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PTB 20230
45 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
20230
LOT CODE
0
10
20
30
40
50
60
70
0246810
Input Power (Watts)
Output Power (Watts)
VCC = 26 V
ICQ = 250 mA
f = 2.0 GHz
Typical Output Pow er vs. Input Pow er
Package 20234
Description
The 20230 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts
minimum output power for PEP applications, it is specifically intended
for operation as a final or driver stage in CDMA or TDMA systems.
Ion implantation, nitride surface passivation and gold metallization
ensure excellent device reliability. 100% lot traceability is standard.
45 Watts, 1.8–2.0 GHz
Class AB Characteristics
45% Collector Efficiency at 45 Watts
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCER 55 Vdc
Collector-Base Voltage VCBO 55 Vdc
Emitter-Base Voltage (collector open) VEBO 4.0 Vdc
Collector Current (continuous) IC7.7 Adc
Total Device Dissipation at Tflange = 25° C PD200 Watts
Above 25°C derate by 1.2 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (Tflange = 70° C) RθJC 0.85 °C/W
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PTB 20230
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7
8
9
10
11
12
1750 1800 1850 1900 1950 2000 2050
Frequency (MHz)
Gain
20
30
40
50
60
70
Output Power & Efficiency
VCC = 26 V
ICQ = 250 mA
POUT, G ain & Efficiency (at P-1dB) vs. Frequency
Output P o wer (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
4
8
12
16
20
1900 1925 1950 1975 2000
Frequency (MHz)
Gain (dB)
0
10
20
30
40
50
60
VCC = 26 V
ICQ = 250 mA
POUT = 45 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Efficiency (%
)
Return Loss (dB
)
- 5
-15
-25
-35
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 — — Volts
Breakdown Voltage C to E IB = 0 A, IC = 100 mA, RBE = 22 ΩV(BR)CER 55 — — Volts
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4.0 5.0 — Volts
DC Current Gain VCE = 5 V, IC = 1 A hFE 20 40 — —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, f = 2 GHz) Gpe 8.5 9.5 — dB
Gain Compression
(VCC = 26 Vdc, ICQ = 250 mA, f = 2 GHz) P-1dB 45 — — Watts
Input Return Loss
(VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, f = 2 GHz) Rtn Loss 10 — — dB
Collector Efficiency
(VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, f = 2 GHz) ηC45 50 — %
Load Mismatch Tolerance
(VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, Ψ— — 3:1 —
f = 2 GHz—all phase angles at frequency of test)
Typical Performance
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PTB 20230
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Z Source Z Load
Frequency Z Source Z Load
GHz R jX R jX
1.75 3.36 -5.20 3.20 -3.10
1.80 3.57 -5.70 3.00 -2.80
1.85 5.14 -5.55 2.90 -2.50
1.90 6.60 -5.40 2.77 -2.10
1.95 8.00 -3.80 2.75 -1.80
2.00 8.95 -1.50 2.80 -1.40
2.05 7.72 0.00 2.95 -1.00
Power Gain vs. Out put Power
7
8
9
10
11
0 1 10 100
Output Power (Watts)
Power Gain (d B)
VCC = 26 V
f = 2.0 GHz
ICQ = 250 m A
ICQ = 125 m A
ICQ = 65 m A
Output Power vs. Supply Volt age
40
45
50
55
60
65
70
22 23 24 25 26 27
Supply Voltage (Volts)
Output Power (Watts)
ICQ = 250 mA
f = 2.0 GHz
-70
-60
-50
-40
-30
-20
10 20 30 40 50 60
Output Power (Watts-PEP)
IMD (dBc)
VCC = 26 V
ICQ = 250 mA
f1 = 1999.9 MHz
f2 = 2000.0 MHz
Int ermodulation Dist ortion vs. O utput Pow er
Impedance Data
VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA
Z0 = 50 Ω
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PTB 20230
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Typical Scattering Parameters
(VCE = 26 V, IC = 1.75 A)
f S11 S21 S12 S22
(MHz) Mag Ang Mag Ang Mag Ang Mag Ang
100 0.936 -179 1.44 77 0.002 6 0.798 -172
200 0.946 -179 1.06 70 0.002 23 0.828 -174
300 0.963 -180 0.397 34 0.003 71 0.883 -174
400 0.970 179 0.194 19 0.004 85 0.924 -175
500 0.972 179 0.100 11 0.006 89 0.943 -177
600 0.971 178 0.046 12 0.009 88 0.982 -179
700 0.972 178 0.014 55 0.011 84 1.00 177
800 0.975 178 0.026 130 0.012 83 0.952 175
900 0.980 177 0.048 137 0.014 83 0.923 174
1000 0.980 177 0.069 135 0.017 80 0.895 174
1100 0.984 176 0.090 132 0.019 74 0.898 175
1200 0.986 176 0.113 128 0.019 72 0.897 174
1300 0.994 175 0.144 124 0.020 74 0.892 174
1400 1.00 173 0.186 119 0.023 75 0.885 174
1500 0.995 171 0.247 113 0.028 72 0.881 173
1600 0.976 169 0.350 105 0.034 67 0.875 172
1700 0.952 166 0.585 92 0.043 57 0.856 170
1800 0.757 162 1.02 48 0.052 23 0.751 171
1900 0.682 176 1.02 5 0.038 -7 0.756 178
2000 0.825 -171 0.979 -43 0.019 -55 0.848 -178
2100 0.965 -177 0.526 -76 0.004 67 0.897 178
2200 0.994 180 0.355 -87 0.009 94 0.908 177
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
L1
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20230 Uen Rev. A 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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