BC869T/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2003 Dec 02 2004 Nov 08

DISCRETE SEMICONDUCTORS

BC869

PNP medium power transistor;

20 V, 1 A

ook, halfpage

M3D109

2004 Nov 08 2

NXP Semiconductors Product data sheet

PNP medium power transistor;

20 V, 1 A BC869

FEATURES

•High current

•Three current gain selections

•1.2 W total power dissipation.

APPLICATIONS

•Linear voltage regulators

•High side switch

•Supply line switch

•MOSFET driver

•Audio (pre-) amplifier.

QUICK REFERENCE DATA

DESCRIPTION

PNP medium power transistor (see “Simplified outline,

symbol and pinning” for pac kage details).

SYMBOL PARAMETER MIN. MAX. UNIT

VCEO collector-emitter

voltage − −20 V

ICcollector current (DC) − −1 A

ICM peak collector current − −2 A

hFE DC current gain

BC869 85 375 −

BC869-16 100 250 −

BC869-25 160 375 −

PRODUCT OVERVIEW

TYPE NUMBER PACKAGE MARKING

PHILIPS EIAJ

BC869 SOT89 SC-62 CEC

BC869-16 SOT89 SC-62 CGC

BC869-25 SOT89 SC-62 CHC

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING

PIN DESCRIPTION

BC869 1emitter

2collector

3base

321 sym07

2004 Nov 08 3

NXP Semiconductors Pr oduct data sheet

PNP medium power transistor;

20 V, 1 A BC869

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Refer to SOT89 standard mounting conditions.

2. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated footprint.

3. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated , mounting pad for collector 1 cm2.

4. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated , mounting pad for collector 6 cm2.

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BC869 SC-62 plastic surface mounted p ackage; collect o r pad for good hea t

transfer; 3 leads SOT89

BC869-16

BC869-25

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter − −32 V

VCEO collector-emitter voltage open base − −20 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −1 A

ICM peak collector current − −2 A

IBM peak base current − −200 mA

Ptot total power dissipation Tamb ≤ 25 °C

notes 1 and 2 −0.5 W

notes 1 and 3 −0.85 W

notes 1 and 4 −1.2 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

2004 Nov 08 4

NXP Semiconductors Pr oduct data sheet

PNP medium power transistor;

20 V, 1 A BC869

handbook, halfpage

-65 -5 Tamb (°C)

Ptot

(W)

(1)

(2)

(3)

175

1.6

1.2

0.4

0.8

115

MLE323

Fig.1 Power derating curves.

(1) FR4 PCB; 6 cm2 mounting pad for collector.

(2) FR4 PCB; 1 cm2 mounting pad for collector.

(3) Standard footprint.

THERMAL CHARACTE RISTICS

Notes

1. Refer to SOT89 standard mounting conditions.

2. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated footprint.

3. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated , mounting pad for collector 1 cm2.

4. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated , mounting pad for collector 6 cm2.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C

notes 1 and 2 250 K/W

notes 1 and 3 147 K/W

notes 1 and 4 104 K/W

Rth(j-s) thermal resistance from junction to solder point Tamb ≤ 25 °C20 K/W

2004 Nov 08 5

NXP Semiconductors Pr oduct data sheet

PNP medium power transistor;

20 V, 1 A BC869

handbook, full pagewidth

103

102

10−1

10−510−410−310−210−11

Zth

(K/W)

tp (s)

10 102103

MLE324

δ =

(10)

(9)

(8)

(7)

(6)

(5)

(4)

(3)

(2)

(1)

Fig.2 Transient thermal impeda nc e as a function of pulse time; typical values.

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on F R4 printed-c i rcuit board; mounting pad for collect or 1 cm2.

MLE321

3.5 m

2 mm

.8 mm

1.8 mm 1.1

0.7 mm 0.8 mm

3.7 mm

Fig.3 SOT89 standard moun ting conditions fo r

reflow soldering.

handbook, halfpage

MLE322

40 mm

32 mm

2.5 mm

10 mm

5 mm

1.6 mm

0.5 mm

1 mm

3.96 mm

10 mm

Fig.4 Printed-circuit board for SOT89; mounting

pad for collector 1 cm2.

