1. Sampled, not 100% tested. 2. Test conditions TA = 25C, f = 1.0 MHz. Document Number: 002-00615 Rev. *B Page 93 of 101 S29PL-J 24. Physical Dimensions 24.1 VBG080--80-Ball Fine-pitch Ball Grid Array 8 x 11 mm Package (PL127J) 0.05 C (2X) D D1 A e 8 e 7 7 SE 6 5 E1 E 4 3 2 1 M L K J H G F E D C B A INDEX MARK PIN A1 CORNER A1 CORNER B 10 6 SD NXb 0.05 C (2X) 7 0.08 M C 0.15 M C A B TOP VIEW BOTTOM VIEW 0.10 C A2 A A1 C 0.08 C SEATING PLANE SIDE VIEW NOTES: PACKAGE VBG 080 JEDEC 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. N/A 2. ALL DIMENSIONS ARE IN MILLIMETERS. 11.00 mm x 8.00 mm NOM PACKAGE SYMBOL MIN NOM MAX A --- --- 1.00 A1 0.18 --- --- A2 0.62 --- 0.76 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). NOTE OVERALL THICKNESS BALL HEIGHT 11.00 BSC. BODY SIZE E 8.00 BSC. BODY SIZE D1 8.80 BSC. BALL FOOTPRINT E1 5.60 BSC. MD 12 ROW MATRIX SIZE D DIRECTION ME 8 ROW MATRIX SIZE E DIRECTION N 80 TOTAL BALL COUNT 0.33 --- BALL FOOTPRINT 0.43 BALL DIAMETER e 0.80 BSC. BALL PITCH SD / SE 0.40 BSC. SOLDER BALL PLACEMENT (A3-A6,B3-B6,L3-L6,M3-M6) DEPOPULATED SOLDER BALLS e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. BODY THICKNESS D b 4. N IS THE TOTAL NUMBER OF SOLDER BALLS. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3329 \ 16-038.25b Document Number: 002-00615 Rev. *B Page 94 of 101 S29PL-J 24.2 VBH064--64-Ball Fine-pitch Ball Grid Array 8 x 11.6 mm package (PL127J) 0.05 C (2X) D D1 A e 10 9 e 7 8 SE 7 6 E1 E 5 4 3 2 1 M A1 CORNER INDEX MARK L K B 10 H G F E SD 6 0.05 C (2X) J D C B A A1 CORNER 7 NXb 0.08 M C TOP VIEW 0.15 M C A B BOTTOM VIEW 0.10 C A2 A A1 C 0.08 C SEATING PLANE SIDE VIEW NOTES: PACKAGE VBH 064 JEDEC 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. N/A 2. ALL DIMENSIONS ARE IN MILLIMETERS. 11.60 mm x 8.00 mm NOM PACKAGE SYMBOL MIN NOM MAX A --- --- 1.00 A1 0.18 --- --- A2 0.62 --- 0.76 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). NOTE OVERALL THICKNESS BALL HEIGHT 11.60 BSC. BODY SIZE E 8.00 BSC. BODY SIZE 8.80 BSC. BALL FOOTPRINT E1 7.20 BSC. MD 12 ROW MATRIX SIZE D DIRECTION ME 10 ROW MATRIX SIZE E DIRECTION N 64 b 0.33 --- BALL FOOTPRINT TOTAL BALL COUNT 0.43 BALL DIAMETER e 0.80 BSC. BALL PITCH SD / SE 0.40 BSC. SOLDER BALL PLACEMENT (A2-9,B1-4,B7-10,C1-K1, M2-9,C10-K10,L1-4,L7-10, G5-6,F5-6) DEPOPULATED SOLDER BALLS e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. BODY THICKNESS D D1 4. N IS THE TOTAL NUMBER OF SOLDER BALLS. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3330 \ 16-038.25b Document Number: 002-00615 Rev. *B Page 95 of 101 S29PL-J 24.3 VBK048--48-Ball Fine-pitch Ball Grid Array 8.15 x 6.15 mm package (PL032J and PL064J) 0.10 D (4X) D1 A 6 5 7 e 4 E SE E1 3 2 1 H PIN A1 CORNER INDEX MARK 6 B 10 G F b E D C SD B A A1 CORNER 7 0.08 M C TOP VIEW 0.15 M C A B BOTTOM VIEW 0.10 C A2 A SEATING PLANE A1 C 0.08 C SIDE VIEW NOTES: PACKAGE VBK 048 JEDEC 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. N/A 2. ALL DIMENSIONS ARE IN MILLIMETERS. 8.15 mm x 6.15 mm NOM PACKAGE SYMBOL MIN NOM MAX A --- --- 1.00 A1 0.18 --- --- A2 0.62 --- 0.76 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). NOTE OVERALL THICKNESS BALL HEIGHT 8.15 BSC. BODY SIZE E 6.15 BSC. BODY SIZE D1 5.60 BSC. BALL FOOTPRINT E1 4.00 BSC. BALL FOOTPRINT MD 8 ROW MATRIX SIZE D DIRECTION ME 6 ROW MATRIX SIZE E DIRECTION N 48 TOTAL BALL COUNT 0.33 --- 0.43 BALL DIAMETER e 0.80 BSC. BALL PITCH SD / SE 0.40 BSC. SOLDER BALL PLACEMENT --- DEPOPULATED SOLDER BALLS e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. BODY THICKNESS D b 4. N IS THE TOTAL NUMBER OF SOLDER BALLS. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3338 \ 16-038.25b Document Number: 002-00615 Rev. *B Page 96 of 101 S29PL-J 24.4 VBU056--56-Ball Fine-pitch BGA 7 x 9mm package (PL064J and PL032J) A D D1 e 0.05 C (2X) 8 7 SE 7 6 5 E E1 4 3 e 2 1 H 10 A1 CORNER INDEX MARK B TOP VIEW G F E D C B A A1 CORNER 6 SD NXb 7 0.08 M C 0.05 C 0.15 M C A B (2X) BOTTOM VIEW 0.10 C A2 A A1 SEATING PLANE C 0.08 C SIDE VIEW NOTES: PACKAGE VBU 056 JEDEC 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. N/A 2. ALL DIMENSIONS ARE IN MILLIMETERS. 