DS12019 Rev. B-2 1 of 2 1N4148 / 1N4448
www.diodes.com ã Diodes Incorporated
Features
1N4148 / 1N4448
FAST SWITCHING DIODE
·Fast Switching Speed
·General Purpose Rectification
·Silicon Epitaxial Planar Construction
Characteristic Symbol 1N4148 1N4448 Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current (Note 1) IFM 300 500 mA
Average Rectified Output Current (Note 1) IO150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0msIFSM 1.0
2.0 A
Power Dissipation (Note 1)
Derate Above 25°CPd500
1.68
mW
mW/°C
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 300 K/W
Operating and Storage Temperature Range Tj,T
STG -65 to +175 °C
Maximum Ratings @ TA= 25°C unless otherwise specified
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage 1N4148
1N4448
1N4448
VFM
¾
0.62
¾
1.0
0.72
1.0
V
IF = 10mA
IF = 5.0mA
IF = 100mA
Maximum Peak Reverse Current IRM ¾
5.0
50
30
25
mA
mA
mA
nA
VR = 75V
VR = 70V, Tj = 150°C
VR = 20V, Tj = 150°C
VR = 20V
Capacitance Cj¾4.0 pF VR = 0, f = 1.0MHz
Reverse Recovery Time trr ¾4.0 ns IF = 10mA to IR =1.0mA
VR= 6.0V, RL = 100W
Electrical Characteristics @ TA= 25°C unless otherwise specified
Features
·Case: DO-35
·Leads: Solderable per MIL-STD-202,
Method 208
·Polarity: Cathode Band
·Marking: Type Number
·Weight: 0.13 grams (approx.)
Mechanical Data
A A
B
C
D
DO-35
Dim Min Max
A25.40 ¾
B¾4.00
C¾0.60
D¾2.00
All Dimensions in mm
SPICE MODEL: 1N4148
DS12019 Rev. B-2 2 of 2 1N4148 / 1N4448
www.diodes.com
1
10
100
1000
10,000
0 100 200
I , LEAKAGE CURRENT (nA)
R
T , JUNCTION TEMPERATURE (°C)
j
Fig. 2, Leakage Current vs Junction Temperature
V = 20V
R
10
1.0
100
1000
0.1
0.01
01
2
I , INSTANTANE
O
US F
O
RWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 1 Forward Characteristics