2004 Nov 08 6

NXP Semiconductors Pr oduct data sheet

PNP medium power transistor;

20 V, 1 A BC869

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = −25 V; IE = 0 A −−−100 nA

VCB = −25 V; IE = 0 A −−−10 μA

IEBO emitter-base cu t-off current VEB = −5 V; IC = 0 A −−−100 nA

hFE DC current gain BC869

VCE = −10 V; IC = −5 mA 50 − −

VCE = −1 V; IC = −500 mA 85 −375

VCE = −1 V; IC = −1 A 60 − −

BC869−16

VCE = −1 V; IC = −500 mA 100 −250

BC869−25

VCE = −1 V; IC = −500 mA 160 −375

VCEsat collector-emitter saturation voltage IC = −1 A; IB = −100 mA −−−500 mV

VBE base-emitter vo ltage VCE = −10 V; IC = −5 mA −−−700 mV

VCE = −1 V; IC = −1 A −−−1 V

Cccollector capacitance IE = ie = 0 A; VCB = −10 V;

f = 1 MHz −28 −pF

fTtransition frequen c y VCE = −5 V; IC = −50 mA;

f = 100 MHz 40 140 −MHz

2004 Nov 08 7

NXP Semiconductors Pr oduct data sheet

PNP medium power transistor;

20 V, 1 A BC869

handbook, halfpage

(5)

(7)

(A)

VCE (V)

−2.4

−1.6

−0.8

0−1−5−2−3−4

MLE317

(8)

(6)

(4)

(2)

(1)

−2.0

−1.2

−0.4

(9)

(3)

(10)

Fig.5 Collector current as a function of

collector-emitter voltage; typical values.

BC869-16.

(1) IB = −18 mA.

(2) IB = −16.2 mA.

(3) IB = −14.4 mA.

(4) IB = −12.6 mA.

(5) IB = −10.8 mA.

(6) IB = −9.0 mA.

(7) IB = −7.2 mA.

(8) IB = −5.4 mA.

(9) IB = −3.6 mA.

(10) IB = −1.8 mA.

handbook, halfpage

−10−1

MLE314

−1

−10−4−10−3−10−2−10−1−1IC (A)

VBE

(V)

−10

Fig.6 Base-emitter voltage as a function of

collector current; typical values.

BC869-16.

VCE = −1 V.

handbook, halfpage

102

103MLE319

−10−4−10−3−10−2−10−1−1−10

IC (A)

hFE

Fig.7 DC current gain as a fu nction of collector

current; ty pical values.

BC869-16.

VCE = −1 V.

handbook, halfpage

MLE320

−1

−10−1

−10−2

−10−3

−10−4−10−3−10−2−10−1IC (A)

VCEsat

(V)

−1−10

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC869-16.

IC/IB = 10.

2004 Nov 08 8

NXP Semiconductors Pr oduct data sheet

PNP medium power transistor;

20 V, 1 A BC869

handbook, halfpage

(5)

(7)

(A)

VCE (V)

−2.4

−2.0

−1.6

−1.2

−0.8

−0.4

0−1−5

−2−3−4

MLE313

(8)

(10)

(6)

(9)

(2)

(1)

(4)

(3)

Fig.9 Collector current as a function of

collector-emitter voltage; typical values.

BC869-25.

(1) IB = −12 mA.

(2) IB = −10.8 mA.

(3) IB = −9.6 mA.

(4) IB = −8.4 mA.

(5) IB = −7.2 mA.

(6) IB = −6.0 mA.

(7) IB = −4.8 mA.

(8) IB = −3.6 mA.

(9) IB = −2.4 mA.

(10) IB = −1.2 mA.

handbook, halfpage

−10−1

−1MLE318

−10−4−10−3−10−2−10−1−1−10

IC (A)

VBE

(V)

Fig.10 Base-emitter voltage as function of collector

current; ty pical values.

BC869-25.

VCE = −1 V.

handbook, halfpage

102

103MLE315

−10−4−10−3−10−2−10−1−1−10

IC (mA)

hFE

Fig.11 DC current gain as a function of collector

current; ty pical values.

BC869-25.

VCE = −1 V.

handbook, halfpage

MLE316

−10−3

−10−2

−10−1

−1

−10−4−10−3−10−2−10−1IC (A)

VCEsat

(V)

−1−10

Fig.12 Collec to r-emitter saturation voltage as a

function of collector current; typical values.

BC869-25.

IC/IB = 10.

2004 Nov 08 9

NXP Semiconductors Pr oduct data sheet

PNP medium power transistor;

20 V, 1 A BC869

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 04-08-03

06-03-16

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Nov 08 10

NXP Semiconductors Pr oduct data sheet

PNP medium power transistor;

20 V, 1 A BC869

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product sta tus of device(s) described in this do cument may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Inter net at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

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specifications and product descriptions, at any time and

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any of these products are for illustrative purposes only.

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warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificati on .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the tech nical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/06/pp11 Date of release: 2004 Nov 08 Document orde r number: 9397 750 13861