9.00 mm x 7.00 mm NOM PACKAGE SYMBOL MIN NOM MAX A --- --- 1.00 A1 0.17 --- --- A2 0.62 --- 0.76 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). NOTE OVERALL THICKNESS BALL HEIGHT 9.00 BSC. BODY SIZE E 7.00 BSC. BODY SIZE D1 5.60 BSC. BALL FOOTPRINT E1 5.60 BSC. MD 8 ROW MATRIX SIZE D DIRECTION ME 8 ROW MATRIX SIZE E DIRECTION N 56 TOTAL BALL COUNT 0.35 0.40 BALL FOOTPRINT 0.45 BALL DIAMETER e 0.80 BSC. BALL PITCH SD / SE 0.40 BSC. SOLDER BALL PLACEMENT A1,A8,D4,D5,E4,E5,H1,H8 DEPOPULATED SOLDER BALLS e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. BODY THICKNESS D b 4. N IS THE TOTAL NUMBER OF SOLDER BALLS. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3440\ 16-038.25 \ 01.13.05 Document Number: 002-00615 Rev. *B Page 97 of 101 S29PL-J 24.5 TS056--20 x 14 mm, 56-pin TSOP (PL127J) STANDARD PIN OUT (TOP VIEW) A2 2 0.10 C 1 N SEE DETAIL B -A- -BE 5 e N +1 2 N 2 D1 D 5 A1 4 C SEATING PLANE B A 0.08MM (0.0031") M C A-B S B SEE DETAIL A b 6 7 WITH PLATING 7 (c) c1 b1 BASE METAL R c e/2 SECTION B-B GAGE LINE 0.25MM (0.0098") BSC 0 -X- PARALLEL TO SEATING PLANE L X = A OR B DETAIL A Package TS 056 Jedec MO-142 (B) EC Symbol A A1 A2 b1 b c1 c D D1 E e L 0 R N MIN NOM MAX 1.20 0.15 0.05 1.00 0.95 1.05 0.20 0.23 0.17 0.22 0.17 0.27 0.10 0.16 0.10 0.21 19.80 20.00 20.20 18.30 18.40 18.50 13.90 14.00 14.10 0.50 BASIC 0.50 0.70 0.60 3 0 5 0.08 0.20 56 DETAIL B NOTES: 1 CONTROLLING DIMENSIONS ARE IN MILLIMETERS (MM). (DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982) 2 PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP). 3 PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK. 4 TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE. 5 DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS 0.15MM (.0059") PER SIDE. 6 DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE 0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028"). 7 THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND 0.25MM (0.0098") FROM THE LEAD TIP. 8 LEAD COPLANARITY SHALL BE WITHIN 0.10MM (0.004") AS MEASURED FROM THE SEATING PLANE. 9 DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS. Document Number: 002-00615 Rev. *B Page 98 of 101 S29PL-J 25. Revision Summary Document History Page Document Title: S29PL-J 128-/128-/64-/32-Mbit (8/8/4/2M x 16-Bit) 3V, Flash with Enhanced VersatileIOTM Document Number: 002-00615 Rev. ** ECN No. Orig. of Change RYSU Submission Date Description of Change Initial release Included backward compatibility with MBM29xx families. 48-ball BGA package is not supported and was removed. Model numbers for the 48-ball BGA configurations were removed. An illustration was added to show the pin-out configuration. Added the description of 01h for address 4Fh and removed the 0004 data. Provided the time units of measure for the erase and programming performances. Corrected typo in device ID. Added 3V VIO for PL064J and PL032J devices. Corrected the voltage rating, ball configuration, and physical dimensions for model numbers 12 and 13. Removed the 64-ball, 8x9 mm diagram. Clarified the supply voltages that apply to the PL127J/PL129J and all other PLxxxJ products. Added information applicable to the CIN3 symbol. Removed the 9x8 mm package drawing. Added the 56-ball 7x9 mm pinout diagram. Updated to include the 8 x 6 mm, 48-ball Fine pitch BGA and 7 x 9 mm, 56-ball Fine-pitch BGA options. 01/29/2004 to Added the VBK048 package drawing. 04/18/2013 Changed names. Updated specs in this table. Updated the Model Number offerings. Corrected the Package Markings for the 64-ball FBGA packages. Added combinations for the TLC056 package on the PL064J and PL032J devices. Valid Combinations for BGA Packages (128Mb) Package Options Added the 7 x 9mm 56-ball package. 