DATA SH EET
Product data sheet
Supersedes data of 2003 Dec 02 2004 Nov 08
DISCRETE SEMICONDUCTORS
BC869
PNP medium power transistor;
20 V, 1 A
db
ook, halfpage
M3D109
2004 Nov 08 2
NXP Semiconductors Product data sheet
PNP medium power transistor;
20 V, 1 A BC869
FEATURES
High current
Three current gain selections
1.2 W total power dissipation.
APPLICATIONS
Linear voltage regulators
High side switch
Supply line switch
MOSFET driver
Audio (pre-) amplifier.
QUICK REFERENCE DATA
DESCRIPTION
PNP medium power transistor (see “Simplified outline,
symbol and pinning” for pac kage details).
SYMBOL PARAMETER MIN. MAX. UNIT
VCEO collector-emitter
voltage 20 V
ICcollector current (DC) 1 A
ICM peak collector current 2 A
hFE DC current gain
BC869 85 375
BC869-16 100 250
BC869-25 160 375
PRODUCT OVERVIEW
TYPE NUMBER PACKAGE MARKING
PHILIPS EIAJ
BC869 SOT89 SC-62 CEC
BC869-16 SOT89 SC-62 CGC
BC869-25 SOT89 SC-62 CHC
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING
PIN DESCRIPTION
BC869 1emitter
2collector
3base
321 sym07
9
1
2
3
2004 Nov 08 3
NXP Semiconductors Pr oduct data sheet
PNP medium power transistor;
20 V, 1 A BC869
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated , mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated , mounting pad for collector 6 cm2.
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BC869 SC-62 plastic surface mounted p ackage; collect o r pad for good hea t
transfer; 3 leads SOT89
BC869-16
BC869-25
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 32 V
VCEO collector-emitter voltage open base 20 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 1 A
ICM peak collector current 2 A
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C
notes 1 and 2 0.5 W
notes 1 and 3 0.85 W
notes 1 and 4 1.2 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb ambient temperature 65 +150 °C
2004 Nov 08 4
NXP Semiconductors Pr oduct data sheet
PNP medium power transistor;
20 V, 1 A BC869
handbook, halfpage
-65 -5 Tamb (°C)
Ptot
(W)
55
(1)
(2)
(3)
175
1.6
1.2
0.4
0
0.8
115
MLE323
Fig.1 Power derating curves.
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) Standard footprint.
THERMAL CHARACTE RISTICS
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated , mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-side d copper, tin-plated , mounting pad for collector 6 cm2.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient Tamb 25 °C
notes 1 and 2 250 K/W
notes 1 and 3 147 K/W
notes 1 and 4 104 K/W
Rth(j-s) thermal resistance from junction to solder point Tamb 25 °C20 K/W
2004 Nov 08 5
NXP Semiconductors Pr oduct data sheet
PNP medium power transistor;
20 V, 1 A BC869
handbook, full pagewidth
103
102
10
101
1
1051041031021011
Zth
(K/W)
tp (s)
10 102103
MLE324
tp
tp
T
P
t
T
δ =
(10)
(9)
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
Fig.2 Transient thermal impeda nc e as a function of pulse time; typical values.
(1) δ = 1.
(2) δ = 0.75. (3) δ = 0.5.
(4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05.
(8) δ = 0.02. (9) δ = 0.01.
(10) δ = 0.
Mounted on F R4 printed-c i rcuit board; mounting pad for collect or 1 cm2.
MLE321
3.5 m
m
2 mm
2
.8 mm
1.8 mm 1.1
mm
0.7 mm 0.8 mm
3.7 mm
Fig.3 SOT89 standard moun ting conditions fo r
reflow soldering.
handbook, halfpage
MLE322
40 mm
32 mm
2.5 mm
10 mm
5 mm
1.6 mm
0.5 mm
1 mm
3.96 mm
10 mm
Fig.4 Printed-circuit board for SOT89; mounting
pad for collector 1 cm2.
