MOC: Tee) Plastic-Encapsulate Transistors Wi. ... 2SC2236 TRANSISTOR(NPN) ior FEATURES TO-92MOD 1.EMITTER ae fw - 2.COLLECTOR ' 3.BASE Viarycso: 30 V torage function temperature range f= Eee Spe == Q) ces Ty, Tstg: -55C to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Collector-base breakdown voltage VieRICBO ic= 1 mA, fe=0 30 Vv Collector-emitter breakdown voltage ViBR)CEO Ic= 10 mA, f8=0 30 Vv Emitter-base breakdown voltage V(BR)EBO le= 1 mA, Ic=0 5 Vv Collector cut-off current IcBo Veca= 30 V, le=0 0.1 LA Emitter cut-off current leso Ves= 5 V, Ic=0 0.1 RA DC current gain hre Vce= 2 V, Ic= 500 mA 100 320 Collector-emitter saturation voltage VcEsat Ic= 1.5A, Ib= 0.03 A 2 Vv Base-emitter voltage Vee Ic= 500 mA, Vce= 2 V 4 Vv Transition frequency fr Vce= 2 V, c= 500 mA 100 MHz CLASSIFICATION OF hre Rank Oo Y Range 100-200 160-320 Typical Characteristics 2SC2236 Ic - VCE hFE Ic 1 COMMON EMITTER & < Ta=25C 2 z O oS ; & 5 : s 5B 30 COMMON EMITTER 3B 8 Vor =2V S 1 3 10 30 100 300 1000 3000 @ COLLECTOR CURRENT Ic (mA) 3 Ip=imA Ic - VBE 1600 0 2 4 6 8 10 #12 #14 #16 18 q 1400 COLLECTOR-EMITTER VOLTAGE Veg (V) 1200 & VCEsat - Ic E 1000 g g 3 3 COMMON EMITTER # 800 me ss I/Ip=50 z > 1 600 2 5 ze 08 3 400 mS 0.3 2 ES 8 COMMON EMITTER = 200 = VcE=2V BS 01 CE m< 0 FA 0.05 0 02 O04 06 08 10 12 14 16 18 3 0.03 BASE-EMITTER VOLTAGE Vg (V) 8 .01 1 3 10 30 6100 6300 )=61000 3000 SAFE OPERATING AREA ST TTT TT COLLECTOR CURRENT Ic (mA) F ig MAX. (PULSED) ~100ms3 10ms% | Ic MAX. N N \ ims | | Po Ta (CONTINUOUS) NX $ N NN t N NK z 2 . SY 123% rm NAN SAL < Fos XN N o. gq OTT B ce |_| DC OPERATION NX ais B 8) Ta=25C ne wz \ 2 & & 2 5 iN 4 N 2 Soap | 2 8 % SINGLE NONREPETITIVE FC o PULSE Ta=25C _ 3 0.05) CURVES MUST BE DERATED aS 8 LINEARLY WITH INCREASE cog tN TEMPERATURE. VCEO MAX. 0 20 40 60 80 100 120 140 160 0.3 1 3 10 30 AMBIENT TEMPERATURE Ta (C) COLLECTOR-EMITTER VOLTAGE Veg (V)