SM6G45, SM6J45, SM6G45A, SM6J45A
2006-10-27
1
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM6G45, SM6J45, SM6G45A, SM6J45A
AC POWER CONTROL APPLICATIONS
z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V
z R.M.S On−State Current: IT (RMS) = 6A
z High Commutating (dv / dt)
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
SM6G45
SM6G45A 400
Repetitive Peak Off−
State Voltage SM6J45
SM6J45A
VDRM
600
V
R.M.S On−State Current
(Full Sine Waveform Tc = 104°C) IT (RMS) 6 A
60 (50Hz)
Peak One Cycle Surge On−State
Current (Non−Repetitive) ITSM 66 (60Hz)
A
I2t Limit Value I2t 18 A2s
Critical Rate of Rise of On−State
Current di / dt 50 A / µs
Peak Gate Power Dissipation PGM 5 W
Average Gate Power Dissipation PG (AV) 0.5 W
Peak Gate Voltage VGM 10 V
Peak Gate Current IGM 2 A
Junction Temperature Tj −40~125 °C
Storage Temperature Range Tstg −40~125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC TO-220AB
JEITA ―
TOSHIBA 13-10G1A
Weight: 2.0 g (typ.)
SM6G45, SM6J45, SM6G45A, SM6J45A
2006-10-27
2
ELECTRI CAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
Repetitive Peak Off−State
Current IDRM VDRM = Rated, Tj = 125°C ― ― 2 mA
I T2 (+), Gate (+) ― ― 2
II T2 (+), Gate (−) ― ― 2
III T2 (−), Gate (−) ― ― 2
SM6G45
SM6J45
IV T2 (−), Gate (+) ― ― ―
I T2 (+), Gate (+) ― ― 1.5
II T2 (+), Gate (−) ― ― 1.5
III T2 (−), Gate (−) ― ― 1.5
Gate
Trigger
Voltage
SM6G45A
SM6J45A
IV
VGT VD = 12V
RL = 20Ω
T2 (−), Gate (+) ― ― ―
V
I T2 (+), Gate (+) ― ― 30
II T2 (+), Gate (−) ― ― 30
III T2 (−), Gate (−) ― ― 30
SM6G45
SM6J45
IV T2 (−), Gate (+) ― ― ―
I T2 (+), Gate (+) ― ― 20
II T2 (+), Gate (−) ― ― 20
III T2 (−), Gate (−) ― ― 20
Gate
Trigger
Current
SM6G45A
SM6J45A
IV
IGT VD = 12V
RL = 20Ω
T2 (−), Gate (+) ― ― ―
mA
Peak On−State Voltage VTM I
TM = 9A ― ― 1.5 V
Gate Non−Trigger Voltage VGD V
D = Rated, Tc = 125°C 0.2 ― ― V
Holding Current IH V
D = 12V, ITM = 1A ― ― 50 mA
Thermal Resistance Rth (j−c) Junction to Case, AC ― ― 2.5 °C / W
SM6G45
SM6J45 10 ― ―
Critical Rate of
Rise of Off−
State Voltage
at
Commutation
SM6G45A
SM6J45A
(dv / dt) c
VDRM = 400V,
(di / dt) c = −3.3A / ms
Tj = 125°C 4 ― ―
V / µs
MARKING
Part No.
(or abbreviation code) Part No.
M6G45 SM6G45, SM6G45A
*1
M6J45 SM6J45, SM6J45A
Nothing SM6G45, SM6J45
*2
A SM6G45A, SM6J45A
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
M6G45
Characteristics
indicator*2
Part No. (or abbreviation code) *1
SM6G45, SM6J45, SM6G45A, SM6J45A
2006-10-27
3
SM6G45, SM6J45, SM6G45A, SM6J45A
2006-10-27
4
SM6G45, SM6J45, SM6G45A, SM6J45A
2006-10-27
5
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
