© Semiconductor Components Industries, LLC, 2013
August, 2020 − Rev. 1
1Publication Order Number:
FFSB20120A−F085/D
Silicon Carbide Schottky
Diode
1200 V, 20 A
FFSB20120A-F085
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
•Max Junction Temperature 175°C
•Avalanche Rated 200 mJ
•High Surge Current Capacity
•Positive Temperature Coefficient
•Ease of Paralleling
•No Reverse Recovery/No Forward Recovery
•AEC−Q101 qualified
Applications
•Automotive HEV−EV Onboard Chargers
•Automotive HEV−EV DC−DC Converters
See detailed ordering and shipping information on page 2
of this data sheet.
ORDERING INFORMATION
www.onsemi.com
Schottky Diode
1.,3. Cathode 2. Anode
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSB20120A = Specific Device Code
D2PAK2 (TO−263−2L)
CASE 418BK
MARKING DIAGRAM
$Y&Z&3&K
FFSB
20120A
1
2
3
FFSB20120A−F085
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit
VRRM Peak Repetitive Reverse Voltage 1200 V
EAS Single Pulse Avalanche Energy (Note 1) 200 mJ
IFContinuous Rectified Forward Current @ TC < 157°C20 A
Continuous Rectified Forward Current @ TC < 135°C32
IF, Max Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms1190 A
TC = 150°C, 10 ms990
IF, SM Non−Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 135 A
IF, RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 74 A
Ptot Power Dissipation TC = 25°C333 W
TC = 150°C55 W
TJ, TSTG Operating and Storage Temperature Range −55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol Parameter Ratings Unit
RqJC Thermal Resistance, Junction to Case, Max 0.45 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package Shipping
†
FFSB20120A−F085 FFSB20120A D2PAK 800 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ. Max. Unit
VFForward Voltage IF = 20 A, TC = 25°C−1.45 1.75 V
IF = 20 A, TC = 125°C−1.7 2
IF = 20 A, TC = 175°C−2 2.4
IRReverse Current VR = 1200 V, TC = 25°C− − 200 mA
VR = 1200 V, TC = 125°C− − 300
VR = 1200 V, TC = 175°C− − 400
QCTotal Capacitive Charge V = 800 V −120 −nC
CTotal Capacitance VR = 1 V, f = 100 kHz −1220 −pF
VR = 400 V, f = 100 kHz −111 −
VR = 800 V, f = 100 kHz −88 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. EAS of 200 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 29 A, V = 50 V.
FFSB20120A−F085
www.onsemi.com
3
Figure 1. Forward Characteristics
200
010−3
Figure 2. Reverse Characteristics
Figure 3. Current Derating
TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
4
8
12
16
20
0.0
TJ = −55°C
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
IF
, FORWARD CURRENT (A)
VF
, FORWARD VOLTAGE (V)
400 600 800 1000 1200
10−2
10−1
100
101
IR, REVERSE CURRENT (mA)
VR, REVERSE VOLTAGE (V)
TJ = −55°C
50
0
100
250
25 50 75 100
TC, CASE TEMPERATURE (5C)
IP
, PEAK FORWARD CURRENT (A)
D = 0.2 D = 0.3
D = 0.5
D = 0.7
125 150 175
100
50
0
200
150
25 50 75 100
TC, CASE TEMPERATURE (5C)
PTOT
, POWER DISSIPATION (W)
125 150 175
300
Figure 4. Power Derating
50
25
0
75
100
0 200
VR, REVERSE VOLTAGE (V)
QC, CAPACITIVE CHARGE (nC)
Figure 5. Capacitive Charge vs. Reverse Voltage
400 600 800 1000
5000
1000
100
50
0.1 1 10 100 1000
VR, REVERSE VOLTAGE (V)
CAPACITIANCE (pF)
Figure 6. Capacitive Charge vs. Reverse Voltage
0.5 1.0 1.5 2.0 2.5 3.0
TJ = 175°C
TJ = 125°C
TJ = 75°C
TJ = 25°C
D = 0.1
D = 1
150
200
250
350
125
150
FFSB20120A−F085
www.onsemi.com
4
0 200 800
VR, REVERSE VOLTAGE (V)
EC, CAPACITIVE ENERGY (mJ)
Figure 7. Capacitance Stored Energy
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
10−610−510−410−310−2
0.0001
0
10
TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued)
30
400 600 1000
DUTY CYCLE − DESCENDING ORDER
10−11
0.001
1
2
NOTES:
ZqJC (t) = r(t) ×RqJC
RqJC = 0.45°C/W
PEAK TJ = PDM ×ZqJC (t) + TC
Duty cycle, D = t1/t2
20
50
40
PDM
t1
t2
SINGLE PULSE
0.5
0.0
1
0.1
0.2
0.1
0.05
0.02
0.01
TEST CIRCUIT AND WAVEFORMS
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
LR
+
−
DUT
CURRENT
SENSE VDD
VDD
Q1
IV
VAVL
tt0t1t2
IL
IL
L = 0.5 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
D2PAK2 (TO−263−2L)
CASE 418BK
ISSUE O DATE 02 AUG 201
8
XXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
XXXXXXXXG
AYWW
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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