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Dear Customer,
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semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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1. Product profile
1.1 General description
PNP medium power transistor series in Surfa ce-Mounte d Device (SMD) plastic p ackages.
[1] Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plas tic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
1.4 Quick reference data
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
Rev. 7 — 12 October 2011 Product data sheet
Table 1. Product overview
Type number[1] Package NPN complement
NXP JEITA JEDEC
BCP69 SOT223 SC-73 - BCP68
BC869 SOT89 SC-62 TO-243 BC868
BC69PA SOT1061 - - BC68PA
Linear voltage regulators Power management
High-side switches MOSFET drivers
Battery-driven devices Amplifiers
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 20 V
ICcollector current - - 2A
ICM peak collector current single pulse; tp1ms - - 3A
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 2 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
[1] Pulse test: tp300 s; = 0.02.
2. Pinning information
hFE DC current gain VCE =1V;
IC=500 mA [1] 85 - 375
hFE selection -16 VCE =1V;
IC=500 mA [1] 100 - 250
hFE selection -25 VCE =1V;
IC=500 mA [1] 160 - 375
Table 2. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT223
1base
2 collector
3emitter
4 collector
SOT89
1emitter
2 collector
3base
SOT1061
1base
2emitter
3 collector
132
4
sym028
2, 4
3
1
321
006aaa231
2
1
3
Transparent top view
12
3
sym013
3
2
1
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 3 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
3. Ordering information
[1] Valid for all available selection groups.
4. Marking
Tabl e 4. Ordering information
Type number[1] Package
Name Description Version
BCP69 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads SOT223
BC869 SC-62 plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads SOT89
BC69PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 20.65 mm SOT1061
Table 5. Marking codes
Type number Marking code
BCP69 BCP69
BCP69-16 BCP69/16
BCP69-25 BCP69/25
BC869 CEC
BC869-16 CGC
BC869-25 CHC
BC69PA B3
BC69-16PA BM
BC69-25PA BN
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 4 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 32 V
VCEO collector-emitter voltage open base - 20 V
VEBO emitter-base voltage open collector - 5V
ICcollector current - 2A
ICM peak collector current single pulse;
tp1ms -3A
IBbase current - 0.4 A
IBM peak base current single pulse;
tp1ms -0.4 A
Ptot total power dissipation Tamb 25 C
BCP69 [1] -0.65W
[2] -1.00W
[3] -1.35W
BC869 [1] -0.50W
[2] -0.95W
[3] -1.35W
BC69PA [1] -0.42W
[2] -0.83W
[3] -1.10W
[4] -0.81W
[5] -1.65W
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 5 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves SOT223 Fig 2. Power derating curves SOT89
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 3. Power derating curves S OT 10 6 1
Tamb (°C)
–75 17512525 75–25
006aac674
0.5
1.0
1.5
Ptot
(W)
0.0
(1)
(2)
(3)
Tamb (°C)
–75 17512525 75–25
006aac675
0.5
1.0
1.5
Ptot
(W)
0.0
(1)
(2)
(3)
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 6 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air
BCP69 [1] --192K/W
[2] --125K/W
[3] --93K/W
BC869 [1] --250K/W
[2] --132K/W
[3] --93K/W
BC69PA [1] --298K/W
[2] --151K/W
[3] --114K/W
[4] --154K/W
[5] --76K/W
Rth(j-sp) thermal resistance from
junction to solder poi nt
BCP69 - - 16 K/W
BC869 - - 16 K/W
BC69PA - - 20 K/W
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 7 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junc tio n to ambient as a function of pulse duration for SO T223;
typical values
FR4 PCB, mounting pad for collector 1 cm2
Fig 5. Transient thermal impedance from junc tio n to ambient as a function of pulse duration for SO T223;
typical values
006aac677
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac678
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 8 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, mounting pad for collector 6 cm2
Fig 6. Transient thermal impedance from junc tio n to ambient as a function of pulse duration for SO T223;
typical values
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac679
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac680
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 9 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, mounting pad for collector 1 cm2
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
FR4 PCB, mounting pad for collector 6 cm2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac681
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac682
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1
0.2 0.33
0.5 0.75
0.02
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 10 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, single-sided copper, standard footprint
Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac683
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
006aac684
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 11 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
FR4 PCB, 4-layer copper, standard footprint
Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac685
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
006aac686
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 12 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac687
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 13 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
7. Characteristics
[1] Pulse test: tp300 s; = 0.02.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =25 V; IE=0A - - 100 nA
VCB =25 V; IE=0A;
Tj= 150 C--10 A
IEBO emitter-base cut-of f
current VEB =5V; I
C=0A - - 100 nA
hFE DC current gain VCE =10 V
IC=5mA 50 - -
DC current ga in VCE =1V
IC=500 mA [1] 85 - 375
IC=1A [1] 60 - -
IC=2A [1] 40 - -
DC current ga in VCE =1V
hFE selection -16 IC=500 mA [1] 100 - 250
hFE selection -25 IC=500 mA [1] 160 - 375
VCEsat collector-emitter
saturation voltage IC=1A; I
B=100 mA [1] --0.5 V
IC=2A; I
B=200 mA [1] 0.6 V
VBE base-emitter vo ltage VCE =10 V; IC=5mA [1] --0.7 V
VCE =1V; I
C=1A [1] --1V
Cccollector capacitance VCB =10 V; IE=i
e=0A;
f=1MHz -28-pF
fTtransition frequency VCE =5V; I
C=50 mA;
f=100MHz 40 140 - MHz
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 14 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
VCE =1V
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Tamb =25C
Fig 15. hFE selection -16: DC current gain as a
function of collector current; typical values Fig 16. hFE selection -16: collector current as a
function of collector-emitter voltage; typical
values
VCE =1V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 100 C
IC/IB=10
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Fig 17. hFE selecti on -16: bas e-emitter voltage as a
function of collector current; typical values Fig 18. hFE selection -16: collector-emitter saturation
voltage as a function of collect or cur r e nt;
typical values
006aac697
100
200
300
hFE
0
IC (A)
-10-4 -10-1-10-3 -10-1
-10-2
(1)
(2)
(3)
006aab403
0
I
C
(A)
V
CE
(V)
2.4
1.6
2.0
0.8
1.2
0.4
0
15
234
I
B
(mA) = 18.0
16.2
3.6
5.4
7.2
9.0
14.4
12.6
10.8
1.8
006aac698
-0.4
-0.8
-1.2
VBE
(V)
0.0
IC (mA)
-10-1 -104
-103
-1 -102
-10
(1)
(2)
(3)
006aac699
-10-1
-10-2
-1
VCEsat
(V)
-10-3
IC (mA)
-10-1 -104
-103
-1 -102
-10
(1)
(2)
(3)