Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC327 Unit
Collector–Emitter Voltage VCEO –45 Vdc
Collector–Base Voltage VCBO –50 Vdc
Emitter–Base V oltage VEBO –5.0 Vdc
Collector Current – Continuous IC–800 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watt
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 200 °C/W
Thermal Resistance, Junction to Case RJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA, IB = 0) V(BR)CEO –45 – – Vdc
Collector–Emitter Breakdown Voltage
(IC = –100 µA, IE = 0) V(BR)CES –50 – – Vdc
Emitter–Base Breakdown Voltage
(IE = –10 A, IC = 0) V(BR)EBO –5.0 – – Vdc
Collector Cutoff Current
(VCB = –30 V, IE = 0) ICBO – – –100 nAdc
Collector Cutoff Current
(VCE = –45 V, VBE = 0) ICES – – –100 nAdc
Emitter Cutoff Current
(VEB = –4.0 V, IC = 0) IEBO – – –100 nAdc
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 2 1Publication Order Number:
BC327/D
BC327,
BC327-16,
BC327-25,
BC327-40
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
123
COLLECTOR
1
2
BASE
3
EMITTER
BC327, BC327–16, BC327–25, BC327–40
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –100 mA, VCE = –1.0 V) BC327
BC327–16
BC327–25
BC327–40
(IC = –300 mA, VCE = –1.0 V)
hFE 100
100
160
250
40
–
–
–
–
–
630
250
400
630
–
–
Base–Emitter On Voltage
(IC = –300 mA, VCE = –1.0 V) VBE(on) – – –1.2 Vdc
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA) VCE(sat) – – –0.7 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = –10 V, IE = 0, f = 1.0 MHz) Cob –11 – pF
Current–Gain – Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz) fT– 260 – MHz
Figure 1. Thermal Response
t, TIME (SECONDS)
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
θJC(t) = (t) θJC
θJC = 100°C/W MAX
θJA(t) = r(t) θJA
θJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
SINGLE PULSE
BC327, BC327–16, BC327–25, BC327–40
http://onsemi.com
3
-1000
-10
-100-1.0 -3.0 -10 -30
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Active Region – Safe Operating Area
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
-100
1000
10
-1000-0.1 -10 -100
100
-1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms1.0 s TJ = 135°C
100 µs
VCE = -1.0 V
TA = 25°C
TA = 25°C
TC = 25°C
dc
dc
(APPLIES BELOW RATED VCEO)
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT
Figure 7. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.0 -10 -1000-100
-10 -100
TJ = 25°C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -1.0 V
VCE(sat) @ IC/IB = 10
θVC for VCE(sat)
θVB for VBE
Cob
Cib
BC327, BC327–16, BC327–25, BC327–40
http://onsemi.com
4
PACKAGE DIMENSIONS
CASE 29–11
ISSUE AL
TO–92 (TO–226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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