2004 Nov 08 6
NXP Semiconductors Pr oduct data sheet
PNP medium power transistor;
20 V, 1 A BC869
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 25 V; IE = 0 A −−−100 nA
VCB = 25 V; IE = 0 A −−−10 μA
IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 A −−−100 nA
hFE DC current gain BC869
VCE = 10 V; IC = 5 mA 50
VCE = 1 V; IC = 500 mA 85 375
VCE = 1 V; IC = 1 A 60
BC86916
VCE = 1 V; IC = 500 mA 100 250
BC86925
VCE = 1 V; IC = 500 mA 160 375
VCEsat collector-emitter saturation voltage IC = 1 A; IB = 100 mA −−−500 mV
VBE base-emitter vo ltage VCE = 10 V; IC = 5 mA −−−700 mV
VCE = 1 V; IC = 1 A −−−1 V
Cccollector capacitance IE = ie = 0 A; VCB = 10 V;
f = 1 MHz 28 pF
fTtransition frequen c y VCE = 5 V; IC = 50 mA;
f = 100 MHz 40 140 MHz
2004 Nov 08 7
NXP Semiconductors Pr oduct data sheet
PNP medium power transistor;
20 V, 1 A BC869
handbook, halfpage
0
(5)
(7)
IC
(A)
VCE (V)
2.4
1.6
0.8
015234
MLE317
(8)
(6)
(4)
(2)
(1)
2.0
1.2
0.4
(9)
(3)
(10)
Fig.5 Collector current as a function of
collector-emitter voltage; typical values.
BC869-16.
(1) IB = 18 mA.
(2) IB = 16.2 mA.
(3) IB = 14.4 mA.
(4) IB = 12.6 mA.
(5) IB = 10.8 mA.
(6) IB = 9.0 mA.
(7) IB = 7.2 mA.
(8) IB = 5.4 mA.
(9) IB = 3.6 mA.
(10) IB = 1.8 mA.
handbook, halfpage
101
MLE314
1
1041031021011IC (A)
VBE
(V)
10
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
BC869-16.
VCE = 1 V.
handbook, halfpage
102
103MLE319
104103102101110
IC (A)
hFE
Fig.7 DC current gain as a fu nction of collector
current; ty pical values.
BC869-16.
VCE = 1 V.
handbook, halfpage
MLE320
1
101
102
103
104103102101IC (A)
VCEsat
(V)
110
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
BC869-16.
IC/IB = 10.
2004 Nov 08 8
NXP Semiconductors Pr oduct data sheet
PNP medium power transistor;
20 V, 1 A BC869
handbook, halfpage
0
(5)
(7)
IC
(A)
VCE (V)
2.4
2.0
1.6
1.2
0.8
0.4
015
234
MLE313
(8)
(10)
(6)
(9)
(2)
(1)
(4)
(3)
Fig.9 Collector current as a function of
collector-emitter voltage; typical values.
BC869-25.
(1) IB = 12 mA.
(2) IB = 10.8 mA.
(3) IB = 9.6 mA.
(4) IB = 8.4 mA.
(5) IB = 7.2 mA.
(6) IB = 6.0 mA.
(7) IB = 4.8 mA.
(8) IB = 3.6 mA.
(9) IB = 2.4 mA.
(10) IB = 1.2 mA.
handbook, halfpage
101
1MLE318
104103102101110
IC (A)
VBE
(V)
Fig.10 Base-emitter voltage as function of collector
current; ty pical values.
BC869-25.
VCE = 1 V.
handbook, halfpage
102
103MLE315
104103102101110
IC (mA)
hFE
Fig.11 DC current gain as a function of collector
current; ty pical values.
BC869-25.
VCE = 1 V.
handbook, halfpage
MLE316
103
102
101
1
104103102101IC (A)
VCEsat
(V)
110
Fig.12 Collec to r-emitter saturation voltage as a
function of collector current; typical values.
BC869-25.
IC/IB = 10.
2004 Nov 08 9
NXP Semiconductors Pr oduct data sheet
PNP medium power transistor;
20 V, 1 A BC869
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 04-08-03
06-03-16
wM
e1
e
EHE
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
9
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
2004 Nov 08 10
NXP Semiconductors Pr oduct data sheet
PNP medium power transistor;
20 V, 1 A BC869
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or co mpleting a design.
2. The product sta tus of device(s) described in this do cument may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Inter net at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t specification.
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does not give any representations or warranties,
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reserves the right to make changes to information
published in this doc ument, including without limitation
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the tech nical content, except for package outline
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Printed in The Netherlands R75/06/pp11 Date of release: 2004 Nov 08 Document orde r number: 9397 750 13861