56-ball connection diagram Notes 1 and 2 corrected to reflect accurate temperature ranges and cycling. Updated the Model Number offerings Updated the Package Types information. Figure 6, In-System Sector Protection/Sector Unprotection Algorithms Program Suspend/Program Resume Commands New section added. Made global changes to include program suspend/resume commands. Added Erase Suspend Latency. Updated table and added a notes section. Added the VBU056 package Document Number: 002-00615 Rev. *B Page 99 of 101 S29PL-J Document History Page (Continued) Document Title: S29PL-J 128-/128-/64-/32-Mbit (8/8/4/2M x 16-Bit) 3V, Flash with Enhanced VersatileIOTM Document Number: 002-00615 Rev. ECN No. Orig. of Change Submission Date Description of Change Added note: When Polling the SecSi indicator bit the A21 to A12 should be set within the address range 004000h-03FFFFh. Added sentence: Once the Enter Secured Silicon Sector Command sequence has been entered, the standard array cannot be accessed until the Exit Secured Silicon Sector command has been entered or the device has been reset. Added note 16: Once the Secured Silicon Sector Entry Command sequence has been entered, the standard array cannot be accessed until the Exit Secured Silicon Sector command has been entered or the device has been reset. Content the same, tables consolidated to match Ordering Information Descriptions Consolidated Special Package Handling Instructions and put the information before the package/pinout descriptions. Added Figure numbers to the connection diagram graphics. Updated operating temperatures. Updated VOH parameter. Added tESL parameter Updated the product that uses this package from PL127J to PL064J and PL032J 64-Ball Fine-Pitch BGA--MCP Compatible--PL127JChanged ball F9 to A22 Pin DescriptionCorrected WP#/ACC description. GlobalChanged data sheet status from Advanced Information to Full Production Ordering InformationModified/Added note to the Valid Combinations to be Supported for this Device tables 01/29/2004 to VCC Ramp RateRemoved Section Connection DiagramCorrected 64-Ball Fine-Pitch BGA ball description (H9 and L5) 04/18/2013 Ordering InformationUnder Package Type, changed wording of "Lead (Pb)-free compliant" material type to "Standard". GlobalRemoved 55 ns as a valid speed supported by PL127J. Product Selector GuideCorrected the 55 ns Speed Option's Max Page Access and Max OE# Access time from 2 to 20 ns. Corrected the 65 ns Speed Option's Max Access and Max CE# Access time from 25 to 65 ns. Dynamic Protection Bit (DYB)Corrected reference to Table 17 to Table 10.15. Erase Suspend/Erase Resume CommandsCorrected "This command is valid only during the sector erase operation, including the 80 s time-out period..." to "This command is valid only during the sector erase operation, including the 50 s time-out period...". Command Definitions TablesIn Table 15.2, corrected the value of the third bus cycle of the "PPB Status", "PPB Lock Bit Status" and "DYB Status" commands from 555 to BA+555. Absolute Maximum RatingsCorrected the A9, OE# and RESET# "Voltage with Respect to Ground" maximum range value from +13.0V to +12.5V. DQ6: Toggle Bit ICorrected Figure 16.2: Toggle Bit Algorithm. Pin CapacitanceAdded TSOP package pin capacitance values. Ordering InformationFor model number 13, corrected "56-ball" TSOP package description to "56-pin". GlobalChanged 65 ns and 70 ns initial access time for VIO=1.8V to 80 ns. ** (cont'd) RYSU *A 4959015 RYSU 10/13/2015 Updated to Cypress template *B 5398456 NFB 08/10/2016 Ordering Information: Added 1.8V VIO TSOP package Valid Combinations to be Supported for this Device: Added 14 to Additional Ordering Options. Document Number: 002-00615 Rev. *B Page 100 of 101 S29PL-J Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer's representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC(R)Solutions Products ARM(R) Cortex(R) Microcontrollers cypress.com/arm Automotive cypress.com/automotive Clocks & Buffers cypress.com/clocks Interface PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP Cypress Developer Community Forums | Projects | Video | Blogs | Training | Components cypress.com/interface Lighting & Power Control cypress.com/powerpsoc Memory cypress.com/memory PSoC Technical Support cypress.com/support cypress.com/psoc Touch Sensing cypress.com/touch USB Controllers cypress.com/usb Wireless/RF cypress.com/wireless (c) Cypress Semiconductor Corporation 2004-2016. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document, including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries worldwide. 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