SM6G45, SM6J45, SM6G45A, SM6J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45, SM6J45, SM6G45A, SM6J45A AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off-State Voltage: VDRM = 400V, 600V z R.M.S On-State Current: IT (RMS) = 6A z High Commutating (dv / dt) ABSOLUTE MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage SM6G45 SM6G45A SM6J45 SM6J45A SYMBOL V 600 IT (RMS) Peak One Cycle Surge On-State Current (Non-Repetitive) ITSM 2 UNIT 400 VDRM R.M.S On-State Current (Full Sine Waveform Tc = 104C) I t Limit Value RATING 2 6 60 (50Hz) 66 (60Hz) A A 2 I t 18 A s Critical Rate of Rise of On-State Current di / dt 50 A / s Peak Gate Power Dissipation PGM 5 W TOSHIBA PG (AV) 0.5 W Weight: 2.0 g (typ.) Peak Gate Voltage VGM 10 V Peak Gate Current IGM 2 A Tj -40~125 C Tstg -40~125 C Average Gate Power Dissipation Junction Temperature Storage Temperature Range JEDEC TO-220AB JEITA 13-10G1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-10-27 SM6G45, SM6J45, SM6G45A, SM6J45A ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL Repetitive Peak Off-State Current IDRM SM6G45 SM6J45 Gate Trigger Voltage Gate Trigger Current MAX UNIT 2 mA 2 II T2 (+), Gate (-) 2 III T2 (-), Gate (-) 2 T2 (-), Gate (+) T2 (+), Gate (+) 1.5 II T2 (+), Gate (-) 1.5 III T2 (-), Gate (-) 1.5 IV T2 (-), Gate (+) VGT VD = 12V RL = 20 I T2 (+), Gate (+) 30 II T2 (+), Gate (-) 30 III T2 (-), Gate (-) 30 T2 (-), Gate (+) T2 (+), Gate (+) 20 T2 (+), Gate (-) 20 III T2 (-), Gate (-) 20 IV T2 (-), Gate (+) IV I IGT VD = 12V RL = 20 II SM6G45A SM6J45A TYP. T2 (+), Gate (+) I SM6G45 SM6J45 VDRM = Rated, Tj = 125C MIN I IV SM6G45A SM6J45A TEST CONDITION V mA Peak On-State Voltage VTM ITM = 9A 1.5 V Gate Non-Trigger Voltage VGD VD = Rated, Tc = 125C 0.2 V Holding Current IH Thermal Resistance Critical Rate of Rise of Off- State Voltage at Commutation SM6G45 SM6J45 SM6G45A SM6J45A VD = 12V, ITM = 1A 50 mA Rth (j-c) Junction to Case, AC 2.5 C / W VDRM = 400V, (di / dt) c = -3.3A / ms Tj = 125C 10 (dv / dt) c 4 V / s MARKING *1 M6G45 Characteristics indicator*2 Part No. (or abbreviation code) *1 Lot No. *2 Part No. (or abbreviation code) Part No. M6G45 SM6G45, SM6G45A M6J45 SM6J45, SM6J45A Nothing SM6G45, SM6J45 A SM6G45A, SM6J45A A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-10-27 SM6G45, SM6J45, SM6G45A, SM6J45A 3 2006-10-27 SM6G45, SM6J45, SM6G45A, SM6J45A 4 2006-10-27 SM6G45, SM6J45, SM6G45A, SM6J45A RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2006-10-27